Orientation-Aligned Si Nano-wires Formed by Multiple-Channeling Ion-Implantation
| Project/Area Number |
21360157
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electron device/Electronic equipment
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| Research Institution | Tokyo Institute of Technology |
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Principal Investigator |
ITO Takashi 東京工業大学, ソリューション研究機構, 特任教授 (20374952)
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| Co-Investigator(Kenkyū-buntansha) |
KUROKI Shin-ichiro 東北大学, 大学院・工学研究科, 助教 (70400281)
NAKAJIMA Anri 広島大学, ナノデバイス・バイオ融合科学研究所, 准教授 (70304459)
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| Project Period (FY) |
2009 – 2011
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| Project Status |
Completed (Fiscal Year 2011)
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| Budget Amount *help |
¥16,770,000 (Direct Cost: ¥12,900,000、Indirect Cost: ¥3,870,000)
Fiscal Year 2011: ¥4,030,000 (Direct Cost: ¥3,100,000、Indirect Cost: ¥930,000)
Fiscal Year 2010: ¥5,590,000 (Direct Cost: ¥4,300,000、Indirect Cost: ¥1,290,000)
Fiscal Year 2009: ¥7,150,000 (Direct Cost: ¥5,500,000、Indirect Cost: ¥1,650,000)
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| Keywords | Siナノワイヤー / 結晶配向制御 / イオン注入 / チャネリング / 多結晶シリコン / ナノワイヤー / 結晶配向 / チャネリング注入 / TFT |
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| Research Abstract |
Highly orientation-aligned poly-Si nano-wires were formed by double-line-beam CW laser crystallization. The predominant orientations of the nano-wires were further enhanced by multiple Si^+ ion-implantations with channeling effect and annealing, resulting in semi-single crystal Si nano-wires.
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Report
(4 results)
Research Products
(43 results)
