Orientation-Aligned Si Nano-wires Formed by Multiple-Channeling Ion-Implantation

• Project/Area Number: 21360157
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Electron device/Electronic equipment
• Research Institution: Tokyo Institute of Technology
• Principal Investigator: ITO Takashi 東京工業大学, ソリューション研究機構, 特任教授 (20374952)
• Co-Investigator(Kenkyū-buntansha): KUROKI Shin-ichiro 東北大学, 大学院・工学研究科, 助教 (70400281) ; NAKAJIMA Anri 広島大学, ナノデバイス・バイオ融合科学研究所, 准教授 (70304459)
• Project Period (FY): 2009 – 2011
• Project Status: Completed (Fiscal Year 2011)
• Budget Amount: ¥16,770,000 (Direct Cost: ¥12,900,000、Indirect Cost: ¥3,870,000); Fiscal Year 2011: ¥4,030,000 (Direct Cost: ¥3,100,000、Indirect Cost: ¥930,000); Fiscal Year 2010: ¥5,590,000 (Direct Cost: ¥4,300,000、Indirect Cost: ¥1,290,000); Fiscal Year 2009: ¥7,150,000 (Direct Cost: ¥5,500,000、Indirect Cost: ¥1,650,000)
• Keywords: Siナノワイヤー / 結晶配向制御 / イオン注入 / チャネリング / 多結晶シリコン / ナノワイヤー / 結晶配向 / チャネリング注入 / TFT

Research Abstract

Highly orientation-aligned poly-Si nano-wires were formed by double-line-beam CW laser crystallization. The predominant orientations of the nano-wires were further enhanced by multiple Si^+ ion-implantations with channeling effect and annealing, resulting in semi-single crystal Si nano-wires.

Research Products

• [Journal Article] In-Plane Grain Orientation Alignment of Polycrystalline Si Films by Normal and Oblique-Angle Ion-Implantations (2012)
  • Author(s): Anri Nakajima, Shin-Ichiro Kuroki, Shuntaro Fujii, and Takashi Ito
  • Journal Title: Jpn. J. Appl. Phys. Volume: 51
• [Journal Article] Carrier transport and its variation of laser-lateral crystallized poly-Si TFTs (2011)
  • Author(s): S.-I. Kuroki, S. Fujii, K. Kotani, andT. Ito
  • Journal Title: Elec. Lett. Volume: 47, 24
• [Journal Article] Seed-Free Fabrication of Highly Bi-Axially Oriented Poly-Si Thin Films by Continuous-Wave Laser Crystallization with Double-Line Beams (2011)
  • Author(s): Shin-Ichiro Kuroki, Yuya Kawasaki, Shuntaro Fujii, Koji Kotani, and Takashi Ito
  • Journal Title: J. Electrochem. Soc. Volume: 158, 9
• [Journal Article] Functional gate metal-oxide semiconductor field-effect transistors using tunnel injection/ejection of trap charges enabling self-adjustable threshold voltage for ultralow power operation (2011)
  • Author(s): Anri Nakajima, Takashi Kudo, TakashiIto
  • Journal Title: Appl. Phys. Lett. Volume: Vol.98
  • NAID: 120006582092
• [Journal Article] Strain-Induced Back Channel Electron Mobility Enhancement in Polycrystalline Silicon Thin-Film Transistors Fabricated by Continuous-Wave Laser Lateral Crystallization (2011)
  • Author(s): Shuntaro Fujii, Shin-Ichiro Kuroki, Koji Kotani, Takashi Ito
  • Journal Title: Jpn. J. Appl. Phy. Volume: Vol.50
  • NAID: 210000070347
• [Journal Article] Strain-Induced Back Channel Electron Mobility Enhancement in Polycrystalline Silicon Thin Film Transistors Fabricated by Continuous-Wave Lateral Crystallization (2011)
  • Author(s): S.Fujii
  • Journal Title: Jpn.J.Appl.Phys. Volume: 50 Issue: 4S Pages: 04DH10-04DH10
  • DOI: 10.1143/jjap.50.04dh10
  • Peer Reviewed
• [Journal Article] Functional gate metal-oxide-semiconductor field-effect transistors using tunnel injection/ejection of trap charges enabling self-adjustable threshold voltage for ultra low power operation (2011)
  • Author(s): A.Nakajima
  • Journal Title: Appl.Phys.Lett. Volume: 98 Issue: 5
  • DOI: 10.1063/1.3549178
  • NAID: 120006582092
  • Peer Reviewed
• [Journal Article] Seed-Free Fabrication of Highly Bi-Axially Oriented Poly-Si Thin Films by Continuous-Wave Laser Crystallization with Double-Line Beams (2011)
  • Author(s): S.Kuroki
  • Journal Title: J.Electrochem.Soc. Volume: 158 Issue: 9 Pages: H924-H924
  • DOI: 10.1149/1.3610410
  • Peer Reviewed
• [Journal Article] Carrier transport and its variation of laser-lateral-crystallized poly-Si TFTs (2011)
  • Author(s): S.Kuroki
  • Journal Title: Electronics Letters Volume: 47 Issue: 24 Pages: 1336-1338
  • DOI: 10.1049/el.2011.2854
  • Peer Reviewed
• [Journal Article] Roughness Reduction in Polycrystalline Silicon Thin Films Formed by Continuous-Wave Laser Lateral Crystallization with Cap SiO2 Thin Films (2010)
  • Author(s): Shuntaro Fujii, Shin-Ichiro Kuroki, Masayuki Numata, Koji Kotani, Takashi Ito
  • Journal Title: Jpn. J. Appl. Phys. Volume: Vol.48
  • NAID: 210000066640
• [Journal Article] Highly Reliable and Drivability-Enhanced MOS Transistors with Rounded Nanograting Channels (2010)
  • Author(s): Takashi ITO, Xiaoli ZHU, Shin-Ichiro KUROKI, Koji KOTANI
  • Journal Title: IEICE TRANCE. ELECTRON. Volume: Vol.E93-C, No.11 Pages: 1638-1644
  • NAID: 10027983872
• [Journal Article] Enhancement of Current Drivability of Nanograting Polycrystalline Silicon Thin-Film Transistors (2010)
  • Author(s): Shin-Ichiro Kuroki, Xiaoli Zhu, Koji Kotani, and Takashi Ito
  • Journal Title: Jpn. J. Appl. Phys. Volume: Vol.49
  • NAID: 210000068329
• [Journal Article] Enhancement of Current Drivability of Nanograting Polycrystalline Silicon Thin-Film Transistors (2010)
  • Author(s): S.Kuroki
  • Journal Title: Jpn.J.Appl.Phys Volume: 49
  • NAID: 210000068329
  • Peer Reviewed
• [Journal Article] Highly Reliable and Drivability-Enhanced MOS Transistors with Rounded Nanograting Channels (2010)
  • Author(s): T.Ito
  • Journal Title: IEICE TRANS. ELECTRON. Volume: E93-C Pages: 1638-1644
  • NAID: 10027983872
  • Peer Reviewed
• [Journal Article] Roughness Reduction in Polycrystalline Silicon Thin Films Formed by Continuous-Wave Laser Lateral Crystallization with Cap SiO2 Thin Films (2009)
  • Author(s): Vol.48Sunichiro Fujii, Shin-Ichiro Kuroki, Masaki Numata, Koji Kotani, and Takashi Ito
  • Journal Title: Jpn. J. Appl. Phys. Volume: Vol.48
  • NAID: 210000066640
• [Journal Article] Roughness Reduction in Polycrystalline Silicon Thin Films Formed by Continuous-Wave Laser Lateral Crystallization with Cap SiO_2 Thin Films (2009)
  • Author(s): S.Fujii
  • Journal Title: Jpn.J.Appl.Phys. 48
  • Peer Reviewed
• [Presentation] レーザラテラル結晶化Poly-Si TFTにおける膜中歪みの効果 (2011)
  • Author(s): 黒木伸一郎,川崎雄也,藤井俊太朗,小谷光司,伊藤隆司
  • Organizer: 第8回薄膜材料デバイス研究会資料
  • Place of Presentation: 京都
  • Year and Date: 2011-11-04
• [Presentation] Alignment of In-Plane Crystallographic Grain Orientations in Polycryst alline Si Films by Normal and Oblique-Angle Ion Implantations (2011)
  • Author(s): A.Nakajima
  • Organizer: 2011 International Conference on Solid State Devices and Materials
  • Place of Presentation: 愛知県産業労働センター
  • Year and Date: 2011-09-29
• [Presentation] Alignment of In-plane Crystallographic Grain Orientations in Polycrystalline Si Films by Normal and Oblique-Angle Ion-Implantations (2011)
  • Author(s): Anri Nakajima, Shin-Ichiro Kuroki, Shuntaro Fujii, and Takashi Ito
  • Organizer: 2011 International Conference on Solid State Devices and Materials
  • Place of Presentation: 名古屋
  • Year and Date: 2011-09-28
• [Presentation] Crystal Growth of Highly Biaxially-Oriented Poly-Si Thin Films by W-Line Beam Continuous Wave Laser Lateral Crystallization (2011)
  • Author(s): Shin-Ichiro Kuroki
  • Organizer: The 18th International Workshop on Active Matrix Flat Panel Displays and Devices(招待講演)
  • Place of Presentation: 横浜
  • Year and Date: 2011-07-13
• [Presentation] Crystal Growth of Highly Biaxially-Oriented Poly-Si Thin Films by W-Line Beam Continuous-Wave Laser Lateral Crystallization (2011)
  • Author(s): S.Kuroki
  • Organizer: The 18th International Workshop on Active Matrix Flat Panel Displays and Devices
  • Place of Presentation: 東京工業大学ディジタル多目的ホール(招待講演)
  • Year and Date: 2011-07-13
• [Presentation] Highly Bi-axially Orientation Controlled Si Films on Glass Substrates By Double-Line Beam CW Laser Annealing (2011)
  • Author(s): T.Ito
  • Organizer: EUROSOI 2011
  • Place of Presentation: Granada, Spain
  • Year and Date: 2011-01-29
• [Presentation] Bi-Axially Orientation-Controlled Si Thin Films on Glass Substrates by Double-Line Beam CW Laser Annealing (2011)
  • Author(s): Shin-Ichiro Kuroki, Yuya Kawasaki, Shuntaro Fujii, Koji Kotani, and Takashi Ito
  • Organizer: VIth Workshop of the Thematic Network on Silicon On Insulator Technology, Devices and Materials
  • Place of Presentation: Spain
  • Year and Date: 2011-01-20
• [Presentation] ダブルラインビームCLCによる3軸配向性の高いPoly Si薄膜形成 (2010)
  • Author(s): 黒木伸一郎,川崎雄也,藤井俊太朗,小谷光司,伊藤隆司
  • Organizer: 第7回薄膜材料デバイス研究会
  • Place of Presentation: 奈良
  • Year and Date: 2010-11-06
• [Presentation] ダブルラインビームCLCによる3軸配向性の高いPoly-Si薄膜形成 (2010)
  • Author(s): 黒木伸一郎
  • Organizer: 第7回薄膜材料デバイス研究会
  • Place of Presentation: 奈良
  • Year and Date: 2010-11-06
• [Presentation] 高性能LTPS-TFTのためのDouble-Line-Beam CLCによる高結晶配向Poly-Si薄膜形成 (2010)
  • Author(s): 黒木伸一郎,川崎雄也,藤井俊太朗,小谷光司,伊藤隆司
  • Organizer: 電子情報通信学会シリコン材料・デバイス研究会
  • Place of Presentation: 仙台
  • Year and Date: 2010-10-22
• [Presentation] 高性能LTPS-TFT のためのDouble-Line-Beam CLC による高結晶配向Poly-Si 薄膜形成 (2010)
  • Author(s): 黒木伸一郎
  • Organizer: 電子情報通信学会SDM研究会
  • Place of Presentation: 仙台
  • Year and Date: 2010-10-22
• [Presentation] Strain-Induced Back Channel Electron Mobility Enhancement in Poly-Si TFTs Formed by Continuous-Wave Laser Lateral Crystallization (2010)
  • Author(s): Suntaro Fujii, Shin-Ichiro Kuroki, Koji Kotani, and Takashi Ito
  • Organizer: 2010 International Conference on Solid State Devices and Materials
  • Place of Presentation: 東京
  • Year and Date: 2010-09-30
• [Presentation] 石英基板上に作製したVTH可変ラテラル結晶化poly-Si TFT (2010)
  • Author(s): 藤井俊太朗
  • Organizer: 第57回応用物理学関係連合講演会
  • Place of Presentation: 東海大学,平塚市
  • Year and Date: 2010-03-18
• [Presentation] 石英基板上に作製したVth可変ラテラル結晶化poly-Si TFT (2010)
  • Author(s): 藤井俊太朗,黒木伸一郎,小谷光司,伊藤隆司
  • Organizer: 第57回応用物理学関係連合講演会講演会
  • Place of Presentation: 平塚
  • Year and Date: 2010-03-17
• [Presentation] One-dimensionally Long Silicon Grain Formation by Continuous-Wave Green Laser and Its Applications (2010)
  • Author(s): S.Kuroki
  • Organizer: International Thin-Film Transistor Conference 2010
  • Place of Presentation: イーグレ姫路、姫路市
  • Year and Date: 2010-01-28
• [Presentation] Enlargement of Crystal-Grains in Thin Silicon Films Using Continuous Wave Laser Irradiation (2010)
  • Author(s): Suntaro Fujii, Shin-Ichiro Kuroki, Koji Kotani, and Takashi Ito
  • Organizer: 2010 International Conference on Solid State Devices and Materials
  • Place of Presentation: 東京
• [Presentation] ヒートガスアニールによるガラス基板上の非晶質シリコン薄膜の結晶化 (2009)
  • Author(s): 田主裕一朗
  • Organizer: 電子情報通信学会SDM研究会
  • Place of Presentation: 東北大学、仙台市
  • Year and Date: 2009-10-30
• [Presentation] SOI基板を用いたSi-MESFETの電流電圧特性 (2009)
  • Author(s): 阿部俊幸
  • Organizer: 電子情報通信学会SDM研究会
  • Place of Presentation: 東北大学、仙台市
  • Year and Date: 2009-10-29
• [Presentation] Ion-Implanted Boron Activation in a Preamorphized Si Layer by Microwave Annealing (2009)
  • Author(s): K.Hara
  • Organizer: The 2009 International Conference on Solid State Devices and Materials
  • Place of Presentation: 仙台国際ホテル、仙台市
  • Year and Date: 2009-10-08
• [Presentation] The Drivability Enhancement of Poly-Si TFTs by use of Nanograting Substrate (2009)
  • Author(s): S.Kuroki
  • Organizer: The 2009 International Conference on Solid State Devices and Materials
  • Place of Presentation: 仙台国際ホテル、仙台市
  • Year and Date: 2009-10-08
• [Presentation] The Drivability Enhancement of Poly-Si TFTs by use of Nanograting Substrate (2009)
  • Author(s): Shin-Ichiro Kuroki, Xiaoli Zhu, Koji Kotani, and Takashi Ito
  • Organizer: 2009 International Conference on Solid State Devices and Materials
  • Place of Presentation: 仙台
  • Year and Date: 2009-10-07
• [Remarks]
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• [Patent(Industrial Property Rights)] 電界効果型半導体装置 (2009)
  • Inventor(s): 伊藤隆司
  • Industrial Property Rights Holder: 東北大学
  • Industrial Property Number: 2009-246788
  • Filing Date: 2009-10-27
• [Patent(Industrial Property Rights)] 結晶性半導体薄膜の製造方法 (2009)
  • Inventor(s): 伊藤隆司
  • Industrial Property Rights Holder: 東北大学
  • Industrial Property Number: 2009-231139
  • Filing Date: 2009-10-05