Simulation Study of Long-Range Coulomb Interaction in Nano-Scale Devices
Project/Area Number |
21360160
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Research Category |
Grant-in-Aid for Scientific Research (B)
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Allocation Type | Single-year Grants |
Section | 一般 |
Research Field |
Electron device/Electronic equipment
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Research Institution | University of Tsukuba |
Principal Investigator |
SANO Nobuyuki 筑波大学, 数理物質系, 教授 (90282334)
|
Project Period (FY) |
2009 – 2011
|
Project Status |
Completed (Fiscal Year 2011)
|
Budget Amount *help |
¥17,550,000 (Direct Cost: ¥13,500,000、Indirect Cost: ¥4,050,000)
Fiscal Year 2011: ¥2,080,000 (Direct Cost: ¥1,600,000、Indirect Cost: ¥480,000)
Fiscal Year 2010: ¥7,280,000 (Direct Cost: ¥5,600,000、Indirect Cost: ¥1,680,000)
Fiscal Year 2009: ¥8,190,000 (Direct Cost: ¥6,300,000、Indirect Cost: ¥1,890,000)
|
Keywords | 電子デバイス / 集積回路 / 半導体デバイス / デバイス・シミュレーション / ボルツマン輸送方程式 / モンテカルロ法 / クーロン相互作用 / 電子輸送 / 計算物理 / 半導体物性 |
Research Abstract |
We investigate the effect of the Coulomb interaction on device characteristics and its physical mechanism under the double-gate MOSFET structures by Monte Carlo simulations which take into account of the Coulomb interaction accurately. Potential fluctuations associated with the long-range part of the Coulomb interaction among electrons are also studied by looking at the local density of states in high-doped regions. We find that there are strong electron flows even inside the high-doped source regions near the channel junctions so that electrons there are in highly off-equilibrium. We also find that device characteristics strongly degrade if the channel length shrinks below 10 nm due to plasmon excitations by channel electrons through the Coulomb interaction.
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Report
(4 results)
Research Products
(34 results)
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[Journal Article] Hole Mobility Enhancement Caused by Gate-Induced Vertical Strain in Gate-First Full-Metal High-k pFETs using Ion-Beam W2009
Author(s)
F. Ootsuka, A. Katakami, K. Shirai, H. Nakata, T. Eimori, Y. Nara, Y. Ohji, K.Shimura, S. Horii, N. Sano, K. Yamabe
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Journal Title
Jpn. J. Appl. Phys
Volume: 48
Issue: 5R
Pages: 056502-056502
DOI
Related Report
Peer Reviewed
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[Journal Article] Analysis of Photon-Induced Drain Current in Polycrystalline-Silicon Thin-Film Transistors2009
Author(s)
F.Ootsuka, A.Katakami, K.Shirai, H.i Nakata, T.Eimori, Y.Nara, Y.Ohji, K.Shimura, S.Horii, N.Sano, K.Yamabe
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Journal Title
NAID
Related Report
Peer Reviewed
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[Presentation] Scaling FETs to 10 nm : Coulomb Effects, Source Starvation, and Virtual Source2010
Author(s)
(INVITED) M. V. Fischetti, S. Jin, T.-w. Tang, P. Asbeck, Y. Taur, S. E. Laux, N. Sano, and M. Rodwell
Organizer
217th ECS Meeting
Place of Presentation
Vancouver, Canada
Related Report
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