Simulation Study of Long-Range Coulomb Interaction in Nano-Scale Devices

• Project/Area Number: 21360160
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Electron device/Electronic equipment
• Research Institution: University of Tsukuba
• Principal Investigator: SANO Nobuyuki 筑波大学, 数理物質系, 教授 (90282334)
• Project Period (FY): 2009 – 2011
• Project Status: Completed (Fiscal Year 2011)
• Budget Amount: ¥17,550,000 (Direct Cost: ¥13,500,000、Indirect Cost: ¥4,050,000); Fiscal Year 2011: ¥2,080,000 (Direct Cost: ¥1,600,000、Indirect Cost: ¥480,000); Fiscal Year 2010: ¥7,280,000 (Direct Cost: ¥5,600,000、Indirect Cost: ¥1,680,000); Fiscal Year 2009: ¥8,190,000 (Direct Cost: ¥6,300,000、Indirect Cost: ¥1,890,000)
• Keywords: 電子デバイス / 集積回路 / 半導体デバイス / デバイス・シミュレーション / ボルツマン輸送方程式 / モンテカルロ法 / クーロン相互作用 / 電子輸送 / 計算物理 / 半導体物性

Research Abstract

We investigate the effect of the Coulomb interaction on device characteristics and its physical mechanism under the double-gate MOSFET structures by Monte Carlo simulations which take into account of the Coulomb interaction accurately. Potential fluctuations associated with the long-range part of the Coulomb interaction among electrons are also studied by looking at the local density of states in high-doped regions. We find that there are strong electron flows even inside the high-doped source regions near the channel junctions so that electrons there are in highly off-equilibrium. We also find that device characteristics strongly degrade if the channel length shrinks below 10 nm due to plasmon excitations by channel electrons through the Coulomb interaction.

Research Products

• [Journal Article] One-Flux Theory of Saturated Drain Current in Nanoscale Transistors (2012)
  • Author(s): T-w.Tang, M.V.Fischetti, S.Jin, N.Sano
  • Journal Title: Solid State Electron Volume: (In press)
  • Peer Reviewed
• [Journal Article] Impact of the Coulomb Interaction on Nano-Scale Silicon Device Characteristics (2011)
  • Author(s): N. Sano
  • Journal Title: J. Comp. Electron Volume: 10 Issue: 1-2 Pages: 98-103
  • DOI: 10.1007/s10825-010-0327-6
  • NAID: 120007130717
  • Peer Reviewed
• [Journal Article] Quasi-Ballistic Transport in Nano-Scale Devices : Boundary Layer, Potential Fluctuation, and Coulomb Interaction (2011)
  • Author(s): N.Sano, T.Karasawa
  • Journal Title: Key Engineering Materials Volume: 470 Pages: 207-213
  • DOI: 10.4028/www.scientific.net/kem.470.207
  • Peer Reviewed
• [Journal Article] Impact of the Coulomb Interaction on Nano-Scale Silicon Device Characteristics (2011)
  • Author(s): Nobuyuki Sano
  • Journal Title: J.Comp.Electron. Volume: 98 Pages: 98-103
  • NAID: 120007130717
  • Peer Reviewed
• [Journal Article] Monte Carlo Study of the Coulomb Interaction in Nano-Scale Silicon Devices (2011)
  • Author(s): Nobuyuki Sano
  • Journal Title: Jpn.J.Appl.Phys. Volume: 50
  • Peer Reviewed
• [Journal Article] Monte Carlo Study of the Coulomb Interaction in Nano-Scale Silicon Devices (2010)
  • Author(s): N. Sano
  • Journal Title: Jpn. J. Appl. Phys Volume: 50 Issue: 1R Pages: 010108-010108
  • DOI: 10.1143/jjap.50.010108
  • Peer Reviewed
• [Journal Article] Self-Consistent Simulation of Intermediate Band Solar Cell : Effect of Occupation Rate on Device Characteristics (2010)
  • Author(s): K. Yoshida, Y. Okada and N. Sano
  • Journal Title: Appl. Phys. Lett Volume: 97 Issue: 13
  • DOI: 10.1063/1.3488815
  • NAID: 120007137892
  • Peer Reviewed
• [Journal Article] Pinch-off Voltage Lowering in Polycrystalline-Silicon Thin-Film Transistors (2010)
  • Author(s): H. Ikeda and N. Sano
  • Journal Title: Jpn. J. Appl. Phys Volume: 50 Issue: 1R Pages: 014301-014301
  • DOI: 10.1143/jjap.50.014301
  • NAID: 40017446836
  • Peer Reviewed
• [Journal Article] Self-Consistent Simulation of Intermediate Band Solar Ce-Effect of Occupation Rate on Device Characteristics (2010)
  • Author(s): Katsuhisa Yoshida, Yoshitaka Okada, Nobuyuki Sano
  • Journal Title: Appl.Phys.Lett. Volume: 97
  • Peer Reviewed
• [Journal Article] Scaling FETs to 10 nm : Coulomb Effects, Source Starvation, and Virtual Source (2009)
  • Author(s): M. V. Fischetti, S. Jin, T.-w. Tang, P. Asbeck, Y. Taur, S. E. Laux, and N. Sano
  • Journal Title: J. Comp. Electron Volume: 2 Issue: 2 Pages: 60-77
  • DOI: 10.1007/s10825-009-0277-z
  • Peer Reviewed
• [Journal Article] Analysis of Photon-Induced Drain Current in Polycrystalline-Silicon Thin-Film Transistors (2009)
  • Author(s): H. Ikeda and N. Sano
  • Journal Title: Jpn. J. Appl. Phys Volume: 48 Issue: 10 Pages: 101201-101201
  • DOI: 10.1143/jjap.48.101201
  • NAID: 40016796029
  • Peer Reviewed
• [Journal Article] Hole Mobility Enhancement Caused by Gate-Induced Vertical Strain in Gate-First Full-Metal High-k pFETs using Ion-Beam W (2009)
  • Author(s): F. Ootsuka, A. Katakami, K. Shirai, H. Nakata, T. Eimori, Y. Nara, Y. Ohji, K.Shimura, S. Horii, N. Sano, K. Yamabe
  • Journal Title: Jpn. J. Appl. Phys Volume: 48 Issue: 5R Pages: 056502-056502
  • DOI: 10.1143/jjap.48.056502
  • Peer Reviewed
• [Journal Article] 最先端デバイスのモンテカルロ法 (2009)
  • Author(s): 佐野伸行
  • Journal Title: 電気学会誌 Volume: 12月号 Pages: 796-799
  • NAID: 10026224039
  • Peer Reviewed
• [Journal Article] Analysis of Photon-Induced Drain Current in Polycrystalline-Silicon Thin-Film Transistors (2009)
  • Author(s): F.Ootsuka, A.Katakami, K.Shirai, H.i Nakata, T.Eimori, Y.Nara, Y.Ohji, K.Shimura, S.Horii, N.Sano, K.Yamabe
  • Journal Title: Jpn.J.Appl.Phys. 48
  • NAID: 40016796029
  • Peer Reviewed
• [Journal Article] Analysis of Photon-Induced Drain Current in Polycrystalline-Silicon Thin-Film Transistors (2009)
  • Author(s): H.Ikeda, N.Sano
  • Journal Title: Jpn.J.Appl.Phys. 48
  • NAID: 40016796029
  • Peer Reviewed
• [Journal Article] Scaling FETs to 10nm : Coulomb Effects, Source Starvation, and Virtua 1 Source (2009)
  • Author(s): M.V.Fischetti, S.Jin, T.-w.Tang, P.Asbeck, Y.Taur, S.E.Laux, N.Sano
  • Journal Title: J.Comp.Electron. 2 Pages: 60-77
  • Peer Reviewed
• [Presentation] The Role of High-Doped Source and Drain on Device Performance in Nano-Scale Si-MOSFETs (2011)
  • Author(s): (INVITED) N. Sano
  • Organizer: 2011 International Meeting for Future of Electron Devices, Kansai (IMFEDK)
  • Place of Presentation: Kansai Univ
• [Presentation] Self-Consistent Monte Carlo Study of the Coulomb Interaction under Nano-Scale Device Structures (2011)
  • Author(s): N. Sano
  • Organizer: The American Physica Society March Meeting
  • Place of Presentation: Dallas, U.S.A
• [Presentation] The Role of High-Doped Source and Drain on Device Performance in Nano-Scale Si-MOSFETs (2011)
  • Author(s): Nobuyuki Sano
  • Organizer: 2011 International Meeting for Future of Electron Devices, Kansai (IMFEDK)
  • Place of Presentation: Kansai Univ.(Osaka)(INVITED)
• [Presentation] Model-Comparison Study of Quasi-Ballistic Electron Transport in Nanoscale Semiconductor Devices (2010)
  • Author(s): T-w. Tang, I. Yoon, N. Sano, S. Jin, M. Fischetti, and Y. J. Park
  • Organizer: International Workshop on Computational Electronics (IWCE-14)
  • Place of Presentation: Pisa, Italy
• [Presentation] Quasi-Ballistic Transport in Nano-Scale Devices : Boundary Layer, Potential Fluctuation, and Coulomb Interaction (2010)
  • Author(s): (INVITED) N. Sano
  • Organizer: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD-2010)
  • Place of Presentation: Bologna, Italy
• [Presentation] Self-Consistent Drift-Diffusion Approach for Analysis of Intermediate Band Solar Cells with Multi-Stacked Quantum Dots (2010)
  • Author(s): K. Yoshida, Y. Okada, and N. Sano
  • Organizer: 25th European Photovoltaic Solar Energy Conference and Exhibition (25thEUPVSEC)
  • Place of Presentation: Valencia, Spain
• [Presentation] Validation of nuclear reaction models relevant to cosmic-ray neutron induced single-event effects in microelectronics (2010)
  • Author(s): S. Abe, Y. Watanabe, S. Hirayama, N. Sano, Y. Tosaka, M. Tsutsui, H. Furuta and T. Imamura
  • Organizer: International Nuclear Physics Conference (INPC 2010)
  • Place of Presentation: Vancouver, Canada
• [Presentation] Quasi-Ballistic Transport in Nano-Scale Devices : Boundary Layer, Potential Fluctuation, and Coulomb Interaction (2010)
  • Author(s): N. Sano and T. Karasawa
  • Organizer: International Symposium on Technology Evolution for Silicon Nano-Electronics (ISTESNE)
  • Place of Presentation: Tokyo Institute of Technology
• [Presentation] Scaling FETs to 10 nm : Coulomb Effects, Source Starvation, and Virtual Source (2010)
  • Author(s): (INVITED) M. V. Fischetti, S. Jin, T.-w. Tang, P. Asbeck, Y. Taur, S. E. Laux, N. Sano, and M. Rodwell
  • Organizer: 217th ECS Meeting
  • Place of Presentation: Vancouver, Canada
• [Presentation] Quasi-Ballistic Transport in Nano-Scale Devices : Boundary Layer, Potential Fluctuation, and Coulomb Interaction (2010)
  • Author(s): Nobuyuki Sano
  • Organizer: International Conference on Simulation of Semiconductor Processes and Devices(SISPAD-2010)
  • Place of Presentation: Bologna, Italy(招待講演)
• [Presentation] Numerical Analysis of Electron Transport in Quasi Quantum Dot Superlattice (2009)
  • Author(s): K. Yoshida, Y. Okada and N. Sano
  • Organizer: Workshop on Information, Nano and Photonics Technology 2009 (WINPTech2009)
  • Place of Presentation: Kobe University
• [Presentation] Physical Model and Mesh-Size Dependence in Drift-Diffusion Simulations for Single-Event Effects by Heavy Ions (2009)
  • Author(s): N. Shibano, N. Sano, Y. Tosaka, H. Furuta, M. Tsutsui, and K. Imamura
  • Organizer: 2009 International Semiconductor Device Research Symposium (ISDRS 2009)
  • Place of Presentation: College Park, U.S.A
• [Presentation] Discrete Impurity and Mobility in Drift-Diffusion Simulations for Device Characteristics Variability (2009)
  • Author(s): T. Karasawa, K. Nakanishi, and N.Sano
  • Organizer: 2009 International Semiconductor Device Research Symposium (ISDRS 2009)
  • Place of Presentation: College Park, U.S.A
• [Presentation] Self-Consistent Monte Carlo Device Simulations under Nano-Scale Device Structures : Role of Coulomb interaction, Degeneracy, and Boundary Condition (2009)
  • Author(s): K. Nakanishi, T. Uechi, and N. Sano
  • Organizer: IEEE International Electron Devices Meeting (IEDM-2009)
  • Place of Presentation: Baltimore
• [Presentation] Simulation of Electron Transport in Si Nano Devices (2009)
  • Author(s): (INVITED) N. Sano
  • Organizer: G-COE PICE International Symposium on Silicon Nano Devices in 2030-Prospects by World's Leading Scientists
  • Place of Presentation: Tokyo Institute of Technology, Tokyo
• [Presentation] Scaling FETs to 10 nm : Coulomb Effects, Source Starvation, and Virtual Source (2009)
  • Author(s): (INVITED) M. V. Fischetti, S. Jin, T.-w. Tang, P. Asbeck, Y. Taur, S. E. Laux, and N. Sano
  • Organizer: International Workshop on Computational Electronics (IWCE-13)
  • Place of Presentation: Beijing, China
• [Presentation] Simulation of Electron Transport in Si Nano Devices (2009)
  • Author(s): Nobuyuki Sano
  • Organizer: International Symposium on Silicon Nano Devices in 2030 -Prospects by World's Leading Scientists
  • Place of Presentation: 東工大蔵前ホール
• [Remarks]
  • URL: http://hermes.esys.tsukuba.ac.jp/