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Simulation Study of Long-Range Coulomb Interaction in Nano-Scale Devices

Research Project

Project/Area Number 21360160
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section一般
Research Field Electron device/Electronic equipment
Research InstitutionUniversity of Tsukuba

Principal Investigator

SANO Nobuyuki  筑波大学, 数理物質系, 教授 (90282334)

Project Period (FY) 2009 – 2011
Project Status Completed (Fiscal Year 2011)
Budget Amount *help
¥17,550,000 (Direct Cost: ¥13,500,000、Indirect Cost: ¥4,050,000)
Fiscal Year 2011: ¥2,080,000 (Direct Cost: ¥1,600,000、Indirect Cost: ¥480,000)
Fiscal Year 2010: ¥7,280,000 (Direct Cost: ¥5,600,000、Indirect Cost: ¥1,680,000)
Fiscal Year 2009: ¥8,190,000 (Direct Cost: ¥6,300,000、Indirect Cost: ¥1,890,000)
Keywords電子デバイス / 集積回路 / 半導体デバイス / デバイス・シミュレーション / ボルツマン輸送方程式 / モンテカルロ法 / クーロン相互作用 / 電子輸送 / 計算物理 / 半導体物性
Research Abstract

We investigate the effect of the Coulomb interaction on device characteristics and its physical mechanism under the double-gate MOSFET structures by Monte Carlo simulations which take into account of the Coulomb interaction accurately. Potential fluctuations associated with the long-range part of the Coulomb interaction among electrons are also studied by looking at the local density of states in high-doped regions. We find that there are strong electron flows even inside the high-doped source regions near the channel junctions so that electrons there are in highly off-equilibrium. We also find that device characteristics strongly degrade if the channel length shrinks below 10 nm due to plasmon excitations by channel electrons through the Coulomb interaction.

Report

(4 results)
  • 2011 Annual Research Report   Final Research Report ( PDF )
  • 2010 Annual Research Report
  • 2009 Annual Research Report
  • Research Products

    (34 results)

All 2012 2011 2010 2009 Other

All Journal Article (16 results) (of which Peer Reviewed: 16 results) Presentation (17 results) Remarks (1 results)

  • [Journal Article] One-Flux Theory of Saturated Drain Current in Nanoscale Transistors2012

    • Author(s)
      T-w.Tang, M.V.Fischetti, S.Jin, N.Sano
    • Journal Title

      Solid State Electron

      Volume: (In press)

    • Related Report
      2011 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Impact of the Coulomb Interaction on Nano-Scale Silicon Device Characteristics2011

    • Author(s)
      N. Sano
    • Journal Title

      J. Comp. Electron

      Volume: 10 Issue: 1-2 Pages: 98-103

    • DOI

      10.1007/s10825-010-0327-6

    • NAID

      120007130717

    • Related Report
      2011 Final Research Report
    • Peer Reviewed
  • [Journal Article] Quasi-Ballistic Transport in Nano-Scale Devices : Boundary Layer, Potential Fluctuation, and Coulomb Interaction2011

    • Author(s)
      N.Sano, T.Karasawa
    • Journal Title

      Key Engineering Materials

      Volume: 470 Pages: 207-213

    • DOI

      10.4028/www.scientific.net/kem.470.207

    • Related Report
      2011 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Impact of the Coulomb Interaction on Nano-Scale Silicon Device Characteristics2011

    • Author(s)
      Nobuyuki Sano
    • Journal Title

      J.Comp.Electron.

      Volume: 98 Pages: 98-103

    • NAID

      120007130717

    • Related Report
      2011 Annual Research Report 2010 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Monte Carlo Study of the Coulomb Interaction in Nano-Scale Silicon Devices2011

    • Author(s)
      Nobuyuki Sano
    • Journal Title

      Jpn.J.Appl.Phys.

      Volume: 50

    • Related Report
      2010 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Monte Carlo Study of the Coulomb Interaction in Nano-Scale Silicon Devices2010

    • Author(s)
      N. Sano
    • Journal Title

      Jpn. J. Appl. Phys

      Volume: 50 Issue: 1R Pages: 010108-010108

    • DOI

      10.1143/jjap.50.010108

    • Related Report
      2011 Final Research Report
    • Peer Reviewed
  • [Journal Article] Self-Consistent Simulation of Intermediate Band Solar Cell : Effect of Occupation Rate on Device Characteristics2010

    • Author(s)
      K. Yoshida, Y. Okada and N. Sano
    • Journal Title

      Appl. Phys. Lett

      Volume: 97 Issue: 13

    • DOI

      10.1063/1.3488815

    • NAID

      120007137892

    • Related Report
      2011 Final Research Report
    • Peer Reviewed
  • [Journal Article] Pinch-off Voltage Lowering in Polycrystalline-Silicon Thin-Film Transistors2010

    • Author(s)
      H. Ikeda and N. Sano
    • Journal Title

      Jpn. J. Appl. Phys

      Volume: 50 Issue: 1R Pages: 014301-014301

    • DOI

      10.1143/jjap.50.014301

    • NAID

      40017446836

    • Related Report
      2011 Final Research Report
    • Peer Reviewed
  • [Journal Article] Self-Consistent Simulation of Intermediate Band Solar Ce-Effect of Occupation Rate on Device Characteristics2010

    • Author(s)
      Katsuhisa Yoshida, Yoshitaka Okada, Nobuyuki Sano
    • Journal Title

      Appl.Phys.Lett.

      Volume: 97

    • Related Report
      2010 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Scaling FETs to 10 nm : Coulomb Effects, Source Starvation, and Virtual Source2009

    • Author(s)
      M. V. Fischetti, S. Jin, T.-w. Tang, P. Asbeck, Y. Taur, S. E. Laux, and N. Sano
    • Journal Title

      J. Comp. Electron

      Volume: 2 Issue: 2 Pages: 60-77

    • DOI

      10.1007/s10825-009-0277-z

    • Related Report
      2011 Final Research Report
    • Peer Reviewed
  • [Journal Article] Analysis of Photon-Induced Drain Current in Polycrystalline-Silicon Thin-Film Transistors2009

    • Author(s)
      H. Ikeda and N. Sano
    • Journal Title

      Jpn. J. Appl. Phys

      Volume: 48 Issue: 10 Pages: 101201-101201

    • DOI

      10.1143/jjap.48.101201

    • NAID

      40016796029

    • Related Report
      2011 Final Research Report
    • Peer Reviewed
  • [Journal Article] Hole Mobility Enhancement Caused by Gate-Induced Vertical Strain in Gate-First Full-Metal High-k pFETs using Ion-Beam W2009

    • Author(s)
      F. Ootsuka, A. Katakami, K. Shirai, H. Nakata, T. Eimori, Y. Nara, Y. Ohji, K.Shimura, S. Horii, N. Sano, K. Yamabe
    • Journal Title

      Jpn. J. Appl. Phys

      Volume: 48 Issue: 5R Pages: 056502-056502

    • DOI

      10.1143/jjap.48.056502

    • Related Report
      2011 Final Research Report
    • Peer Reviewed
  • [Journal Article] 最先端デバイスのモンテカルロ法2009

    • Author(s)
      佐野伸行
    • Journal Title

      電気学会誌

      Volume: 12月号 Pages: 796-799

    • NAID

      10026224039

    • Related Report
      2011 Final Research Report
    • Peer Reviewed
  • [Journal Article] Analysis of Photon-Induced Drain Current in Polycrystalline-Silicon Thin-Film Transistors2009

    • Author(s)
      F.Ootsuka, A.Katakami, K.Shirai, H.i Nakata, T.Eimori, Y.Nara, Y.Ohji, K.Shimura, S.Horii, N.Sano, K.Yamabe
    • Journal Title

      Jpn.J.Appl.Phys. 48

    • NAID

      40016796029

    • Related Report
      2009 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Analysis of Photon-Induced Drain Current in Polycrystalline-Silicon Thin-Film Transistors2009

    • Author(s)
      H.Ikeda, N.Sano
    • Journal Title

      Jpn.J.Appl.Phys. 48

    • NAID

      40016796029

    • Related Report
      2009 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Scaling FETs to 10nm : Coulomb Effects, Source Starvation, and Virtua 1 Source2009

    • Author(s)
      M.V.Fischetti, S.Jin, T.-w.Tang, P.Asbeck, Y.Taur, S.E.Laux, N.Sano
    • Journal Title

      J.Comp.Electron. 2

      Pages: 60-77

    • Related Report
      2009 Annual Research Report
    • Peer Reviewed
  • [Presentation] The Role of High-Doped Source and Drain on Device Performance in Nano-Scale Si-MOSFETs2011

    • Author(s)
      (INVITED) N. Sano
    • Organizer
      2011 International Meeting for Future of Electron Devices, Kansai (IMFEDK)
    • Place of Presentation
      Kansai Univ
    • Related Report
      2011 Final Research Report
  • [Presentation] Self-Consistent Monte Carlo Study of the Coulomb Interaction under Nano-Scale Device Structures2011

    • Author(s)
      N. Sano
    • Organizer
      The American Physica Society March Meeting
    • Place of Presentation
      Dallas, U.S.A
    • Related Report
      2011 Final Research Report
  • [Presentation] The Role of High-Doped Source and Drain on Device Performance in Nano-Scale Si-MOSFETs2011

    • Author(s)
      Nobuyuki Sano
    • Organizer
      2011 International Meeting for Future of Electron Devices, Kansai (IMFEDK)
    • Place of Presentation
      Kansai Univ.(Osaka)(INVITED)
    • Related Report
      2011 Annual Research Report
  • [Presentation] Model-Comparison Study of Quasi-Ballistic Electron Transport in Nanoscale Semiconductor Devices2010

    • Author(s)
      T-w. Tang, I. Yoon, N. Sano, S. Jin, M. Fischetti, and Y. J. Park
    • Organizer
      International Workshop on Computational Electronics (IWCE-14)
    • Place of Presentation
      Pisa, Italy
    • Related Report
      2011 Final Research Report
  • [Presentation] Quasi-Ballistic Transport in Nano-Scale Devices : Boundary Layer, Potential Fluctuation, and Coulomb Interaction2010

    • Author(s)
      (INVITED) N. Sano
    • Organizer
      International Conference on Simulation of Semiconductor Processes and Devices (SISPAD-2010)
    • Place of Presentation
      Bologna, Italy
    • Related Report
      2011 Final Research Report
  • [Presentation] Self-Consistent Drift-Diffusion Approach for Analysis of Intermediate Band Solar Cells with Multi-Stacked Quantum Dots2010

    • Author(s)
      K. Yoshida, Y. Okada, and N. Sano
    • Organizer
      25th European Photovoltaic Solar Energy Conference and Exhibition (25thEUPVSEC)
    • Place of Presentation
      Valencia, Spain
    • Related Report
      2011 Final Research Report
  • [Presentation] Validation of nuclear reaction models relevant to cosmic-ray neutron induced single-event effects in microelectronics2010

    • Author(s)
      S. Abe, Y. Watanabe, S. Hirayama, N. Sano, Y. Tosaka, M. Tsutsui, H. Furuta and T. Imamura
    • Organizer
      International Nuclear Physics Conference (INPC 2010)
    • Place of Presentation
      Vancouver, Canada
    • Related Report
      2011 Final Research Report
  • [Presentation] Quasi-Ballistic Transport in Nano-Scale Devices : Boundary Layer, Potential Fluctuation, and Coulomb Interaction2010

    • Author(s)
      N. Sano and T. Karasawa
    • Organizer
      International Symposium on Technology Evolution for Silicon Nano-Electronics (ISTESNE)
    • Place of Presentation
      Tokyo Institute of Technology
    • Related Report
      2011 Final Research Report
  • [Presentation] Scaling FETs to 10 nm : Coulomb Effects, Source Starvation, and Virtual Source2010

    • Author(s)
      (INVITED) M. V. Fischetti, S. Jin, T.-w. Tang, P. Asbeck, Y. Taur, S. E. Laux, N. Sano, and M. Rodwell
    • Organizer
      217th ECS Meeting
    • Place of Presentation
      Vancouver, Canada
    • Related Report
      2011 Final Research Report
  • [Presentation] Quasi-Ballistic Transport in Nano-Scale Devices : Boundary Layer, Potential Fluctuation, and Coulomb Interaction2010

    • Author(s)
      Nobuyuki Sano
    • Organizer
      International Conference on Simulation of Semiconductor Processes and Devices(SISPAD-2010)
    • Place of Presentation
      Bologna, Italy(招待講演)
    • Related Report
      2010 Annual Research Report
  • [Presentation] Numerical Analysis of Electron Transport in Quasi Quantum Dot Superlattice2009

    • Author(s)
      K. Yoshida, Y. Okada and N. Sano
    • Organizer
      Workshop on Information, Nano and Photonics Technology 2009 (WINPTech2009)
    • Place of Presentation
      Kobe University
    • Related Report
      2011 Final Research Report
  • [Presentation] Physical Model and Mesh-Size Dependence in Drift-Diffusion Simulations for Single-Event Effects by Heavy Ions2009

    • Author(s)
      N. Shibano, N. Sano, Y. Tosaka, H. Furuta, M. Tsutsui, and K. Imamura
    • Organizer
      2009 International Semiconductor Device Research Symposium (ISDRS 2009)
    • Place of Presentation
      College Park, U.S.A
    • Related Report
      2011 Final Research Report
  • [Presentation] Discrete Impurity and Mobility in Drift-Diffusion Simulations for Device Characteristics Variability2009

    • Author(s)
      T. Karasawa, K. Nakanishi, and N.Sano
    • Organizer
      2009 International Semiconductor Device Research Symposium (ISDRS 2009)
    • Place of Presentation
      College Park, U.S.A
    • Related Report
      2011 Final Research Report
  • [Presentation] Self-Consistent Monte Carlo Device Simulations under Nano-Scale Device Structures : Role of Coulomb interaction, Degeneracy, and Boundary Condition2009

    • Author(s)
      K. Nakanishi, T. Uechi, and N. Sano
    • Organizer
      IEEE International Electron Devices Meeting (IEDM-2009)
    • Place of Presentation
      Baltimore
    • Related Report
      2011 Final Research Report
  • [Presentation] Simulation of Electron Transport in Si Nano Devices2009

    • Author(s)
      (INVITED) N. Sano
    • Organizer
      G-COE PICE International Symposium on Silicon Nano Devices in 2030-Prospects by World's Leading Scientists
    • Place of Presentation
      Tokyo Institute of Technology, Tokyo
    • Related Report
      2011 Final Research Report
  • [Presentation] Scaling FETs to 10 nm : Coulomb Effects, Source Starvation, and Virtual Source2009

    • Author(s)
      (INVITED) M. V. Fischetti, S. Jin, T.-w. Tang, P. Asbeck, Y. Taur, S. E. Laux, and N. Sano
    • Organizer
      International Workshop on Computational Electronics (IWCE-13)
    • Place of Presentation
      Beijing, China
    • Related Report
      2011 Final Research Report
  • [Presentation] Simulation of Electron Transport in Si Nano Devices2009

    • Author(s)
      Nobuyuki Sano
    • Organizer
      International Symposium on Silicon Nano Devices in 2030 -Prospects by World's Leading Scientists
    • Place of Presentation
      東工大蔵前ホール
    • Related Report
      2009 Annual Research Report
  • [Remarks]

    • URL

      http://hermes.esys.tsukuba.ac.jp/

    • Related Report
      2011 Final Research Report

URL: 

Published: 2009-04-01   Modified: 2016-04-21  

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