Development of light emitting devices in 1. 5μm range using germanium epitaxial layers on silicon
| Project/Area Number |
21360163
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electron device/Electronic equipment
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| Research Institution | The University of Tokyo |
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Principal Investigator |
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| Co-Investigator(Kenkyū-buntansha) |
SHIMURA Takayoshi 大阪大学, 大学院・工学研究科, 准教授 (90252600)
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| Co-Investigator(Renkei-kenkyūsha) |
WADA Kazumi 東京大学, 大学院・工学系研究科, 教授 (30376511)
KONDO Takashi 東京大学, 大学院・工学系研究科, 教授 (60205557)
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| Project Period (FY) |
2009 – 2011
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| Project Status |
Completed (Fiscal Year 2011)
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| Budget Amount *help |
¥18,330,000 (Direct Cost: ¥14,100,000、Indirect Cost: ¥4,230,000)
Fiscal Year 2011: ¥3,380,000 (Direct Cost: ¥2,600,000、Indirect Cost: ¥780,000)
Fiscal Year 2010: ¥3,380,000 (Direct Cost: ¥2,600,000、Indirect Cost: ¥780,000)
Fiscal Year 2009: ¥11,570,000 (Direct Cost: ¥8,900,000、Indirect Cost: ¥2,670,000)
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| Keywords | シリコンフォトニクス / ゲルマニウム / 発光 / MBE、エピタキシャル / 半導体物性 / 光物性 / 光源技術 / 微小共振器 |
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| Research Abstract |
Using Ge epitaxial layers on Si substrate, light-emitting devices were studied in the 1. 55μm range by a current injection. Light emission was observed in the 1. 55μm range due to the direct transition induced by a current injection into Ge pin diodes on Si. In order to increase the efficiency of light emission, it should be important to realize an injection of electrons into the conduction band at theΓvalley of Ge, followed by the recombination with holes in the valence band. A structure of n-GaAs/i-Ge/p-Si was investigated, where GaAs with the conduction band minimum at theΓvalley can be used for the electron injection.
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Report
(4 results)
Research Products
(18 results)
