| Budget Amount *help |
¥17,940,000 (Direct Cost: ¥13,800,000、Indirect Cost: ¥4,140,000)
Fiscal Year 2011: ¥4,810,000 (Direct Cost: ¥3,700,000、Indirect Cost: ¥1,110,000)
Fiscal Year 2010: ¥5,980,000 (Direct Cost: ¥4,600,000、Indirect Cost: ¥1,380,000)
Fiscal Year 2009: ¥7,150,000 (Direct Cost: ¥5,500,000、Indirect Cost: ¥1,650,000)
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| Research Abstract |
The objective of this study is to solve the bottleneck of the direct modulation bandwidth of semiconductor lasers by controlling the energy relaxation of the carrier. The study of quantum structure and device fabrication was carried out. To clarify the theoretical validity of the mechanism, the specific structure was proposed and the theoretical characteristics were investigated. Experimentally, prototype of the proposed laser was fabricated and the fundamental properties and the issues for high-speed operation of lasers were clarified.
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