Fabrication of normally-off GaN MISFETs for high-power application

• Project/Area Number: 21360168
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Electron device/Electronic equipment
• Research Institution: Nagoya University
• Principal Investigator: MIZUTANI Takashi 名古屋大学, 工学研究科, 教授 (70273290)
• Co-Investigator(Kenkyū-buntansha): KISHIMOTO Shigeru 名古屋大学, 工学研究科, 助教 (10186215)
• Project Period (FY): 2009 – 2011
• Project Status: Completed (Fiscal Year 2011)
• Budget Amount: ¥18,330,000 (Direct Cost: ¥14,100,000、Indirect Cost: ¥4,230,000); Fiscal Year 2011: ¥3,900,000 (Direct Cost: ¥3,000,000、Indirect Cost: ¥900,000); Fiscal Year 2010: ¥3,900,000 (Direct Cost: ¥3,000,000、Indirect Cost: ¥900,000); Fiscal Year 2009: ¥10,530,000 (Direct Cost: ¥8,100,000、Indirect Cost: ¥2,430,000)
• Keywords: GaN / MISFET / ノーマリオフ / Al_2O_3, InGaN cap / 硫化アンモニウム処理 / gate firstプロセス / 高出力 / AlGaN/GaN / InGaN cap / 薄層GaN

Research Abstract

Novel p-InGaN/AlGaN/GaN MISFET was proposed and normally-off operation of the MISFETs with a threshold voltage of 1. 2 V was realized. Concerning the gate insulator, ALD-grown Al_2O-3 was shown to be better than HfO-2 from the view point of transient behavior of the devices.(NH-4)-2S treatment before the gate insulator deposition and gate first process where gate insulator was deposited before ohmic contact formation was effective in decreasing the interface state density.

Research Products

• [Journal Article] Comparative study of AlGaN/GaN metal. oxide. semiconductor heterostructure field-effect transistors with Al2O3 and HfO2 gate oxide (2011)
  • Author(s): Kishimoto, M. Kitamura
  • Journal Title: Solid State Electron Volume: 62 Issue: 1 Pages: 152-155
  • DOI: 10.1016/j.sse.2011.04.017
  • Peer Reviewed
• [Journal Article] Analysis of transient be havior of AlGaN/GaN MOSHFET (2010)
  • Author(s): Y. Hayashi, S. Kishimoto, and T. Mizutani
  • Journal Title: Solid State Electron Volume: 54 Issue: 11 Pages: 1451-1456
  • DOI: 10.1016/j.sse.2010.07.001
  • Peer Reviewed
• [Journal Article] AlGaN/GaN MOSHFETs with HfO_2 gate oxide : A simulation study (2010)
  • Author(s): Y. Hayashi, S. Sugiura, S. Kishimoto, and T. Mizutani
  • Journal Title: Solid State Electron Volume: 54 Issue: 11 Pages: 1367-1371
  • DOI: 10.1016/j.sse.2010.03.022
  • Peer Reviewed
• [Journal Article] Fabrication of normally-off mode GaN and AlGaN/GaN MOSFETs with HfO2 gate insulator (2010)
  • Author(s): S. Sugiura, Y. Hayashi, S. Kishimoto, T. Mizutani, M. Kuroda, T. Ueda, T. Tanaka
  • Journal Title: Solid State Electron Volume: 54 Issue: 1 Pages: 79-83
  • DOI: 10.1016/j.sse.2009.10.007
  • Peer Reviewed
• [Journal Article] Analysis of transient behavior of AlGaN/GaN MOSHFET (2010)
  • Author(s): Y.Hayashi, S.Kishimoto, T.Mizutani
  • Journal Title: Solid State Electron. Volume: 54 Pages: 1451-1456
  • Peer Reviewed
• [Journal Article] AIGaN/GaN MOSHFETs with HfO2 gate oxide : A simulation study (2010)
  • Author(s): Y.Hayashi, S.Sugiura, S.Kishimoto, T.Mizutani
  • Journal Title: Solid State Electron. Volume: 54 Pages: 1367-1371
  • Peer Reviewed
• [Journal Article] Fabrication of normally-off mode GaN and AlGaN/GaN MOSFETs with HfO_2 gate insulator (2010)
  • Author(s): S.Sugiura, Y.Hayashi, S.Kishimoto, T.Mizutani, et al.
  • Journal Title: Solid-State Electronics Volume: 54 Pages: 79-83
  • Peer Reviewed
• [Presentation] ゲート先行プロセスによるAl2O3 AlGaN/GaN MOSHFET特性の改善 (2012)
  • Author(s): 宮崎英志、岸本茂、水谷孝
  • Organizer: 第59回春季応用物理学関係連合講演会
  • Place of Presentation: 早稲田大学
  • Year and Date: 2012-03-17
• [Presentation] i-GaN薄層挿入によるp-InGaN cap Normally-off型AlGaN/GaN HEMETのゲートリーク電流の低減 (2012)
  • Author(s): 山田博之、岸本茂、水谷孝
  • Organizer: 第59回春季応用物理学関係連合講演会
  • Place of Presentation: 早稲田大学
  • Year and Date: 2012-03-17
• [Presentation] 原子層成膜Al2O3をゲート絶縁膜とするGaN MOSHFETの作製・評価 (2012)
  • Author(s): 宮崎英志、岸本茂、水谷孝
  • Organizer: 電気学会電子デバイス研究会
  • Place of Presentation: 一碧荘
  • Year and Date: 2012-03-08
• [Presentation] Improvement of the electrical properties of Al2O3/AlGaN/GaN MOSHFETs by(NH4) 2S surface treatments (2011)
  • Author(s): E. Miyazaki and T. Mizutani
  • Organizer: 11th Akasaki Research Center Symposium
  • Place of Presentation: Nagoya
  • Year and Date: 2011-12-09
• [Presentation] Improvement of the electrical properties of Al2O3/AlGaN/GaN MOSFETs by(NH4) 2S surface treatments (2011)
  • Author(s): E. Miyazaki, S. Kishimoto and T. Mizutani
  • Organizer: 11th Topical Workshop on Heterostructure Microelectronics
  • Place of Presentation: Gifu, Japan
  • Year and Date: 2011-08-29
• [Presentation] NORMALLY-OFF MODE ALGAN/GAN HEMTS WITH P-INGAN CAP LAYER (2011)
  • Author(s): T. Mizutani, X. Li, S. Kishimoto, and F. Nakamura
  • Organizer: WOCSDICE2011
  • Place of Presentation: Catania, Italy
  • Year and Date: 2011-06-01
• [Presentation] Improvement of the electrical properties of Al2O3/AlGaN/GaN MOSFETs by(NH4) 2S surface treatments (2011)
  • Author(s): E. Miyazaki, S. Kishimoto, and T. Mizutani
  • Organizer: 5th Asia-Pacific Workshop on Widegap Semiconductors
  • Place of Presentation: Toba, Japan
  • Year and Date: 2011-05-22
• [Presentation] 原子層成膜Al2O3をゲート絶縁膜とするGaNMOSFETの作製・評価 (2011)
  • Author(s): 宮崎英志,合田祐司,岸本茂,水谷孝
  • Organizer: 電子情報通信学会、電子デバイス研究会
  • Place of Presentation: 名古屋大学
  • Year and Date: 2011-05-20
• [Presentation] (NH4) 2S処理によるAl2O3 AlGaN/GaN MOS FET特性の改善 (2011)
  • Author(s): 宮崎英志,岸本茂,水谷孝
  • Organizer: 第58回応用物理学関係連合講演会
  • Place of Presentation: 神奈川工科大学
  • Year and Date: 2011-03-27
• [Presentation] Normally-off mode AlGaN/GaN HEMTs with p-InGaN cap layer (2010)
  • Author(s): T. Mizutani, X. Li, and F. Nakamura
  • Organizer: 10th Akasaki Research Center Symposium
  • Place of Presentation: Nagoya
  • Year and Date: 2010-11-26
• [Presentation] Analysis of transient behavior of AlGaN/GaN MOSFET (2010)
  • Author(s): T. Mizutani and Y. Hayashi
  • Organizer: 9th Akasaki Research Center Symposium
  • Place of Presentation: Nagoya
  • Year and Date: 2010-03-12
• [Presentation] HfO2/AlGaN/GaN MOSFETの過渡応答解析 (2010)
  • Author(s): 林慶寿,杉浦俊,岸本茂,水谷孝
  • Organizer: 電子情報通信学会、電子デバイス研究会
  • Place of Presentation: 東京
  • Year and Date: 2010-01-14
• [Presentation] HfO2/AlGaN/GaN MOSFETのデバイスシミュレーション:過渡状態解 (2009)
  • Author(s): 林慶寿,岸本茂,水谷孝
  • Organizer: 第70回応用物理学会学術講演会
  • Place of Presentation: 富山大学.
  • Year and Date: 2009-09-07
• [Presentation] AlGaN/GaN MOSFETs with Al2O3 Gate Oxide Deposited by Atomic Layer Deposition (2009)
  • Author(s): E. Miyazaki, Y. Goda, S. Kishimoto, T. Mizutani
  • Organizer: 8th Topical Workshop on Heterostructure Microelectronics
  • Place of Presentation: Mielparque-Nagano, Nagano, Japan
  • Year and Date: 2009-08-25
• [Presentation] Effects of HfO2/AlGaN interface of HfO2/AlGaN/GaN MOSFET studied by device simulation (2009)
  • Author(s): Y. Hayashi, S. Sugiura, S. Kishimoto, T. Mizutani
  • Organizer: 8th Topical Workshop on Heterostructure Microelectronics
  • Year and Date: 2009-08-25
• [Presentation] Normally-Off Mode AlGaN/GaN HEMTs with p-InGaN Cap Layer (2009)
  • Author(s): Xu Li, S. Kishimoto, F. Nakamura, T. Mizutani
  • Organizer: 8th Topical Workshop on Heterostructure Microelectronics
  • Place of Presentation: Heterostructure Microelectronics, 2009. 08. 25, Mielparque-Nagano, Nagano, Japan. Mielparque-Nagano, Nagano, Japan.
  • Year and Date: 2009-08-25
• [Presentation] Effects of HfO_2/AlGaN interface of HfO_2/AlGaN/GaN MOSFET studied by device simulation (2009)
  • Author(s): Y.Hayashi, S.Sugiura, S.Kishimoto, T.Mizutani
  • Organizer: 8^<th> Topical Workshop on Heterostructure Microelectronics (TWHM 2009)
  • Place of Presentation: Mielparque-Nagano, Nagano, Japan
  • Year and Date: 2009-08-25
• [Remarks]
  • URL: http://qed63.qd.nuqe.nagoya-u.ac.jp/public-j/
• [Remarks]
  • URL: http://qed63.qd.nuqe.nagoya-u.ac.jp/public-j/
• [Patent(Industrial Property Rights)] 電界効果トランジスタ (2012)
  • Inventor(s): 水谷孝
  • Industrial Property Rights Holder: 水谷孝
  • Filing Date: 2012-02-28