Fabrication of normally-off GaN MISFETs for high-power application
Project/Area Number |
21360168
|
Research Category |
Grant-in-Aid for Scientific Research (B)
|
Allocation Type | Single-year Grants |
Section | 一般 |
Research Field |
Electron device/Electronic equipment
|
Research Institution | Nagoya University |
Principal Investigator |
|
Co-Investigator(Kenkyū-buntansha) |
KISHIMOTO Shigeru 名古屋大学, 工学研究科, 助教 (10186215)
|
Project Period (FY) |
2009 – 2011
|
Project Status |
Completed (Fiscal Year 2011)
|
Budget Amount *help |
¥18,330,000 (Direct Cost: ¥14,100,000、Indirect Cost: ¥4,230,000)
Fiscal Year 2011: ¥3,900,000 (Direct Cost: ¥3,000,000、Indirect Cost: ¥900,000)
Fiscal Year 2010: ¥3,900,000 (Direct Cost: ¥3,000,000、Indirect Cost: ¥900,000)
Fiscal Year 2009: ¥10,530,000 (Direct Cost: ¥8,100,000、Indirect Cost: ¥2,430,000)
|
Keywords | GaN / MISFET / ノーマリオフ / Al_2O_3, InGaN cap / 硫化アンモニウム処理 / gate firstプロセス / 高出力 / AlGaN/GaN / InGaN cap / 薄層GaN |
Research Abstract |
Novel p-InGaN/AlGaN/GaN MISFET was proposed and normally-off operation of the MISFETs with a threshold voltage of 1. 2 V was realized. Concerning the gate insulator, ALD-grown Al_2O-3 was shown to be better than HfO-2 from the view point of transient behavior of the devices.(NH-4)-2S treatment before the gate insulator deposition and gate first process where gate insulator was deposited before ohmic contact formation was effective in decreasing the interface state density.
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Report
(4 results)
Research Products
(27 results)