Experimental research on negative electron affinity device utilizing diamond pn junctions
| Project/Area Number |
21360174
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electron device/Electronic equipment
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| Research Institution | National Institute for Materials Science |
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Principal Investigator |
KOIZUMI Satoshi 独立行政法人物質・材料研究機構, 光・電子材料ユニット, 主幹研究員 (90215153)
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| Project Period (FY) |
2009 – 2011
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| Project Status |
Completed (Fiscal Year 2011)
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| Budget Amount *help |
¥18,200,000 (Direct Cost: ¥14,000,000、Indirect Cost: ¥4,200,000)
Fiscal Year 2011: ¥2,600,000 (Direct Cost: ¥2,000,000、Indirect Cost: ¥600,000)
Fiscal Year 2010: ¥5,460,000 (Direct Cost: ¥4,200,000、Indirect Cost: ¥1,260,000)
Fiscal Year 2009: ¥10,140,000 (Direct Cost: ¥7,800,000、Indirect Cost: ¥2,340,000)
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| Keywords | 電子デバイス / 集積回路 / ダイヤモンドpn接合 / 負性電子親和力 / ダイヤモンド / CVD / pn接合 / 冷陰極 |
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| Research Abstract |
In this research program, a development of highly efficient cold cathode has been performed utilizing pn junction of diamond focusing on the negative electron affinity nature. The electron emission efficiency of 7.5% was achieved from diamond pn junction cold cathode with excellent stability over time. The energy of emitted electron was about 4.1 eV above the Fermi level of p-type diamond and it convinces that the electron transported through pn junction interface into p-type diamond drifts through conduction band and emitted into vacuum easily with the help of negative electron affinity nature.
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Report
(4 results)
Research Products
(31 results)
