Experimental research on negative electron affinity device utilizing diamond pn junctions

• Project/Area Number: 21360174
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Electron device/Electronic equipment
• Research Institution: National Institute for Materials Science
• Principal Investigator: KOIZUMI Satoshi 独立行政法人物質・材料研究機構, 光・電子材料ユニット, 主幹研究員 (90215153)
• Project Period (FY): 2009 – 2011
• Project Status: Completed (Fiscal Year 2011)
• Budget Amount: ¥18,200,000 (Direct Cost: ¥14,000,000、Indirect Cost: ¥4,200,000); Fiscal Year 2011: ¥2,600,000 (Direct Cost: ¥2,000,000、Indirect Cost: ¥600,000); Fiscal Year 2010: ¥5,460,000 (Direct Cost: ¥4,200,000、Indirect Cost: ¥1,260,000); Fiscal Year 2009: ¥10,140,000 (Direct Cost: ¥7,800,000、Indirect Cost: ¥2,340,000)
• Keywords: 電子デバイス / 集積回路 / ダイヤモンドpn接合 / 負性電子親和力 / ダイヤモンド / CVD / pn接合 / 冷陰極

Research Abstract

In this research program, a development of highly efficient cold cathode has been performed utilizing pn junction of diamond focusing on the negative electron affinity nature. The electron emission efficiency of 7.5% was achieved from diamond pn junction cold cathode with excellent stability over time. The energy of emitted electron was about 4.1 eV above the Fermi level of p-type diamond and it convinces that the electron transported through pn junction interface into p-type diamond drifts through conduction band and emitted into vacuum easily with the help of negative electron affinity nature.

Research Products

• [Journal Article] Forward tunneling current in{111}-oriented homoepitaxial diamond p-n junction (2012)
  • Author(s): Y. Garino, T. Teraji, A. Lazea and S. Koizumi
  • Journal Title: Diamond & Related Materials Volume: 21 Pages: 33-36
  • Peer Reviewed
• [Journal Article] Forward tunneling current in {111}-oriented homoepitaxial diamond p-n junction (2012)
  • Author(s): Yiuri Garino
  • Journal Title: Diamond & Related Materials Volume: 21 Pages: 33-36
  • DOI: 10.1016/j.diamond.2011.10.007
  • Peer Reviewed
• [Journal Article] Enhancement in emission efficiency of diamond deep-ultraviolet light emitting diode (2011)
  • Author(s): Toshiharu Makino
  • Journal Title: APPLIED PHYSICS LETTERS Volume: 99 Issue: 6 Pages: 61-110
  • DOI: 10.1063/1.3625943
  • Peer Reviewed
• [Journal Article] 工業用ダイヤモンドのpn接合と光電子デバイスへの応用 (2010)
  • Author(s): 小泉聡
  • Journal Title: 月刊マテリアルステージ(技術情報協会) Volume: 10(7) Pages: 66-67
• [Journal Article] Light intensity dependence of photocurrent gain in single-crystal diamond detectors (2010)
  • Author(s): MY.Liao, X.Wang, T.Teraji, S.Koizumi, Y.Koide
  • Journal Title: PHYSICAL REVIEW B Volume: 81(3) Pages: 33304-33304
  • Peer Reviewed
• [Journal Article] Effects of shallow traps on the reverse current of diamond Schottky diode : An electrical transient study (2010)
  • Author(s): Y.Garino, T.Teraji, S.Koizumi, Y.Koide, T.Ito
  • Journal Title: PHYSICA STATUS SOLIDI A Volume: 207(6) Pages: 1460-1463
  • Peer Reviewed
• [Journal Article] Suspended Single-Crystal Diamond Nanowires for High-Performance Nanoelectromechanical Switches (2010)
  • Author(s): MY.Liao, S.Hishita, E.Watanabe, S.Koizumi, Y.Koide
  • Journal Title: ADVANCED MATERIALS Volume: 22(47) Pages: 5393-5393
  • Peer Reviewed
• [Journal Article] 人工衛星搭載ダイヤモンドPINセンサー (2010)
  • Author(s): 小泉聡
  • Journal Title: ニューダイヤモンド(JNDF) Volume: 26(3) Pages: 44-45
• [Journal Article] Images and Energy Distributions of Electrons Emitted from a Diamond pn-Junction Diode (2009)
  • Author(s): Shozo Kono, Satoshi Koizumi
  • Journal Title: Journal of Surface Science and Nanotechnology Volume: 7 Pages: 660-664
  • NAID: 130004934075
  • Peer Reviewed
• [Journal Article] Images and Energy Distributions of Electrons Emitted from a Diamondpn-Junction Diode (2009)
  • Author(s): Shozo Kono, Satoshi Koizumi
  • Journal Title: e-Journal of Surface Science and Nanotechnology 7 Pages: 660-664
  • NAID: 130004934075
  • Peer Reviewed
• [Journal Article] Rectifying properties and photoresponse of CVD diamond p(i)n-junctions (2009)
  • Author(s): Ken Haenen, Andrada Lazea, Milos Nesladek, Satoshi Koizumi
  • Journal Title: PHYSICA STATUS SOLIDI A 3(6) Pages: 208-210
  • Peer Reviewed
• [Presentation] Incorporation efficiencies of phosphorous for CVD diamond (2012)
  • Author(s): 小泉聡
  • Organizer: Hasselt Diamond Workshop 2012
  • Place of Presentation: The cultuurcentrum Hasselt, Hasselt, Belgium
  • Year and Date: 2012-03-14
• [Presentation] ダイヤモンドpn接合陰極の動作特性 (2011)
  • Author(s): 小泉聡
  • Organizer: 第72回応用物理学会学術講演会
  • Place of Presentation: 山形大学小白川キャンパス,山形市
  • Year and Date: 2011-08-30
• [Presentation] リンドープn型ヘテロエピダイヤモンド(001)表面エネルギーバンドダイヤグラム (2011)
  • Author(s): 河野省三
  • Organizer: 第72回応用物理学会学術講演会
  • Place of Presentation: 山形大学小白川キャンパス,山形市
  • Year and Date: 2011-08-30
• [Presentation] Emission current stability of diamond pn-junction cathode (2011)
  • Author(s): 小泉聡
  • Organizer: NDNC 2011
  • Place of Presentation: くにびきメッセ、島根県松江市
  • Year and Date: 2011-05-19
• [Presentation] Injection Mechanism in {111}-oriented homoepitaxial diamond p-n junction (2011)
  • Author(s): Yiuri Garino
  • Organizer: NDNC 2011
  • Place of Presentation: くにびきメッセ、島根県松江市
  • Year and Date: 2011-05-19
• [Presentation] Electronic structures of a phosphorus-doped n-type hetero-epitaxial diamond (001) surface (2011)
  • Author(s): 河野省三
  • Organizer: NDNC 2011
  • Place of Presentation: くにびきメッセ、島根県松江市
  • Year and Date: 2011-05-19
• [Presentation] Emission current stability of diamond pn junction cathode (2011)
  • Author(s): 小泉聡
  • Organizer: 2011 MRS Spring Meeting
  • Place of Presentation: Moscone West, San Francisco, USA
  • Year and Date: 2011-04-27
• [Presentation] High quality p-type {111} homoepitaxial diamond thin films produced for diamond based devices (2011)
  • Author(s): Andrada Lazea
  • Organizer: 2011 MRS Spring Meeting
  • Place of Presentation: Moscone West, San Francisco, USA
  • Year and Date: 2011-04-27
• [Presentation] ダイヤモンドpn接合陰極の放出電流安定性 (2011)
  • Author(s): 小泉聡
  • Organizer: 第58回応用物理学関係連合講演会
  • Place of Presentation: 神奈川工科大学(神奈川県)
  • Year and Date: 2011-03-26
• [Presentation] Emission current stability of diamond pn-junction cathode (2011)
  • Author(s): Satoshi Koizumi
  • Organizer: Hasselt Diamond Workshop 2011
  • Place of Presentation: ハッセルト文化センター、Hasselt(ベルギー)
  • Year and Date: 2011-02-23
• [Presentation] ダイヤモンドPN接合電子放出ダイオード (2010)
  • Author(s): 小泉聡
  • Organizer: 第71回応用物理学会学術講演会応用電子物性分科会/薄膜・表面物理分科会シンポジウム
  • Place of Presentation: 長崎大学文教キャンパス(長崎県)
  • Year and Date: 2010-09-14
• [Presentation] ダイヤモンドPN接合電子放出ダイオード (2010)
  • Author(s): 小泉聡
  • Organizer: 第71回応用物理学会学術講演会 応用電子物性分科会/薄膜・表面物理分科会シンポジウム
  • Place of Presentation: 長崎大学文教キャンパス(長崎県)(招待講演)
  • Year and Date: 2010-09-14
• [Presentation] An application of diamond pn junction-Electron emission from diamond pn junction- (2010)
  • Author(s): Satoshi Koizumi
  • Organizer: 4th International Conference on New Diamond and Nano Carbons(NDNC2010)
  • Place of Presentation: Garden Hotel Suzhou, Suzhou City(中国)
  • Year and Date: 2010-05-16
• [Presentation] An application of diamond pn junction-Electron emission from diamond pn junction- (2010)
  • Author(s): S.Koizumi, S.Kono
  • Organizer: 4th International Conference on New Diamond and Nano Carbons (NDNC2010)
  • Place of Presentation: Garden Hotel Suzhou, Suzhou City(中国)(招待講演)
  • Year and Date: 2010-05-16
• [Presentation] Effect of water absorption to the electron emission from diamond pn junction (2010)
  • Author(s): Satoshi Koizumi
  • Organizer: Hasselt Diamond Workshop 2010
  • Place of Presentation: ハジセルト文化センター、Hasselt、ベルギー
  • Year and Date: 2010-02-22
• [Presentation] Efficient NEA cathode operation of diamond pn junction (2009)
  • Author(s): Satoshi Koizumi
  • Organizer: 16^<th> International Display workshops(IDW' 09)
  • Place of Presentation: 宮崎県フェニックスシーガイアリゾート(宮崎県)
  • Year and Date: 2009-12-10
• [Presentation] Efficient NEA cathode operation of diamond pn junction (招待講演) (2009)
  • Author(s): Satoshi Koizumi, Shozo Kono
  • Organizer: 16^<th> International Display workshops (IDW '09)
  • Place of Presentation: 宮崎県フェニックスシーガイアリゾート(宮崎県)
  • Year and Date: 2009-12-10
• [Presentation] ダイヤモンドpn接合冷陰極特性に対する水吸着の影響 (2009)
  • Author(s): 小泉聡
  • Organizer: 第70回応用物理学会学術講演会
  • Place of Presentation: 富山大学(富山県)
  • Year and Date: 2009-09-10
• [Presentation] n-Type Doping and Related Results for Opto-electronic Applications of Diamond (2009)
  • Author(s): Satoshi Koizumi
  • Organizer: 2009 New Diamond and Nano Carbons Conference
  • Place of Presentation: Grand Traverse Resort & Spa, Traverse City, Michigan, USA
  • Year and Date: 2009-06-08
• [Presentation] n-Type Doping and Related Results for Opto-electronic Applications of Diamond (基調講演) (2009)
  • Author(s): Satoshi Koizumi
  • Organizer: 2009 New Diamond and Nano Carbons Conference
  • Place of Presentation: Grand Traverse Resort & Spa, Traverse City, Michigan, USA
  • Year and Date: 2009-06-08