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Crystal growth mechanism of SiC under metastable equilibrium

Research Project

Project/Area Number 21360371
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section一般
Research Field Metal making engineering
Research InstitutionKwansei Gakuin University

Principal Investigator

NISHITANI Shigeto  関西学院大学, 理工学部, 教授 (50192688)

Co-Investigator(Kenkyū-buntansha) YOSHIYA Masato  大阪大学, 工学研究科, 准教授 (00399601)
YASUDA Hideyuki  大阪大学, 工学研究科, 教授 (60239762)
NAKASHIMA Hideharu  九州大学, 総合理工学部, 教授 (80180280)
HATA Satoshi  九州大学, 総合理工学部, 准教授 (60264107)
IKEDA Kenichi  九州大学, 総合理工学部, 助教 (20335996)
FUJIWARA Hiroyasu  京都大学, エネルギー科学研究科, 准教授 (10238602)
Project Period (FY) 2009 – 2011
Project Status Completed (Fiscal Year 2011)
Budget Amount *help
¥18,330,000 (Direct Cost: ¥14,100,000、Indirect Cost: ¥4,230,000)
Fiscal Year 2011: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000)
Fiscal Year 2010: ¥5,200,000 (Direct Cost: ¥4,000,000、Indirect Cost: ¥1,200,000)
Fiscal Year 2009: ¥11,440,000 (Direct Cost: ¥8,800,000、Indirect Cost: ¥2,640,000)
Keywords第一原理計算 / 凝固プロセス / パワーデバイス / 状態図 / 有限温度計算 / 電子顕微鏡観察 / 熱力学測定
Research Abstract

Metastable Solvent Epixaty, MSE, is the cheep and stable process of 4H-SiC, which has been expected to be a next generation power device materials. For clarify this novel process, first principles calculations has been performed. Phonon calculations suggest the stability of 4H-SiC. Surface energy calculations shows that the (0001) surface is the most stable in Si-rich environment. Low activation energy of surface diffusion on (0001) C-face drives the flat growth of this surface.

Report

(4 results)
  • 2011 Annual Research Report   Final Research Report ( PDF )
  • 2010 Annual Research Report
  • 2009 Annual Research Report
  • Research Products

    (46 results)

All 2012 2011 2010 2009 Other

All Journal Article (3 results) (of which Peer Reviewed: 1 results) Presentation (36 results) Book (5 results) Remarks (2 results)

  • [Journal Article] 擬調和振動子近似による振動自由エネルギーの第一原理計算2009

    • Author(s)
      西谷滋人, 竹田諒平, 石井英樹, 山本洋佑, 金子忠昭
    • Journal Title

      日本金属学会誌

      Volume: 第73巻8号 Pages: 566-570

    • NAID

      10025156826

    • Related Report
      2011 Final Research Report
  • [Journal Article] 擬調和振動子近似による振動自由エネルギーの第一原理計算2009

    • Author(s)
      西谷滋人
    • Journal Title

      日本金属学会誌 73

      Pages: 566-570

    • NAID

      10025156826

    • Related Report
      2009 Annual Research Report
    • Peer Reviewed
  • [Journal Article]2009

    • Author(s)
      西谷滋人
    • Journal Title

      現代数理入門(関西学院大学出版会)

      Pages: 211-231

    • Related Report
      2009 Annual Research Report
  • [Presentation] Yosuke Yamamoto, and Tadaaki Kaneko2012

    • Author(s)
      Shigeto R. Nishitani
    • Organizer
      New Solution Method for SiC Crystal Growth(Invited talk)
    • Place of Presentation
      Orland, Florida(USA)
    • Year and Date
      2012-03-13
    • Related Report
      2011 Final Research Report
  • [Presentation] New Solution Method for SiC Crystal Growth2012

    • Author(s)
      Shigeto R.Nishitani
    • Organizer
      TMS 2012
    • Place of Presentation
      Orland, Florida(アメリカ)(Invited talk)
    • Year and Date
      2012-03-13
    • Related Report
      2011 Annual Research Report
  • [Presentation] 古典的核生成理論の見直しと第一原理計算2011

    • Author(s)
      西谷滋人
    • Organizer
      日本学術振興会「加工プロセスによる材料新機能発現」第176委員会第19回研究会「モデリング・シミュレーションによる材料研究」
    • Place of Presentation
      東京理科大学九段下校舎(依頼講演)
    • Year and Date
      2011-12-28
    • Related Report
      2011 Annual Research Report
  • [Presentation] 第一原理計算による半導体欠陥と機能2011

    • Author(s)
      西谷滋人
    • Organizer
      東北大学金属材料研究所ワークショップ「分野融合型格子欠陥研究の発展にむけて」
    • Place of Presentation
      東北大学金属材料研究所(依頼講演)
    • Year and Date
      2011-10-27
    • Related Report
      2011 Annual Research Report
  • [Presentation] 状態図と統計力学の基礎2011

    • Author(s)
      西谷滋人
    • Organizer
      学振状態図セミナー
    • Place of Presentation
      東京工業大学,大岡山キャンパス
    • Year and Date
      2011-10-18
    • Related Report
      2011 Annual Research Report
  • [Presentation] P,Bを含んだSi結晶の積層欠陥エネルギーの第一原理計算2011

    • Author(s)
      西谷滋人, 戸賀瀬健介, 大野裕, 徳本有紀, 米永一郎
    • Organizer
      日本物理学会2011年秋季大会
    • Place of Presentation
      富山大学(oral)
    • Year and Date
      2011-09-22
    • Related Report
      2011 Annual Research Report
  • [Presentation] SiC結晶多形における振動自由エネルギーの第一原理計算2011

    • Author(s)
      山本洋佑, 西谷滋人, 金子忠昭
    • Organizer
      日本物理学会2011年秋季大会
    • Place of Presentation
      富山大学(oral)
    • Year and Date
      2011-09-22
    • Related Report
      2011 Annual Research Report
  • [Presentation] First principles calculations on vibration free energies of SiC polytypes2011

    • Author(s)
      Yosuke Yamamoto, S.R.Nishitani, T.Kaneko
    • Organizer
      Calphad XL
    • Place of Presentation
      Rio de Janeiro, Brazil(poster)
    • Year and Date
      2011-05-23
    • Related Report
      2011 Annual Research Report
  • [Presentation] First principles calculations of stacking fault energy of P doped Sicrystal2011

    • Author(s)
      S.R.Nishitani, K.Togase, Y.Ohno, Y.Tokumoto, I.Yonenaga
    • Organizer
      Calphad XL
    • Place of Presentation
      Rio de Janeiro, Brazil(oral)
    • Year and Date
      2011-05-23
    • Related Report
      2011 Annual Research Report
  • [Presentation] 準安定溶媒エピタキシー法によるSiCの成長(oral)2011

    • Author(s)
      西谷滋人, 山本洋佑, 藤原弘康, 金子忠昭
    • Organizer
      合金状態図第172委員会第21回委員会・研究会
    • Place of Presentation
      伊藤忠テクノソリューションズ(株)・日本
    • Year and Date
      2011-04-21
    • Related Report
      2011 Final Research Report
  • [Presentation] 準安定溶媒エピタキシー法によるSiCの成長2011

    • Author(s)
      西谷滋人, 山本洋佑, 藤原弘康, 金子忠昭
    • Organizer
      合金状態図・第172委員会第21回委員会・研究会
    • Place of Presentation
      伊藤忠テクノソリューションズ(株)(oral)
    • Year and Date
      2011-04-21
    • Related Report
      2011 Annual Research Report
  • [Presentation] First principles calculations of structure energy difference of semiconductor compounds2010

    • Author(s)
      Y.Masaki
    • Organizer
      第20回日本MRS学術シンポジウム
    • Place of Presentation
      横浜市開港記念会館、横浜情報文化センター
    • Year and Date
      2010-12-20
    • Related Report
      2010 Annual Research Report
  • [Presentation] First principles calculations on local strains of SiGe alloys2010

    • Author(s)
      R.Taniguchi
    • Organizer
      第20回日本MRS学術シンポジウム
    • Place of Presentation
      横浜市開港記念会館、横浜情報文化センター
    • Year and Date
      2010-12-20
    • Related Report
      2010 Annual Research Report
  • [Presentation] 準安定溶媒エピタキシー(MSE)法によるSiCの結晶成長2010

    • Author(s)
      戸賀瀬健介
    • Organizer
      日本金属学会
    • Place of Presentation
      北海道大学
    • Year and Date
      2010-09-27
    • Related Report
      2010 Annual Research Report
  • [Presentation] SiCマイクロパイプ生成の環境依存性(poster)2010

    • Author(s)
      戸賀瀬健介, 西谷滋人, 金子忠昭
    • Organizer
      2010年日本金属学会秋季大会
    • Place of Presentation
      札幌・日本
    • Year and Date
      2010-09-25
    • Related Report
      2011 Final Research Report
  • [Presentation] 化合物半導体の積層欠陥エネルギーと構造エネルギー差2010

    • Author(s)
      正木佳宏
    • Organizer
      日本金属学会
    • Place of Presentation
      北海道大学
    • Year and Date
      2010-09-25
    • Related Report
      2010 Annual Research Report
  • [Presentation] SiGe固溶体の局所的な歪みの第一原理計算2010

    • Author(s)
      谷口僚
    • Organizer
      日本金属学会
    • Place of Presentation
      北海道大学
    • Year and Date
      2010-09-25
    • Related Report
      2010 Annual Research Report
  • [Presentation] SiCマイクロパイプ生成の環境依存性2010

    • Author(s)
      西谷滋人
    • Organizer
      日本金属学会
    • Place of Presentation
      北海道大学
    • Year and Date
      2010-09-25
    • Related Report
      2010 Annual Research Report
  • [Presentation] SiC polar surface energy by the first principles calculations2010

    • Author(s)
      K.Togase
    • Organizer
      Calphad XXXXIX
    • Place of Presentation
      Jeju, Korea
    • Year and Date
      2010-05-27
    • Related Report
      2010 Annual Research Report
  • [Presentation] Micropipes and surface energy of compound semiconductors2010

    • Author(s)
      Shigeto R.Nishitani
    • Organizer
      Calphad XXXXIX
    • Place of Presentation
      Jeju, Korea
    • Year and Date
      2010-05-27
    • Related Report
      2010 Annual Research Report
  • [Presentation] Local strains in SiGe alloys for the strained silicon2010

    • Author(s)
      R.Taniguchi
    • Organizer
      Calphad XXXXIX
    • Place of Presentation
      Jeju, Korea
    • Year and Date
      2010-05-23
    • Related Report
      2010 Annual Research Report
  • [Presentation] Stacking fault energy and structure energy difference of semiconductor ompounds2010

    • Author(s)
      Y.Masaki
    • Organizer
      Calphad XXXXIX
    • Place of Presentation
      Jeju, Korea
    • Year and Date
      2010-05-23
    • Related Report
      2010 Annual Research Report
  • [Presentation] 化合物半導体のマイクロパイプ生成と表面エネルギ2010

    • Author(s)
      西谷滋人
    • Organizer
      日本金属学会
    • Place of Presentation
      筑波大学(つくば)
    • Year and Date
      2010-03-29
    • Related Report
      2009 Annual Research Report
  • [Presentation] 積層欠陥エネルギーの第一原理計算2010

    • Author(s)
      西谷滋人
    • Organizer
      (社)日本鉄鋼協会 材料の組織と特性部会研究会,「加工硬化特性と組織」
    • Place of Presentation
      鉄鋼協会(東京)
    • Year and Date
      2010-03-15
    • Related Report
      2009 Annual Research Report
  • [Presentation] 準安定溶媒エピタキシー法の動作原理と環境依存性2009

    • Author(s)
      西谷滋人
    • Organizer
      SiC及び関連ワイドギャップ半導体研究会第18回講演会
    • Place of Presentation
      神戸国際会議場
    • Year and Date
      2009-12-17
    • Related Report
      2009 Annual Research Report
  • [Presentation] The first principles calculations on the surface diffusion of SiC2009

    • Author(s)
      Y.Yamamoto
    • Organizer
      第19回日本MRS学術シンポジウム
    • Place of Presentation
      横浜市開港記念会館、横浜情報文化センター
    • Year and Date
      2009-12-07
    • Related Report
      2009 Annual Research Report
  • [Presentation] SiC polar surface growth by the first principles calculations2009

    • Author(s)
      K.Togase
    • Organizer
      第19回日本MRS学術シンポジウム
    • Place of Presentation
      横浜市開港記念会館、横浜情報文化センター
    • Year and Date
      2009-12-07
    • Related Report
      2009 Annual Research Report
  • [Presentation] ZrCr_2 Laves相の熱安定性2009

    • Author(s)
      山本洋佑
    • Organizer
      日本物理学会
    • Place of Presentation
      熊本大学
    • Year and Date
      2009-09-26
    • Related Report
      2009 Annual Research Report
  • [Presentation] SiC結晶成長の第一原理計算2009

    • Author(s)
      西谷滋人
    • Organizer
      日本物理学会
    • Place of Presentation
      熊本大学
    • Year and Date
      2009-09-25
    • Related Report
      2009 Annual Research Report
  • [Presentation] SiC表面エネルギーの第一原理計算2009

    • Author(s)
      戸賀瀬健介
    • Organizer
      日本物理学会
    • Place of Presentation
      熊本大学
    • Year and Date
      2009-09-25
    • Related Report
      2009 Annual Research Report
  • [Presentation] Metastable Solvent Epitaxy of SiC ; another diamond synthetics2009

    • Author(s)
      S R. Nishitani, T. Kaneko and N. Ohtani
    • Organizer
      Thermec 09'
    • Place of Presentation
      Berlin, Germany
    • Year and Date
      2009-08-27
    • Related Report
      2011 Final Research Report 2009 Annual Research Report
  • [Presentation] Surface energy of SiC by first principles calculation2009

    • Author(s)
      K.Togase
    • Organizer
      Thermec 09'
    • Place of Presentation
      Berlin, Germany
    • Year and Date
      2009-08-27
    • Related Report
      2009 Annual Research Report
  • [Presentation] Surface diffusion of SiC by first principles calculation2009

    • Author(s)
      Y.Yamamoto
    • Organizer
      Thermec 09'
    • Place of Presentation
      Berlin, Germany
    • Year and Date
      2009-08-27
    • Related Report
      2009 Annual Research Report
  • [Presentation] Vibrational contribution on free energy change in binary system2009

    • Author(s)
      Shigeto R.Nishitani
    • Organizer
      CALPHAD XXXVIII
    • Place of Presentation
      Prague, Czech Republic
    • Year and Date
      2009-05-18
    • Related Report
      2009 Annual Research Report
  • [Presentation] First principles calculations on surface energy of SiC2009

    • Author(s)
      K.Togase
    • Organizer
      CALPHAD XXXVIII
    • Place of Presentation
      Prague, Czech Republic
    • Year and Date
      2009-05-18
    • Related Report
      2009 Annual Research Report
  • [Presentation] Vibration free energy of Cr_2Zr Laves phase2009

    • Author(s)
      Y.Yamamoto
    • Organizer
      CALPHAD XXXVIII
    • Place of Presentation
      Prague, Czech Republic
    • Year and Date
      2009-05-18
    • Related Report
      2009 Annual Research Report
  • [Book] Metastable Solvent Epitaxy of SiC, the Other Diamond Synthetics2011

    • Author(s)
      Shigeto R. Nishitani, Kensuke Togase, Yosuke Yamamoto, Hiroyasu Fujiwara, and Tadaaki Kaneko, Moumita Mukherjee
    • Publisher
      InTech
    • Related Report
      2011 Final Research Report
  • [Book] 「加工プロセスによる材料新機能発現」第176委員会第19回研究会資料2011

    • Author(s)
      西谷滋人
    • Publisher
      日本学術振興会
    • Related Report
      2011 Annual Research Report
  • [Book] 第5回状態図・熱力学セミナー「エネルギー・環境・資源問題と状態図の役割」2011

    • Author(s)
      西谷滋人
    • Publisher
      日本学術振興会
    • Related Report
      2011 Annual Research Report
  • [Book] Silicon Carbide, Materials, Processing and Applications in Electronic Devices(Edited by Moumita Mukherjee)2011

    • Author(s)
      Shigeto R.Nishitani, Kensuke Togase, Yosuke Yamamoto, Hiroyasu Fujiwara, Tadaaki Kaneko
    • Publisher
      InTech, Croatia
    • Related Report
      2011 Annual Research Report
  • [Book] 「鉄鋼材料の加工硬化特性への新たな要求と基礎研究」,"積層欠陥の第一原理計算"2011

    • Author(s)
      戸賀瀬健介
    • Publisher
      日本鉄鋼協会
    • Related Report
      2010 Annual Research Report
  • [Remarks]

    • URL

      http://ist.ksc.kwansei.ac.jp/~nishitani

    • Related Report
      2010 Annual Research Report
  • [Remarks]

    • URL

      http://ist.ksc.kwansei.ac.jp/~nishitani

    • Related Report
      2009 Annual Research Report

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Published: 2009-04-01   Modified: 2016-04-21  

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