| Budget Amount *help |
¥18,070,000 (Direct Cost: ¥13,900,000、Indirect Cost: ¥4,170,000)
Fiscal Year 2011: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000)
Fiscal Year 2010: ¥8,840,000 (Direct Cost: ¥6,800,000、Indirect Cost: ¥2,040,000)
Fiscal Year 2009: ¥7,540,000 (Direct Cost: ¥5,800,000、Indirect Cost: ¥1,740,000)
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| Research Abstract |
In order to understand the mechanism of heavy ion induced dielectric breakdown(SEGR) of Silicon Carbide(SiC) devices, the relationship between bias appied to gate oxide and charge induced in SiC MOS capacitors by heavy ions such as oxygen and nickel was revealed. By measuring the leakage current observed from gate oxide during ion irradiation, it was found that SEGR is triggered by dense ion-induced charge if the linier energy transfer(LET) of incident ions is large.
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