Mechanism of the Destruction of Oxide on Silicon Carbide due to ChargeInduced by Ion Beams
| Project/Area Number |
21360471
|
|---|
| Research Category |
Grant-in-Aid for Scientific Research (B)
|
| Allocation Type | Single-year Grants |
|---|
| Section | 一般 |
|---|
| Research Field |
Nuclear engineering
|
|---|
| Research Institution | Japan Atomic Energy Agency |
|---|
Principal Investigator |
OHSHIMA Takeshi 独立行政法人日本原子力研究開発機構, 量子ビーム応用研究部門, 研究主幹 (50354949)
|
|---|
| Co-Investigator(Kenkyū-buntansha) |
ONODA Shinobu 独立行政法人日本原子力研究開発機構, 量子ビーム応用研究部門, 研究職 (30414569)
|
|---|
| Project Period (FY) |
2009 – 2011
|
| Project Status |
Completed (Fiscal Year 2011)
|
| Budget Amount *help |
¥18,070,000 (Direct Cost: ¥13,900,000、Indirect Cost: ¥4,170,000)
Fiscal Year 2011: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000)
Fiscal Year 2010: ¥8,840,000 (Direct Cost: ¥6,800,000、Indirect Cost: ¥2,040,000)
Fiscal Year 2009: ¥7,540,000 (Direct Cost: ¥5,800,000、Indirect Cost: ¥1,740,000)
|
|---|
| Keywords | 放射線工学 / ビーム科学 / 炭化ケイ素(SiC) / MOSキャパシタ / 容量変化 / ゲート酸化膜リーク電流 / Mosキャパシタ / イオンビーム誘起過渡電流 / 界面準位 / 炭化ケイ素(Sic) / イオン照射効果 / 電荷収集 / 結晶損傷 / 界面準立 |
|---|
| Research Abstract |
In order to understand the mechanism of heavy ion induced dielectric breakdown(SEGR) of Silicon Carbide(SiC) devices, the relationship between bias appied to gate oxide and charge induced in SiC MOS capacitors by heavy ions such as oxygen and nickel was revealed. By measuring the leakage current observed from gate oxide during ion irradiation, it was found that SEGR is triggered by dense ion-induced charge if the linier energy transfer(LET) of incident ions is large.
|
Report
(4 results)
Research Products
(33 results)
