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The electron-phonon interaction resulting surface modification triggered by the low-energy highly-charged-ion

Research Project

Project/Area Number 21510108
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeSingle-year Grants
Section一般
Research Field Nanostructural science
Research InstitutionOkayama University of Science

Principal Investigator

NAKAGAWA Sachiko  岡山理科大学, 理学部, 教授 (10098585)

Co-Investigator(Kenkyū-buntansha) 森下 和功  京都大学, エネルギー理工学研究所, 准教授 (80282581)
Co-Investigator(Renkei-kenkyūsha) YAMAZAKI Yasunori  東京大学, 特任教授 (30114903)
SAITO Hiroshi  岡山理科大学, 名誉教授 (20013526)
OHISHI Masakazu  岡山理科大学, 名誉教授 (40068911)
Project Period (FY) 2009 – 2011
Project Status Completed (Fiscal Year 2011)
Budget Amount *help
¥4,680,000 (Direct Cost: ¥3,600,000、Indirect Cost: ¥1,080,000)
Fiscal Year 2011: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
Fiscal Year 2010: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
Fiscal Year 2009: ¥2,470,000 (Direct Cost: ¥1,900,000、Indirect Cost: ¥570,000)
KeywordsHCI(多価イオン) / 計算機シミュレーション / 電子・フォノン相互作用 / コヒーレントフォノン / 表面改質 / 近接場効果 / 低速イオンビーム / HOPG/ダイヤモンド炭素系 / HOPG / ダイヤモンド炭素系
Research Abstract

The low-energy highly charged ion(HCI) produces hillocks on a solid surface, which are mesa-like protrusions as the result of electronic excitation due to HCI. Our aim has been to make it clear how generally the electron-phonon interaction can explain the formation mechanism, for a wide range of target materials. The first step of synergetic reaction of target atoms may be to form the fast phonon, which is already known in semimetal and semiconductor. This is the optical phonon where intraplane motion of atoms is characteristic. The second step is the acoustic phonon caused by the entering HCI. These two types of successive phonons may produce the hillocks by a low-energy HCI, at least in the case of a semimetal.

Report

(4 results)
  • 2011 Annual Research Report   Final Research Report ( PDF )
  • 2010 Annual Research Report
  • 2009 Annual Research Report
  • Research Products

    (76 results)

All 2012 2011 2010 2009

All Journal Article (27 results) (of which Peer Reviewed: 18 results) Presentation (45 results) Book (4 results)

  • [Journal Article] Ordering effects in extreme highresolution depth profiling with MeV ion beams2012

    • Author(s)
      H. J. Whitlow and S. T. Nakagawa
    • Journal Title

      Nucl. Instr. Meth. B

      Volume: 272 Pages: 430-432

    • DOI

      10.1016/j.nimb.2011.01.116

    • Related Report
      2011 Annual Research Report 2011 Final Research Report
    • Peer Reviewed
  • [Journal Article] Coarse-grained analysis of crystalline defects caused by ion beam irradiation2011

    • Author(s)
      S. T. Nakagawa
    • Journal Title

      Elect. Eng. Jpn

      Volume: 177 Issue: 3 Pages: 54-54

    • DOI

      10.1002/eej.21151

    • URL

      http://wileyonlinelibrary.com

    • Related Report
      2011 Annual Research Report 2011 Final Research Report
    • Peer Reviewed
  • [Journal Article] An MD simulation to form an NV-N centre using N2 implantation into diamond2011

    • Author(s)
      S. T. Nakagawa, H. Nagao, and G. Betz
    • Journal Title

      Diamond and Related Mate-rials

      Volume: 20 Issue: 7 Pages: 927-930

    • DOI

      10.1016/j.diamond.2011.05.008

    • Related Report
      2011 Annual Research Report 2011 Final Research Report
    • Peer Reviewed
  • [Journal Article] Molecular Dynamic Simulation for the NV-N Center Formation by Means of N_2 Beam Implantation into a Diamond2011

    • Author(s)
      S. T. Nakagawa, H. Kanda, T. Sakai, M. Ohishi, H. Saito, S. Nakagawa, Y. Banden, and G. Betz
    • Journal Title

      Trans. Mater. Res. Soc. Jpn

      Volume: 36 Pages: 79-82

    • URL

      http://rs-j.org/home/ja/backnumber

    • Related Report
      2011 Final Research Report
    • Peer Reviewed
  • [Journal Article] Physics of amorphization2011

    • Author(s)
      S.T.Nakagawa
    • Journal Title

      11^<th> Proc.of IWJT.

      Volume: 11 Pages: 40-43

    • DOI

      10.1109/iwjt.2011.5969996

    • Related Report
      2011 Annual Research Report
  • [Journal Article] 窒素内包フラーレン中の励起状態2011

    • Author(s)
      中川幸子, 坂根弦太
    • Journal Title

      DV-Xα研究協会会報No.1&2

      Volume: 24 Pages: 242-242

    • Related Report
      2011 Annual Research Report
  • [Journal Article] The matrix effect in the excitation levels in the single atom doped fullerene2011

    • Author(s)
      S.T.Nakagawa, G.Sakane
    • Journal Title

      5^<th> Int.Workshop on Fundamental Physics Using Atom (FPUA-2011)

      Volume: 5 Pages: 93-95

    • Related Report
      2011 Annual Research Report
  • [Journal Article] Molecular Dynamic Simulation for the NV-N Center Formation by means of N2 Beam Implantation into a Diamond2011

    • Author(s)
      S.T.Nakagawa, H.Kanda, G.Betz, 他5名
    • Journal Title

      Trans.Mater.Res.Soc.Jpn.

      Volume: 36 Pages: 79-82

    • Related Report
      2010 Annual Research Report
    • Peer Reviewed
  • [Journal Article] A predictive model for the electronic stopping force for molecular dynamic simulation(I)2010

    • Author(s)
      S. T. Nakagawa and H. J. Whitlow
    • Journal Title

      Nucl. Instrum. Meth. B

      Volume: 268 Issue: 19 Pages: 3287-3290

    • DOI

      10.1016/j.nimb.2010.06.018

    • Related Report
      2011 Final Research Report
    • Peer Reviewed
  • [Journal Article] A modeling for the interaction between a cluster beam and material(in Japanese)2010

    • Author(s)
      S. T. Nakagawa
    • Journal Title

      J. Surf. Sci. Soc. Jpn

      Volume: 31 Pages: 580-586

    • URL

      http://jglobal.jst.go.jp/public/20090422/200902214491148430

    • Related Report
      2011 Final Research Report
    • Peer Reviewed
  • [Journal Article] The Straggling of Dissociation Distance in Molecular Beam Implantation2010

    • Author(s)
      S. T. Nakagawa, H. Kanda, and G. Betz
    • Journal Title

      IEEJ Transactions on Electronics, Information and Systems

      Volume: 130 Issue: 12 Pages: 2182-2187

    • DOI

      10.1541/ieejeiss.130.2182

    • NAID

      10027458294

    • ISSN
      0385-4221, 1348-8155
    • Related Report
      2011 Final Research Report
    • Peer Reviewed
  • [Journal Article] クラスタービームと固体の相互作用の計算機シミュレーション解説論文(特集:クラスタービームとその応用技術)2010

    • Author(s)
      中川幸子
    • Journal Title

      J.Surf.Sci.Soc.Jpn.

      Volume: 31 Pages: 580-586

    • Related Report
      2010 Annual Research Report
    • Peer Reviewed
  • [Journal Article] 分子ビームイオン注入に置ける飛程の横方向制御性解説論文2010

    • Author(s)
      中川幸子, 神田久生, G.Betz
    • Journal Title

      電気学会論文誌

      Volume: C130 Pages: 2182-2187

    • Related Report
      2010 Annual Research Report
    • Peer Reviewed
  • [Journal Article] A predictive model for the electronic stopping force for molecular dynamic simulation (I)2010

    • Author(s)
      S.T.Nakagawa, H.J.Whitlow
    • Journal Title

      Nucl.Instr.Meth.B

      Volume: 268 Pages: 3287-3290

    • Related Report
      2010 Annual Research Report
    • Peer Reviewed
  • [Journal Article] シミュレーションからみたイオン注入技術の信頼性2010

    • Author(s)
      中川幸子
    • Journal Title

      科学と人間シンポジウム論文集

      Volume: 3 Pages: 23-25

    • Related Report
      2010 Annual Research Report
  • [Journal Article] 注入温度の違いによる置換と結晶性の評価2010

    • Author(s)
      長尾初季、中川幸子
    • Journal Title

      「智のシンポジウム-文明・文化と科学技術」論文集

      Volume: 3 Pages: 9-12

    • Related Report
      2010 Annual Research Report
  • [Journal Article] クラスターによるアニーリングの違い2010

    • Author(s)
      小山真弘、中川幸子
    • Journal Title

      「智のシンポジウム-文明・文化と科学技術」論文集

      Volume: 3 Pages: 15-19

    • Related Report
      2010 Annual Research Report
  • [Journal Article] Interactions of the cluster beams with solid surfaces2009

    • Author(s)
      S. T. Nakagawa
    • Journal Title

      J. Vac. Sci. Soc. Jpn

      Volume: 52 Pages: 224-230

    • URL

      http://dx.doi.org10.3131/jvsj2.52.224

    • Related Report
      2011 Final Research Report
    • Peer Reviewed
  • [Journal Article] What is the significance of Nitrogen-Vacancy centers in the doping into diamond?2009

    • Author(s)
      S. T. Nakagawa, A. Okamoto, M. Ohishi, H. Saito, H. Hashimoto, and G. Betz
    • Journal Title

      Nucl. Instr. Meth. B

      Volume: 267 Issue: 8-9 Pages: 1226-1228

    • DOI

      10.1016/j.nimb.2009.01.020

    • Related Report
      2011 Final Research Report
    • Peer Reviewed
  • [Journal Article] Lithography with MeV energy ions for biomedical applications : accelera-tor considerations2009

    • Author(s)
      S. Sangyuenyongpipat, H. J. Whitlow, S. T. Nakagawa, and E. Yoshida
    • Journal Title

      Proc. CAARI 2008, AIP Conf. Proc

      Volume: 1099 Pages: 282-286

    • DOI

      10.1063/1.3120033

    • Related Report
      2011 Final Research Report
    • Peer Reviewed
  • [Journal Article] What is the significance of Nitrogen-Vacancy centers in the doping intodiamond?2009

    • Author(s)
      中川幸子, 他5名
    • Journal Title

      Nucl.Instr.Meth.B 267

      Pages: 1226-1228

    • Related Report
      2009 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Interactions of the cluster beams with solid surfaces(Review論文)2009

    • Author(s)
      中川幸子
    • Journal Title

      J.Vac.Sci.Soc.Jpn 52

      Pages: 224-230

    • Related Report
      2009 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Lithography with MeV energy ions for biomedical applications : accelerator considerations2009

    • Author(s)
      S.Sangyuenyongpipat, S.T.Nakagawa, 他3名
    • Journal Title

      American Institute of Physics Conf.Proc. 1099

      Pages: 282-286

    • Related Report
      2009 Annual Research Report
    • Peer Reviewed
  • [Journal Article] イオンビームに誘起される格子欠陥の粗視化解析(学会誌特集)2009

    • Author(s)
      中川幸子
    • Journal Title

      電気学会論文誌C(特集[量子ビームによるナノバイオ科学と基盤技術]). C129

      Pages: 238-244

    • Related Report
      2009 Annual Research Report
    • Peer Reviewed
  • [Journal Article] 分子動力学法による炭素薄膜中の電子的阻止能評価と温度効果2009

    • Author(s)
      中川幸子, 酒井裕也
    • Journal Title

      Proc.of 11th Symposium on Accelerator and Related Technology for Application 11

      Pages: 55-56

    • Related Report
      2009 Annual Research Report
  • [Journal Article] 分子ビームによる複合欠陥生成のMDシミュレーション2009

    • Author(s)
      堺達也, 中川幸子
    • Journal Title

      Proc.of 2nd Symposium on Wisdom 2

      Pages: 17-18

    • Related Report
      2009 Annual Research Report
  • [Journal Article] 第一原理計算によるBn+クラスターの解離・化合反応における衝突エネルギー依存性2009

    • Author(s)
      市丸和也, 中川幸子
    • Journal Title

      Proc.of 2nd Symposium on Wisdom. 2

      Pages: 19-22

    • Related Report
      2009 Annual Research Report
  • [Presentation] 低速高電離イオンと固体の相互作用における局所フォノン励起2012

    • Author(s)
      中川幸子, ほか
    • Organizer
      電気化学会
    • Place of Presentation
      アクトシティ浜松(静岡県)
    • Year and Date
      2012-03-29
    • Related Report
      2011 Annual Research Report
  • [Presentation] 内包フラーレンの励起におけるマトリックス効果2012

    • Author(s)
      中川幸子, 坂根弦太
    • Organizer
      物理学会領域10、格子欠陥分科
    • Place of Presentation
      関西学院大学(兵庫県)
    • Year and Date
      2012-03-25
    • Related Report
      2011 Annual Research Report
  • [Presentation] イオンビーム照射後の結晶にみられる局所フォノン励起2012

    • Author(s)
      中川幸子
    • Organizer
      電気学会
    • Place of Presentation
      広島工業大学(広島県)
    • Year and Date
      2012-03-23
    • Related Report
      2011 Annual Research Report
  • [Presentation] The mesoscopic response of a crystal after ion beam irradiation2011

    • Author(s)
      S.T.Nakagawa
    • Organizer
      Low Carbon Earth Summit (LCES-2011)
    • Place of Presentation
      Dalian, China(招待講演)
    • Year and Date
      2011-10-26
    • Related Report
      2011 Annual Research Report
  • [Presentation] The mesoscopic re-sponse of a crystal after ion beam irradiation2011

    • Author(s)
      S. T. Nakagawa
    • Organizer
      Low Carbon Earth Summit(LCES-2011)
    • Place of Presentation
      Dalian, China
    • Year and Date
      2011-10-21
    • Related Report
      2011 Final Research Report
  • [Presentation] The matrix effect in the excitation levels in the single atom doped fullerene2011

    • Author(s)
      S.T.Nakagawa, G.Sakane
    • Organizer
      5^<th> Fundamental Physics Using Atom
    • Place of Presentation
      Okayama, Japan
    • Year and Date
      2011-10-09
    • Related Report
      2011 Annual Research Report
  • [Presentation] The matrix effect in the excitation levels in the single atom doped fullerene2011

    • Author(s)
      S.T.Nakagawa, G.Sakane
    • Organizer
      5^<th> Fundamental Physics Using Atom (FPUA-2011)
    • Place of Presentation
      Okayama, Japan
    • Year and Date
      2011-10-08
    • Related Report
      2011 Annual Research Report
  • [Presentation] イオンビーム照射後の結晶性の振動的回復2011

    • Author(s)
      中川幸子
    • Organizer
      物理学会領域10、格子欠陥分科
    • Place of Presentation
      富山大学(富山県)
    • Year and Date
      2011-09-23
    • Related Report
      2011 Annual Research Report
  • [Presentation] フラーレン中の窒素原子の励起状態についての分子軌道計算-II2011

    • Author(s)
      中川幸子、坂根弦太
    • Organizer
      物理学会領域10、格子欠陥分科
    • Place of Presentation
      富山大学(富山県)
    • Year and Date
      2011-09-23
    • Related Report
      2011 Annual Research Report
  • [Presentation] 低速高電離イオンによるナノヒッロクの形成2011

    • Author(s)
      中川幸子, ほか
    • Organizer
      物理学会領域1、放射線分科
    • Place of Presentation
      富山大学(富山県)
    • Year and Date
      2011-09-21
    • Related Report
      2011 Annual Research Report
  • [Presentation] A computer simulation of post-annealing2011

    • Author(s)
      S. T. Nakagawa
    • Organizer
      Int. Workshop on Ion Beam Application of Functional Materials
    • Place of Presentation
      Shandong, China
    • Year and Date
      2011-08-20
    • Related Report
      2011 Final Research Report
  • [Presentation] A computer simulation of post-annealing2011

    • Author(s)
      S.T.Nakagawa
    • Organizer
      Int.Workshop on Ion Beam
    • Place of Presentation
      Shandong, China(招待講演)
    • Year and Date
      2011-08-20
    • Related Report
      2011 Annual Research Report
  • [Presentation] An electron-phonon coupling model for nanohillock formation in HOPG due to low-energy highly charged ions2011

    • Author(s)
      S. T. Nakagawa, H. J. Whitlow, K. Ohashi, Y. Mizuno, and G. Betz
    • Organizer
      Int. Conf. Radiation Effect in Insulator
    • Place of Presentation
      Beijing, China
    • Year and Date
      2011-08-17
    • Related Report
      2011 Final Research Report
  • [Presentation] 窒素内包フラーレン中の励起状態2011

    • Author(s)
      中川幸子, 坂根弦太
    • Organizer
      DV-Xα研究会
    • Place of Presentation
      静岡大学(静岡県)
    • Year and Date
      2011-08-08
    • Related Report
      2011 Annual Research Report
  • [Presentation] 低速高電離イオンとグラファイト表面との相互作用2011

    • Author(s)
      中川幸子, ほか
    • Organizer
      中四国物理学会
    • Place of Presentation
      鳥取大学(鳥取県)
    • Year and Date
      2011-07-30
    • Related Report
      2011 Annual Research Report
  • [Presentation] アモルファス状態からの結晶性回復アニーリングの動的解析2011

    • Author(s)
      中川幸子
    • Organizer
      中四国物理学会
    • Place of Presentation
      鳥取大学(鳥取県)
    • Year and Date
      2011-07-30
    • Related Report
      2011 Annual Research Report
  • [Presentation] Physics of amorphiza-tion2011

    • Author(s)
      S. T. Nakagawa
    • Organizer
      11^<th> Int. Workshop on junction Technology
    • Place of Presentation
      Kyoto, Japan
    • Year and Date
      2011-06-09
    • Related Report
      2011 Final Research Report
  • [Presentation] Physics of amorphization2011

    • Author(s)
      S.T.Nakagawa
    • Organizer
      11^<th> Int.Work.Junction Tech.(IWJT-2011)
    • Place of Presentation
      Kyoto, Japan(招待講演)
    • Year and Date
      2011-06-09
    • Related Report
      2011 Annual Research Report
  • [Presentation] フラーレン中の窒素原子の励起状態についての分子軌道計算2011

    • Author(s)
      中川幸子, 坂根弦太
    • Organizer
      日本物理学会 年次大会
    • Place of Presentation
      新潟大学(五十嵐キャンパス)(口頭)
    • Year and Date
      2011-03-27
    • Related Report
      2010 Annual Research Report
  • [Presentation] 低エネルギー高電離イオンによる表面ヒロック形成機構の解明2011

    • Author(s)
      中川幸子, H.J.Whitlow, G.Betz
    • Organizer
      日本電気学会 全国大会
    • Place of Presentation
      大阪大学(吹田キャンパス)(口頭)
    • Year and Date
      2011-03-17
    • Related Report
      2010 Annual Research Report
  • [Presentation] クラスタービームによるアニーリング効果の検証2010

    • Author(s)
      小山真弘、中川幸子
    • Organizer
      日本物理学会 秋の大会
    • Place of Presentation
      大府大(中百舌鳥キャンパス)(口頭)
    • Year and Date
      2010-09-26
    • Related Report
      2010 Annual Research Report
  • [Presentation] 分子ビームの固体内原子衝突(II)2010

    • Author(s)
      長尾初季、神田、Betz、中川幸子
    • Organizer
      日本物理学会 秋の大会
    • Place of Presentation
      大府大(中百舌鳥キャンパス)(口頭)
    • Year and Date
      2010-09-24
    • Related Report
      2010 Annual Research Report
  • [Presentation] An MD simulation to form an NV-N centre using N_2 implantation into diamond (Poster)2010

    • Author(s)
      S.T.Nakagawa, H.Nagao, G.Betz
    • Organizer
      21^<st> Int.Conf.Diamond and Related..2010 (No.P087)
    • Place of Presentation
      Budapest (Hungary)
    • Year and Date
      2010-09-05
    • Related Report
      2010 Annual Research Report
  • [Presentation] Formation mechanisms of nanohillocks by highly charged ion irradiation of surface2010

    • Author(s)
      S. T. Nakagawa, M. Takeda, and Y. Yamazaki
    • Organizer
      17^<th> Int. Conf. Ion Beam Modification
    • Place of Presentation
      Montreal, Canada
    • Year and Date
      2010-08-23
    • Related Report
      2011 Final Research Report
  • [Presentation] Can a cluster beam reduce the necessary annealing temperature? (Poster)2010

    • Author(s)
      S.T.Nakagawa, M.Koyama
    • Organizer
      17^<th> Int.Conf.Ion Beam Mod.(IBMM)(No.413)
    • Place of Presentation
      Montreal (Canada)
    • Year and Date
      2010-08-23
    • Related Report
      2010 Annual Research Report
  • [Presentation] Formation mechanisms of nanohillocks by highly charged ion irradiation of surf.(Poster)2010

    • Author(s)
      S.T NAKAGAWA, (他2名)
    • Organizer
      17^<th> Int.Conf.Ion Beam Mod.(IBMM)(No.499)
    • Place of Presentation
      Montreal (Canada)
    • Year and Date
      2010-08-23
    • Related Report
      2010 Annual Research Report
  • [Presentation] Ordering effects in extreme high-resolution depth profiling with MeV ion beams(Poster)2010

    • Author(s)
      H.J.Whitlow, S.T.Nakagawa
    • Organizer
      17^<th> Int.Conf.Ion Beam Mod.(IBMM)(No.426)
    • Place of Presentation
      Montreal (Canada)
    • Year and Date
      2010-08-23
    • Related Report
      2010 Annual Research Report
  • [Presentation] クラスタービームによるアニーリング効果2010

    • Author(s)
      小山真弘、中川幸子
    • Organizer
      物理学会中四国支部例会
    • Place of Presentation
      高知大学(朝倉キャンパス)(口頭)
    • Year and Date
      2010-07-31
    • Related Report
      2010 Annual Research Report
  • [Presentation] 分子ビームの固体内原子衝突2010

    • Author(s)
      長尾初季, 神田, G.Betz, 中川幸子
    • Organizer
      物理学会中四国支部例会
    • Place of Presentation
      高知大学(朝倉キャンパス)(口頭)
    • Year and Date
      2010-07-31
    • Related Report
      2010 Annual Research Report
  • [Presentation] 分子動力学法による炭素薄膜中の電子的阻止能評価と温度効果(口頭)2010

    • Author(s)
      中川幸子
    • Organizer
      第11回 応用加速器・関連技術研究シンポジウム
    • Place of Presentation
      東工大(大岡山キャンパス)
    • Year and Date
      2010-06-12
    • Related Report
      2009 Annual Research Report
  • [Presentation] シミュレーションから見たイオン注入技術の信頼性(口頭)2010

    • Author(s)
      中川幸子
    • Organizer
      第3回 科学と人間シンポジウム
    • Place of Presentation
      東海大学(代々木校舎)
    • Year and Date
      2010-03-30
    • Related Report
      2009 Annual Research Report
  • [Presentation] GeVイオンで拓く物質科学理論構築とシミュレーション全体のアウトライン(口頭)2010

    • Author(s)
      中川幸子
    • Organizer
      デジタル加速器ユーザーズフォーラム(10-3-21)
    • Place of Presentation
      会議場(岡山市内)
    • Year and Date
      2010-03-21
    • Related Report
      2009 Annual Research Report
  • [Presentation] 分子ビーム注入における飛程の横方向依存性(口頭)2010

    • Author(s)
      堺達也, 中川幸子
    • Organizer
      日本物理学会 年次大会
    • Place of Presentation
      岡山大学(津島キャンパス)
    • Year and Date
      2010-03-20
    • Related Report
      2009 Annual Research Report
  • [Presentation] Ordering effects in extreme high-resolution depth profiling with MeV ionbeams(Oral)2009

    • Author(s)
      H.J.Whitlow, S.T.Nakagawa
    • Organizer
      5^<th> Int.Workshop.of High Resolution Depth Profiling(HRDP 2009)
    • Place of Presentation
      Kyoto(Japan)
    • Year and Date
      2009-11-19
    • Related Report
      2009 Annual Research Report
  • [Presentation] A Molecular Dynamic Simulation to study the formation of NV-N center by N Beam Implantation into Diamond(Poster)2009

    • Author(s)
      中川幸子, 他2名
    • Organizer
      5^<th> Int.Workshop.of High Resolution Depth Profiling(HRDP 2009)
    • Place of Presentation
      Kyoto(Japan)
    • Year and Date
      2009-11-17
    • Related Report
      2009 Annual Research Report
  • [Presentation] The electronic stopping force of a crystal for a cluster beam impact using molecular dynamic simulation(Poster)2009

    • Author(s)
      中川幸子
    • Organizer
      5^<th> Int.Workshop.of High Resolution Depth Profiling(HRDP 2009)
    • Place of Presentation
      Kyoto(Japan)
    • Year and Date
      2009-11-17
    • Related Report
      2009 Annual Research Report
  • [Presentation] GeVイオンで拓く物質科学高速イオンと物質の相互作用の体系化(口頭)2009

    • Author(s)
      中川幸子
    • Organizer
      デジタル加速器ユーザーズフォーラム(09-11-21)
    • Place of Presentation
      高エネ研(つくば)
    • Year and Date
      2009-11-11
    • Related Report
      2009 Annual Research Report
  • [Presentation] 分子ビーム注入による複合欠陥生成のMDシミュレーション(口頭)2009

    • Author(s)
      堺達也, 中川幸子
    • Organizer
      日本物理学会 秋の大会
    • Place of Presentation
      熊本大学(黒髪キャンパス)
    • Year and Date
      2009-09-26
    • Related Report
      2009 Annual Research Report
  • [Presentation] 分子動力学法による電子的阻止能:結晶性の効果(口頭)2009

    • Author(s)
      酒井裕也, 中川幸子
    • Organizer
      日本物理学会 秋の大会
    • Place of Presentation
      熊本大学(黒髪キャンパス)
    • Year and Date
      2009-09-25
    • Related Report
      2009 Annual Research Report
  • [Presentation] A Molecular Dynamic Simulation to Study the Formation of NV-N center by N_2 Beam Implantation into a Diamond(Oral)2009

    • Author(s)
      中川幸子, 他7名
    • Organizer
      16^<th> Int.Conf.of Surface Modification of Materials by Ion Beams(SMMIB 2009)
    • Place of Presentation
      産総研臨海副都心センター(Japan)
    • Year and Date
      2009-09-18
    • Related Report
      2009 Annual Research Report
  • [Presentation] The significance of local electron density distribution in the electronic stopping force for molecular dynamic simulation(Poster)2009

    • Author(s)
      S.T.Nakagawa, Y.Sakai, H.J.Whitlow
    • Organizer
      Radiation Effects in Insulators(REI 2009)
    • Place of Presentation
      Padova Univ.(Italy)
    • Year and Date
      2009-08-31
    • Related Report
      2009 Annual Research Report
  • [Presentation] 分子結合ビームによる複合欠陥生成のMDシミュレーション(2)(口頭)2009

    • Author(s)
      堺達也, 中川幸子
    • Organizer
      日本物理学会 中国四国支部 例会
    • Place of Presentation
      広島大学(西条キャンパス)
    • Year and Date
      2009-08-01
    • Related Report
      2009 Annual Research Report
  • [Presentation] 分子動力学法における局所電荷密度法と有効電荷法の評価)(口頭)2009

    • Author(s)
      中川幸子
    • Organizer
      日本物理学会 中国四国支部 例会
    • Place of Presentation
      広島大学(西条キャンパス)
    • Year and Date
      2009-08-01
    • Related Report
      2009 Annual Research Report
  • [Presentation] The collision dynamics of a slow B_n^+ cluster with O_2 Beam ; based on ab-initio molecular dynamics simulation(Poster)2009

    • Author(s)
      Miyauchi, S.T.Nakagawa, 他5名
    • Organizer
      26^<th> Int.Conf.on Photonic, Electronic, and Atomic Collisions(ICPEAC)
    • Place of Presentation
      Michigan(USA)
    • Year and Date
      2009-07-22
    • Related Report
      2009 Annual Research Report
  • [Presentation] GeVイオンで拓く物質科学(口頭)2009

    • Author(s)
      中川幸子
    • Organizer
      デジタル加速器ユーザーズフォーラム(09-04-15)
    • Place of Presentation
      岡山理大(岡山キャンパス)
    • Year and Date
      2009-04-15
    • Related Report
      2009 Annual Research Report
  • [Book] Specific defect induced by a molecular beam implant-tation into a diamond, in Diamond : Properties, Production and Uses2012

    • Author(s)
      S. T. Nakagawa
    • Publisher
      NOVA Publisher, New York
    • Related Report
      2011 Final Research Report
  • [Book] Diamond : Properties, Production and Uses ; (Chapter 8)2012

    • Author(s)
      S.T.Nakagawa
    • Publisher
      NOVA Publisher, New York
    • Related Report
      2011 Annual Research Report
  • [Book] Characterizing Nanoscale crystal perfection by crystal mapping, in Ion beams in Nanoscience and Technology2009

    • Author(s)
      S. T. Nakagawa
    • Publisher
      Springer-Verlag, Berlin
    • Related Report
      2011 Final Research Report
  • [Book] Ion beams in Nanoscience and Technology(9章、分担執筆)2009

    • Author(s)
      S.T.Nakagawa
    • Total Pages
      457
    • Publisher
      Springer-Verlag, Berlin
    • Related Report
      2009 Annual Research Report

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Published: 2009-04-01   Modified: 2016-04-21  

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