| Project/Area Number |
21510111
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Nanomaterials/Nanobioscience
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| Research Institution | Yamagata University |
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Principal Investigator |
HIROSE Fumihiko 山形大学, 大学院・理工学研究科, 教授 (50372339)
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| Co-Investigator(Kenkyū-buntansha) |
NARITA Yuzuru 山形大学, 大学院・理工学研究科, 助教 (30396543)
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| Co-Investigator(Renkei-kenkyūsha) |
KIMURA Yasuo 東北大学, 電気通信研究所, 准教授 (40312673)
NIWANO Michio 東北大学, 電気通信研究所, 教授 (20134075)
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| Project Period (FY) |
2009 – 2011
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| Project Status |
Completed (Fiscal Year 2011)
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| Budget Amount *help |
¥4,680,000 (Direct Cost: ¥3,600,000、Indirect Cost: ¥1,080,000)
Fiscal Year 2011: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
Fiscal Year 2010: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2009: ¥2,210,000 (Direct Cost: ¥1,700,000、Indirect Cost: ¥510,000)
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| Keywords | 原子層堆積 / 酸化膜 / 堆積 / MOS / 赤外吸収分光 / 吸着 / 絶縁 / C-V / 励起 / 絶縁膜 / 酸化 / ナノ構造形成・制御 |
|---|
| Research Abstract |
To realize next-generation semiconductor devices with an atomic scale, we developed a room-temperature (RT) atomic layer deposition of SiO2 that might allow the minimum thermal budget in the LSI fabrication. In the course of the research, we directly observed fundamental reactions of source gas adsorption and oxidation. It was found that the hydroxylation process is rate-limiting in ALD at RT. To enhance it, we newly developed a plasma excited water vapor source and demonstrated that it is effective in promoting SiO2 deposition at RT. We demonstrated the RT fabrication of Ge MOS devices, where the process temperature has been desired to be decreased to RT.
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