Fabrication and property of CNT/SiC heterojunction formed by surface decomposition of SiC
| Project/Area Number |
21510119
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Nanomaterials/Nanobioscience
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| Research Institution | Meijo University |
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Principal Investigator |
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| Co-Investigator(Kenkyū-buntansha) |
NARITSUKA Shigeya 名城大学, 理工学部, 教授 (80282680)
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| Project Period (FY) |
2009 – 2012
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| Project Status |
Completed (Fiscal Year 2012)
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| Budget Amount *help |
¥4,940,000 (Direct Cost: ¥3,800,000、Indirect Cost: ¥1,140,000)
Fiscal Year 2012: ¥780,000 (Direct Cost: ¥600,000、Indirect Cost: ¥180,000)
Fiscal Year 2011: ¥650,000 (Direct Cost: ¥500,000、Indirect Cost: ¥150,000)
Fiscal Year 2010: ¥650,000 (Direct Cost: ¥500,000、Indirect Cost: ¥150,000)
Fiscal Year 2009: ¥2,860,000 (Direct Cost: ¥2,200,000、Indirect Cost: ¥660,000)
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| Keywords | カーボンナノチューブ / SiC / ヘテロ接合 / 光電子分光 / X 線吸収分光 / 表面分解法 / 電気的特性 / 表面・界面 / X線吸収分光 |
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| Research Abstract |
Energy band alignment at the interface between carbon nanotubes (CNTs) and n-type 6H-SiC formed by the surface decomposition of SiC was investigated using high-resolution photoelectron spectroscopy (PES). PES results revealed that a Schottky barrier was formed at the interface and the barrier height was 1.38 eV. Current-voltage measurements of the interface showed rectifying behavior, which was consistent with the PES results. In addition, to clarify the formation process of CNTs, X-ray absorption fine structure (XAFS) measurements were carried out.
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Report
(5 results)
Research Products
(107 results)
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[Presentation] Ishii, T. Ohta, NEXAFS study on carbon nanotube growth by surface decomposition of SiC2012
Author(s)
T. Maruyama, S. Sakakibara, Y. Ishiguro, S.Naritsuka, K. Amemiya, H.
Organizer
The Annual World Conference on Carbon (Carbon 2012), 497
Place of Presentation
Auditorium Maximum, Krakow, Porland
Year and Date
2012-06-18
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