structural control of nano-materials by pulsed excitation processes
Project/Area Number |
21510120
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Research Category |
Grant-in-Aid for Scientific Research (C)
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Allocation Type | Single-year Grants |
Section | 一般 |
Research Field |
Nanomaterials/Nanobioscience
|
Research Institution | Konan University |
Principal Investigator |
UMEZU Ikurou 甲南大学, 理工学部, 教授 (30203582)
|
Co-Investigator(Kenkyū-buntansha) |
YOSHIDA Takehito 阿南工業高等専門学校, 教授 (20370033)
SUGIMURA Akira 甲南大学, 理工学部, 教授 (30278791)
SAKAMOTO Naomichi いわき明星大学, 科学技術学部, 助教 (70275650)
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Project Period (FY) |
2009 – 2011
|
Project Status |
Completed (Fiscal Year 2011)
|
Budget Amount *help |
¥4,550,000 (Direct Cost: ¥3,500,000、Indirect Cost: ¥1,050,000)
Fiscal Year 2011: ¥910,000 (Direct Cost: ¥700,000、Indirect Cost: ¥210,000)
Fiscal Year 2010: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
Fiscal Year 2009: ¥2,600,000 (Direct Cost: ¥2,000,000、Indirect Cost: ¥600,000)
|
Keywords | レーザーアブレーション / ナノ結晶 / 非平衡プロセス / レーザープロセッシング / 結晶成長 / プルーム |
Research Abstract |
Si and Ge targets are irradiated by pulsed lasers, and the plumes during pulsed laser ablation was collided head-on to prepare hybrid-nanoparticles. The effect of collision was apparent around 300 Pa and was little when gas pressure is much lower or higher. Expansion of plume is molecular flow like at lower gas pressure and is confined at higher background gas pressure. The deposits are nanoparticles of Si and Ge alloy.
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Report
(4 results)
Research Products
(108 results)
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[Journal Article] Preparation of single crystalline silicon layer supersaturated with sulfur by pulsed YAG laser melting method2011
Author(s)
S.Nakagawa, M.Naito, A.Kohno, T.Yoshida, A.Sugimura, J.M.Warrender, J.Williams, S.Charnvanichborikarn, M.J.Aziz, I.Umezu
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Journal Title
Mem.Konan Univ., Sci.& Eng.Ser.
Volume: 57
Pages: 29-34
NAID
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[Presentation] Au25超クラスターからの発光機構2011
Author(s)
坂永勇, 松末和憲, 稲田貢, 齊藤正, 川崎英也, 岩崎泰彦, 山田俊樹, 梅津郁朗, 杉村陽
Organizer
応用物理学関係連合講演会
Place of Presentation
神奈川工科大学
Year and Date
2011-03-26
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[Presentation] Strong mid-infrared optical absorption emerged by supersaturated sulfur doping in silicon wafer2010
Author(s)
I.Umezu, A.Kohno, J.M.Warrender, Y.Takatori, Y.Hirao, S.Nakagawa, A.Sugimura, S.Charnvanichborikarn, J.S.Williams, M.J.Aziz
Organizer
30th International Conference on the Physics of Semiconductors
Place of Presentation
Seoul, Korea
Year and Date
2010-07-29
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[Presentation] 硫黄を過飽和ドープしたSi単結晶の光電気伝導特性2009
Author(s)
高取裕樹, 平田圭, 香野淳, Warrender J. M., Williams J. S., Charnvanichborikarn S., 杉村陽, 梅津郁朗, Aziz M. J
Organizer
応用物理学会
Place of Presentation
富山大学
Year and Date
2009-09-09
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[Presentation] 硫黄を過飽和ドープしたSi単結晶の光電気伝導特性2009
Author(s)
高取裕樹, 平田圭, 香野淳, Warrender J.M., Williams J.S., Charnvanichborikarn S., 杉村陽, 梅津郁朗, Aziz M.J
Organizer
2009年 秋季第70回応用物理学会学術講演会
Place of Presentation
富山大学
Year and Date
2009-09-09
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[Presentation] Siに過飽和ドープされた硫黄の化学結合状態解析2009
Author(s)
香野淳, 岡島敏浩, Supakit Charnvanichborikarn, Jeffrey Warrender, James Williams, 梅津郁朗, Michael Aziz
Organizer
2009年 春季第56回応用物理学関係連合講演会
Place of Presentation
筑波大学
Year and Date
2009-04-02
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