| Budget Amount *help |
¥4,290,000 (Direct Cost: ¥3,300,000、Indirect Cost: ¥990,000)
Fiscal Year 2011: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
Fiscal Year 2010: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000)
Fiscal Year 2009: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
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| Research Abstract |
We developed a radiation detector using new generation compound semiconductor such as gallium nitride (GaN) and zinc oxide (ZnO). We fabricated the diodes with these materials and investigated the electrical properties and the performance in detection of incident particles. As a result, we succeeded in developing sensors with a high sensitivity for .-ray and X-ray. In addition, we irradiated the diodes with high energy proton beam, and investigated the effects on their electrical properties. We found that the electrical properties of the diodes did not change significantly under fluences up to 10^<15> p/cm^2. The result obtained in this study suggests the radiation hardness of these materials.
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