| Project/Area Number |
21540322
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Condensed matter physics I
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| Research Institution | Nara Institute of Science and Technology |
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Principal Investigator |
HATTORI Ken 奈良先端科学技術大学院大学, 物質創成科学研究科, 准教授 (00222216)
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| Research Collaborator |
DAIMON Hiroshi 奈良先端科学技術大学院大学, 物質創成科学研究科, 教授
UEDA Kazuyuki 豊田工業大学, 名誉教授
YONEI Hitoshi 奈良先端科学技術大学院大学, 物質創成科学研究科, 博士課程前期課程
TACHIBANA Kazuya 奈良先端科学技術大学院大学, 物質創成科学研究科, 博士課程前期課程
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| Project Period (FY) |
2009 – 2011
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| Project Status |
Completed (Fiscal Year 2011)
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| Budget Amount *help |
¥4,420,000 (Direct Cost: ¥3,400,000、Indirect Cost: ¥1,020,000)
Fiscal Year 2011: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
Fiscal Year 2010: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2009: ¥1,950,000 (Direct Cost: ¥1,500,000、Indirect Cost: ¥450,000)
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| Keywords | 走査トンネル顕微鏡 / へき開法 / 断面 / シリコン / 界面構造 / へき開 / 薄膜 / シリコン表面 |
|---|
| Research Abstract |
We have developed a new cleaving method to observe cross-sectional structures of interface regions including thin film systems grown on silicon-wafer surfaces using scanning tunneling microscope. This method is much easier than the previous ones and allows to prepare wide and flat cleaved surfaces. We cleaved a silicon wafer with the metal-oxide-semiconductor structure in vacuum by the method, and microscopically observed the interface region. We succeeded to identify the metal and semiconductor cross-sectional regions combined with the scanning tunneling spectroscopy.
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