Characterization of crystal defects in organic semiconductors for progress in device performance
| Project/Area Number |
21560005
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | Iwate University |
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Principal Investigator |
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| Co-Investigator(Kenkyū-buntansha) |
HOSOKAI Takuya 岩手大学, 工学部, 助教 (90613513)
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| Project Period (FY) |
2009 – 2011
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| Project Status |
Completed (Fiscal Year 2011)
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| Budget Amount *help |
¥4,810,000 (Direct Cost: ¥3,700,000、Indirect Cost: ¥1,110,000)
Fiscal Year 2011: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
Fiscal Year 2010: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2009: ¥2,470,000 (Direct Cost: ¥1,900,000、Indirect Cost: ¥570,000)
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| Keywords | 有機半導体 / 結晶成長 / X線回折 / GIXD / 有機トランジスタ / 有機薄膜 |
|---|
| Research Abstract |
The characterization of structures and device properties was studied on organic semiconducting thin films for the purpose of controlling the crystal growth and of elucidating the relationship between crystal defects and transport properties in organic thin-film transistors. Two-dimensional grazing incidence X-ray diffraction (2D-GIXD) was successfully obtained for the vapor deposited pentacene thin-films and the solution-grown TIPS-pentane films. As to the thin film growth of pentacene, thickness-dependent structural change was clearly observed in a real-time observation, and the structural change is significantly affected by exposing to air. On the other hand, large single crystals of TIPS-pentane were grown from solution phase under high magnetic filed. The 2D-GIXD patterns of solution-grown TIPS-pentane were prudently analyzed, and hole mobility in a thin film transistor based was measured and discussed.
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Report
(4 results)
Research Products
(62 results)
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[Journal Article] Towards n-channel organic thin film transistors based on a distyryl-bithiophene derivative2012
Author(s)
Y. Didane, R.P. Ortiz, J. Zhang, K. Aosawa, T. Tanisawa, H. Aboubakr, F. Fages, J. Ackermann, N. Yoshimoto, H Brisset, C. Videlot-Ackermann
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Journal Title
Tetrahedron
Volume: 68
Pages: 4664-4671
Related Report
Peer Reviewed
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[Journal Article] Towards solution-processed ambipolar organic thin film transistors based on, hexyl-distyryl-bithiophene (DH-DS2T) and a fluorocarbon-substituted dicyanoperylene (PDIF-CN2)2012
Author(s)
S. Nenon, T. Watanabe, H. Brisset, Z. Chen, J. Ackermann, F. Fages, S. Bernardini, M. Bendahan, K. Aguir, N. Yoshimoto, C. Videlot-Ackerman. J. Optoelectron
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Journal Title
Adv. Mater.
Volume: 14
Pages: 131-135
Related Report
Peer Reviewed
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[Journal Article] Investigation of solution-processed organic thin film transistors based on-hexyl-distyryl-bithiophene (DH-DS2T) : growth and transport properties2010
Author(s)
Y. Didane, A. K. Diallo, T. Fiorido, A. Suzuki, N. Yoshimoto, S. Bernardini, J. Ackermann, F. Fages, H. Brisset, M. Bendahan, K. Aguir, _C. Videlot-Ackermann J. Optoelectron
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Journal Title
Adv. Mater
Volume: vol.12, iss.7
Pages: 1546-1551
Related Report
Peer Reviewed
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[Journal Article] Comparison of p-channel transistors based on α,ω-hexyl-distyryl-bithiophene prepared using various film deposition methods2010
Author(s)
Y. Didane, C. Martini, M. Barret, S. Sanaur, P. Collot, J. Ackermann, F. Fages, A. Suzuki, N. Yoshimoto, H. Brisset, C. Videlot-Ackermann
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Journal Title
Thin Solid Films
Volume: 518
Pages: 5311-5320
Related Report
Peer Reviewed
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