Observation and control of heteroepitaxy on Si substrate by in situ X-ray diffraction
| Project/Area Number |
21560007
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | Tohoku University |
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Principal Investigator |
HANADA Takashi 東北大学, 金属材料研究所, 助教 (80211481)
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| Project Period (FY) |
2009 – 2011
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| Project Status |
Completed (Fiscal Year 2011)
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| Budget Amount *help |
¥5,070,000 (Direct Cost: ¥3,900,000、Indirect Cost: ¥1,170,000)
Fiscal Year 2011: ¥650,000 (Direct Cost: ¥500,000、Indirect Cost: ¥150,000)
Fiscal Year 2010: ¥650,000 (Direct Cost: ¥500,000、Indirect Cost: ¥150,000)
Fiscal Year 2009: ¥3,770,000 (Direct Cost: ¥2,900,000、Indirect Cost: ¥870,000)
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| Keywords | エピタキシャル成長 / X線回折 / 鉄シリサイド / 薄膜 / 構造転移 / エピタキシャル |
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| Research Abstract |
Initial stages of reactive deposition epitaxy of FeSi2 on Si(001)were observed by in situ X-ray diffraction. At 450℃, nitially nano-crystallites of α-FeSi2 high-temperature phase are formed. With increasing thickness of the deposited Fe, the α-FeSi2 crystallites gradually disappear and β-FeSi2, which is the stable phase at the growth temperature, supersedes them completely. The α-axis of the β-FeSi2 film aligns to the Si[001] axis during annealing up to 900℃.
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Report
(4 results)
Research Products
(5 results)
