Observation and control of heteroepitaxy on Si substrate by in situ X-ray diffraction

• Project/Area Number: 21560007
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Applied materials science/Crystal engineering
• Research Institution: Tohoku University
• Principal Investigator: HANADA Takashi 東北大学, 金属材料研究所, 助教 (80211481)
• Project Period (FY): 2009 – 2011
• Project Status: Completed (Fiscal Year 2011)
• Budget Amount: ¥5,070,000 (Direct Cost: ¥3,900,000、Indirect Cost: ¥1,170,000); Fiscal Year 2011: ¥650,000 (Direct Cost: ¥500,000、Indirect Cost: ¥150,000); Fiscal Year 2010: ¥650,000 (Direct Cost: ¥500,000、Indirect Cost: ¥150,000); Fiscal Year 2009: ¥3,770,000 (Direct Cost: ¥2,900,000、Indirect Cost: ¥870,000)
• Keywords: エピタキシャル成長 / X線回折 / 鉄シリサイド / 薄膜 / 構造転移 / エピタキシャル

Research Abstract

Initial stages of reactive deposition epitaxy of FeSi2 on Si(001)were observed by in situ X-ray diffraction. At 450℃, nitially nano-crystallites of α-FeSi2 high-temperature phase are formed. With increasing thickness of the deposited Fe, the α-FeSi2 crystallites gradually disappear and β-FeSi2, which is the stable phase at the growth temperature, supersedes them completely. The α-axis of the β-FeSi2 film aligns to the Si[001] axis during annealing up to 900℃.

Research Products

• [Presentation] Reactive Deposition Epitaxy of α-FeSi2 Islands on Si(001)Observed by in situ X-Ray Diffraction (2011)
  • Author(s): T. Hanada, H. Tajiri, O. Sakata, and T. Matsuoka
  • Organizer: The Seventh International Conference on Low Dimensional Structures and Devices(LDSD2011)
  • Place of Presentation: Telchac, Mexico
  • Year and Date: 2011-05-26
• [Presentation] Reactive Deposition Epitaxy of β-FeSi_2 Islands on Si(001) Observed by in situ X-Ray Diffraction (2011)
  • Author(s): 花田貴
  • Organizer: The Seventh International Conference on Low Dimensional Structures and Devices (LDSD2011)
  • Place of Presentation: メキシコ、テルチャク
  • Year and Date: 2011-05-26
• [Presentation] BL13XUの超高真空X線回折装置による半導体薄膜に関する最近の成果 (2011)
  • Author(s): 花田貴
  • Organizer: SPring-8利用者懇談会表界面・薄膜ナノ構造研究会
  • Place of Presentation: 大阪
  • Year and Date: 2011-03-11
• [Presentation] β-FeSi_2/Si(001)熱反応堆積成長のその場X線回折:α-FeSi_2の成長と消滅 (2009)
  • Author(s): 花田貴
  • Organizer: 第70回応用物理学会学術講演会
  • Place of Presentation: 富山
  • Year and Date: 2009-09-11
• [Presentation] β-FeSi2/Si(001)熱反応堆積成長のその場X線回折: α-FeSi2の成長と消滅 (2009)
  • Author(s): 花田貴、田尻寛男、坂田修身、松岡隆志
  • Organizer: 第70回応用物理学会学術講演会
  • Place of Presentation: 富山
  • Year and Date: 2009-09-10