Evaluation of Microscopic Properties and Elucidation of Charge-Trapping Mechanism of Organic Transistors with Electron Spin Resonance
Project/Area Number |
21560008
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Research Category |
Grant-in-Aid for Scientific Research (C)
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Allocation Type | Single-year Grants |
Section | 一般 |
Research Field |
Applied materials science/Crystal engineering
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Research Institution | University of Tsukuba |
Principal Investigator |
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Co-Investigator(Kenkyū-buntansha) |
TAKEYA Junichi 大阪大学, 産業科学研究所, 教授 (20371289)
|
Project Period (FY) |
2009 – 2011
|
Project Status |
Completed (Fiscal Year 2011)
|
Budget Amount *help |
¥4,680,000 (Direct Cost: ¥3,600,000、Indirect Cost: ¥1,080,000)
Fiscal Year 2011: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2010: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
Fiscal Year 2009: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000)
|
Keywords | 有機トランジスタ / 電子スピン共鳴 / ミクロ特性評価 / 処理電荷トラップ機構 / 界面処理 / 有機単結晶 / 有機薄膜 / 電荷トラップ機構 / バイアスストレス |
Research Abstract |
We applied an electron spin resonance (ESR) method to field-effect transistors (FET) with organic crystals, conducting polymers, etc. to perform microscopic characterization of organic molecules in crystal grains or at device interfaces. The ESR method is high sensitive and capable of characterizing materials at molecular level. Using this method, we performed analyses of dynamics of charge carriers and charge trapping states at device interfaces. Moreover, we clarified formation of magnetic interactions and nonmagnetic states of charge carriers under high density charges.
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Report
(4 results)
Research Products
(162 results)
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[Journal Article] Microscopic mechanisms behind the high mobility in rubrene single-crystal transistors as revealed by field-induced electron spin resonance2011
Author(s)
K.Marumoto, N.Arai, H.Goto, M.Kijima, K.Murakami, Y.Tominari, J.Takeya, Y.Shimoi, H.Tanaka, S.Kuroda, T.Kaji, T.Nishikawa, T.Takenobu, Y.Iwasa
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Journal Title
Physical Review B
Volume: 83
Related Report
Peer Reviewed
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[Presentation] On the Microscopic Mechanism of Very High Mobility in Organic Single-Crystal Transistors Directly Revealed by FI-ESR2010
Author(s)
K.Marumoto, N.Arai, H.Goto, M.Kijima, K.Murakami, Y.Tominari, J.Takeya, Y.Shimoi, H.Tanaka, S.Kuroda, T.Kaji, T.Nishikawa, T.Takenobu, Y.Iwasa
Organizer
International Conference on Science and Technology of Synthetic Metals 2010 (ICSM 2010)
Place of Presentation
Kyoto International Conference Center, Kyoto, Japan
Year and Date
2010-07-08
Related Report
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[Presentation] Spatial Extent of Doping-Induced Hole Carriers in Very High-Mobility Rubrene Single Crystals2010
Author(s)
N.Arai, K.Marumoto, M.Tsuji, H.Goto, M.Kijima, K.Murakami, Y.Tominari, J.Takeya, Y.Shimoi, H.Tanaka, S.Kuroda, T.Kaji, T.Nishikawa, T.Takenobu, Y.Iwasa
Organizer
International Conference on Science and Technology of Synthetic Metals 2010 (ICSM 2010)
Place of Presentation
Kyoto International Conference Center, Kyoto, Japan
Year and Date
2010-07-08
Related Report
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