Investigation of void formation mechanism beneath thin AlN layers grown on foreign substrates
| Project/Area Number |
21560009
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | Tokyo University of Agriculture and Technology |
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Principal Investigator |
KUMAGAI Yoshinao 東京農工大学, 大学院・工学研究院, 准教授 (20313306)
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| Project Period (FY) |
2009 – 2011
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| Project Status |
Completed (Fiscal Year 2011)
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| Budget Amount *help |
¥4,680,000 (Direct Cost: ¥3,600,000、Indirect Cost: ¥1,080,000)
Fiscal Year 2011: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
Fiscal Year 2010: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000)
Fiscal Year 2009: ¥1,950,000 (Direct Cost: ¥1,500,000、Indirect Cost: ¥450,000)
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| Keywords | エピタキシャル成長 / 窒化アルミニウム / 自立基板 / サファイア基板 / ヘテロ界面 / 分解メカニズム / 自発分離 / 無極性 / サファイア |
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| Research Abstract |
Thin AlN layers were grown on sapphire and SiC substrates with various orientations at 1065℃by hydride vapor phase epitaxy. Then, heat-treatment of the substrates was performed in NH_3 added H_2 flow up to 1450℃. It was found that hydrogen diffuses through the thin AlN layer to the interface via dislocations and reacts with the substrate, which yields voids beneath the thin AlN layer. Self-separation of thick AlN layers, subsequently grown at 1450℃after the void formation, occurred during post-growth cooling when segment ratio of voids at interface was about 50%
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Report
(4 results)
Research Products
(21 results)
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[Presentation] AlN/sapphire (0001)テンプレート上へのAlN HVPE高速成長における成長速度の影響2011
Author(s)
添田邦光, 酒井美希, 関口修平, 久保田有紀, 永島徹, 富樫理恵, 村上尚, 木下亨, 熊谷義直, 柳裕之, 纐纈明伯
Organizer
第72回応用物理学会学術講演会
Place of Presentation
山形大学小白川キャンパス
Year and Date
2011-08-30
Related Report
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