Investigation of void formation mechanism beneath thin AlN layers grown on foreign substrates

• Project/Area Number: 21560009
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Applied materials science/Crystal engineering
• Research Institution: Tokyo University of Agriculture and Technology
• Principal Investigator: KUMAGAI Yoshinao 東京農工大学, 大学院・工学研究院, 准教授 (20313306)
• Project Period (FY): 2009 – 2011
• Project Status: Completed (Fiscal Year 2011)
• Budget Amount: ¥4,680,000 (Direct Cost: ¥3,600,000、Indirect Cost: ¥1,080,000); Fiscal Year 2011: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000); Fiscal Year 2010: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000); Fiscal Year 2009: ¥1,950,000 (Direct Cost: ¥1,500,000、Indirect Cost: ¥450,000)
• Keywords: エピタキシャル成長 / 窒化アルミニウム / 自立基板 / サファイア基板 / ヘテロ界面 / 分解メカニズム / 自発分離 / 無極性 / サファイア

Research Abstract

Thin AlN layers were grown on sapphire and SiC substrates with various orientations at 1065℃by hydride vapor phase epitaxy. Then, heat-treatment of the substrates was performed in NH_3 added H_2 flow up to 1450℃. It was found that hydrogen diffuses through the thin AlN layer to the interface via dislocations and reacts with the substrate, which yields voids beneath the thin AlN layer. Self-separation of thick AlN layers, subsequently grown at 1450℃after the void formation, occurred during post-growth cooling when segment ratio of voids at interface was about 50%

Research Products

• [Journal Article] Formation of AlN on sapphire surfaces by high-temperature heating in a mixed flow of H_2 and N_2 (2012)
  • Author(s): Y. Kumagai, T. Igi, M. Ishizuki, R. Togashi, H. Murakami, K. Takada, A. Koukitu
  • Journal Title: Journal of Crystal Growth Volume: Vol.350 Issue: 1 Pages: 60-65
  • DOI: 10.1016/j.jcrysgro.2011.12.023
  • Peer Reviewed
• [Journal Article] Control of in-plane epitaxial relationship of c-plane AlN layers grown on a-plane sapphire substrates by hydride vapor phase epitaxy (2011)
  • Author(s): J. Tajima, R. Togashi, H. Murakami, Y. Kumagai, K. Takada, and A. Koukitu
  • Journal Title: Physica Status Solidi(c) Volume: Vol.8No.7-8 Issue: 7-8 Pages: 2028-2030
  • DOI: 10.1002/pssc.201000954
  • Peer Reviewed
• [Journal Article] Carrier Gas Dependence at Initial Processes for a-Plane AlN Growth on r-Plane Sapphire Substrates by Hydride Vapor Phase Epitaxy (2011)
  • Author(s): J. Tajima, C. Echizen, R. Togashi, H. Murakami, Y. Kumagai, K. Takada, and A. Koukitu
  • Journal Title: Japanese Journal of Applied Physics Volume: Vol.50, No.5 Issue: 5R Pages: 055501-055501
  • DOI: 10.1143/jjap.50.055501
  • Peer Reviewed
• [Journal Article] Investigation of void formation beneath thin AlN layers by decomposition of sapphire substrates for self-separation of thick AlN layers grown by HVPE (2010)
  • Author(s): Y. Kumagai, Y. Enatsu, M. Ishizuki, Y. Kubota, J. Tajima, T. Nagashima, H. Murakami, K. Takada, A. Koukitu
  • Journal Title: Journal of Crystal Growth Volume: Vol.312 Issue: 18 Pages: 2530-2536
  • DOI: 10.1016/j.jcrysgro.2010.04.008
  • Peer Reviewed
• [Journal Article] Investigation of void formation beneath thin AlN layers by decomposition of sapphire substrates for self-separation of thick AlN layers grown by HYPE (2010)
  • Author(s): Y.Kumagai, Y.Enatsu, M.Ishizuki, Y.Kubota, J.Tajima, T.Nagashima, H.Murakami, K.Takada, A.Koukitu
  • Journal Title: Journal of Crystal Growth Volume: 312 Pages: 2530-2536
  • Peer Reviewed
• [Presentation] サファイア基板の水素・窒素混合雰囲気下熱処理による表面分解およびAlN形成の熱力学的検討 (2011)
  • Author(s): 国崎敦, 猪木孝洋, 富樫理恵, 村上尚, 熊谷義直, 柳裕之, 纐纈明伯
  • Organizer: 第41回結晶成長国内会議(NCCG-41)
  • Place of Presentation: つくば国際会議場
  • Year and Date: 2011-11-05
• [Presentation] 高温下での水素・窒素同時供給によるサファイア基板表面分解・AlN形成における面方位依存性 (2011)
  • Author(s): 猪木孝洋, 国崎敦, 富樫理恵, 村上尚, 熊谷義直, 柳裕之, 纐纈明伯
  • Organizer: 第41回結晶成長国内会議(NCCG-41)
  • Place of Presentation: つくば国際会議場
  • Year and Date: 2011-11-05
• [Presentation] AlN/sapphire(0001)テンプレート上AlN HVPE成長における成長速度増加の検討 (2011)
  • Author(s): 添田邦光, 酒井美希, 関口修平, 久保田有紀, 永島徹, 村上尚, 木下亨, 熊谷義直, 柳裕之, 纐纈明伯
  • Organizer: 第41回結晶成長国内会議(NCCG-41)
  • Place of Presentation: つくば国際会議場
  • Year and Date: 2011-11-03
• [Presentation] 高温熱処理によるサファイア表面分解・AlN形成における面方位依存性 (2011)
  • Author(s): 猪木孝洋, 他
  • Organizer: 第72回応用物理学会学術講演会
  • Place of Presentation: 山形大学
  • Year and Date: 2011-08-30
• [Presentation] 高温熱処理によるサファイア表面分解・AlN形成における面方位依存性 (2011)
  • Author(s): 猪木孝洋, 国崎敦, 富樫理恵, 村上尚, 熊谷義直, 柳裕之, 綴織明伯
  • Organizer: 第72回応用物理学会学術講演会
  • Place of Presentation: 山形大学小白川キャンパス
  • Year and Date: 2011-08-30
• [Presentation] 水素・窒素混合雰囲気下熱処理におけるc面サファイア基板表面分解・AlN形成の挙動及びその熱力学解析 (2011)
  • Author(s): 国崎敦, 猪木孝洋, 富樫理恵, 村上尚, 熊谷義直, 柳裕之, 纐纈明伯
  • Organizer: 第72回応用物理学会学術講演会
  • Place of Presentation: 山形大学小白川キャンパス
  • Year and Date: 2011-08-30
• [Presentation] AlN/sapphire (0001)テンプレート上へのAlN HVPE高速成長における成長速度の影響 (2011)
  • Author(s): 添田邦光, 酒井美希, 関口修平, 久保田有紀, 永島徹, 富樫理恵, 村上尚, 木下亨, 熊谷義直, 柳裕之, 纐纈明伯
  • Organizer: 第72回応用物理学会学術講演会
  • Place of Presentation: 山形大学小白川キャンパス
  • Year and Date: 2011-08-30
• [Presentation] Growth of AlN on homo- and hetero-substrates by HVPE (2011)
  • Author(s): Yoshinao Kumagai
  • Organizer: 5th International Workshop on Crystal Growth Technology (IWCGT-5)
  • Place of Presentation: Berlin, Germany(Invited)
  • Year and Date: 2011-06-30
• [Presentation] 水素・窒素混合雰囲気での高温熱処理によるc面サファイア基板表面分解及びAlN形成 (2011)
  • Author(s): 猪木孝洋, 国崎敦, 富樫理恵, 村上尚, 熊谷義直, 柳裕之, 纐纈明伯
  • Organizer: 日本結晶成長学会ナノ構造・エピタキシャル成長分科会第3回窒化物半導体結晶成長講演会
  • Place of Presentation: 九州大学筑紫キャンパス
  • Year and Date: 2011-06-18
• [Presentation] Formation of AlN on sapphire surface by high temperature heating in the mixed flow of H_2 and N_2 (2011)
  • Author(s): Y. Kumagai, 他
  • Organizer: 7th International Workshop on Bulk Nitride Semiconductors
  • Place of Presentation: Wakayama, Japan
  • Year and Date: 2011-03-16
• [Presentation] Control of in-plane Epitaxial Relationship of c-plane AlN Layers Grown on a-plane Sapphire Substrates by Hydride Vapor Phase Epitaxy (2010)
  • Author(s): J. Tajima, 他
  • Organizer: International Workshop on Nitride Semiconductors 2010
  • Place of Presentation: Tampa, U. S. A
  • Year and Date: 2010-09-22
• [Presentation] 非c軸配向AlNグレインを利用した6H-SiC(0001)基板上AlNのSelf-ELO (2010)
  • Author(s): 関口修平, 他
  • Organizer: 第71回応用物理学会学術講演会
  • Place of Presentation: 長崎大学
  • Year and Date: 2010-09-14
• [Presentation] Growth of AlN on homo-and hetero-substrates by HVPE (2010)
  • Author(s): Y. Kumagai
  • Organizer: 5th International Workshop on Crystal Growth Technology
  • Place of Presentation: Berlin, Germany
  • Year and Date: 2010-06-30
• [Presentation] r面sapphire基板上a面AlN HVPE成長初期過程におけるキャリアガスの影響 (2010)
  • Author(s): 田島純平, 富樫理恵, 村上尚, 高田和哉, 熊谷義直, 纐纈明伯
  • Organizer: 日本結晶成長学会ナノエピ分科会第2回窒化物半導体結晶成長講演会
  • Place of Presentation: 三重大学
  • Year and Date: 2010-05-14
• [Presentation] Investigation of void formation beneath thin AlN layers by decomposition of sapphire substrates for self-separation of thick AlN layers grown by HVPE (2009)
  • Author(s): Y. Kumagai, 他
  • Organizer: 6th International Workshop on Bulk Nitride Semiconductors
  • Place of Presentation: Poland
  • Year and Date: 2009-08-24
• [Presentation] Investigation of void formation beneath thin AlN layers by decomposition of sapphire substrates for self-separation of thick AlN layers grown by HVPE (2009)
  • Author(s): Yoshinao Kumagai
  • Organizer: 6th International Workshop on Bulk Nitride Semi-conductors(IWBNS-VI)
  • Place of Presentation: Galindia Mazurski Eden, Iznota, Mikolajki, Ruciane Nida, Poland
  • Year and Date: 2009-08-24