Study on crystal grains of GaN which has microstructures in mesoscopic scale.

• Project/Area Number: 21560013
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Applied materials science/Crystal engineering
• Research Institution: Nagoya University
• Principal Investigator: AKIMOTO Koichi 名古屋大学, 工学研究科, 准教授 (40262852)
• Project Period (FY): 2009 – 2011
• Project Status: Completed (Fiscal Year 2011)
• Budget Amount: ¥4,420,000 (Direct Cost: ¥3,400,000、Indirect Cost: ¥1,020,000); Fiscal Year 2011: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000); Fiscal Year 2010: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000); Fiscal Year 2009: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
• Keywords: 化合物半導体 / X線回折 / 結晶工学 / 窒化ガリウム / メゾスコピック / GaN

Research Abstract

By X-ray topography using CCD camera,ΔθandΔd successfully measured separately inμm order GaN which has microstructures in mesoscopic scale. By employing Darwin's dynamical X-ray diffraction theory, quantitative evaluation of strain at surfaces and interfaces becomes possible. Method of quantitative strain analysis on the GaN surface was established.

Research Products

• [Journal Article] Quantitative strain analysis of surfaces and interfaces using extremely asymmetric X-ray diffraction(Topical Review) (2010)
  • Author(s): K. Akimoto and T. Emoto
  • Journal Title: Journal of Physics : Condensed Matter Volume: 22(47) Issue: 47 Pages: 473001-473001
  • DOI: 10.1088/0953-8984/22/47/473001
  • Peer Reviewed
• [Journal Article] Structure of the quasi-one-dimensional Si(553)-Au surface (2010)
  • Author(s): W. Voegeli, T. Takayama, T. Shirasawa, M. Abe, K. Kubo, T. Takahashi, K. Akimoto, and H. Sugiyama
  • Journal Title: Gold dimer row and silicon honeycomb chain, Phys. Rev Volume: 82 Issue: 7 Pages: 75426-75426
  • DOI: 10.1103/physrevb.82.075426
  • Peer Reviewed
• [Journal Article] Quantitative strain analysis of surfaces and interfaces using extremely asymmetric X-ray diffraction (2010)
  • Author(s): K.Akimoto, T.Emoto
  • Journal Title: Journal of Physics : Condensed Matter Volume: 22 Pages: 473001-473001
  • Peer Reviewed
• [Journal Article] Structure of the SiC(0001)-√3×√3-R30゜ surface after initial oxidation (2010)
  • Author(s): W.Voegeli, K.Akimoto, A.Ichimiya, Y.Hisada.
  • Journal Title: Surface Science Volume: 604 Pages: 1713-1717
  • Peer Reviewed
• [Journal Article] Structure of the quasi-one-dimensional Si(553)-Au surface : Gold dimer row and silicon honeycomb chain (2010)
  • Author(s): W.Voegeli, T.Shirasawa, T.Takahashi, K.Akimotoa.
  • Journal Title: Physical Review B Volume: 82 Pages: 75426-75426
  • Peer Reviewed
• [Journal Article] Strain evolution in Si substrate due to implantation of Me Vion observed by extremely asymmetric x-ray diffraction (2009)
  • Author(s): T. Emoto, J. Ghatak, P. V. Satyam, and K. Akimoto
  • Journal Title: J Appl. Physics Volume: 106(4) Issue: 4 Pages: 43516-43516
  • DOI: 10.1063/1.3202329
  • Peer Reviewed
• [Journal Article] Structural Study of the Si(553)-Au Surface (2009)
  • Author(s): T. Takayama, W. Voegeli, T. Shirasawa, K. Kubo, M. Abe, and T. Takahashi, K. Akimoto, H. Sugiyama
  • Journal Title: e-Journal of Surface Science and Nanotechnology Volume: 7 Pages: 533-536
  • DOI: 10.1380/ejssnt.2009.533
  • NAID: 130004439142
  • ISSN: 1348-0391
  • Peer Reviewed
• [Journal Article] Strain evolution in Si substrate due to implantation of MeV ion observed by extremely asymmetric x-ray diffraction (2009)
  • Author(s): T.Emoto, P.V.Satyam, K.Akimoto
  • Journal Title: Journal of Applied Physics 106(4) Pages: 43516-43516
  • Peer Reviewed
• [Journal Article] Structural Study of the Si(553)-Au Surface (2009)
  • Author(s): T.Takayama, W.Voegeli, T.Takahashi, K.Akimoto
  • Journal Title: e-Journal of Surface Science and Nanotechnology 7 Pages: 533-536
  • Peer Reviewed
• [Presentation] X線回折法によるGaN表面近傍のひずみ評価 (2012)
  • Author(s): 鈴木良和,持木健吾,秋本晃一,浪田秀郎,長尾哲
  • Organizer: 2012年春季第59回応用物理学関係連合講演会
  • Place of Presentation: 早稲田大学(東京都)
  • Year and Date: 2012-03-18
• [Presentation] Strain analysis of SiC and GaN surface regions using extremely asymmetric X-ray diffraction, 11th International Conference on Atomically Controlled Surfaces (2011)
  • Author(s): K. Akimoto
  • Organizer: 11th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures(ACSIN11)
  • Place of Presentation: St. Petersburg(Russia)
  • Year and Date: 2011-10-04
• [Presentation] Strain analysis of SiC and GaN surface regions using extremely asymmetric X-ray diffraction (2011)
  • Author(s): K.Akimoto
  • Organizer: 11th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN11)
  • Place of Presentation: St.Petersburg (Russia)
  • Year and Date: 2011-10-04
• [Presentation] X線トポグラフ法によるGaN結晶の結晶面の傾きと面間隔の伸縮の分離 (2011)
  • Author(s): 持木健吾,鈴木良和,秋本晃一,浪田秀郎,長尾哲
  • Organizer: 2011年秋季第72回応用物理学会学術講演会
  • Place of Presentation: 山形大学(山形県
  • Year and Date: 2011-08-30
• [Presentation] X線回折法によるGaN表面近傍のひずみ評価(計算) (2011)
  • Author(s): 鈴木良和,持木健吾,秋本晃一,榎本貴志
  • Organizer: 2011年秋季第72回応用物理学会学術講演会
  • Place of Presentation: 山形大学(山形県)
  • Year and Date: 2011-08-30
• [Presentation] X線トポグラフ法によるGaN結晶の結晶面の傾きと面間隔の伸縮の分離 (2011)
  • Author(s): 持木健吾, 鈴木良和, 秋本晃一, 浪田秀郎, 長尾哲
  • Organizer: 2011年秋季第72回応用物理学会学術講演会
  • Place of Presentation: 山形大学(山形県)
  • Year and Date: 2011-08-30
• [Presentation] 極端に非対称なX線回折法による半導体表面界面の格子ひずみ解析 (2011)
  • Author(s): 秋本晃一
  • Organizer: 物質・材料研究機構
  • Place of Presentation: 茨城県
  • Year and Date: 2011-07-25
• [Presentation] 極端に非対称なX線回折法による半導体表面界面の格子ひずみ解析 (2011)
  • Author(s): 秋本晃一
  • Organizer: 第58回応用物理学関係連合講演会
  • Place of Presentation: 要旨集
  • Year and Date: 2011-03-09
• [Presentation] Novel Film Growth Mechanism using Tribo-Assisted Phenomenon (2009)
  • Author(s): K.Akimoto
  • Organizer: 10th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures
  • Place of Presentation: グラナダ国際会議場(グラナダ、スペイン)
  • Year and Date: 2009-09-22
• [Patent(Industrial Property Rights)] 周期表第13族金属窒化物基板 (2012)
  • Inventor(s): 浪田秀郎,長尾哲,秋本晃一
  • Industrial Property Rights Holder: 三菱化学株式会社
  • Industrial Property Number: 2011-176546
  • Filing Date: 2012-02-28
• [Patent(Industrial Property Rights)] 窒化物半導体結晶の測定方法、ドメインの検出方法および窒化物半導体結晶の評価方法 (2011)
  • Inventor(s): 浪田秀郎,長尾哲,大畑達寛,内山泰宏,秋本晃一
  • Industrial Property Rights Holder: 三菱化学株式会社
  • Industrial Property Number: 2011-176546
  • Filing Date: 2011-08-12
• [Patent(Industrial Property Rights)] 窒化物半導体結晶の測定方法、ドメインの検出方法および窒化物半導体結晶の評価方法 (2011)
  • Inventor(s): 浪田秀郎, 長尾哲, 大畑達寛, 内山泰宏, 秋本晃一
  • Industrial Property Rights Holder: 三菱化学株式会社
  • Industrial Property Number: 2011-176546
  • Filing Date: 2011-08-12