Study on crystal grains of GaN which has microstructures in mesoscopic scale.
Project/Area Number |
21560013
|
Research Category |
Grant-in-Aid for Scientific Research (C)
|
Allocation Type | Single-year Grants |
Section | 一般 |
Research Field |
Applied materials science/Crystal engineering
|
Research Institution | Nagoya University |
Principal Investigator |
AKIMOTO Koichi 名古屋大学, 工学研究科, 准教授 (40262852)
|
Project Period (FY) |
2009 – 2011
|
Project Status |
Completed (Fiscal Year 2011)
|
Budget Amount *help |
¥4,420,000 (Direct Cost: ¥3,400,000、Indirect Cost: ¥1,020,000)
Fiscal Year 2011: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2010: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2009: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
|
Keywords | 化合物半導体 / X線回折 / 結晶工学 / 窒化ガリウム / メゾスコピック / GaN |
Research Abstract |
By X-ray topography using CCD camera,ΔθandΔd successfully measured separately inμm order GaN which has microstructures in mesoscopic scale. By employing Darwin's dynamical X-ray diffraction theory, quantitative evaluation of strain at surfaces and interfaces becomes possible. Method of quantitative strain analysis on the GaN surface was established.
|
Report
(4 results)
Research Products
(21 results)