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High growth-rate hydride-vapor-phase of aluminum nitride

Research Project

Project/Area Number 21560014
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeSingle-year Grants
Section一般
Research Field Applied materials science/Crystal engineering
Research InstitutionMie University

Principal Investigator

MIYAKE Hideto  三重大学, 大学院・工学研究科, 准教授 (70209881)

Co-Investigator(Kenkyū-buntansha) HIRAMATSU Kazumasa  三重大学, 大学院・工学研究科, 教授 (50165205)
NAOI Hiroyuki  和歌山工業高等専門学校, 電気情報工学科, 准教授 (10373101)
Project Period (FY) 2009 – 2011
Project Status Completed (Fiscal Year 2011)
Budget Amount *help
¥4,810,000 (Direct Cost: ¥3,700,000、Indirect Cost: ¥1,110,000)
Fiscal Year 2011: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2010: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2009: ¥2,210,000 (Direct Cost: ¥1,700,000、Indirect Cost: ¥510,000)
Keywords窒化物半導体 / 窒化アルミニウム / AlN / ハイドライド気相成長法 / HVPE / 選択横方向成長 / 加工基板 / エッチピット / AIN / 貫通転位 / EPD法 / ファセット制御 / 紫外線発光 / ハイドライド気相エピタキシャル成長 / 触媒作用 / 横方向成長 / ELO
Research Abstract

AlN is an attractive substrate for short-wavelength optoelectronics devices based on AlGaN. For growth of AlN and AlGaN, lateral overgrowth using a patterned substrate is useful for control of dislocation penetration, because selective-area growth with masks, such as SiO2, cannot be applied. In this study, thick AlN films were grown by HVPE on AlN/sapphire stripe patterned seeds with triangular shape in cross section, and the TDs density on the surface of HVPE-grown films was reduced one order of magnitude from a AlN film without pattern seeds. We also have investigated threading dislocations(TDs) in epitaxial AlN films by etch-pit method. Epitaxial AlN films were etched by mixed acid solution(KOH+ NaOH). The etch-pits were classified into TD groups by those sizes.

Report

(4 results)
  • 2011 Annual Research Report   Final Research Report ( PDF )
  • 2010 Annual Research Report
  • 2009 Annual Research Report
  • Research Products

    (83 results)

All 2012 2011 2010 2009 Other

All Journal Article (21 results) (of which Peer Reviewed: 20 results) Presentation (56 results) Book (1 results) Remarks (4 results) Patent(Industrial Property Rights) (1 results)

  • [Journal Article] Microstructure of AlN grown on a nucleation layer on sapphire substrate2012

    • Author(s)
      R.Miyagawa, S.Yang, H.Miyake, K.Hiramatsu, T.Kuwahara, M.Mitsuhara, N.Kuwano
    • Journal Title

      Appl.Phys.Express

      Volume: Volime 5 No.2 Issue: 2 Pages: 025501-025501

    • DOI

      10.1143/apex.5.025501

    • Related Report
      2011 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Fabrication of crack-free thick AlN film on a-plane sapphire by low-pressure HVPE2012

    • Author(s)
      Y.Takagi, R.Miyagawa, H.Miyake, K.Hiramatsu
    • Journal Title

      Phys.Status Solidi

      Volume: vol.9 Issue: 3-4 Pages: 576-579

    • DOI

      10.1002/pssc.201100797

    • Related Report
      2011 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Effects of carrier gas and growth temperature on MOVPE growth of AlN2012

    • Author(s)
      R.Miyagawa, S.Yang, H.Miyake, H.Hiramatsu
    • Journal Title

      Phys.Status Solidi

      Volume: vol.9 Issue: 3-4 Pages: 499-502

    • DOI

      10.1002/pssc.201100712

    • Related Report
      2011 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Fabrication of Deep-Ultraviolet-Light-Source Tube Using Si-Doped AlGaN2011

    • Author(s)
      Y. Shimahara, H. Miyake, K. Hiramatsu, F. Fukuyo, T. Okada, H. Takaoka, H. Yoshida
    • Journal Title

      Applied Physics Express

      Volume: 4 Pages: 421031-3

    • NAID

      10028209557

    • Related Report
      2011 Final Research Report
    • Peer Reviewed
  • [Journal Article] HVPE growth of thick AlN on trench-patterned substrate2011

    • Author(s)
      K. Fujita, K. Okuura, H. Miyake, K. Hiramatsu and H. Hirayama
    • Journal Title

      Physica Status Solidi

      Volume: 8 Pages: 1483-1486

    • Related Report
      2011 Final Research Report
    • Peer Reviewed
  • [Journal Article] HVPE growth of AlN on trench-patterned 6H-SiC substrates2011

    • Author(s)
      K. Okumura, T. Nomura, H. Miyake, K. Hiramatsu and O. Eryuu
    • Journal Title

      Physica Status Solidi

      Volume: 8 Pages: 467-469

    • Related Report
      2011 Final Research Report
    • Peer Reviewed
  • [Journal Article] HVPE grown thick ALN on trench-patterned substrate2011

    • Author(s)
      K.Fujita, K.Okuura, H.Miyake, K.Hiramatsu, H.Hirayama
    • Journal Title

      Physica Status Solidi (c)

      Volume: 8 Issue: 5 Pages: 1483-1486

    • DOI

      10.1002/pssc.201001130

    • Related Report
      2011 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Control of AlN buffer/sapphire substrate interface for AlN growth2011

    • Author(s)
      R.Miyagawa, S.Yang, H.Miyake, K.Hiramatsu
    • Journal Title

      Physica Status Solidi (c)

      Volume: 8 Issue: 7-8 Pages: 2069-2071

    • DOI

      10.1002/pssc.201001186

    • Related Report
      2011 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Huge binding energy of localized biexcitons in Al-rich Al_xGa_<1-x>N2011

    • Author(s)
      R.Kittaka, H.Muto, H.Murotani, Y.Yamada, H.Miyake, K.Hiramatsu
    • Journal Title

      Applied Physics Letters

      Volume: 98

    • Related Report
      2010 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Raman Scattering Spectroscopy of Residual Stresses in Epitaxial AlN Films2011

    • Author(s)
      S.Yang, R.Miyagawa, H.Miyake, K.Hiramatsu, H.Harima
    • Journal Title

      Applied Physics Express

      Volume: 4

    • NAID

      10028155120

    • Related Report
      2010 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Growth of high quality c-plane AlN on a-plane sapphire2010

    • Author(s)
      R. Miyagawa, J. Wu, H. Miyake and K. Hiramatsu
    • Journal Title

      Material Research Society Symposium Proceedings

      Volume: 1201

    • Related Report
      2011 Final Research Report
    • Peer Reviewed
  • [Journal Article] Study of High-Quality and Crack-Free GaN Growth on 3C-SiC/Separation by Implanted Oxygen2010

    • Author(s)
      M. Narukawa, H. Asamura, K. Kawamura, H. Miyake and K. Hiramatsu
    • Journal Title

      Jpn. J. Appl. Phys

      Volume: 49

    • Related Report
      2011 Final Research Report
    • Peer Reviewed
  • [Journal Article] Fabrication and characterization of binary diffractive lens with the 100μm-order-focal length2010

    • Author(s)
      A. Motogaito, K. Arakawa, Y. Nakayama, H. Miyake and K. Hiramatsu
    • Journal Title

      Technical Digest of the 16th Microoptics Conference

      Pages: 207-208

    • Related Report
      2011 Final Research Report
    • Peer Reviewed
  • [Journal Article] Growth of high quality c-plane AlN on a-plane sapphire2010

    • Author(s)
      R.Miyagawa, J.Wu, H.Miyake, K.Hiramatsu
    • Journal Title

      Material Research Society Symposium Proceedings

      Volume: 1201

    • Related Report
      2010 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Influence of off-cutangle of r-plane sapphire on the crystal quality of nonpolar a-plane AlN by LP-HVPE2009

    • Author(s)
      J. Wu, K. Okuura, K. Fujita, K. Okumura, H. Miyake, and K. Hiramatsu
    • Journal Title

      Journal of Crystal Growth

      Volume: 311 Pages: 4473-4477

    • Related Report
      2011 Final Research Report
    • Peer Reviewed
  • [Journal Article] Effects of Substrate Plane on the Growth of High Quality AlN by Hydride Vapor Phase Epitaxy2009

    • Author(s)
      J. Wu, K. Okuura, H. Miyake, and K. Hiramatsu
    • Journal Title

      Applied Physics Express

      Volume: 2

    • NAID

      10027011951

    • Related Report
      2011 Final Research Report
    • Peer Reviewed
  • [Journal Article] Effects of initial stages on the crystal quality of nonpolar a-plane AlN on r-plane sapphire by low-pressure HVPE2009

    • Author(s)
      J. Wu, Y. Katagiri, K. Okuura, D. Li, H. Miyake and K. Hiramatsu
    • Journal Title

      Journal of Crystal Growth

      Volume: 311 Pages: 3801-3805

    • Related Report
      2011 Final Research Report
    • Peer Reviewed
  • [Journal Article] Effects of initial conditions and growth temperature on the properties of nonpolar a-plane AlN grown by LP-HVPE2009

    • Author(s)
      J. Wu, Y. Katagiri, K. Okuura, D. Li, H. Miyake and K. Hiramatsu
    • Journal Title

      Physica Status Solidi(c)

      Volume: 6

    • Related Report
      2011 Final Research Report
    • Peer Reviewed
  • [Journal Article] Low-pressure HVPE growth of crack-free thick AlN on a trench-patterned AlN template2009

    • Author(s)
      Y. Katagiri, S. Kishino, K. Okuura, H. Miyake and K. Hiramatsu
    • Volume
      311
    • Pages
      2831-2833
    • Related Report
      2011 Final Research Report
    • Peer Reviewed
  • [Journal Article] Effects of Substrate Plane on the Growth of High Quality AlN by Hydride Vapor Phase Epitaxy2009

    • Author(s)
      J.Wu, K.Okuura, H.Miyake, K.Hiramatsu
    • Journal Title

      Applied Physics Express 2

    • NAID

      10027011951

    • Related Report
      2009 Annual Research Report
    • Peer Reviewed
  • [Journal Article]2009

    • Author(s)
      三宅秀人, 宮川鈴衣奈, 他35名
    • Journal Title

      窒化物基板および講師整合基板の成長とデバイス特性((株) シーエムシー出版)

      Pages: 119-127

    • Related Report
      2009 Annual Research Report
  • [Presentation] HVPE法AlN成長におけるボイドを用いた歪み・転位低減技術2012

    • Author(s)
      三宅秀人, 平松和政
    • Organizer
      第59回応用物理学関係連合講演会
    • Place of Presentation
      早稲田大学早稲田キャンパス(招待講演)
    • Year and Date
      2012-03-16
    • Related Report
      2011 Annual Research Report
  • [Presentation] a面・n面サファイア上への減圧HVPE法によるAlN成長2012

    • Author(s)
      強力尚紀, 高木雄太, 三宅秀人, 平松和政,江龍修
    • Organizer
      第59回応用物理学関係連合講演会
    • Place of Presentation
      早稲田大学早稲田キャンパス
    • Year and Date
      2012-03-16
    • Related Report
      2011 Annual Research Report
  • [Presentation] 溝加工AlN基板上へのAlNのMOVPE成長におけるSiドーピング効果2012

    • Author(s)
      西尾剛, 楊士波, 三宅秀人, 平松和政
    • Organizer
      第59回応用物理学関係連合講演会
    • Place of Presentation
      早稲田大学早稲田キャンパス
    • Year and Date
      2012-03-16
    • Related Report
      2011 Annual Research Report
  • [Presentation] MOVPE法によるAlN成長におけるサファイア界面制御とTEM観察2012

    • Author(s)
      宮川鈴衣奈, 楊士波, 三宅秀人, 平松和政, 桑原崇彰, 光原昌寿, 桑野範之
    • Organizer
      第59回応用物理学関係連合講演会
    • Place of Presentation
      早稲田大学早稲田キャンパス
    • Year and Date
      2012-03-16
    • Related Report
      2011 Annual Research Report
  • [Presentation] サファイア基板上へのAlNのMOVPE成長における中間層制御2011

    • Author(s)
      宮川鈴衣奈、楊士波、三宅秀人、平松和政、桑原崇彰、桑野範之、光原昌寿
    • Organizer
      電子情報通信学会電子デバイス、電子部品・材料、レーザ・量子エレクトロニクス研究会
    • Place of Presentation
      京都大学桂キャンパス桂ホール
    • Year and Date
      2011-11-17
    • Related Report
      2011 Annual Research Report
  • [Presentation] エッチピット法によるAlNエビタキシャル膜中の貫通転位の評価2011

    • Author(s)
      野村拓也、三宅秀人、平松和政、龍祐樹、桑原崇彰、桑野範之
    • Organizer
      電子情報通信学会電子デバイス、電子部品・材料、レーザ・量子エレクトロニクス研究会
    • Place of Presentation
      京都大学桂キャンパス桂ホール
    • Year and Date
      2011-11-17
    • Related Report
      2011 Annual Research Report
  • [Presentation] 溝加工AlN上でのMOVPE法におけるAlN成長速度の異方性2011

    • Author(s)
      楊士波,宮川鈴衣奈,三宅秀人,平松和政
    • Organizer
      第72回応用物理学会学術講演会
    • Place of Presentation
      山形大学小白川キャンパス
    • Year and Date
      2011-08-31
    • Related Report
      2011 Annual Research Report
  • [Presentation] 減圧HVPE法による周期溝加工AlN/a面Sapphire上への厚膜AlN成長2011

    • Author(s)
      高木雄太, 宮川鈴衣奈, 三宅秀人, 平松和政
    • Organizer
      第72回応用物理学会学術講演会
    • Place of Presentation
      山形大学小白川キャンパス
    • Year and Date
      2011-08-30
    • Related Report
      2011 Annual Research Report
  • [Presentation] AlNのMOVPE成長におけるキャリアガスの影響2011

    • Author(s)
      宮川鈴衣奈, 楊士波, 三宅秀人, 平松和政
    • Organizer
      第72回応用物理学会学術講演会
    • Place of Presentation
      山形大学小白川キャンパス
    • Year and Date
      2011-08-30
    • Related Report
      2011 Annual Research Report
  • [Presentation] Fabrication of crack-free thick AlN film on a-plane sapphire by lowpressure HVPE2011

    • Author(s)
      Takagi, Y Miyagawa, R Miyake, H Hiramatsu, K
    • Organizer
      The 9th International Conference on Nitride Semiconductors (ICNS-9)
    • Place of Presentation
      Scottish Exhibition and Conference Center(グラスゴー・イギリス)
    • Year and Date
      2011-07-14
    • Related Report
      2011 Annual Research Report
  • [Presentation] Influence of carrier gas and growth temperature on MOVPE growth of AlN2011

    • Author(s)
      Miyagawa, R; Yang, S; Miyake, H; Hiramatsu, K
    • Organizer
      The 9th International Conference on Nitride Semiconductors (ICNS-9)
    • Place of Presentation
      Scottish Exhibition and Conference Center(グラスゴー・イギリス)
    • Year and Date
      2011-07-11
    • Related Report
      2011 Annual Research Report
  • [Presentation] Effects of carrier gas and temperature on MOVPE growth of AlN2011

    • Author(s)
      R.Miyagawa, S.Yang, H.Miyake, K.Hiramatsu
    • Organizer
      第30回電子材料シンポジウム(EMS-30)
    • Place of Presentation
      ラフォーレ琵琶湖
    • Year and Date
      2011-06-30
    • Related Report
      2011 Annual Research Report
  • [Presentation] Fabrication of crack-free thick AlN film on a-plane sapphire by low-pressure HVPE2011

    • Author(s)
      Y.Takagi, R.Miyagawa, H.Miyake, K.Hiramatsu
    • Organizer
      第30回電子材料シンポジウム(EMS-30)
    • Place of Presentation
      ラフォーレ琵琶湖
    • Year and Date
      2011-06-30
    • Related Report
      2011 Annual Research Report
  • [Presentation] 深い溝加工の6H-SiC基板を用いた減圧HVPE法によるAlN成長2011

    • Author(s)
      強力尚紀、三宅秀人、平松和政
    • Organizer
      第3回窒化物半導体結晶成長講演会
    • Place of Presentation
      九州大学筑紫キャンパス
    • Year and Date
      2011-06-18
    • Related Report
      2011 Annual Research Report
  • [Presentation] Raman scattering spectroscopy of residual stresses in epitaxial AlN films2011

    • Author(s)
      S.Yang, R.Miyagawa, H.Miyake, K.Hiramatsu, H.Harima
    • Organizer
      The 5th Asia-pacific Workshop on Widegap Semiconductors (APWS2011)
    • Place of Presentation
      鳥羽国際ホテル
    • Year and Date
      2011-05-23
    • Related Report
      2011 Annual Research Report
  • [Presentation] Study on interface for AlN growth on sapphire substrate2011

    • Author(s)
      R.Miyagawa, S.Yang, H.Miyake, K.Hiramatsu
    • Organizer
      The 5th Asia-pacific Workshop on Widegap Semiconductors (APWS2011)
    • Place of Presentation
      鳥羽国際ホテル
    • Year and Date
      2011-05-23
    • Related Report
      2011 Annual Research Report
  • [Presentation] エピタキシャルAlN膜のラマン散乱分光による評価2011

    • Author(s)
      楊士波、宮川鈴衣奈、三宅秀人、平松和政、播磨弘
    • Organizer
      電子情報通信学会電子デバイス、電子部品・材料、シリコン材料・デバイス研究会
    • Place of Presentation
      名古屋大学東山キャンパスベンチャービジネスラボラトリー
    • Year and Date
      2011-05-19
    • Related Report
      2011 Annual Research Report
  • [Presentation] a面Sapphire上周期溝加工c面AlNを基板に用いたHVPE法によるAlN厚膜成長2011

    • Author(s)
      高木雄太、三宅秀人、平松和政
    • Organizer
      電子情報通信学会電子デバイス、電子部品・材料、シリコン材料・デバイス研究会
    • Place of Presentation
      名古屋大学東山キャンパスベンチャービジネスラボラトリー
    • Year and Date
      2011-05-19
    • Related Report
      2011 Annual Research Report
  • [Presentation] Growth of High-Quality Si-Doped AlGaN by Low-Pressure Metalorganic Vapor Phase Ultraviolet Light Source using MOVPE grown Si-doped AlGaN on AlN/Sapphire2011

    • Author(s)
      H. Miyake, Y. Shimahara, K. Hiramatsu, F. Fukuyo, T. Okada, H. Takaoka, H. Yoshida
    • Organizer
      E-MRS 2011 Spring Meeting
    • Place of Presentation
      Nice, France
    • Year and Date
      2011-05-11
    • Related Report
      2011 Final Research Report
  • [Presentation] AlN/サファイア上の低?中Al組成AlGaN層の成長過程と転位の挙動2011

    • Author(s)
      桑野範之, 藤田智彰, 桑原崇彰, 三宅秀人, 平松和政
    • Organizer
      第58回応用物理学関係連合講演会
    • Place of Presentation
      神奈川工科大学
    • Year and Date
      2011-03-27
    • Related Report
      2010 Annual Research Report
  • [Presentation] サファイア上へのAlN成長における界面層の評価(2)2011

    • Author(s)
      宮川鈴衣奈, 三宅秀人, 平松和政
    • Organizer
      第58回応用物理学関係連合講演会
    • Place of Presentation
      神奈川工科大学
    • Year and Date
      2011-03-25
    • Related Report
      2010 Annual Research Report
  • [Presentation] 減圧HVPE法によるAlNホモエピタキシャル成長2011

    • Author(s)
      野村拓也, 奥村健太, 三宅秀人, 平松和政, 江龍修, 福山博之
    • Organizer
      第58回応用物理学関係連合講演会
    • Place of Presentation
      神奈川工科大学
    • Year and Date
      2011-03-25
    • Related Report
      2010 Annual Research Report
  • [Presentation] 周期溝加工c面AlN/a面Sapphire上への減圧HVPE法によるAlN成長2011

    • Author(s)
      高木雄太, 三宅秀人, 平松和政
    • Organizer
      第58回応用物理学関係連合講演会
    • Place of Presentation
      神奈川工科大学
    • Year and Date
      2011-03-25
    • Related Report
      2010 Annual Research Report
  • [Presentation] Control of AlN buffer/sapphire substrate interface for AlN growth2011

    • Author(s)
      R. Miyagawa, S. Yang, H. Miyake, and K. Hiramatsu, H. Miyake, K. Okumura, T. Nomura, K. Hiramatsu and Y. Yamada
    • Organizer
      7th International Workshop on Bulk Nitride Semiconductors
    • Place of Presentation
      Wakayama, Japan
    • Year and Date
      2011-03-16
    • Related Report
      2011 Final Research Report
  • [Presentation] Homo-epitaxial growth of thick AlN film by HVPE2011

    • Author(s)
      H.Miyake
    • Organizer
      7th International Workshop on Bulk Nitride Semiconductors (IWBNS-VII 2011)
    • Place of Presentation
      高野山大学(招待講演)
    • Year and Date
      2011-03-16
    • Related Report
      2010 Annual Research Report
  • [Presentation] Deep-Ultraviolet Emission Si-doped AlGaN Excited by Electron Beam2011

    • Author(s)
      H.Miyake, Y.Shimahara, S.Ochiai, K.Hiramatsu, F.Fukuyo, T.Okada, H.Takaoka, H.Yoshida
    • Organizer
      3rd International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma 2011)
    • Place of Presentation
      名古屋工業大学
    • Year and Date
      2011-03-07
    • Related Report
      2010 Annual Research Report
  • [Presentation] Raman scattering spectroscopy for epitaxial AlN films2011

    • Author(s)
      S.Yang, R.Miyagawa, H.Miyake, K.Hiramatsu, H.Harima
    • Organizer
      SPIE Photonic West
    • Place of Presentation
      アメリカサンフランシスコ
    • Year and Date
      2011-01-26
    • Related Report
      2010 Annual Research Report
  • [Presentation] AlN homo-epitaxial growth on sublimation-AlN substrate by low-pressure HVPE2011

    • Author(s)
      T.Nomura, K.Okumura, H.Miyake, K.Hiramatsu, O.Eryuu, Y.Yamada
    • Organizer
      SPIE Photonic West
    • Place of Presentation
      アメリカサンフランシスコ
    • Year and Date
      2011-01-26
    • Related Report
      2010 Annual Research Report
  • [Presentation] サファイア基板上AlN成長における界面層評価2010

    • Author(s)
      宮川鈴衣奈, 楊士波, 三宅秀人, 平松和政
    • Organizer
      応用物理学会結晶工学分科会年末講演会
    • Place of Presentation
      学習院創立百周年記念会館
    • Year and Date
      2010-12-17
    • Related Report
      2010 Annual Research Report
  • [Presentation] 減圧HVPE法による周期溝加工AlN/サファイア上へのELO-AlN2010

    • Author(s)
      藤田浩平, 三宅秀人, 平松和政, 乗松潤, 平山秀樹
    • Organizer
      電子情報通信学会研究会電子デバイス、電子部品・材料、レーザ・量子エレクトロニクス研究会
    • Place of Presentation
      大阪大学
    • Year and Date
      2010-11-11
    • Related Report
      2010 Annual Research Report
  • [Presentation] SiCを基板に用いた減圧HVPE法によるAlN成長2010

    • Author(s)
      奥村建太, 野村拓也, 三宅秀人, 平松和政, 江龍修
    • Organizer
      電子情報通信学会研究会電子デバイス、電子部品・材料、レーザ・量子エレクトロニクス研究会
    • Place of Presentation
      大阪大学
    • Year and Date
      2010-11-11
    • Related Report
      2010 Annual Research Report
  • [Presentation] Fabrication Deep-violet Light Source using MOVPE-grown Si-doped AlGaN2010

    • Author(s)
      H. Miyake, Y. Shimahara, K. Hiramatsu, F. Fukuyo, T. Okada, H. Takaoka and H. Yoshida
    • Organizer
      Korea-Japan Workshop on Semiconductor for Energy Saving and Harvesting
    • Place of Presentation
      Seoul Korea
    • Year and Date
      2010-10-11
    • Related Report
      2011 Final Research Report
  • [Presentation] Fabrication Deep-violet Light Source using MOVPE-grown Si-doped AlGaN2010

    • Author(s)
      H.Miyake, Y.Shimahara, K.Hiramatsu, F.Fukuyo, T.Okada, H.Takaoka, H.Yoshida
    • Organizer
      Korea-Japan Workshop on Semiconductor for Energy Saving and Harvesting
    • Place of Presentation
      韓国ソウル(招待講演)
    • Year and Date
      2010-10-11
    • Related Report
      2010 Annual Research Report
  • [Presentation] Interface Control of AlN Buffer and Sapphire Substrate for AlN Growth2010

    • Author(s)
      R.Miyagawa, S.Yang, H.Miyake, K.Hiramatsu
    • Organizer
      International Workshop on Nitride Semiconductors 2010 (IWN-2010)
    • Place of Presentation
      アメリカタンパ
    • Year and Date
      2010-09-20
    • Related Report
      2010 Annual Research Report
  • [Presentation] サファイア上へのAlN成長における界面層の評価2010

    • Author(s)
      宮川鈴衣奈, 三宅秀人, 平松和政
    • Organizer
      第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学
    • Year and Date
      2010-09-16
    • Related Report
      2010 Annual Research Report
  • [Presentation] AlNのサファイア上AlGaN層の成長過程と貫通転位の挙動2010

    • Author(s)
      桑野範之, 藤田智彰, 三宅秀人, 平松和政
    • Organizer
      第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学
    • Year and Date
      2010-09-16
    • Related Report
      2010 Annual Research Report
  • [Presentation] エピタキシャルAlN膜のラマン散乱分光による評価2010

    • Author(s)
      楊士波, 宮川鈴衣奈, 張紀才, 三宅秀人, 平松和政, 播磨弘
    • Organizer
      第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学
    • Year and Date
      2010-09-15
    • Related Report
      2010 Annual Research Report
  • [Presentation] 昇華法AlN基板上への減圧HVPE法によるAlNホモエピタキシャル成長2010

    • Author(s)
      野村拓也, 奥村建太, 三宅秀人, 平松和政, 江龍修, 山田陽一
    • Organizer
      第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学
    • Year and Date
      2010-09-14
    • Related Report
      2010 Annual Research Report
  • [Presentation] 減圧HVPE法による周期溝加工AlN/サファイア上へのAlN横方向成長2010

    • Author(s)
      藤田浩平, 三宅秀人, 平松和政, 乗松潤, 平山秀樹
    • Organizer
      第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学
    • Year and Date
      2010-09-14
    • Related Report
      2010 Annual Research Report
  • [Presentation] Study on AlN buffer layer for AlN growth on sapphire substrate by MOVPE2010

    • Author(s)
      R.Miyagawa, H.Miyake, K.Hiramatsu
    • Organizer
      第29回電子材料シンポジウム(EMS29)
    • Place of Presentation
      ラフォーレ修善寺
    • Year and Date
      2010-07-15
    • Related Report
      2010 Annual Research Report
  • [Presentation] HVPE Growth of Thick AlN on Trench-Patterned Sapphire Substrate2010

    • Author(s)
      H.Miyake, K.Okuura, K.Fujita, K.Hiramatsu
    • Organizer
      The 3rd International Symposium on Growth of III-Nitrides (ISGN-3)
    • Place of Presentation
      フランスモンペリエ
    • Year and Date
      2010-07-06
    • Related Report
      2010 Annual Research Report
  • [Presentation] HVPE growth of AlN on trench-patterned 6H-SiC substrates2010

    • Author(s)
      K.Okumura, H.Miyake, K.Hiramatsu, O.Eryu
    • Organizer
      The 37th International Conference on Compound Semiconductors (ISCS2010)
    • Place of Presentation
      高松シンボルタワー
    • Year and Date
      2010-06-04
    • Related Report
      2010 Annual Research Report
  • [Presentation] HVPE growth of c-plane AlN on a-plane sapphire using high-temperature buffer layer2010

    • Author(s)
      Y.Takagi, R.Miyagawa, H.Miyake, K.Hiramatsu
    • Organizer
      The 37th International Conference on Compound Semiconductors (ISCS2010)
    • Place of Presentation
      高松シンボルタワー
    • Year and Date
      2010-06-02
    • Related Report
      2010 Annual Research Report
  • [Presentation] Deep-ultraviolet luminescence from Si-doped AlGaN grown by low-pressure MOVPE2010

    • Author(s)
      Y.Shimahara, H.Taketomi, H.Miyake, K.Hiramatsu, F.Fukuyo, T.Okada, H.Takaoka, H.Yoshida
    • Organizer
      The 8th International Symposium on Semiconductor Light Emitting Devices (ISSLED2010)
    • Place of Presentation
      中国 北京
    • Year and Date
      2010-05-19
    • Related Report
      2010 Annual Research Report
  • [Presentation] HVPE growth of crack-free thick AlN film on trench-patterned AlN template2010

    • Author(s)
      K.Fujita, K.Okuura, H.Miyake, K.Hiramatsu, J.Norimatsu, H.Hirayama
    • Organizer
      The 8th International Symposium on Semiconduct or Light Emitting Devices (ISSLED2010)
    • Place of Presentation
      中国 北京
    • Year and Date
      2010-05-19
    • Related Report
      2010 Annual Research Report
  • [Presentation] Fabrication of Deep Ultra-violet Light Source using AlGaN on AlN/sapphire2010

    • Author(s)
      H. Miyake, H. Taketomi, Y. Shimahara, K. Hiramatsu, F. Fukuyo, T. Okada, H. Takaoka and H. Yoshida
    • Organizer
      The 8th International Symposium on Semiconductor Light Emitting Devices
    • Place of Presentation
      Beijing, China
    • Year and Date
      2010-05-18
    • Related Report
      2011 Final Research Report
  • [Presentation] Fabrication of Deep Ultra-violet Light Source using AlGaN on AlN/sapphire2010

    • Author(s)
      H.Miyake, H.Taketomi, Y.Shimahara, K.Hiramatsu, F.Fukuyo, T.Okada, H.Takaoka, H.Yoshida
    • Organizer
      The 8th International Symposium on Semiconduct or Light Emitting Devices (ISSLED2010)
    • Place of Presentation
      中国 北京(招待講演)
    • Year and Date
      2010-05-18
    • Related Report
      2010 Annual Research Report
  • [Presentation] 溝加工6H-SiC基板上への減圧HVPE法によるAlN成長2010

    • Author(s)
      奥村建太, 三宅秀人, 平松和政, 江龍修
    • Organizer
      第57回応用物理学関係連合講演会
    • Place of Presentation
      東海大学 (平塚市)
    • Year and Date
      2010-03-17
    • Related Report
      2009 Annual Research Report
  • [Presentation] Low Pressure HVPE Growth of AlN on 6H-SiC2010

    • Author(s)
      奥村建太, 三宅秀人, 平松和政, 江龍修
    • Organizer
      IS Plasma 2010
    • Place of Presentation
      名城大学
    • Year and Date
      2010-03-08
    • Related Report
      2009 Annual Research Report
  • [Presentation] AlN Growth on Trench-Patterned AlN/Sapphire by Low-Pressure HVPE2010

    • Author(s)
      藤田浩平, 奥浦一輝, 三宅秀人, 平松和政, 乗松潤, 平山秀樹
    • Organizer
      IS Plasma 2010
    • Place of Presentation
      名城大学
    • Year and Date
      2010-03-08
    • Related Report
      2009 Annual Research Report
  • [Presentation] Growth of High-Quality AlN on a-Plane Sapphire by HVPE2010

    • Author(s)
      Y.Takagi, J.Wu, H.Miyake, K.Hiramatsu
    • Organizer
      IS Plasma 2010
    • Place of Presentation
      名城大学
    • Year and Date
      2010-03-08
    • Related Report
      2009 Annual Research Report
  • [Presentation] Fabrication of ultraviolet-C light source using MOVPE grown AlGaN layer on AlN/sapphire2010

    • Author(s)
      三宅秀人
    • Organizer
      SPIE Photonics West 2010
    • Place of Presentation
      サンフランシスコ (米国)
    • Year and Date
      2010-01-28
    • Related Report
      2009 Annual Research Report
  • [Presentation] 減圧HVPE法による溝加工基板上へのAlN成長2009

    • Author(s)
      奥浦一輝, 藤田浩平, 三宅秀人, 平松和政
    • Organizer
      第39回結晶成長国内会議
    • Place of Presentation
      名古屋大学
    • Year and Date
      2009-11-13
    • Related Report
      2009 Annual Research Report
  • [Presentation] 減圧HVPE法による6H-SiC上へのAlN成長2009

    • Author(s)
      奥村建太, 三宅秀人, 平松和政, 江龍修
    • Organizer
      第39回結晶成長国内会議
    • Place of Presentation
      名古屋大学
    • Year and Date
      2009-11-13
    • Related Report
      2009 Annual Research Report
  • [Presentation] The In-Plane Anisotropic and Polarized Raman-Active Modes Studies of Nonpolar AlN Grown on 6H-SiC by Low-Pressure HVPE2009

    • Author(s)
      J.Wu, K.Okumura, H.Miyake, K.Hiramatsu
    • Organizer
      The 8th International Conference on Nitride Semi conductors
    • Place of Presentation
      済州島 (韓国)
    • Year and Date
      2009-10-19
    • Related Report
      2009 Annual Research Report
  • [Presentation] 周期溝加工AlN/サファイア上への減圧HVPE法によるAlN成長2009

    • Author(s)
      藤田浩平, 奥浦一輝, 三宅秀人, 平松和政, 乗松潤, 平山秀樹
    • Organizer
      第70回応用物理学会学術講演会
    • Place of Presentation
      富山大学
    • Year and Date
      2009-09-08
    • Related Report
      2009 Annual Research Report
  • [Book] 窒化物基板および格子整合基板の成長とデバイス特性2009

    • Author(s)
      三宅秀人,宮川鈴衣奈
    • Publisher
      シーエムシー出版
    • Related Report
      2011 Final Research Report
  • [Remarks] ホームページ等三重大学大学院工学研究科電気電子工学専攻オプトエレクトロニクス研究室

    • URL

      http://www.opt.elec.mie-u.ac.jp

    • Related Report
      2011 Final Research Report
  • [Remarks] 三重大学大学院工学研究科電気電子工学専攻オプトエレクトロニクス研究室

    • URL

      http://www.opt.elec.mie-u.ac.jp

    • Related Report
      2011 Annual Research Report
  • [Remarks]

    • URL

      http://www.opt.elec.mie-u.ac.jp

    • Related Report
      2010 Annual Research Report
  • [Remarks]

    • URL

      http://www.opt.elec.mie-u.ac.jp

    • Related Report
      2009 Annual Research Report
  • [Patent(Industrial Property Rights)] 半導体素子用エピタキシャル基板,半導体素子用エピタキシャル基板の作製方法,およびALN単結晶自立基板2012

    • Inventor(s)
      三宅秀人,平松和政
    • Industrial Property Rights Holder
      国立大学法人三重大学
    • Industrial Property Number
      2012-129102
    • Filing Date
      2012-06-06
    • Related Report
      2011 Final Research Report

URL: 

Published: 2009-04-01   Modified: 2016-04-21  

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