| Project/Area Number |
21560015
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | Osaka University |
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Principal Investigator |
ZHOU Yikai 大阪大学, 産業科学研究所, 助教 (60346179)
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| Co-Investigator(Kenkyū-buntansha) |
ASAHI Hajime 大阪大学, 産業科学研究所, 教授 (90192947)
HASEGAWA Shigehiko 大阪大学, 産業科学研究所, 准教授 (50189528)
EMURA Shuichi 大阪大学, 産業科学研究所, 助教 (90127192)
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| Project Period (FY) |
2009 – 2011
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| Project Status |
Completed (Fiscal Year 2011)
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| Budget Amount *help |
¥4,810,000 (Direct Cost: ¥3,700,000、Indirect Cost: ¥1,110,000)
Fiscal Year 2011: ¥910,000 (Direct Cost: ¥700,000、Indirect Cost: ¥210,000)
Fiscal Year 2010: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
Fiscal Year 2009: ¥2,730,000 (Direct Cost: ¥2,100,000、Indirect Cost: ¥630,000)
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| Keywords | スピントロ二クス / 半導体物性 / MBE / ナノ材料 / 結晶工学 / スピンエレクトロニクス |
|---|
| Research Abstract |
GaGdN/ AlGaN multi-double quantum well and GaDyN/ GaN double barrier structures were grown by radio-frequency plasma-assisted molecular-beam epitaxy on GaN(0001) templates. Ferromagnetic behavior is confirmed for the samples at room temperature for all samples. Strong photoluminescence was observed from both GaGdN and GaN quantum wells at higher energy side of GaN excitonic peak. Enhanced g-factor was estimated to be about 60 for GaGdN/ AlGaN structure sample with quantum wells thickness of 1 nm. It is larger than GaN(g factor : 2). It is found that the interlayer coupling exists between GaDyN quantum wells. It is easy to control magnetic properties in the nanostructures.
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