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Study on Creation and Annihilation of electrons and holes in Compound Alloy semiconductors

Research Project

Project/Area Number 21560017
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeSingle-year Grants
Section一般
Research Field Applied materials science/Crystal engineering
Research InstitutionWakayama University

Principal Investigator

SHINOZUKA Yuzo  和歌山大学, システム工学部, 教授 (30144918)

Co-Investigator(Kenkyū-buntansha) ODA Masato  和歌山大学, システム工学部, 助教 (70452539)
Project Period (FY) 2009 – 2011
Project Status Completed (Fiscal Year 2011)
Budget Amount *help
¥4,550,000 (Direct Cost: ¥3,500,000、Indirect Cost: ¥1,050,000)
Fiscal Year 2011: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
Fiscal Year 2010: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
Fiscal Year 2009: ¥2,340,000 (Direct Cost: ¥1,800,000、Indirect Cost: ¥540,000)
Keywords光物性 / 化合物半導体 / 混晶 / 量子井戸 / 発光素子 / 半導体レーザー / 欠陥反応 / 再結合 / 信頼性
Research Abstract

We have theoretically studied the electronic states in A1-xA* xB type compound mix crystal with diagonal disorder using an extension of CPA. We found that 1) if the potential energyεB is larger or less than bothεA andεA*, the electronic energy spectrum of the mix crystal shows monotonous change in the composition dependence. On the other hand, 2) ifεB is located betweenεA andεA*, the electronic energy spectrum shows a large band gap bowing and the band gap sometimes becomes zero. We also studied possibility of feedback and inflation mechanism among carrier captures by a deep-level defect and transient induced lattice vibrations using proper configuration coordinate diagrams for many carriers. Treating the lattice motion classically we selfconsistently simulated the time evolution of the interaction mode and a series of athermal captures of electron(s) and hole(s). When both the activation energies E acte and E acth are small, a series of successive athermal captures is enhanced and probable for high carrier densities, however, we found that thepossibility of inflation in the amplitude of the lattice vibration critically depends on the minority capture rate and the relative width of the phonon frequency distribution.

Report

(4 results)
  • 2011 Annual Research Report   Final Research Report ( PDF )
  • 2010 Annual Research Report
  • 2009 Annual Research Report
  • Research Products

    (24 results)

All 2012 2011 2010 2009 Other

All Journal Article (7 results) (of which Peer Reviewed: 4 results) Presentation (14 results) Book (2 results) Remarks (1 results)

  • [Journal Article] Feedback and Inflation Mechanism in Successive Multiphonon Carrier Captures at Deep-level Defects2012

    • Author(s)
      K. Suzuki, M. Wakita and Y. Shinozuka
    • Journal Title

      MRS Spring Meeting proceedings

      Volume: (印刷中)

    • Related Report
      2011 Final Research Report
    • Peer Reviewed
  • [Journal Article] Feedback and Inflation Mechanism in Successive Multiphonon Carrier Captures at Deep-level Defects2012

    • Author(s)
      Kei Suzuki, Masaki Wakita, Yuzo Shinozuka
    • Journal Title

      2012 MRS Spring Meeting proceedings

      Volume: Symposium G(印刷中)

    • Related Report
      2011 Annual Research Report
    • Peer Reviewed
  • [Journal Article] 化合物混晶半導体の電子状態の理論2010

    • Author(s)
      原愛美、篠塚雄三
    • Journal Title

      光物性研究会論文集

      Volume: Vol.21 Pages: 158-161

    • Related Report
      2011 Final Research Report 2010 Annual Research Report
  • [Journal Article] Mechanisms of Recombination-enhanced Defect Reactions in Semiconductors2010

    • Author(s)
      Y. Shinozuka
    • Journal Title

      Mater. Res. Soc. Symp. Proc

      Volume: 1195

    • Related Report
      2011 Final Research Report
    • Peer Reviewed
  • [Journal Article] Mechanisms of Recombination-enhanced Defect Reactions in Semiconductors2010

    • Author(s)
      Y.Shinozuka
    • Journal Title

      Mater.Res.Soc.Symp.Proc. 1195

    • Related Report
      2009 Annual Research Report
    • Peer Reviewed
  • [Journal Article] 化合物混晶半導体の電子状態の理論2009

    • Author(s)
      日野篤、篠塚雄三
    • Journal Title

      光物性研究会論文集

      Volume: Vol.20 Pages: 365-368

    • Related Report
      2011 Final Research Report
  • [Journal Article] 化合物混晶半導体の電子状態の理論2009

    • Author(s)
      日野篤、篠塚雄三
    • Journal Title

      光物性研究会論文集 20

      Pages: 365-368

    • Related Report
      2009 Annual Research Report
  • [Presentation] 半導体中の欠陥反応の機構2012

    • Author(s)
      鈴木圭以、篠塚雄三
    • Organizer
      第59回応用物理学会
    • Place of Presentation
      早稲田大学
    • Year and Date
      2012-03-18
    • Related Report
      2011 Final Research Report
  • [Presentation] 半導体中の欠陥反応の機構2012

    • Author(s)
      鈴木圭以、篠塚雄三
    • Organizer
      第59回応用物理学会18p-E1-1
    • Place of Presentation
      早稲田大学早稲田キャンパス
    • Year and Date
      2012-03-18
    • Related Report
      2011 Annual Research Report
  • [Presentation] 半導体中の欠陥反応の機構2011

    • Author(s)
      鈴木圭以、篠塚雄三
    • Organizer
      第7回励起ナノプロセス研究会
    • Place of Presentation
      堺市国際障害者交流センター
    • Year and Date
      2011-11-01
    • Related Report
      2011 Annual Research Report 2011 Final Research Report
  • [Presentation] 励起ナノプロセス入門「総論」2011

    • Author(s)
      篠塚雄三
    • Organizer
      第48回応用物理学会スクール
    • Place of Presentation
      山形大学
    • Year and Date
      2011-08-29
    • Related Report
      2011 Final Research Report
  • [Presentation] 励起ナノプロセス入門総論2011

    • Author(s)
      篠塚雄三
    • Organizer
      第48回応用物理学会スクール
    • Place of Presentation
      山形大学小白川キャンパス(招待講演)
    • Year and Date
      2011-08-29
    • Related Report
      2011 Annual Research Report
  • [Presentation] 化合物混晶半導体の電子状態の理論2010

    • Author(s)
      原愛美、篠塚雄三
    • Organizer
      第20回光物性研究会
    • Place of Presentation
      大阪市立大学
    • Year and Date
      2010-12-11
    • Related Report
      2011 Final Research Report 2010 Annual Research Report
  • [Presentation] 混晶半導体の電子状態の理論的研究2010

    • Author(s)
      原愛美、篠塚雄三
    • Organizer
      応用物理学会2010年度秋季大会
    • Place of Presentation
      長崎大学
    • Year and Date
      2010-09-16
    • Related Report
      2011 Final Research Report 2010 Annual Research Report
  • [Presentation] 化合物混晶半導体の電子状態の理論2009

    • Author(s)
      日野篤、篠塚雄三
    • Organizer
      第20回光物性研究会
    • Place of Presentation
      大阪市立大学
    • Year and Date
      2009-12-12
    • Related Report
      2011 Final Research Report
  • [Presentation] 化合物混晶半導体の電子状態理論2009

    • Author(s)
      日野篤、篠塚雄三
    • Organizer
      第20回光物性研究会
    • Place of Presentation
      大阪市立大学
    • Year and Date
      2009-12-12
    • Related Report
      2009 Annual Research Report
  • [Presentation] Mechanisms of Recombination-enhanced Defect Reactions in Semiconductors2009

    • Author(s)
      Y. Shinozuka
    • Organizer
      Materials Research Society 2009 Fall Meeting
    • Place of Presentation
      Sheraton Hotel Boston USA
    • Year and Date
      2009-11-30
    • Related Report
      2011 Final Research Report 2009 Annual Research Report
  • [Presentation] Mechanism of Capture-Enhanced Defect Reactions in Semiconductors2009

    • Author(s)
      M. Negoro, S. Matsutani, T. Higashi, and Y. Shinozuka
    • Organizer
      Int. Symposium on the Physic of Excitation-assisted Nano-processes
    • Place of Presentation
      Daiwa Roynet Hotel, Wakayama, Japan
    • Year and Date
      2009-11-20
    • Related Report
      2011 Final Research Report
  • [Presentation] Mechanism of Capture-Enhanced Defect Reactions in Semiconductors2009

    • Author(s)
      M.Negoro, S.Matsutani, T.Higashi, Y.Shinozuka
    • Organizer
      International Symposium on the Physic of Excitation-assisted Nano-processes
    • Place of Presentation
      Daiwa Roynet Hotel Wakayama, Japan
    • Year and Date
      2009-11-20
    • Related Report
      2009 Annual Research Report
  • [Presentation] 化合物混晶半導体の電子状態の理論2009

    • Author(s)
      日野篤、篠塚雄三
    • Organizer
      化合物混晶半導体の電子状態の理論
    • Place of Presentation
      富山大学
    • Year and Date
      2009-09-10
    • Related Report
      2011 Final Research Report
  • [Presentation] 化合物混晶半導体の電子状態理論2009

    • Author(s)
      日野篤、篠塚雄三
    • Organizer
      応用物理学会2009年度秋季大会
    • Place of Presentation
      富山大学
    • Year and Date
      2009-09-10
    • Related Report
      2009 Annual Research Report
  • [Book] "Mechanism of Defect Reactions in Semiconductors" in" Reliability and Materials Issues of Optical Devices"2012

    • Author(s)
      Y. Shinozuka
    • Publisher
      Springer Verlag
    • Related Report
      2011 Final Research Report
  • [Book] Mechanism of Defect Reactions in Semiconductors in "Reliability and Materials Issues of Optical Devices"(Ed.by O.Ueda and S.Pearton)2012

    • Author(s)
      Y.Shinozuka
    • Publisher
      Springer Verlag(印刷中)
    • Related Report
      2011 Annual Research Report
  • [Remarks]

    • URL

      http://www.wakayama-u.ac.jp/.yuzo/index.html

    • Related Report
      2011 Final Research Report

URL: 

Published: 2009-04-01   Modified: 2016-04-21  

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