Study on the formation of carbon thin films obtained by electron-beam-induced-chemical vapor deposition combined with ultra low-temperature tunneling reaction of H atoms at ultra low temperature
| Project/Area Number |
21560031
|
|---|
| Research Category |
Grant-in-Aid for Scientific Research (C)
|
| Allocation Type | Single-year Grants |
|---|
| Section | 一般 |
|---|
| Research Field |
Thin film/Surface and interfacial physical properties
|
|---|
| Research Institution | University of Yamanashi |
|---|
Principal Investigator |
SATO Tetsuya 山梨大学, クリーンエネルギー研究センター, 准教授 (60252011)
|
|---|
| Co-Investigator(Kenkyū-buntansha) |
NAKAGAWA Kiyokazu 山梨大学, 大学院・医学工学総合研究部, 教授 (40324181)
MIYAJIMA Naoya 山梨大学, 大学院・医学工学総合研究部, 助教 (20345698)
YAMNAKA Junji 山梨大学, 大学院・医学工学総合研究部, 准教授 (20293441)
ARIMOTO Keisuke 山梨大学, 大学院・医学工学総合研究部, 准教授 (30345699)
|
|---|
| Project Period (FY) |
2009 – 2011
|
| Project Status |
Completed (Fiscal Year 2011)
|
| Budget Amount *help |
¥4,550,000 (Direct Cost: ¥3,500,000、Indirect Cost: ¥1,050,000)
Fiscal Year 2011: ¥910,000 (Direct Cost: ¥700,000、Indirect Cost: ¥210,000)
Fiscal Year 2010: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2009: ¥2,340,000 (Direct Cost: ¥1,800,000、Indirect Cost: ¥540,000)
|
|---|
| Keywords | カーボン / 非晶質 / 電子衝撃 / 薄膜 / 極低温 / トネンル / メタン / 水素原子 / 低速電子 / 欠陥密度 / アモルファス / トンネル / DLC / トンネル現象 / 低温 |
|---|
| Research Abstract |
We synthesized carbon films by electron-beam-induced-chemical vapor deposition combined with low-temperature H tunneling reactions on cooled substrates, which adsorb methane gases. The concentration of hydrogen(C_H) in carbon films were very low(1% to 6 at.%). The value of optical band gap changed from 0. 9 eV to 2. 5 eV. The values of spin density(Ns) decreased with increasing C_H and less than 10^<18> cm-^3 were found for the films with low sp^2 content.
|
Report
(4 results)
Research Products
(24 results)
