Bond Engineering in Surface Structure and Nano-Structure Formation for Lattice Mismatch Systems

• Project/Area Number: 21560032
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Thin film/Surface and interfacial physical properties
• Research Institution: Mie University
• Principal Investigator: ITO Tomonori 三重大学, 大学院・工学研究科, 教授 (80314136)
• Co-Investigator(Kenkyū-buntansha): AKIYAMA Toru 三重大学, 大学院・工学研究科, 助教 (40362363)
• Project Period (FY): 2009 – 2011
• Project Status: Completed (Fiscal Year 2011)
• Budget Amount: ¥4,810,000 (Direct Cost: ¥3,700,000、Indirect Cost: ¥1,110,000); Fiscal Year 2011: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000); Fiscal Year 2010: ¥910,000 (Direct Cost: ¥700,000、Indirect Cost: ¥210,000); Fiscal Year 2009: ¥2,730,000 (Direct Cost: ¥2,100,000、Indirect Cost: ¥630,000)
• Keywords: 量子論的アプローチ / 格子不整合系 / 半導体表面構造 / 状態図 / 計算科学 / ナノ構造 / 成長機構 / ぬれ層表面 / 酸化物表面構造 / 量子ドット / ドーピング機構 / 状熊図

Research Abstract

Surface structures in lattice mismatch system such as InAs/GaAs are systematically investigated using our ab initio-based approach incorporating beam equivalent pressure and temperature. Adsorption-desorption behaviors of In and As are also clarified on the stable surfaces of InAs(111) and InAs(001) wetting layers under growth conditions. Using these results, elementary processes of nano-structure formation are discussed for stacking fault tetrahedron on InAs(111) and quantum dot on InAs(001) grown on GaAs substrate.

Research Products

• [Journal Article] Ab initio-based approach to GaN surfaces : Reconstruction, adsorption, and incorporation (2012)
  • Author(s): T. Ito, T. Akiyama, K. Nakamura
  • Journal Title: Semicond. Sci. Technology Volume: 27
  • Peer Reviewed
• [Journal Article] Stability of nitrogen incorporated Al_20_3 surfaces : Formation of AlN layers by oxygen desorption (2012)
  • Author(s): T. Akiyama, Y. Saito, K. Nakamura, T. Ito
  • Journal Title: Surf. Sci Volume: 606 Pages: 221-225
  • Peer Reviewed
• [Journal Article] Reconstructions on AlN polar surfaces under hydrogen rich conditions (2012)
  • Author(s): Toru Akiyama, Daisuke Obara, Kohji Nakamura, Tomonori Ito
  • Journal Title: Japanese Journal of Applied Physics Volume: 51 Issue: 1R Pages: 018001-018001
  • DOI: 10.1143/jjap.51.018001
  • NAID: 210000140036
  • Peer Reviewed
• [Journal Article] Stability of nitrogen incorporated Al_2O_3 surfaces : Formation of AlN layers by oxygen desorption (2012)
  • Author(s): Toru Akiyama, Yasutaka Saito, Kohji Nakamura, Tomonori Ito
  • Journal Title: Surface Science Volume: 606 Issue: 3-4 Pages: 221-225
  • DOI: 10.1016/j.susc.2011.09.018
  • Peer Reviewed
• [Journal Article] Effects of interlayer interactions on structural stability and electronic structures of twin boundary interfaces in CaCO_3 calcite (2012)
  • Author(s): Toru Akiyama, Kohji Nakamura, Tomonori Ito
  • Journal Title: Journal of Physical Chemistry Volume: 116 Issue: 1 Pages: 987-993
  • DOI: 10.1021/jp209647b
  • Peer Reviewed
• [Journal Article] Ab initio-based approach to GaN surfaces : Reconstruction, adsorption, and incorporation (2012)
  • Author(s): Tomonori Ito, Toru Akiyama, Kohji Nakamura
  • Journal Title: Semiconductor Science and Technology Volume: 27 Issue: 2 Pages: 024010-024010
  • DOI: 10.1088/0268-1242/27/2/024010
  • Peer Reviewed
• [Journal Article] Atomic and electronic structure of CaCO_3 surfaces (2011)
  • Author(s): T. Akiyama, K. Nakamura, T. Ito
  • Journal Title: Phys. Rev Volume: 84
  • Peer Reviewed
• [Journal Article] エピタキシャル成長素過程への量子論的アプローチ (2011)
  • Author(s): 秋山亨, 中村浩次, 伊藤智徳
  • Journal Title: 日本結晶成長学会誌 Volume: 38 Pages: 137-143
  • Peer Reviewed
• [Journal Article] Stability of carbon incorporated semipolar GaN(1-101) surfaces (2011)
  • Author(s): T. Akiyama, K. Nakamura, T. Ito
  • Journal Title: Jpn. J. Appl. Phys Volume: 50
  • Peer Reviewed
• [Journal Article] Empirical potential approach to the epitaxial relationship between AlN thin films and Si(001) substrates (2011)
  • Author(s): T. Ito, H. Nakano, T. Akiyama, K. Nakamura
  • Journal Title: Phys. Status Solidi C Volume: 8 Pages: 1569-1572
  • Peer Reviewed
• [Journal Article] Theoretical investigations for the polytypism in semiconductors (2011)
  • Author(s): T. Ito, T. Kondo, T. Akiyama, K. Nakamura
  • Journal Title: J. Cryst. Growth Volume: 318 Pages: 141-144
  • Peer Reviewed
• [Journal Article] Ab initio-based approach to adsorption-desorption behavior on the InAs(111) A surface heteroepitaxially grown on GaAs substrate (2011)
  • Author(s): T. Ito, N. Ishimure, T. Akiyama, K. Nakamura
  • Journal Title: J. Cryst. Growth Volume: 318 Pages: 72-75
  • Peer Reviewed
• [Journal Article] Ab initio-based approach to the adsorption behavior fo In on InAs wetting layer grown on GaAs(001) substrate (2011)
  • Author(s): K. Ogasawara, T. Ito, T. Akiyama, K. Nakamura
  • Journal Title: Phys. Status Solidi C Volume: 8 Pages: 245-247
  • Peer Reviewed
• [Journal Article] Empirical potential approach to the epitaxial relationship between AlN thin films and Si (001) substrates (2011)
  • Author(s): Tomonori Ito, Haruo Nakano, Toru Akiyama, Kohji Nakamura
  • Journal Title: Physica Status Solidi C Volume: 8 Issue: 5 Pages: 1569-1572
  • DOI: 10.1002/pssc.201000865
  • Peer Reviewed
• [Journal Article] Theoretical Investigation of Effect of Side Facets on Adsorption-Desorption Behaviors of In and P Atoms at Top Layers in InP Nanowires (2011)
  • Author(s): 山下智樹、秋山亨、中村浩次、伊藤智徳
  • Journal Title: Japanese Journal of Applied Physics Volume: 50 Issue: 5R Pages: 055001-055001
  • DOI: 10.1143/jjap.50.055001
  • NAID: 40018812638
  • Peer Reviewed
• [Journal Article] Stability of carbon incorporated semipolar GaN (1-101) surfaces (2011)
  • Author(s): Toru Akiyama, Kohji Nakamura Tomonori Ito
  • Journal Title: Japanese Journal of Applied Physics Volume: 50 Issue: 8R Pages: 080216-080216
  • DOI: 10.1143/jjap.50.080216
  • Peer Reviewed
• [Journal Article] Atomic and electronic structure of CaCO_3 surfaces (2011)
  • Author(s): Toru Akiyama, Kohji Nakamura Tomonori Ito
  • Journal Title: Physical Review B Volume: 84 Issue: 8
  • DOI: 10.1103/physrevb.84.085428
  • Peer Reviewed
• [Journal Article] Ab initio-based approach to the adsorption behavior to In on InAs wetting layer grown on GaAs(001) substrate (2011)
  • Author(s): Kosuke Ogasawara, Toru Akiyama, Kohji Nakamura, Tomonori Ito
  • Journal Title: Physica Status Solidi C Volume: 8 Pages: 245-247
  • Peer Reviewed
• [Journal Article] Theoretical investigations for the polytypism in silicon carbide : Contribution of the vacancy formation (2011)
  • Author(s): Tomonori Ito, Tomoyuki Kondo, Toru Akiyama, Kohji Nakamura
  • Journal Title: Physica Status Solidi C Volume: 8 Pages: 583-585
  • Peer Reviewed
• [Journal Article] Band alignment tuning in twin-plane superlattice of semiconductor nanowires (2010)
  • Author(s): T. Akiyama, Y. Saito, K. Nakamura, T. Ito
  • Journal Title: Nano Lett Volume: 10 Pages: 4614-4618
  • Peer Reviewed
• [Journal Article] Ab initio-based approach to structural modulation of AlN on 4H-SiC(11-20) during MBE growth (2010)
  • Author(s): T. Ito, T. Ito, T. Akiyama, K. Nakamura
  • Journal Title: Physica E Volume: 42 Pages: 2788-2791
  • Peer Reviewed
• [Journal Article] Theoretical investigation for the strain effect on surface structure of InAs(111) A (2010)
  • Author(s): N. Ishimure, T. Akiyama, K. Nakamura, T. Ito
  • Journal Title: Physica E Volume: 42 Pages: 2731-2734
  • Peer Reviewed
• [Journal Article] Surface reconstruction and magnesium incorporation on semipolar GaN(1-101) surfaces (2010)
  • Author(s): T. Akiyama, Y. Saito, K. Nakamura, T. Ito
  • Journal Title: Phys. Rev. B Volume: 81
  • Peer Reviewed
• [Journal Article] Theoretical investigations of polytypism in AlN thin films (2010)
  • Author(s): T. Ito, T. Ito, D. Ammi, T. Akiyama, K. Nakamura
  • Journal Title: Phys. Status Solidi A Volume: 207 Pages: 1431-1434
  • Peer Reviewed
• [Journal Article] Ab initio-based Monte Carlo simulation study for the structural stability of AlN grown on 4H-SiC(11-20) (2010)
  • Author(s): T. Ito, T. Ito, T. Akiyama, K. Nakamura
  • Journal Title: e-J. Sur. Sci. Nanotchnology Volume: 8 Pages: 52-56
  • NAID: 130004934094
  • Peer Reviewed
• [Journal Article] Effects of facet orientation on relative stability between zinc blende and wurtzite structures in III-V nanowires (2010)
  • Author(s): Tomoki Yamashita, Toru Akiyama, Kohji Nakamura, Tomonori Ito
  • Journal Title: Japanese Journal of Applied Physics Volume: 49
  • Peer Reviewed
• [Journal Article] Surface reconstruction and magnesium incorporation on semipolar GaN(1-101) surfaces (2010)
  • Author(s): Toru Akiyama, Daisuke Ammi, Kohji Nakamura, Tomonori Ito
  • Journal Title: Physical Review B Volume: 81
  • Peer Reviewed
• [Journal Article] Theoretical investigation on the structural stability of GaAs nanowires with two different types of facets (2010)
  • Author(s): Tomoki Yamashita, Toru Akiyama, Kohji Nakamura, Tomonori Ito
  • Journal Title: Physica E Volume: 42 Pages: 2727-2730
  • Peer Reviewed
• [Journal Article] Theoretical investigation for the strain effect on surface structure of InAs(111)A (2010)
  • Author(s): Naoki Ishimure, Toru Akiyama, Kohji Nakamura, Tomonori Ito
  • Journal Title: Physica E Volume: 42 Pages: 2731-2734
  • Peer Reviewed
• [Journal Article] Ab initio-based approach to structural modulation of AlN on 4H-SiC (11-20) during MBE growth (2010)
  • Author(s): Tomonori Ito, Takumi Ito, Toru Akiyama, Kohji Nakamura
  • Journal Title: Physica E Volume: 42 Pages: 2788-2791
  • Peer Reviewed
• [Journal Article] Band alignment tuning in twin-plane superlattice of semiconductor nanowires (2010)
  • Author(s): Toru Akiyama, Tomoki Yamashita, Kohji Nakamura, Tomonori Ito
  • Journal Title: Nano Letters Volume: 10 Pages: 4614-4618
  • Peer Reviewed
• [Journal Article] A first-principles surface-phase diagram study for Si-adsorption processes on GaAs(111)A surface under low As-pressure condition (2010)
  • Author(s): Toru Akiyama, Hiroaki Tatematsu, Kohji Nakamura, Tomonori Ito
  • Journal Title: Surface Science 604 Pages: 171-174
  • Peer Reviewed
• [Journal Article] Surface reconstructions on GaN and InN semipolar (20-21) surfaces (2010)
  • Author(s): Tomoki Yamashita, Toru Akiyama, Kohji Nakamura, Tomonori Ito
  • Journal Title: Japanese Journal of Applied Physics 49
  • Peer Reviewed
• [Journal Article] Ab initio-based Monte Carlo simulation study for the structural stability of AlN grown on 4H-SiC (11-20) (2010)
  • Author(s): Tomonori Ito, Takumi Ito, Toru Akiyama, Kohji Nakamura
  • Journal Title: e-Journal of Surface Science and Nanotethnology 8 Pages: 52-56
  • NAID: 130004934094
  • Peer Reviewed
• [Journal Article] Stability and indium incorporation on In_<0.25>Ga_<0.75>N surfaces under growth conditions : First-principles calculations (2010)
  • Author(s): Toru Akiyama, Tomoki Yamashita, Kohji Nakamura, Tomonori Ito
  • Journal Title: Japanese Journal of Applied Physics 49
  • Peer Reviewed
• [Journal Article] Role of Au/GaAs (111) interface on the wurtzite-structure formation during GaAs nanowire grown by vapor-liquid-solid mechanism (2009)
  • Author(s): Toru Akiyama, Yuya Haneda, Kohji Nakamura, Tomonori Ito
  • Journal Title: Physical Review B 79
  • Peer Reviewed
• [Journal Article] An ab initio-based approach to the stability of GaN(0001) surfaces under Ga-rich conditions (2009)
  • Author(s): Tomonori Ito, Toru Akiyama, Kohji Nakamura
  • Journal Title: Journal of Crystal Growth 311 Pages: 3093-3096
  • NAID: 120002223761
  • Peer Reviewed
• [Journal Article] Theoretical approach to structural stability of c-GaN : How to grow cubic GaN (2009)
  • Author(s): Yoshihiro Kangawa, Toru Akiyama, Tomonori Ito, Kenji Shiraishi, Koichi Kakimoto
  • Journal Title: Journal of Crystal Growth 311 Pages: 3106-3109
  • Peer Reviewed
• [Journal Article] Structures and electronic states of Mg-incorporated InN surfaces : First-principles pseudopotential calculations (2009)
  • Author(s): Toru Akiyama, Kohji Nakamura, Tomonori Ito, J.-H.Song, A.J.Freeman
  • Journal Title: Physical Review B 80
  • Peer Reviewed
• [Journal Article] Reconstructions of GaN and InN semipolar (10-1-1) surfaces (2009)
  • Author(s): Toru Akiyama, Daisuke Ammi, Kohji Nakamura, Tomonori Ito
  • Journal Title: Japanese Journal of Applied Physics 48
  • NAID: 40016796017
  • Peer Reviewed
• [Journal Article] Stability of magnesium-incorporated semipolar (10-1-1) surfaces (2009)
  • Author(s): Toru Akiyama, Daisuke Ammi, Kohji Nakamura, Tomonori Ito
  • Journal Title: Japanese Journal of Applied Physics 48
  • Peer Reviewed
• [Journal Article] Theoretical investigation on the structural stability of GaP nanowires with {111} facets (2009)
  • Author(s): Tomoki Yamashita, Toru Akiyama, Kohji Nakamura, Tomonori Ito
  • Journal Title: Applied Surface Science 256 Pages: 1054-1057
  • Peer Reviewed
• [Journal Article] Systematic theoretical investigation for adsorption behavior of Al and N atoms on 4H-SiC (11-20) surfaces (2009)
  • Author(s): Takumi Ito, Toru Akiyama, Kohji Nakamura, Tomonori Ito
  • Journal Title: Applied Surface Science 256 Pages: 1164-1167
  • NAID: 120002223755
  • Peer Reviewed
• [Journal Article] Systematic theoretical investigations for contribution of lattice constraint to novel atomic arrangements in alloy semiconductor thin films (2009)
  • Author(s): Tomonori Ito, Naoki Takasu, Toru Akiyama, Kohji Nakamura
  • Journal Title: Applied Surface Science 256 Pages: 1218-1221
  • NAID: 120002223760
  • Peer Reviewed
• [Journal Article] Surface reconstructions on GaN and InN semipolar (11-22) surfaces (2009)
  • Author(s): Tomoki Yamashita, Toru Akiyama, Kohji Nakamura, Tomonori Ito
  • Journal Title: Japanese Journal of Applied Physics 48
  • NAID: 40016890443
  • Peer Reviewed
• [Journal Article] Ab initio-based study for adatom kinetics on semipolar GaN (11-22) surfaces (2009)
  • Author(s): Toru Akiyama, Tomoki Yamashita, Kohji Nakamura, Tomonori Ito
  • Journal Title: Japanese Journal of Applied Physics 48
  • NAID: 40016890460
  • Peer Reviewed
• [Presentation] BNの構造多形に関する簡単な理解 (2012)
  • Author(s): 伊藤智徳, 秋山亨, 中村浩次
  • Organizer: 2012年春季第59回応用物理学関係連合講演会
  • Place of Presentation: 東京
  • Year and Date: 2012-03-16
• [Presentation] InP(111)A面上における成長初期過程のモンテカルロシミュレーション (2012)
  • Author(s): 山下智樹, 秋山亨, 中村浩次, 伊藤智徳
  • Organizer: 2012年春季第59回応用物理学関係連合講演会
  • Place of Presentation: 東京
  • Year and Date: 2012-03-16
• [Presentation] GaAs(001)表面におけるBi原子の吸着に関する理論的研究 (2012)
  • Author(s): 村瀬功, 秋山亨, 中村浩次, 伊藤智徳
  • Organizer: 2012年春季第59回応用物理学関係連合講演会
  • Place of Presentation: 東京
  • Year and Date: 2012-03-16
• [Presentation] α-Al_2O_3表面における窒化初期過程に関する理論検討 (2012)
  • Author(s): 秋山亨,斉藤康高,伊藤智徳,中村浩次
  • Organizer: 2012年春季第59回応用物理学関係連合講演会
  • Place of Presentation: 東京
  • Year and Date: 2012-03-15
• [Presentation] 計算科学から見た半導体ナノワイヤの形成機構 (2012)
  • Author(s): 秋山亨
  • Organizer: 2012年春季第59回応用物理学関係連合講演会
  • Place of Presentation: 東京
  • Year and Date: 2012-03-15
• [Presentation] 計算科学から見た半導体ナノワイヤの形成機構 (2012)
  • Author(s): 秋山亨
  • Organizer: 2012年春季第59回応用物理学関係連合講演会
  • Place of Presentation: 東京(招待講演)
  • Year and Date: 2012-03-15
• [Presentation] A simple approach to the polytypism in boron nitride (2012)
  • Author(s): Tomonori Ito, Toru Akiyama, Kohji Nakamura
  • Organizer: American Physical Society March Meeting 2012
  • Place of Presentation: Boston
  • Year and Date: 2012-02-29
• [Presentation] Ab initio-based approach to elemental growth processes of InAs wetting layer on GaAs(001) (2011)
  • Author(s): T. Ito, T. Sugitani, T. Akiyama, K. Nakamura
  • Organizer: 2nd Nano Today Conference
  • Place of Presentation: Kohara
  • Year and Date: 2011-12-13
• [Presentation] Theoretical investigation for nitrogenincorporatedα-Al_2O_3 surfaces (2011)
  • Author(s): Y. Saito, T. Akiyama, K. Nakamura, T. Ito
  • Organizer: 6th International Symposium on Surface Science
  • Place of Presentation: 東京
  • Year and Date: 2011-12-13
• [Presentation] Ab initio-based approach to elemental formation processes of InAs wetting layer on GaAs(001) (2011)
  • Author(s): Tomonori Ito, Tatsuhiko Sugitani, Toru Akiyama, Kohji Nakamura
  • Organizer: 2^<nd> Nano Today Conference
  • Place of Presentation: Kohara
  • Year and Date: 2011-12-13
• [Presentation] Atomic and electronic structures of calcium carbonate surfaces : A first-principles study (2011)
  • Author(s): Toru Akiyama, Kohji Nakamura, Tomonori Ito
  • Organizer: 6^<th> International Symposium on Surface Science
  • Place of Presentation: 東京
  • Year and Date: 2011-12-13
• [Presentation] Theoretical investigation for nitrogen-incorporated α-Al_2O_3 surfaces (2011)
  • Author(s): Yasutaka Saito, Toru Akiyama, Kohji Nakamura, Tomonori Ito
  • Organizer: 6^<th> International Symposium on Surface Science
  • Place of Presentation: 東京
  • Year and Date: 2011-12-13
• [Presentation] 計算材料科学から見た窒化物半導体 (2011)
  • Author(s): 伊藤智徳
  • Organizer: 阿南高等工業専門学校第16回寄附講座セミナー
  • Place of Presentation: 阿南(招待講演)
  • Year and Date: 2011-11-10
• [Presentation] Ab initobased investigations for In adatom on the InAs(111) A surface (2011)
  • Author(s): T. Ito, T. Akiyama, K. Nakamura
  • Organizer: International Workshop on Atomic-Scale Manipulation and Spectroscopy of Surface and Nanostructures
  • Place of Presentation: 厚木
  • Year and Date: 2011-10-13
• [Presentation] Ab initio-based investigations for In adatom on the InAs(111)A surface (2011)
  • Author(s): Tomonori Ito, Toru Akiyama, Kohji Nakamura
  • Organizer: International Workshop on Atomic-Scale Manipulation and Spectroscopy of Surfaces and Nanostructures
  • Place of Presentation: 厚木(招待講演)
  • Year and Date: 2011-10-13
• [Presentation] GaAs(001)上InAsぬれ層形成過程に関する一考察 (2011)
  • Author(s): 伊藤智徳,秋山亨,中村浩次
  • Organizer: 2011年秋季第72回応用物理学会学術講演会
  • Place of Presentation: 山形
  • Year and Date: 2011-09-02
• [Presentation] α-Al_2O_3(1-102)表面における窒化に関する量子論的アプローチ (2011)
  • Author(s): 斉藤康高, 秋山亨, 中村浩次, 伊藤智徳
  • Organizer: 2011年秋季第72回応用物理学会学術講演会
  • Place of Presentation: 山形
  • Year and Date: 2011-09-02
• [Presentation] α-Al_2O_3(0001)表面での窒素取り込みにおける反応種依存性の理論検討 (2011)
  • Author(s): 秋山亨, 中村浩次, 伊藤智徳
  • Organizer: 2011年秋季第72回応用物理学会学術講演会
  • Place of Presentation: 山形
  • Year and Date: 2011-09-02
• [Presentation] GaAsナノワイヤ成長条件下におけるGaAs(111)B表面再構成の理論的検討 (2011)
  • Author(s): 村瀬功, 秋山亨, 中村浩次, 伊藤智徳
  • Organizer: 2011年秋季第72回応用物理学会学術講演会
  • Place of Presentation: 山形
  • Year and Date: 2011-09-02
• [Presentation] GaAs(001)基板上InAs表面におけるIn原子のマイグレーションに対するモンテカルロシミュレーション (2011)
  • Author(s): 杉谷龍彦, 秋山亨, 中村浩次, 伊藤智徳
  • Organizer: 2011年秋季第72回応用物理学会学術講演会
  • Place of Presentation: 山形
  • Year and Date: 2011-09-02
• [Presentation] InPナノワイヤにおけるIn原子の表面拡散に関する理論的研究 (2011)
  • Author(s): 山下智樹, 秋山亨, 中村浩次, 伊藤智徳
  • Organizer: 2011年秋季第72回応用物理学会学術講演会
  • Place of Presentation: 山形
  • Year and Date: 2011-08-31
• [Presentation] 化合物半導体の原子レベル表面反応機構 (2011)
  • Author(s): 伊藤智徳
  • Organizer: 2011年秋季第72回応用物理学会学術講演会
  • Place of Presentation: 山形
  • Year and Date: 2011-08-29
• [Presentation] 化合物半導体の原子レベル表面反応機構 (2011)
  • Author(s): 伊藤智徳
  • Organizer: 2011年秋季第72回応用物理学会学術講演会
  • Place of Presentation: 山形(招待講演)
  • Year and Date: 2011-08-29
• [Presentation] GaN表面状態図から見た再構成,H吸着,Mg取り込み (2011)
  • Author(s): 伊藤智徳
  • Organizer: 東北大学金属材料研究所共同利用研究会「窒化物半導体の高品質結晶成長とその素子応用」
  • Place of Presentation: 仙台
  • Year and Date: 2011-08-08
• [Presentation] Growth processes of InP with wurtzite and zinc blende structures on (111) A surface (2011)
  • Author(s): Tomoki Yamashita, Toru Akiyama, Kohji Nakamura, Tomonori Ito
  • Organizer: International Conference on Materials for Advanced Technologies
  • Place of Presentation: Singapore
  • Year and Date: 2011-06-29
• [Presentation] Ab inito-based approach to elemental growth process of In adatom on the InAs wetting layer grown on GaAs (2011)
  • Author(s): T. Ito, K. Ogasawara, T. Sugitani, T. Akiyama, K. Nakamura
  • Organizer: International Conference on Materials for Advanced Technologies
  • Place of Presentation: Singapore
  • Year and Date: 2011-06-28
• [Presentation] Ab initio-based approach to elemental growth process of In adatom on the InAs wetting layer grown on GaAs (2011)
  • Author(s): Tomonori Ito, Kosuke Ogasawara, Tatsuhiko Sugitani, Toru Akiyama, Kohji Nakamura
  • Organizer: International Conference on Materials for Advanced Technologies
  • Place of Presentation: Singapore
  • Year and Date: 2011-06-28
• [Presentation] A simple approach to the polytypism in SiC (2011)
  • Author(s): Tomonori Ito, Toru Akiyama, Kohji Nakamura
  • Organizer: International Conference on Materials for Advanced Technologies
  • Place of Presentation: Singapore
  • Year and Date: 2011-06-27
• [Presentation] Ab initio-based approach to elemental nitridation process of α-Al_2O_3 (2011)
  • Author(s): Yasutaka Saito, Toru Akiyama, Kohji Nakamura, Tomonori Ito
  • Organizer: International Conference on Materials for Advanced Technologies
  • Place of Presentation: Singapore
  • Year and Date: 2011-06-27
• [Presentation] Structural stability and electronic properties in Al_2O_3 and CrO_3 mixed crystals" (2011)
  • Author(s): Yukie Kitaoka, Kohji Nakamura, Toru Akiyama, Tomonori Ito
  • Organizer: International Conference on Materials for Advanced Technologies
  • Place of Presentation: Singapore
  • Year and Date: 2011-06-27
• [Presentation] Structural stability of Mn-doped GaInAs and GaInN alloys (2011)
  • Author(s): Masahiro Miyake, Kohji Nakamura, Toru Akiyama, Tomonori Ito
  • Organizer: International Conference on Materials for Advanced Technologies
  • Place of Presentation: Singapore
  • Year and Date: 2011-06-27
• [Presentation] SiCの構造多形に関する一考察 (2011)
  • Author(s): 伊藤智徳, 秋山亨, 中村浩次
  • Organizer: 結晶加工と評価技術第145委員会第126回研究会
  • Place of Presentation: 東京(招待講演)
  • Year and Date: 2011-06-16
• [Presentation] α-Al_2O_3表面上の窒素吸着に関する量子論的アプローチ (2011)
  • Author(s): 斉藤康高,秋山亨,伊藤智徳,中村浩次
  • Organizer: 2011年春季第58回応用物理学関係連合講演会
  • Place of Presentation: 厚木
  • Year and Date: 2011-03-24
• [Presentation] SiCの構造多形に関する簡単な理解 (2011)
  • Author(s): 伊藤智徳, 秋山亨, 中村浩次
  • Organizer: 2011年春季第58回応用物理学関係連合講演会
  • Place of Presentation: 厚木
  • Year and Date: 2011-03-24
• [Presentation] α-Al_2O_3(0001)表面上の窒素吸着に関する量子論的アプローチ (2011)
  • Author(s): 斉藤康高, 秋山亨, 中村浩次, 伊藤智徳
  • Organizer: 2011年春季第58回応用物理学関係連合講演会
  • Place of Presentation: 厚木
  • Year and Date: 2011-03-24
• [Presentation] InP(111)A面上における成長初期過程に対するモンテカルロシミュレーション (2011)
  • Author(s): 山下智樹, 秋山亨, 中村浩次, 伊藤智徳
  • Organizer: 2011年春季第58回応用物理学関係連合講演会
  • Place of Presentation: 厚木
  • Year and Date: 2011-03-24
• [Presentation] 半極性GaN(1-101)表面での炭素取り込みに関する理論的検討 (2011)
  • Author(s): 秋山亨, 山下智樹, 中村浩次, 伊藤智徳
  • Organizer: 2011年春季第58回応用物理学関係連合講演会
  • Place of Presentation: 厚木
  • Year and Date: 2011-03-24
• [Presentation] 窒化物半導体における構造安定性とエピタキシャル関係 (2011)
  • Author(s): 伊藤智徳
  • Organizer: 東北大学金属材料研究所共同利用研究会「窒化物半導体の高品質結晶成長とその素子応用」
  • Place of Presentation: 仙台
  • Year and Date: 2011-01-18
• [Presentation] Theoretical approach to band alignment of twin-plane superlattice in semiconductor nanowires (2010)
  • Author(s): Toru Akiyama, Tomoki Yamashita, Kohji Nakamura, Tomonori Ito
  • Organizer: 2010 MRS Fall Meeting
  • Place of Presentation: Boston
  • Year and Date: 2010-12-01
• [Presentation] 化合物半導体の構造多形に関する一考察 (2010)
  • Author(s): 伊藤智徳
  • Organizer: 東北大学電気通信研究所共同プロジェクト研究会「ナノスケールのゆらぎ・電子相関制御に基づく新規ナノデバイス」
  • Place of Presentation: 仙台
  • Year and Date: 2010-11-26
• [Presentation] InAs量子ドット形成過程に関する一考察 (2010)
  • Author(s): 伊藤智徳
  • Organizer: 東北大学電気通信研究所共同プロジェクト研究会「ナノスケールのゆらぎ・電子相関制御に基づく新規ナノデバイス」
  • Place of Presentation: 仙台
  • Year and Date: 2010-10-21
• [Presentation] GaAs(001)基板上InAs(111) A表面に関する理論的検討 (2010)
  • Author(s): 伊藤智徳,伊藤巧,秋山亨,中村浩次
  • Organizer: 2010年秋季第71回応用物理学会学術講演会
  • Place of Presentation: 長崎
  • Year and Date: 2010-09-14
• [Presentation] GaAs基板上InAs(111)A表面に関する理論的検討 (2010)
  • Author(s): 伊藤智徳, 伊藤巧, 秋山亨, 中村浩次
  • Organizer: 2010年秋季第71回応用物理学会学術講演会
  • Place of Presentation: 長崎
  • Year and Date: 2010-09-14
• [Presentation] InP(111)A面上における双晶形成過程に対する理論的研究 (2010)
  • Author(s): 山下智樹, 秋山亨, 中村浩次, 伊藤智徳
  • Organizer: 2010年秋季第71回応用物理学会学術講演会
  • Place of Presentation: 長崎
  • Year and Date: 2010-09-14
• [Presentation] GaAs(001)基板上のInAs表面上のIn吸着原子の振る舞いに対する量子論的アプローチ (2010)
  • Author(s): 小笠原孝介, 秋山亨, 中村浩次, 伊藤智徳
  • Organizer: 2010年秋季第71回応用物理学会学術講演会
  • Place of Presentation: 長崎
  • Year and Date: 2010-09-14
• [Presentation] 半導体ナノワイヤでの双晶面超格子におけるバンド配列のナノワイヤ径依存性 (2010)
  • Author(s): 秋山亨, 山下智樹, 中村浩次, 伊藤智徳
  • Organizer: 2010年秋季第71回応用物理学会学術講演会
  • Place of Presentation: 長崎
  • Year and Date: 2010-09-14
• [Presentation] Theoretical investigations for the polytypism in semiconductors (2010)
  • Author(s): Tomonori Ito, Tomoyuki Kondo, Toru Akiyama, Kohji Nakamura
  • Organizer: The 16^<th> International Conference on Crystal Growth
  • Place of Presentation: Beijing
  • Year and Date: 2010-08-12
• [Presentation] Stability of hydrogen on nonpolar and semipolar nitride surfaces : Role of surface orientation (2010)
  • Author(s): Toru Akiyama, Tomoki Yamashita, Kohji Nakamura, Tomonori Ito
  • Organizer: The 16^<th> International Conference on Crystal Growth
  • Place of Presentation: Beijing
  • Year and Date: 2010-08-10
• [Presentation] Ab initio-based approach to adsorption-desorption behavior on the InAs(111) A surface heteroepitaxially grown on GaAs substrate (2010)
  • Author(s): T. Ito, N. Ishimure, T. Akiyama, K. Nakamura
  • Organizer: 16th International Conference on Crystal Growth
  • Place of Presentation: Beijing
  • Year and Date: 2010-08-09
• [Presentation] Ab initio-based approach to adsorption-desorption behavior on the InAs(111)A surface heteroepitaxially grown on GaAs substrate (2010)
  • Author(s): Tomonori Ito, Naoki Ishimure, Toru Akiyama, Kohji Nakamura
  • Organizer: The 16^<th> International Conference on Crystal Growth
  • Place of Presentation: Beijing
  • Year and Date: 2010-08-09
• [Presentation] Surface reconstruction and magnesium incorporation on semipolar GaN(1-101) surfaces (2010)
  • Author(s): Toru Akiyama, Daisuke Ammi, Kohji Nakamura, Tomonori Ito
  • Organizer: The 16^<th> International Conference on Crystal Growth
  • Place of Presentation: Beijing
  • Year and Date: 2010-08-09
• [Presentation] Empirical potential approach to the epitaxial relationship between AlN thin films and Si(001) substrate (2010)
  • Author(s): T. Ito, H. Nakano, T. Akiyama, K. Nakamura
  • Organizer: 3rd International Symposium on Growth of III-Nitrides
  • Place of Presentation: Montpellier
  • Year and Date: 2010-07-05
• [Presentation] Empirical potential approach to the epitaxial relationship between AlN thin films and Si(001) substrates (2010)
  • Author(s): Tomonori Ito, Haruo Nakano, Toru Akiyama, Kohji Nakamura
  • Organizer: The 3^<rd> International Symposium on Growth of III-Nitrides
  • Place of Presentation: Montpellier
  • Year and Date: 2010-07-05
• [Presentation] Theoretical investigations for the polytypism in silicon carbide : Contribution of the vacancy formation (2010)
  • Author(s): Tomonori Ito, Tomoyuki Kondo, Toru Akiyama, Kohji Nakamura
  • Organizer: The 37^<th> International Conference on Compound Semiconductors
  • Place of Presentation: 高松
  • Year and Date: 2010-06-04
• [Presentation] Ab initio-based approach to the adsorption behavior for In on InAs wetting layer grown on GaAs(001) substrate (2010)
  • Author(s): K. Ogasawara, T. Akiyama, K. Nakamura, T. Ito
  • Organizer: 37th International Conference on Compound Semiconductors
  • Place of Presentation: 高松
  • Year and Date: 2010-05-31
• [Presentation] Theoretical investigation for twinning formation processes at top layer of InP nanowires (2010)
  • Author(s): Tomoki Yamashita, Toru Akiyama, Kohji Nakamura, Tomonori Ito
  • Organizer: The 37^<th> International Conference on Compound Semiconductors
  • Place of Presentation: 高松
  • Year and Date: 2010-05-31
• [Presentation] Ab initio-based approach to the adsorption behavior of In on InAs wetting layer grown on GaAs(001) substrate (2010)
  • Author(s): Kosuke Ogasawara, Toru Akiyama, Kohji Nakamura, Tomonori Ito
  • Organizer: The 37^<th> International Conference on Compound Semiconductors
  • Place of Presentation: 高松
  • Year and Date: 2010-05-31
• [Presentation] 窒化物半導体非極性面の表面構造への量子論的アプローチ (2010)
  • Author(s): 秋山亨,伊藤智徳,中村浩次
  • Organizer: 第2回窒化物半導体結晶成長講演会
  • Place of Presentation: 津
  • Year and Date: 2010-05-14
• [Presentation] 窒化物半導体非極性面の表面構造への量子論的アプローチ (2010)
  • Author(s): 秋山亨, 中村浩次, 伊藤智徳
  • Organizer: 第2回窒化物半導体結晶成長講演会
  • Place of Presentation: 津(招待講演)
  • Year and Date: 2010-05-14
• [Presentation] 半極性GaN表面上のMg吸着に関する理論的研究 (2010)
  • Author(s): 山下智樹, 安味大輔, 秋山亨, 中村浩次, 伊藤智徳
  • Organizer: 第2回窒化物半導体結晶成長講演会
  • Place of Presentation: 津
  • Year and Date: 2010-05-14
• [Presentation] 無極性および半極性IN_<0.25>Ga_<0.75>N表面構造安定性に対する量子論的アプローチ (2010)
  • Author(s): 秋山亨, 山下智樹, 中村浩次, 伊藤智徳
  • Organizer: 2010年春季第57回応用物理学関係連合講演会
  • Place of Presentation: 平塚
  • Year and Date: 2010-03-20
• [Presentation] GaAs基板上のInAs(001)ぬれ層表面構造に対する量子論的アプローチ (2010)
  • Author(s): 小笠原孝介, 秋山亨, 中村浩次, 伊藤智徳
  • Organizer: 2010年春季第57回応用物理学関係連合講演会
  • Place of Presentation: 平塚
  • Year and Date: 2010-03-20
• [Presentation] SiCの構造多形に関する理論的検討 (2010)
  • Author(s): 伊藤智徳, 近藤智之, 秋山亨, 中村浩次
  • Organizer: 2010年春季第57回応用物理学関係連合講演会
  • Place of Presentation: 平塚
  • Year and Date: 2010-03-20
• [Presentation] InPナノワイヤ成長面における双晶形成初期過程に対する理論的研究 (2010)
  • Author(s): 山下智樹, 秋山亨, 中村浩次, 伊藤智徳
  • Organizer: 2010年春季第57回応用物理学関係連合講演会
  • Place of Presentation: 平塚
  • Year and Date: 2010-03-17
• [Presentation] 半導体ナノワイヤにおける双晶面超格子のバンド配列に対する量子論的アプローチ (2010)
  • Author(s): 秋山亨, 山下智樹, 中村浩次, 伊藤智徳
  • Organizer: 2010年春季第57回応用物理学関係連合講演会
  • Place of Presentation: 平塚
  • Year and Date: 2010-03-17
• [Presentation] 窒化物半導体結晶成長への量子論的アプローチ (2009)
  • Author(s): 伊藤智徳
  • Organizer: 東北大学金属材料研究所共同利用研究会「窒化物半導体の高品質結晶成長とその素子応用」
  • Place of Presentation: 仙台
  • Year and Date: 2009-12-22
• [Presentation] Theoretical investigation on the facet formation processes in InP nanowires (2009)
  • Author(s): 山下智樹, 秋山亨, 中村浩次, 伊藤智徳
  • Organizer: 2009 MRS Fall Meeting
  • Place of Presentation: Boston
  • Year and Date: 2009-12-02
• [Presentation] Surface reconstructions and magnesium ioncorporation on semipolar GaN(10-1-1) surfaces (2009)
  • Author(s): 秋山亨, 安味大輔, 山下智樹, 中村浩次, 伊藤智徳
  • Organizer: 2009 MRS Fall Meeting
  • Place of Presentation: Boston
  • Year and Date: 2009-11-30
• [Presentation] GaN表面におけるMg原子吸着に関する理論的検討 (2009)
  • Author(s): 伊藤智徳, 安味大輔, 秋山亨, 中村浩次
  • Organizer: 第39回結晶成長国内会議
  • Place of Presentation: 名古屋
  • Year and Date: 2009-11-14
• [Presentation] 結晶成長過程の量子論と成膜プロセス (2009)
  • Author(s): 伊藤智徳
  • Organizer: 日本学術振興会薄膜第131委員会研究会
  • Place of Presentation: 東京
  • Year and Date: 2009-10-30
• [Presentation] 結晶成長過程の量子論と成膜プロセス (2009)
  • Author(s): 伊藤智徳
  • Organizer: 日本学術振興会薄膜第131委員会研究会「基礎から見直す薄膜のプロセス・機能」
  • Place of Presentation: 東京
  • Year and Date: 2009-10-30
• [Presentation] Theoretical investigations for polytypism in AlN thin films (2009)
  • Author(s): 伊藤智徳, 伊藤巧, 安味大輔, 秋山亨, 中村浩次
  • Organizer: 8^<th> International Conference on Nitride Semiconductors
  • Place of Presentation: Jeju
  • Year and Date: 2009-10-20
• [Presentation] Ab initio-based Monte Carlo simulation study for the structural stability of AIN grown on 4H-SiC(11-20) (2009)
  • Author(s): 伊藤智徳, 伊藤巧, 秋山亨, 中村浩次
  • Organizer: 10^<th> International Conference on Atomically Controlled Surface, Interfaces and Nanostructures
  • Place of Presentation: Granada
  • Year and Date: 2009-09-25
• [Presentation] 4H-SiC (11-20) 上AlN薄膜の構造多形に対する量子論的アプローチ (2009)
  • Author(s): 伊藤智徳, 伊藤巧, 秋山亨, 中村浩次
  • Organizer: 2009年秋季第70回応用物理学会学術講演会
  • Place of Presentation: 富山
  • Year and Date: 2009-09-11
• [Presentation] 半極性GaN(10-1-1)表面におけるMg原子の吸着に関する理論的検討 (2009)
  • Author(s): 安味大輔, 秋山亨, 中村浩次, 伊藤智徳
  • Organizer: 2009年秋季第70回応用物理学会学術講演会
  • Place of Presentation: 富山
  • Year and Date: 2009-09-11
• [Presentation] GaAs基板上のInAs(111)Aぬれ層表面における表面再構成に対する量子論的アプローチ (2009)
  • Author(s): 石牟禮直生, 秋山亨, 中村浩次, 伊藤智徳
  • Organizer: 2009年秋季第70回応用物理学会学術講演会
  • Place of Presentation: 富山
  • Year and Date: 2009-09-11
• [Presentation] 無極性および半極性InNにおける表面再構成の理論検討 (2009)
  • Author(s): 秋山亨, 中村浩次, 伊藤智徳
  • Organizer: 2009年秋季第70回応用物理学会学術講演会
  • Place of Presentation: 富山
  • Year and Date: 2009-09-11
• [Presentation] InPナノワイヤにおけるファセット形成過程に関する理論検討 (2009)
  • Author(s): 山下智樹, 秋山亨, 中村浩次, 伊藤智徳
  • Organizer: 2009年秋季第70回応用物理学会学術講演会
  • Place of Presentation: 富山
  • Year and Date: 2009-09-11
• [Presentation] An ab initio study for electronic states induced by In adatom on InAs (111) A surface (2009)
  • Author(s): Toru Akiyama, Kohji Nakamura, Tomonori Ito, Kiyoshi Kanisawa
  • Organizer: 26^<th> European Conference on Surface Science
  • Place of Presentation: Palma
  • Year and Date: 2009-08-31
• [Presentation] Ab initio-based approach to surface phase diagram calculation for compound semiconductors and its application to epitaxial growth (2009)
  • Author(s): T. Ito, T. Akiyama, K. Nakamura
  • Organizer: 2nd International Workshop on Epitaxial Growth and Fundamental Properties of Smiconductor nanostructures
  • Place of Presentation: 阿南
  • Year and Date: 2009-08-12
• [Presentation] Ab initio-based approach to surface phase diagram calculation for compound semiconductors and its application to epitaxial growth (2009)
  • Author(s): 伊藤智徳, 秋山亨, 中村浩次
  • Organizer: 2^<nd> International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures
  • Place of Presentation: 阿南
  • Year and Date: 2009-08-12
• [Presentation] Theoretical investigation on the structural stability of III-V nanowires with two different types of facets (2009)
  • Author(s): 山下智樹, 秋山亨, 中村浩次, 伊藤智徳
  • Organizer: 2^<nd> International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures
  • Place of Presentation: 阿南
  • Year and Date: 2009-08-11
• [Presentation] Theoretical investigation for the strain effect on surface structure of InAs(111)A (2009)
  • Author(s): 石牟禮直生, 秋山亨, 中村浩次, 伊藤智徳
  • Organizer: The 14^<th> International Conference on Modulated Semiconductor Structures
  • Place of Presentation: 神戸
  • Year and Date: 2009-07-23
• [Presentation] Ab initio-based approach to structural modulation of AlN on 4H-SiC (11-20) during MBE growth (2009)
  • Author(s): 伊藤智徳, 伊藤巧, 秋山亨, 中村浩次
  • Organizer: The 14^<th> International Conference on Modulated Semiconductor Structures
  • Place of Presentation: 神戸
  • Year and Date: 2009-07-20
• [Presentation] Theoretical investigation on the structural stability of GaAs nanowires with two different types of facets (2009)
  • Author(s): 山下智樹, 秋山亨, 中村浩次, 伊藤智徳
  • Organizer: The 14^<th> International Conference on Modulated Semiconductor Structures
  • Place of Presentation: 神戸
  • Year and Date: 2009-07-20
• [Presentation] 第一原理計算によるSi酸化の界面反応 (2009)
  • Author(s): 秋山亨, 影島博之, 植松真司, 伊藤智徳
  • Organizer: 応用物理学会シリコンテクノロジー分科会研究会
  • Place of Presentation: 東京
  • Year and Date: 2009-06-19