Bond Engineering in Surface Structure and Nano-Structure Formation for Lattice Mismatch Systems
| Project/Area Number |
21560032
|
|---|
| Research Category |
Grant-in-Aid for Scientific Research (C)
|
| Allocation Type | Single-year Grants |
|---|
| Section | 一般 |
|---|
| Research Field |
Thin film/Surface and interfacial physical properties
|
|---|
| Research Institution | Mie University |
|---|
Principal Investigator |
ITO Tomonori 三重大学, 大学院・工学研究科, 教授 (80314136)
|
|---|
| Co-Investigator(Kenkyū-buntansha) |
AKIYAMA Toru 三重大学, 大学院・工学研究科, 助教 (40362363)
|
|---|
| Project Period (FY) |
2009 – 2011
|
| Project Status |
Completed (Fiscal Year 2011)
|
| Budget Amount *help |
¥4,810,000 (Direct Cost: ¥3,700,000、Indirect Cost: ¥1,110,000)
Fiscal Year 2011: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
Fiscal Year 2010: ¥910,000 (Direct Cost: ¥700,000、Indirect Cost: ¥210,000)
Fiscal Year 2009: ¥2,730,000 (Direct Cost: ¥2,100,000、Indirect Cost: ¥630,000)
|
|---|
| Keywords | 量子論的アプローチ / 格子不整合系 / 半導体表面構造 / 状態図 / 計算科学 / ナノ構造 / 成長機構 / ぬれ層表面 / 酸化物表面構造 / 量子ドット / ドーピング機構 / 状熊図 |
|---|
| Research Abstract |
Surface structures in lattice mismatch system such as InAs/GaAs are systematically investigated using our ab initio-based approach incorporating beam equivalent pressure and temperature. Adsorption-desorption behaviors of In and As are also clarified on the stable surfaces of InAs(111) and InAs(001) wetting layers under growth conditions. Using these results, elementary processes of nano-structure formation are discussed for stacking fault tetrahedron on InAs(111) and quantum dot on InAs(001) grown on GaAs substrate.
|
Report
(4 results)
Research Products
(132 results)
