Reactive Sputtering of Oxygen-Free Metal Nitride Films : Oxygen Incorporation and Effect on Electrical Properties
| Project/Area Number |
21560054
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Applied physics, general
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| Research Institution | Seikei University |
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Principal Investigator |
BABA Shigeru 成蹊大学, 理工学部, 教授 (80114619)
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| Co-Investigator(Kenkyū-buntansha) |
NAKANO Takeo 成蹊大学, 理工学部, 助教 (40237342)
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| Project Period (FY) |
2009 – 2011
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| Project Status |
Completed (Fiscal Year 2011)
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| Budget Amount *help |
¥4,680,000 (Direct Cost: ¥3,600,000、Indirect Cost: ¥1,080,000)
Fiscal Year 2011: ¥780,000 (Direct Cost: ¥600,000、Indirect Cost: ¥180,000)
Fiscal Year 2010: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
Fiscal Year 2009: ¥2,340,000 (Direct Cost: ¥1,800,000、Indirect Cost: ¥540,000)
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| Keywords | 反応性スパッタリング / 窒化チタン / パルススパッタリング / 高純度窒化物薄膜 / 大電力パルススパッタ / 高純度金属窒化物 / モード遷移 / 酸窒化物 / 窒化物薄膜 |
|---|
| Research Abstract |
Oxygen incorporation mechanism during reactive sputtering of titanium nitride was studied. Deposition condition was 2-5 W/cm^<2> and 0.05-0.2 nm/s. High purity films could be obtained in a partial pressure of less than 1×10^<-5> Pa of O_2.Introduction of O_2 beyond a partial pressure of 1×10^<-4> Pa traces of O was detected in the film. With increasing the discharge power, the gettering of residual O_2 by sputtered Ti atoms worked effectively to obtain nitride films of high purity. The pulse sputtering method was found very effective under the low power operation compared to the DC sputtering, but as the power was increased the efficiency of sputtering in the pulse method slowed down approaching to that of the DC sputtering.
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Report
(4 results)
Research Products
(52 results)
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[Journal Article]2009
Author(s)
馬場茂(分担執筆)
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Journal Title
実用薄膜プロセス-機能創生・応用展開- 第7章 力学薄膜の物性と構造(技術教育出版)
Pages: 219-235
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