The investigation of heat and mass transfer phenomenon for the GaAs single crystal growth solid-fluid interface control.
| Project/Area Number |
21560198
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Thermal engineering
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| Research Institution | Tomakomai National College of Technology |
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Principal Investigator |
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| Co-Investigator(Kenkyū-buntansha) |
CHIKAHISA Takemi 北海道大学, 大学院・工学研究院, 教授 (00155300)
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| Project Period (FY) |
2009 – 2011
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| Project Status |
Completed (Fiscal Year 2011)
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| Budget Amount *help |
¥4,810,000 (Direct Cost: ¥3,700,000、Indirect Cost: ¥1,110,000)
Fiscal Year 2011: ¥780,000 (Direct Cost: ¥600,000、Indirect Cost: ¥180,000)
Fiscal Year 2010: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2009: ¥2,730,000 (Direct Cost: ¥2,100,000、Indirect Cost: ¥630,000)
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| Keywords | 対流 / 化合物半導体 / 伝熱 / 結晶成長 / 数値計算 / 可視化 / 旋回流 |
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| Research Abstract |
The objective of this study is to clarify heat and mass transfer phenomenon in the GaAs single crystal growth. In order to clarify complicated flow phenomenon of the melt, flow observation of the melt in the crucible which was simulated the growth device was carried out using the visualization experiment equipment. And, thermal hydraulics numerical calculation in the growth device at various crystal diameters and crystal length was conducted and the elucidation of the actual phenomenon was tried by verifying in comparison with single crystal growth experimental result. Flow characteristic of the melt was able to be clarified to some extent by this study. It was also able to be clarified a heat and flow characteristic in the equipment at the different crystal diameters and crystal length.
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Report
(4 results)
Research Products
(15 results)
