| Project/Area Number |
21560320
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Kitami Institute of Technology |
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Principal Investigator |
TAKEYAMA Mayumi 北見工業大学, 工学部・電気電子工学科, 准教授 (80236512)
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| Co-Investigator(Kenkyū-buntansha) |
NOYA Atsushi 北見工業大学, 工学部, 教授 (60133807)
MACHIDA Hideaki 気相成長(株), 代表取締役 (30535670)
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| Project Period (FY) |
2009 – 2011
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| Project Status |
Completed (Fiscal Year 2011)
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| Budget Amount *help |
¥4,810,000 (Direct Cost: ¥3,700,000、Indirect Cost: ¥1,110,000)
Fiscal Year 2011: ¥910,000 (Direct Cost: ¥700,000、Indirect Cost: ¥210,000)
Fiscal Year 2010: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2009: ¥2,470,000 (Direct Cost: ¥1,900,000、Indirect Cost: ¥570,000)
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| Keywords | ナノ材料 / ホウ化物 / 抵抗率 / ナノコンポジット / Zr-B |
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| Research Abstract |
We have examined characteristics of ZrB_x thin films with off-stoichiometric compositions from the ZrB_2 compound as an application to Cu interconnects as a metal capping layer. The Zr-rich ZrB_x films containing oxygen show the dominant ZrB_2 phase and good properties as a metal capping layer. The films also show good barrier properties against Cu diffusion and/or reaction with Cu after annealing up to 500 °C for 30min. In the application of Zr-rich ZrB_x films as a metallic capping layer, it is revealed that the oxygen incorporation in proper content play an important role for stabilizing the ZrB_2 phase in the films. In addition to this, good barrier properties are characteristics of the ZrBx thin films for Cu interconnects in Si-LSI technology. From these results, the ZrBx thin films with off-stoichiometric compositions from the ZrB_2 compound are one of the promising materials as a metal capping layer also a diffusion barrier for Cu interconnects.
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