| Project/Area Number |
21560321
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Hirosaki University |
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Principal Investigator |
ENTA Yoshiharu 弘前大学, 大学院・理工学研究科, 准教授 (20232986)
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| Co-Investigator(Kenkyū-buntansha) |
SAKISAKA Yasuo 弘前大学, 大学院・理工学研究科, 教授 (80108977)
加藤 博雄 弘前大学, 大学院・理工学研究科, 教授 (20152738)
手塚 泰久 弘前大学, 大学院・理工学研究科, 教授 (20236970)
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| Project Period (FY) |
2009 – 2011
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| Project Status |
Completed (Fiscal Year 2011)
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| Budget Amount *help |
¥4,810,000 (Direct Cost: ¥3,700,000、Indirect Cost: ¥1,110,000)
Fiscal Year 2011: ¥650,000 (Direct Cost: ¥500,000、Indirect Cost: ¥150,000)
Fiscal Year 2010: ¥780,000 (Direct Cost: ¥600,000、Indirect Cost: ¥180,000)
Fiscal Year 2009: ¥3,380,000 (Direct Cost: ¥2,600,000、Indirect Cost: ¥780,000)
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| Keywords | シリコン酸化膜 / 光電子分光 / 酸化速度 / リアルタイム測定 / ゲート酸化膜 / 熱脱離 / 放射光 / ドライ酸化 / ウェット酸化 |
|---|
| Research Abstract |
For further technological development of semiconductor integrated circuits, we have developed ambient pressure x-ray photoelectron spectroscopy, and carried out real-time observation of nanoscale surface reaction on silicon insulator films with this method. We found two regimes for oxidation rate in initial stage by measuring the growth rate of thermal silicon oxide films accurately. In addition, we found many silicon nanoscale structures on the surface when the silicon oxide films were heated in vacuum.
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