Reaction mechanism of nano-scale silicon-insulator thin films by real-time observation
| Project/Area Number |
21560321
|
|---|
| Research Category |
Grant-in-Aid for Scientific Research (C)
|
| Allocation Type | Single-year Grants |
|---|
| Section | 一般 |
|---|
| Research Field |
Electronic materials/Electric materials
|
|---|
| Research Institution | Hirosaki University |
|---|
Principal Investigator |
ENTA Yoshiharu 弘前大学, 大学院・理工学研究科, 准教授 (20232986)
|
|---|
| Co-Investigator(Kenkyū-buntansha) |
SAKISAKA Yasuo 弘前大学, 大学院・理工学研究科, 教授 (80108977)
加藤 博雄 弘前大学, 大学院・理工学研究科, 教授 (20152738)
手塚 泰久 弘前大学, 大学院・理工学研究科, 教授 (20236970)
|
|---|
| Project Period (FY) |
2009 – 2011
|
| Project Status |
Completed (Fiscal Year 2011)
|
| Budget Amount *help |
¥4,810,000 (Direct Cost: ¥3,700,000、Indirect Cost: ¥1,110,000)
Fiscal Year 2011: ¥650,000 (Direct Cost: ¥500,000、Indirect Cost: ¥150,000)
Fiscal Year 2010: ¥780,000 (Direct Cost: ¥600,000、Indirect Cost: ¥180,000)
Fiscal Year 2009: ¥3,380,000 (Direct Cost: ¥2,600,000、Indirect Cost: ¥780,000)
|
|---|
| Keywords | シリコン酸化膜 / 光電子分光 / 酸化速度 / リアルタイム測定 / ゲート酸化膜 / 熱脱離 / 放射光 / ドライ酸化 / ウェット酸化 |
|---|
| Research Abstract |
For further technological development of semiconductor integrated circuits, we have developed ambient pressure x-ray photoelectron spectroscopy, and carried out real-time observation of nanoscale surface reaction on silicon insulator films with this method. We found two regimes for oxidation rate in initial stage by measuring the growth rate of thermal silicon oxide films accurately. In addition, we found many silicon nanoscale structures on the surface when the silicon oxide films were heated in vacuum.
|
Report
(4 results)
Research Products
(49 results)
-
-
-
[Journal Article] Controls over Structural and Electronic Properties of Epitaxial Graphene on Silicon Using Surface Termination of 3C-SiC(111)/Si2011
Author(s)
H. Fukidome, S. Abe, R. Takahashi, K. Imaizumi, S. Inomata, H. Handa, E. Saito, Y. Enta, A. Yoshigoe, Y. Teraoka, M. Kotsugi, T. Ohkouchi, T. Kinoshita, S. Ito, M. Suemitsu
-
Journal Title
Applied Physics Express
Volume: 4
Pages: 115104-115104
NAID
Related Report
Peer Reviewed
-
[Journal Article] Control of Epitaxy of Graphene by Crystallographic Orientation of Si Substrate toward Device Applications2011
Author(s)
H. Fukidome, R. Takahashi, S. Abe, K. Imaizumi, H. Handa, H.-C. Kang, H. Karasawa, T. Suemitsu, T. Otsuji, Y. Enta, M. Suemitsu, A. Yoshigoe, Y. Teraoka, M. Kotsugi, T. Ohkouchi, T. Kinoshita
-
Journal Title
Journal of Materials Chemistry
Volume: 21
Pages: 17242-17248
Related Report
Peer Reviewed
-
-
-
-
-
-
-
-
-
-
[Journal Article] Effects of Silicon Source Gas and Substrate Bias on the Film Properties of Si-Incorporated Diamond-Like Carbon by Radio-Frequency Plasma-Enhanced Chemical Vapor Deposition2009
Author(s)
H. Nakazawa, T. Kinoshita, Y. Kaimori, Y. Asai, M. Suemitsu, T. Abe, K. Yasui, T. Endoh, T. Itoh, Y. Narita, Y. Enta, M. Mashita
-
Journal Title
Japanese Journal of Applied Physics
Volume: 48
Pages: 116002-116002
NAID
Related Report
Peer Reviewed
-
-
-
[Journal Article] Epitaxial of Graphene on 3C-SiC(111) Thin Films on Microfabricated Si(111) Substrates
Author(s)
T.Ide, Y. Kawai, H. Handa, H. Fukidome, M. Kotsugi, T. Ohkochi, Y. Enta, T. Kinoshita, A.Yoshigoe, Y. Teraoka, M. Suemitsu
-
Journal Title
Japanese Journal of Applied Physics
Volume: (印刷中)
NAID
Related Report
Peer Reviewed
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
