| Budget Amount *help |
¥4,680,000 (Direct Cost: ¥3,600,000、Indirect Cost: ¥1,080,000)
Fiscal Year 2011: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2010: ¥1,820,000 (Direct Cost: ¥1,400,000、Indirect Cost: ¥420,000)
Fiscal Year 2009: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
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| Research Abstract |
We investigated low-temperature solid-state crystallization(SPC) of an amorphous Si(a-Si) film on a YSZ layer which stimulates the crystallization. As a result, it is found that 1) Y/(Zr+Y) ratio is needed more than 0. 15 for low-temperature crystallization, 2) due to YSZ layer, crystallization temperature becomes lower, 3) diffusion of Zr impurity into Si and surface roughness of Si film were reduced by SPC, 4) improvement of YSZ surface quality prior to Si film deposition is needed for better crystallization, and 5) thermal expansion between layers of TFT structure should be considered on its fabrication.
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