| Project/Area Number |
21560329
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Shimane University |
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Principal Investigator |
|
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| Co-Investigator(Renkei-kenkyūsha) |
HARA Akito 東北学院大学, 工学部, 教授 (20417398)
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| Project Period (FY) |
2009 – 2011
|
| Project Status |
Completed (Fiscal Year 2011)
|
| Budget Amount *help |
¥4,290,000 (Direct Cost: ¥3,300,000、Indirect Cost: ¥990,000)
Fiscal Year 2011: ¥650,000 (Direct Cost: ¥500,000、Indirect Cost: ¥150,000)
Fiscal Year 2010: ¥780,000 (Direct Cost: ¥600,000、Indirect Cost: ¥180,000)
Fiscal Year 2009: ¥2,860,000 (Direct Cost: ¥2,200,000、Indirect Cost: ¥660,000)
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| Keywords | 電気電子材料 / シリコン / ゲルマニュウム / 薄膜 / レーザ結晶化 / 電気・電子材料 |
|---|
| Research Abstract |
Flow-shaped growth of Si and SiGe thin films on glass substrate was achieved by continuous wave laser lateral crystallization(CLC) technique. CLC is useful to decrease the degradation effects of grain boundaries on channel current in thin film transistors(TFT) and is also effective to decrease defects in grains. Compounding of Ge to Si changes the geometry from flow-shaped growth to super-lateral growth resulting in formation of quasi-single crystal. This result was attributed to the constitutional undercooling that is peculiar to alloys. Characterization on segregation of Ge, geometry of crystalline boundaries, and TFT characteristics was performed.
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