Study on spin-filter magnetic tunnel junction devices based on ferromagnetic semiconductor
| Project/Area Number |
21560331
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Yamaguchi University |
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Principal Investigator |
ASADA Hironori 山口大学, 大学院・理工学研究科, 准教授 (70201887)
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| Co-Investigator(Kenkyū-buntansha) |
SENBA Shinya 宇部工業高等専門学校, 電気工学科, 准教授 (40342555)
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| Co-Investigator(Renkei-kenkyūsha) |
KOYANAGI Tsuyoshi 山口大学, 大学院・理工学研究科, 教授 (90178385)
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| Project Period (FY) |
2009 – 2011
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| Project Status |
Completed (Fiscal Year 2011)
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| Budget Amount *help |
¥4,810,000 (Direct Cost: ¥3,700,000、Indirect Cost: ¥1,110,000)
Fiscal Year 2011: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
Fiscal Year 2010: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
Fiscal Year 2009: ¥2,470,000 (Direct Cost: ¥1,900,000、Indirect Cost: ¥570,000)
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| Keywords | スピンフィルタ / 強磁性半導体 / 強磁性トンネル接合 / スピンエレクトロニクス / IV-VI族半導体 |
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| Research Abstract |
We have grown a spin-filter type magnetic tunnel junction(SF-MTJ) combining the ferromagnetic semiconductor EuS barrier with the p-type ferromagnetic semiconductor Ge_<1-x> Mn_x Te and evaluated spin-filtering effect. Fully epitaxial SF-MTJs(Ge_<1-x> Mn_xTe/ EuS/ GeTe and Ge_<1-x> Mn_x Te/ GeTe/ EuS/ GeTe) were successfully grown on BaF_2(111) substrates by molecular beam epitaxy and the spin-filtering effect by hole is observed, though the MR ration was small. In order to change the growth direction, that is transport direction, epitaxial multilayers on InP(001) substrates were obtained.
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Report
(4 results)
Research Products
(13 results)
