A diamond thin film growth on SiC buffer layer on a Si substrate
| Project/Area Number |
21560334
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Kyushu University |
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Principal Investigator |
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| Co-Investigator(Renkei-kenkyūsha) |
TEII Kungen 九州大学, 大学院・総合理工学研究院, 准教授 (10335995)
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| Project Period (FY) |
2009 – 2011
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| Project Status |
Completed (Fiscal Year 2011)
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| Budget Amount *help |
¥4,680,000 (Direct Cost: ¥3,600,000、Indirect Cost: ¥1,080,000)
Fiscal Year 2011: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2010: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
Fiscal Year 2009: ¥2,340,000 (Direct Cost: ¥1,800,000、Indirect Cost: ¥540,000)
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| Keywords | 電気・電子材料(半導体、誘電体、磁性体、超誘電体、有機物、絶縁体、超伝導体など) / 結晶成長 / シリコンカーバイド / ナノ結晶ダイヤモンド / マイクロ波プラズマＣＶＤ / ＳｉＣ / 電気・電子材料 / ダイヤモンド / CVD / SiC / ナノ結晶 / マイクロ波 |
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| Research Abstract |
The purpose of this research is to use low cost Si substrate for fabricating future power devices using nanocrystalline diamond (NCD) on SiC/Si substrate. We have succeeded in fabricating pn diode using n-type NCD film on a SiC film grown on p-type Si substrate.
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Report
(4 results)
Research Products
(31 results)
