A diamond thin film growth on SiC buffer layer on a Si substrate

• Project/Area Number: 21560334
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Electronic materials/Electric materials
• Research Institution: Kyushu University
• Principal Investigator: KATO Yoshimine 九州大学, 工学研究院, 准教授 (60380573)
• Co-Investigator(Renkei-kenkyūsha): TEII Kungen 九州大学, 大学院・総合理工学研究院, 准教授 (10335995)
• Project Period (FY): 2009 – 2011
• Project Status: Completed (Fiscal Year 2011)
• Budget Amount: ¥4,680,000 (Direct Cost: ¥3,600,000、Indirect Cost: ¥1,080,000); Fiscal Year 2011: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000); Fiscal Year 2010: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000); Fiscal Year 2009: ¥2,340,000 (Direct Cost: ¥1,800,000、Indirect Cost: ¥540,000)
• Keywords: 電気・電子材料(半導体、誘電体、磁性体、超誘電体、有機物、絶縁体、超伝導体など) / 結晶成長 / シリコンカーバイド / ナノ結晶ダイヤモンド / マイクロ波プラズマＣＶＤ / ＳｉＣ / 電気・電子材料 / ダイヤモンド / CVD / SiC / ナノ結晶 / マイクロ波

Research Abstract

The purpose of this research is to use low cost Si substrate for fabricating future power devices using nanocrystalline diamond (NCD) on SiC/Si substrate. We have succeeded in fabricating pn diode using n-type NCD film on a SiC film grown on p-type Si substrate.

Research Products

• [Journal Article] Fabrication of 4H-SiC/nanocrystalline diamond pn junctions (2012)
  • Author(s): Ryo Amano, Masaki Goto, Yoshimine Kato, and Kungen Teii
  • Journal Title: Materials Science Forum Volume: Vol.717-720 Pages: 1009-1012
  • Peer Reviewed
• [Journal Article] Fabrication of 4H-SiC/nanocrystalline diamond pn junctions (2012)
  • Author(s): Ryo Amano, Masaki Goto, Yoshimine Kato, Kungen Teii
  • Journal Title: Mater. Sci. Forum Volume: 717-720 Pages: 1009-1012
  • Peer Reviewed
• [Journal Article] Formation of epitaxial 3C-SiC layers by microwave plasma-assisted carbonization (2011)
  • Author(s): Yoshimine Kato, Masaki Goto, Ryota Sato, Kazuhiro Yamada, Akira Koga, Kungen Teii, Chenda Srey, and Satoru Tanaka
  • Journal Title: Surface & Coatings Technology Volume: Vol. 206 Pages: 990-993
  • Peer Reviewed
• [Journal Article] Fabrication of n-type nanocrystalline diamond/3C-SiC/p-Si(001) junctions (2011)
  • Author(s): M. Goto, A. Koga, K. Yamada, Y. Kato, and K. Teii
  • Journal Title: Materials Science Forum Volume: Vol.679-680 Pages: 524-527
  • Peer Reviewed
• [Journal Article] Growth and electrical properties of 3C-SiC/nanocrystalline diamond layered films (2011)
  • Author(s): Akira KOGA, Kungen TEII, Masaki GOTO, Kazuhiro YAMADA, and Yoshimine KATO
  • Journal Title: Jpn. J. Appl. Phys Volume: Vol. 50, No.1
  • NAID: 210000138243
  • Peer Reviewed
• [Journal Article] Growth and electrical properties of 3C-SiC/nanocrystalline diamond layered films (2011)
  • Author(s): Akira KOGA, Kungen TEII, Masaki GOTO, Kazuhiro YAMADA Yoshimine KATO
  • Journal Title: Jpn.J.Appl.Phys. Volume: 50
  • NAID: 210000138243
  • Peer Reviewed
• [Journal Article] Fabrication of n-type nanocrystalline diamond/3C-SiC/p-Si(001) junctions (2011)
  • Author(s): M.Goto, A.Koga, K.Yamada, Y.Kato, K.Teii
  • Journal Title: Mater.Sci.Forum. Volume: 679-680 Pages: 524-527
  • Peer Reviewed
• [Journal Article] Formation of epitaxial 3C-SiC layers by microwave plasma-assisted carbonization (2011)
  • Author(s): Yoshimine Kato, Masaki Goto, Ryota Sato, Kazuhiro Yamada, Akira Koga, Kungen Teii, Chenda Srey, Satoru Tanaka
  • Journal Title: Surface & Coatings Technology Volume: 206 Pages: 990-993
  • Peer Reviewed
• [Journal Article] Growth of 3C-SiC/nanocrystalline diamond films on Si(001) by microwave plasma-assisted carbonization and deposition (2010)
  • Author(s): Yoshimine KATO, etc.
  • Journal Title: Proc.of 8th European Conference on Silicon Carbide and Related Materials Volume: ECSCRM8^<th>
  • Peer Reviewed
• [Journal Article] Island formation of SiC film on striated Si(001) substrates (2009)
  • Author(s): Yoshimine Kato and Kazuo Sakumoto
  • Journal Title: Materials Science Forum Volume: Vol. 600-603 Pages: 227-230
  • Peer Reviewed
• [Journal Article] Island formation of SiC film on striated Si(001) substrates (2009)
  • Author(s): Yoshimine Kato, etc.
  • Journal Title: Materials Science Forum Volume: 600-603 Pages: 227-230
  • Peer Reviewed
• [Journal Article] SiC and nanocrystalline diamond coating on Si substrates fabricated by microwave plasma CVD (2009)
  • Author(s): Yoshimine Kato, etc.
  • Journal Title: Proc.of 16th International Conference on Surface Modification of Materials by Ion Beams Volume: SMMIB2009 Pages: 125-128
  • Peer Reviewed
• [Presentation] ナノクリスタルダイヤモンド薄膜のオーミック電極特性 (2013)
  • Author(s): 下田尚孝、加藤喜峰、堤井君元
  • Organizer: 日本金属学会他九州支部 平成25年度合同学術講演会
  • Place of Presentation: 熊本県民交流館パレア
  • Year and Date: 2013-06-08
• [Presentation] p型4H‐SiC/n型ナノクリスタルダイヤモンド ダイオードの高温動作 (2012)
  • Author(s): 天野僚 ,五 島正基,下田尚孝, 加藤喜峰,堤井君元
  • Organizer: 第21回シリコンカーバイド(SiC)及び関連ワイドギャップ半導体研究会
  • Place of Presentation: 大阪市中央公会堂
  • Year and Date: 2012-11-19
• [Presentation] Electrical Characteristics of 4H-SiC/Nanocrystalline Diamond pn Junctions (2012)
  • Author(s): Y. Kato, M. Goto, R. Amano, N. Shimoda, and K. Teii
  • Organizer: Diamond and Carbon Materials 2012
  • Place of Presentation: Spain, Granada
  • Year and Date: 2012-09-04
• [Presentation] 高温時におけるナノクリスタルダイヤモンド薄膜のオーミック電極の特性 (2012)
  • Author(s): 下田尚孝、天野僚、加藤喜峰、堤井君元
  • Organizer: 日本金属学会他九州支部 平成24年度合同学術講演会
  • Place of Presentation: 北九州国際会議場
  • Year and Date: 2012-06-09
• [Presentation] Fabrication and characterization of Si/ and SiC/nanocrystalline diamond pn junctions (2011)
  • Author(s): Masaki Goto, Ryo Amano, Yoshimine Kato, Kungen Teii
  • Organizer: International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011)
  • Place of Presentation: Cleveland, Ohio, USA
  • Year and Date: 2011-09-14
• [Presentation] 半導体基板上へのナノダイヤモンド成膜とダイオード特性に関する研究 (2011)
  • Author(s): 天野僚 ,五 島正基,加藤喜峰,堤井君元
  • Organizer: 日本金属学会他九州支部 平23年度合同学術講演会
  • Place of Presentation: 九州大学
  • Year and Date: 2011-06-11
• [Presentation] マイクロ波プラズマCVD法を用いたp-Si上の3C-SiC/n型ナノクリスタルダイヤモンド薄膜の成長 (2010)
  • Author(s): 五島 正基, 古閑 彰, 山田 和広, 加藤喜峰, 堤井 君元
  • Organizer: 平成22年度 応用物理学会九州支部学術講演会
  • Place of Presentation: 九州大学
  • Year and Date: 2010-11-27
• [Presentation] マイクロ波プラズマCVD法を用いたp-Si上の3C-SiC/n型ナノクリスタルダイヤモンド薄膜の成長 (2010)
  • Author(s): 五島正基, 古閑彰, 山田和広, 加藤喜峰, 堤井君元
  • Organizer: 平成22年度応用物理学会九州支部学術講演会
  • Place of Presentation: 福岡県、九州大学
  • Year and Date: 2010-11-27
• [Presentation] Growth of 3C-SiC/nanocrystalline diamond films on Si (001) by microwave plasma-assisted carbonization and deposition (2010)
  • Author(s): Yoshimine KATO, Akira KOGA, Masaki GOTO, Kazuhiro YAMADA, Kungen TEII
  • Organizer: European Conference on Silicon Carbide and Related Materials (ECSCRM 8th)
  • Place of Presentation: Oslo, Norway
  • Year and Date: 2010-08-31
• [Presentation] Growth of 3C-SiC/nanocrystalline diamond films on Si (001) by microwave plasma-assisted carbonization and deposition (2010)
  • Author(s): Yoshimine KATO, Akira KOGA, Masaki GOTO, Kazuhiro YAMADA, Kungen TEII
  • Organizer: 8th European Conference on Silicon Carbide and Related Materials
  • Place of Presentation: ノルウェー、Sundvolden
  • Year and Date: 2010-08-31
• [Presentation] Growth of 3C-SiC/nanocrystalline diamond films on Si(001) by microwave nlasma-assisted carbonization and deuosition (2010)
  • Author(s): Yoshimine KATO,, etc.
  • Organizer: European Conference on Silicon Carbide and Related Materials (ECSCRM 8^<th>)
  • Place of Presentation: ノルウェー、オスロ
  • Year and Date: 2010-08-31
• [Presentation] マイクロ波プラズマCVD法によるSi/SiC/NCD膜の成長及び評価 (2010)
  • Author(s): 五島正基、古閑彰、加藤喜峰、堤井君元
  • Organizer: 日本金属学会他九州支部 平22年度合同学術講演会
  • Place of Presentation: 熊本大学
  • Year and Date: 2010-06-05
• [Presentation] マイクロ波プラズマCVD法によるSi/SiC/NCD膜の成長及び評価 (2010)
  • Author(s): 五島正基、古閑彰、加藤喜峰、堤井君元
  • Organizer: 日本金属学会他九州支部平22年度合同学術講演会
  • Place of Presentation: 熊本県、熊本大学
  • Year and Date: 2010-06-05
• [Presentation] SiC and nanocrystalline diamond coating on Si substrates fabricated by microwave plasma CVD (2009)
  • Author(s): Yoshimine Kato, Tomohiko Horikawa, Tomohiro Ikeda, and Kungen Teii
  • Organizer: International Conference on Surface Modification of Materials by Ion Beams -SMMIB2009-
  • Place of Presentation: 東京
  • Year and Date: 2009-09-15
• [Presentation] SiC and nanocrystalline diamond coating on Si substrates fabricated by microwave plasma CVD (2009)
  • Author(s): Yoshimine Kato, etc.
  • Organizer: 16th International Conference on Surface Modification of Materials by Ion Beams -SMMIB2009-
  • Place of Presentation: 東京、AISTお台場
  • Year and Date: 2009-09-15
• [Presentation] p型4H‐SiC／n型ナノクリスタルダイヤモンド ダイオードの高温動作
  • Author(s): 天野 僚，五島 正基，下田尚孝, 加藤 喜峰，堤井 君元
  • Organizer: 第21回シリコンカーバイド(SiC)及び関連ワイドギャップ半導体研究会
  • Place of Presentation: 大阪市中央公会堂
• [Presentation] 高温時におけるナノクリスタルダイヤモンド薄膜のオーミック電極の特性
  • Author(s): 下田 尚孝、天野 僚、加藤 喜峰、堤井 君元
  • Organizer: 日本金属学会他九州支部 平24年度合同学術講演会
  • Place of Presentation: 北九州国際会議場
• [Book] ヘテロ元素の特性を活かした新機能材料 (2010)
  • Author(s): 加藤喜峰
  • Publisher: シーエムシー出版
• [Remarks]
  • URL: http://www.kato-lab.org/content#device