• Search Research Projects
  • Search Researchers
  • How to Use
  1. Back to previous page

DEVELOPMENT OF THEII-VI MAGNETO-OPTICAL SEMICONDUCTOR THIN FILMS FOR THEIR APPLICATION AT VIOLET, BLUE AND GREEN WAVELENGTHS

Research Project

Project/Area Number 21560342
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeSingle-year Grants
Section一般
Research Field Electronic materials/Electric materials
Research InstitutionFukuoka Institute of Technology

Principal Investigator

IMAMURA Masaaki  福岡工業大学, 工学部, 教授 (40111794)

Co-Investigator(Kenkyū-buntansha) YAMAGUCHI Toshinao  福岡工業大学, 工学部, 教授 (50037925)
Project Period (FY) 2009 – 2011
Project Status Completed (Fiscal Year 2011)
Budget Amount *help
¥4,810,000 (Direct Cost: ¥3,700,000、Indirect Cost: ¥1,110,000)
Fiscal Year 2011: ¥780,000 (Direct Cost: ¥600,000、Indirect Cost: ¥180,000)
Fiscal Year 2010: ¥1,820,000 (Direct Cost: ¥1,400,000、Indirect Cost: ¥420,000)
Fiscal Year 2009: ¥2,210,000 (Direct Cost: ¥1,700,000、Indirect Cost: ¥510,000)
KeywordsMBE / エピタキシャル / 磁性半導体 / 超格子 / スピントロニクス
Research Abstract

II-VI based magnetic semiconductors with a wide optical band gap are expected to show high potential for optical applications utilizing short wavelength laser diodes. ZnMnTe and ZnMnSe exhibit their absorption edges at 428-544 nm and 428-458 nm, respectively. We have confirmed that the Faraday rotation angle in the ZnMnTe films deposited on quartz glass substrates is large near the absorption edge. On crystallinity, the preferred(111) growth reported previously for CdMnTe films on QG substrates was also observed in the ZnMnTe and ZnMnSe films. The Faraday rotation angle of those films synthesised on QG substrates by using molecular beam epitaxy with a thickness of 2 micron-meters has been studied. A Faraday-effect signal observed for the ZnMnTe film using a 532-nm green LD has shown that ZnMnTe films are useful for green lights. We developed equipment for observing the Faraday effect directly under ac magnetic fields generated by a ring magnet. The results of a direct Faraday rotation observation sucessfully made for the ZnMnTe films under ac fields have been shown.

Report

(4 results)
  • 2011 Annual Research Report   Final Research Report ( PDF )
  • 2010 Annual Research Report
  • 2009 Annual Research Report
  • Research Products

    (13 results)

All 2010 2009

All Journal Article (3 results) (of which Peer Reviewed: 2 results) Presentation (8 results) Patent(Industrial Property Rights) (2 results)

  • [Journal Article] II-VI磁性半導体CdMnCoTe四元系薄膜における光磁気効果のエンハンスメント2010

    • Author(s)
      今村正明、山口俊尚
    • Journal Title

      福岡工業大学エレクトロニクス研究所所報

      Volume: Vol.27 Pages: 1-4

    • Related Report
      2011 Final Research Report 2010 Annual Research Report
  • [Journal Article] Crystallographic and optical properties of Mn-substituted II-VI based magnetic semiconductor films2010

    • Author(s)
      M. Imamura, T. Yamaguchi
    • Journal Title

      Journal of Physics : Conference Series

      Volume: Vol.200 Issue: 6 Pages: 1-4

    • DOI

      10.1088/1742-6596/200/6/062009

    • Related Report
      2011 Final Research Report
    • Peer Reviewed
  • [Journal Article] Crystallographic and optical properties of Mn-substituted II-VI based magnetic semiconductor films2010

    • Author(s)
      M.Imamura, T.Yamaguchi
    • Journal Title

      Journal of Physics : Conference Series 200062009

      Pages: 1-4

    • Related Report
      2009 Annual Research Report
    • Peer Reviewed
  • [Presentation] II-VI磁性半導体擬四元CdMnCoTe薄膜のCoの効果による光磁気効果2010

    • Author(s)
      今村正明
    • Organizer
      第11回九州・山口・沖縄磁気セミナー
    • Place of Presentation
      島根県隠岐の島町レインボーアリーナ[隠岐の島]
    • Related Report
      2011 Final Research Report
  • [Presentation] II-VI磁性半導体擬四元CdMnCoTe薄膜のCoの効果による光磁気効果2010

    • Author(s)
      今村正明
    • Organizer
      第11回九州・山口・沖縄磁気セミナー
    • Place of Presentation
      島根県隠岐の島町レインボーアリーナ
    • Related Report
      2010 Annual Research Report
  • [Presentation] II-VI磁性半導体擬四元CdMnCoTe薄膜のCoによる光磁気効果のエンハンスメント2010

    • Author(s)
      今村正明、高城和美、山口俊尚
    • Organizer
      第34回日本磁気学会学術講演会
    • Place of Presentation
      茨城県つくば国際会議場
    • Related Report
      2010 Annual Research Report
  • [Presentation] Mn置換II-VI磁性半導体薄膜の結晶性と磁気光効果2009

    • Author(s)
      今村正明、岡田章、山口俊尚
    • Organizer
      第33回日本磁気学会学術講演会
    • Place of Presentation
      長崎大学工学部[長崎]
    • Year and Date
      2009-09-13
    • Related Report
      2011 Final Research Report
  • [Presentation] Mn置換II-VI磁性半導体薄膜の結晶性と磁気光効果2009

    • Author(s)
      今村正明、岡田章、山口俊尚
    • Organizer
      第33回日本磁気学会学術講演会
    • Place of Presentation
      長崎大学工学部
    • Year and Date
      2009-09-13
    • Related Report
      2009 Annual Research Report
  • [Presentation] Crystallographic and optical properties of Mn-substituted II-VI based magnetic semiconductor films2009

    • Author(s)
      M. Imamura, T. Yamaguchi
    • Organizer
      International Conference on Magnetism(ICM2009)
    • Place of Presentation
      Karlsruhe[Germany]
    • Year and Date
      2009-07-30
    • Related Report
      2011 Final Research Report
  • [Presentation] Crystallographic and optical properties of Mn-substituted II-VI based magnetic semiconductor films2009

    • Author(s)
      M.Imamura, T.Yamaguchi
    • Organizer
      International Conference on Magnetism(ICM2009)
    • Place of Presentation
      Karlsruhe, Germany
    • Year and Date
      2009-07-30
    • Related Report
      2009 Annual Research Report
  • [Presentation] II-VI磁性半導体擬四元CdMnCoTe薄膜のCoによる光磁気効果のエンハンスメント2009

    • Author(s)
      今村正明、高城和美、山口俊尚
    • Organizer
      第34回日本磁気学会学術講演会
    • Place of Presentation
      茨城県つくば国際会議場[つくば]
    • Related Report
      2011 Final Research Report
  • [Patent(Industrial Property Rights)] ルミネッセンス型光磁気センサ2009

    • Inventor(s)
      今村正明
    • Industrial Property Rights Holder
      福岡工業大学
    • Industrial Property Number
      2009-209688
    • Filing Date
      2009-09-10
    • Related Report
      2011 Final Research Report
  • [Patent(Industrial Property Rights)] II-VI磁性半導体によるフォトルミネッセンス型磁気センサ2009

    • Inventor(s)
      今村正明
    • Industrial Property Rights Holder
      福岡工業大学
    • Industrial Property Number
      2009-209688
    • Filing Date
      2009-09-10
    • Related Report
      2009 Annual Research Report

URL: 

Published: 2009-04-01   Modified: 2016-04-21  

Information User Guide FAQ News Terms of Use Attribution of KAKENHI

Powered by NII kakenhi