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Surface passivation of GaN by graphene layers

Research Project

Project/Area Number 21560352
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeSingle-year Grants
Section一般
Research Field Electron device/Electronic equipment
Research InstitutionUniversity of Fukui

Principal Investigator

SHIOJIMA Kenji  福井大学, 大学院・工学研究科, 准教授 (70432151)

Co-Investigator(Kenkyū-buntansha) HASHIMOTO Akihiro  福井大学, 大学院・工学研究科, 准教授 (10251985)
Project Period (FY) 2009 – 2011
Project Status Completed (Fiscal Year 2011)
Budget Amount *help
¥4,680,000 (Direct Cost: ¥3,600,000、Indirect Cost: ¥1,080,000)
Fiscal Year 2011: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000)
Fiscal Year 2010: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
Fiscal Year 2009: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Keywordsグラフェン / 表面保護 / 電子デバイス / GaN
Research Abstract

We proposed a new technology for surface passivation of GaN by graphene layers, which have no dangling bonds on the surface, in order to improve electron device characteristics. Large area transfer of the graphene layers from SiC substrates on GaN was succeeded, and oxygen plasma etching process was established. We found Schottky barrier lowering by inserting the graphene layers into Ni/GaN interfaces.

Report

(4 results)
  • 2011 Annual Research Report   Final Research Report ( PDF )
  • 2010 Annual Research Report
  • 2009 Annual Research Report
  • Research Products

    (82 results)

All 2012 2011 2010 2009 Other

All Journal Article (16 results) (of which Peer Reviewed: 15 results) Presentation (64 results) Book (1 results) Remarks (1 results)

  • [Journal Article] Deep levels in n-GaN Doped with Carbon Studied by Deep Level and Minority Carrier Transient Spectroscopies2012

    • Author(s)
      U. Honda, Y. Yamada, Y. Tokuda, K. Shiojima
    • Journal Title

      Japanese Journal of Applied Physics(JJAP)

      Volume: vol51 Issue: 4S Pages: 04DF04-04DF04

    • DOI

      10.1143/jjap.51.04df04

    • NAID

      210000072148

    • Related Report
      2011 Annual Research Report 2011 Final Research Report
    • Peer Reviewed
  • [Journal Article] 2DEG properties in InGaN/InN/InGaN-based double channel HEMTs2010

    • Author(s)
      Md. Tanvir Hasan, Md. Rejvi Kaysir, Md. Sheraju Islaml, Ashraful G. Bhuiyan, Md. Rafiqul Islam, A. Hashimoto and A. Yamamoto
    • Journal Title

      Phys. Status Solidi(C)

      Volume: vol7 Issue: 7-8 Pages: 1997-2000

    • DOI

      10.1002/pssc.200983608

    • Related Report
      2011 Final Research Report
    • Peer Reviewed
  • [Journal Article] AlN/InN metal oxide semiconductor heterostructure field effect transistor2010

    • Author(s)
      Md. Sherajul Islam, Sakib M. Muhtadi, Md. Tanvir Hasan, Ashraful G. Bhuiyan, Md. Rafiqul Islam, A. Hashimoto and A. Yamamoto
    • Journal Title

      Phys. Status Solidi(C)

      Volume: vol7 Issue: 7-8 Pages: 1983-1987

    • DOI

      10.1002/pssc.200983597

    • Related Report
      2011 Final Research Report
    • Peer Reviewed
  • [Journal Article] Few-layer epitaxial graphene grown on vicinal 6H-SiC studies by DUV Raman spectroscopy2010

    • Author(s)
      K. Kisoda, S. Kamoi, N. Hasuike, H. Harima, K. Morita, A. Hashimoto and S. Tanaka
    • Journal Title

      Applied Physics Letters

      Volume: vol97 Issue: 3 Pages: 33108-33108

    • DOI

      10.1063/1.3466150

    • Related Report
      2011 Final Research Report
    • Peer Reviewed
  • [Journal Article] Few-layer epitaxial graphene grown on vicinal 6H-SiC stud Raman spectroscopy2010

    • Author(s)
      K.Kisoda, S.Kamoi, N.Hasuike, H.Harima, K.Morita, A.Hashimoto, S.Tanaka
    • Journal Title

      Applied Physics Letters

      Volume: 97 Pages: 33108-33108

    • Related Report
      2010 Annual Research Report
    • Peer Reviewed
  • [Journal Article] AIN/InN metal oxide semiconductor heterostructure field effect transistor2010

    • Author(s)
      Md.Sherajul Islam, Sakib M.Muhtadi, Md.Tarivir Hasan, Ashraful G.Bhuiyan, Md.Rafiqul Islam, A.Hashimoto, A.Yamamoto
    • Journal Title

      Phys.Status Solidi

      Volume: C7 Pages: 1983-1987

    • Related Report
      2010 Annual Research Report
    • Peer Reviewed
  • [Journal Article] 2DEG properties in InGaN/lnN/InGaN-based double channel HEMTs2010

    • Author(s)
      Md.Tanvir Hasan, Md.Rejvi Kaysir, Md.Sheraju Islaml, Ashraful G.Bhuiyan, Md.Rafiqul Islam, A.Hashimoto, A.Yamamoto
    • Journal Title

      Phys.Status Solidi

      Volume: C7 Pages: 1997-2000

    • Related Report
      2010 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Electron Beam Irradiation Effect for Solid C_60 Epitaxy on Graphene2009

    • Author(s)
      A. Hashimoto, H. Terasaki, A. Yamamoto, S. Tanaka
    • Journal Title

      Diamond & Related Materials

      Volume: vol18 Pages: 388-391

    • URL

      http://www.sciencedirect.com/science/journal/09259635/18/2-3

    • Related Report
      2011 Final Research Report
    • Peer Reviewed
  • [Journal Article] GaN電子素子特性に結晶欠陥が与える影響2009

    • Author(s)
      塩島謙次
    • Journal Title

      結晶成長学会誌

      Volume: vol36 Pages: 214-221

    • Related Report
      2011 Final Research Report
    • Peer Reviewed
  • [Journal Article] Theoretical Investigation of GaN-Based Diodes with a Recessed Composite Schottky-Barrier Structure2009

    • Author(s)
      H. Makino, N. Ishikawa, K. Shiojima, M. Kuzuhara
    • Journal Title

      Jpn. J. Appl. Phys

      Volume: Vol48 Issue: 4S Pages: 691-695

    • DOI

      10.1143/jjap.48.04c103

    • NAID

      210000066614

    • Related Report
      2011 Final Research Report
    • Peer Reviewed
  • [Journal Article] I-V and C-V characteristics of rare-earth-metal/p-GaN Schottky contacts2009

    • Author(s)
      Yoshihiro Fukushima, Keita Ogisu, Masaaki Kuzuhara, Kenji Shiojima
    • Journal Title

      physica status solidi(c)

      Volume: vol.6 Issue: S2

    • DOI

      10.1002/pssc.200880857

    • NAID

      120001296355

    • Related Report
      2011 Final Research Report
    • Peer Reviewed
  • [Journal Article] I-V and C-V characteristics of rare-earth-metal/p-GaN Schottky contacts2009

    • Author(s)
      Yoshihiro Fukushima, Keita Ogisu, Masaaki Kuzuhara, Kenji Shiojima
    • Journal Title

      physica status solidi (c) 6

    • NAID

      120001296355

    • Related Report
      2009 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Simulation of tunneling contact resistivity in non-polar AlGaN/GaN Heterostructures2009

    • Author(s)
      Hironari Chikaoka, Yoichi Takakuwa, Kenji Shiojima, Masaaki Kuzuhara
    • Journal Title

      IEICE Trans.Electron. E92-C

      Pages: 691-695

    • NAID

      10026822049

    • Related Report
      2009 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Theoretical Investigation of GaN-Based Diodes with a Recessed Composite Schottky-Barrier Structure2009

    • Author(s)
      H.Makino, N.Ishikawa, K.Shiojima, M.Kuzuhara
    • Journal Title

      Jpn.J.Appl.Phys. 48

    • NAID

      210000066614

    • Related Report
      2009 Annual Research Report
    • Peer Reviewed
  • [Journal Article] GaN電子素子特性に結晶欠陥が与える影響2009

    • Author(s)
      塩島謙次
    • Journal Title

      日本結晶成長学会誌 36

      Pages: 214-221

    • Related Report
      2009 Annual Research Report
  • [Journal Article] Electron Beam Irradiation Effect for Solid C_<60> Epitaxy on Graphene2009

    • Author(s)
      A.Hashimoto, H.Terasaki, A.Yamamoto, S.Tanaka
    • Journal Title

      Diamond & Related Materials 18

      Pages: 383-391

    • Related Report
      2009 Annual Research Report
    • Peer Reviewed
  • [Presentation] p形GaNショットキー接触におけるICPエッチングの影響2012

    • Author(s)
      高橋利文, 金田直樹, 三島友貴, 塩島謙次
    • Organizer
      応用物理学関係連合講演会
    • Place of Presentation
      早稲田大学
    • Year and Date
      2012-03-18
    • Related Report
      2011 Annual Research Report
  • [Presentation] 光応答法によるTi/Alオーミック電極形成初期過程の評価2012

    • Author(s)
      出店克顕, 横浜秀雄, 荒木賀行, 塩島謙次
    • Organizer
      応用物理学関係連合講演会
    • Place of Presentation
      早稲田大学
    • Year and Date
      2012-03-18
    • Related Report
      2011 Annual Research Report
  • [Presentation] エピタキシャルグラフェンの大面積転写(III)2012

    • Author(s)
      石田高章, 森田康平, 田中悟, 橋本明弘
    • Organizer
      第59回応用物理学関係連合講演会
    • Place of Presentation
      早稲田大学
    • Year and Date
      2012-03-17
    • Related Report
      2011 Annual Research Report
  • [Presentation] 転写エピタキシャルグラフェンが有する固有応力2012

    • Author(s)
      玉川大輔, 石田高章, 田中悟, 橋本明弘
    • Organizer
      第59回応用物理学関係連合講演会
    • Place of Presentation
      早稲田大学
    • Year and Date
      2012-03-17
    • Related Report
      2011 Annual Research Report
  • [Presentation] AFM/LFM同時測定によるSiO_2上転写グラフェンの表面観察2012

    • Author(s)
      常見大基, 山口喜弓, 石田大輔, 栗栖悠輔, 田中悟, 橋本明弘, 福井一俊, 山本晃司
    • Organizer
      第59回応用物理学関係連合講演会
    • Place of Presentation
      早稲田大学
    • Year and Date
      2012-03-17
    • Related Report
      2011 Annual Research Report
  • [Presentation] InGaN混晶のラマン散乱分光法におけるB1振動モードの組成依存性2012

    • Author(s)
      兒玉賢治, 播磨弘, 山本〓勇, 橋本明弘
    • Organizer
      第59回応用物理学関係連合講演会
    • Place of Presentation
      早稲田大学
    • Year and Date
      2012-03-16
    • Related Report
      2011 Annual Research Report
  • [Presentation] Electrical characteristics of surface stoichiometry controlled p-GaN Schottky contacts2012

    • Author(s)
      Kenji Shiojima, Toshifumi Takahashi, Naoki Kaneda, Tomoyoshi Mishima, Takashi Kajiwara, and Satoru Tanaka
    • Organizer
      the International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials(IsPlasma2012)
    • Place of Presentation
      Aich, Japan
    • Year and Date
      2012-03-07
    • Related Report
      2011 Final Research Report
  • [Presentation] Electrical characteristics of surface stoichiometry controlled p-GaN Schottky contacts2012

    • Author(s)
      Kenji Shiojima, Toshifumi Takahashi, Naoki Kaneda, Tomoyoshi Mishima, Takashi Kajiwara, Satoru Tanaka
    • Organizer
      th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (IsPlasma2012)
    • Place of Presentation
      Aich, Japan
    • Year and Date
      2012-03-07
    • Related Report
      2011 Annual Research Report
  • [Presentation] P型GaN中の深い準位の評価2011

    • Author(s)
      山田悠二郎,長谷川晶一,南部大翔,本田銀煕,徳田豊,塩島謙次
    • Organizer
      第20回SiC及び関連ワイドギャップ半導体研究会
    • Place of Presentation
      名古屋市
    • Year and Date
      2011-12-08
    • Related Report
      2011 Annual Research Report 2011 Final Research Report
  • [Presentation] Deep levels in n-GaN Doped with Carbon Studied by Deep Level and Minority Carrier Transient Spectroscopies2011

    • Author(s)
      U. Honda, Y. Yamada, Y. Tokuda, K. Shiojima
    • Organizer
      International conference on Solid State Devices and Materials(SSDM)
    • Place of Presentation
      Nagoya, Japan
    • Year and Date
      2011-09-26
    • Related Report
      2011 Final Research Report
  • [Presentation] Deep levels in n-GaN Doped with Carbon Studied by Deep Level and Minority Carrier Transient Spectroscopies2011

    • Author(s)
      U.Honda, Y.Yamada, Y.Tokuda, K.Shiojima
    • Organizer
      International conference on Solid State Devices and Materials (SSDM)
    • Place of Presentation
      Nagoya, Japan
    • Year and Date
      2011-09-26
    • Related Report
      2011 Annual Research Report
  • [Presentation] GaN上への大面積グラフェン転写およびグラフェン挿入による電極の低抵抗化2011

    • Author(s)
      田中浩太郎、下辻康広、橋本明弘、塩島謙次、田中悟
    • Organizer
      平成23年度電気関係学会北陸支部連合大会
    • Place of Presentation
      福井大学
    • Year and Date
      2011-09-17
    • Related Report
      2011 Final Research Report
  • [Presentation] GaN上への大面積グラフェン転写およびグラフェン挿入による電極の低抵抗化2011

    • Author(s)
      田中浩太郎、下辻康広、橋本明弘、塩島謙次、田中悟
    • Organizer
      応用物理学会学術講演会
    • Place of Presentation
      福井大学
    • Year and Date
      2011-09-17
    • Related Report
      2011 Annual Research Report
  • [Presentation] 偏光顕微ラマン散乱分光法による欠陥修復転写エピタキシャルグラフェンの評価2011

    • Author(s)
      石田高章, 玉川大輔, 梶原隆司, 田中悟, 橋本明弘
    • Organizer
      第72回応用物理学会学術講演会
    • Place of Presentation
      山形大学
    • Year and Date
      2011-09-01
    • Related Report
      2011 Annual Research Report
  • [Presentation] 大面積転写エピタキシャルグラフェンの偏光顕微ラマン散乱分光2011

    • Author(s)
      玉川大輔, 石田高章, 山本〓勇, 田中悟, 橋本明弘
    • Organizer
      第72回応用物理学会学術講演会
    • Place of Presentation
      山形大学
    • Year and Date
      2011-09-01
    • Related Report
      2011 Annual Research Report
  • [Presentation] 表面ストイキオメトリを制御したp-GaNショットキー接触の電気的特性2011

    • Author(s)
      高橋利文, 出店克顕、塩島謙次
    • Organizer
      応用物理学会学術講演会
    • Place of Presentation
      山形大学
    • Year and Date
      2011-08-31
    • Related Report
      2011 Annual Research Report
  • [Presentation] 一定温度MCTSによるn-GaN中炭素関連深い準位の評価2011

    • Author(s)
      山田悠二郎, 横井将大, 坂崎真司, 石倉正也、塩島謙次
    • Organizer
      応用物理学会学術講演会
    • Place of Presentation
      山形大学
    • Year and Date
      2011-08-31
    • Related Report
      2011 Annual Research Report
  • [Presentation] RF-MBE法によるグラフェン上InN成長初期過程2011

    • Author(s)
      兒玉賢治, 山本〓, 田中悟, 極本明弘
    • Organizer
      第72回応用物理学会学術講演会
    • Place of Presentation
      山形大学
    • Year and Date
      2011-08-30
    • Related Report
      2011 Annual Research Report
  • [Presentation] Evaluation of Mg-doping-concentration dependence for Ni/p-GaN Schottky contacts2011

    • Author(s)
      K. Shiojima, K. Demise
    • Organizer
      9th International Conference Nitride Semiconductors(ICNS-9)
    • Place of Presentation
      Glasgow UK.
    • Year and Date
      2011-07-13
    • Related Report
      2011 Final Research Report
  • [Presentation] RF-MBE Growth of GaN and InN on Epitaxial graphene Substrate2011

    • Author(s)
      K. Kodama, S. Tanaka, A. Yamamoto, and A. Hashimoto
    • Organizer
      9th International Conference Nitride Semiconductors(ICNS-9)
    • Place of Presentation
      Glasgow UK
    • Year and Date
      2011-07-13
    • Related Report
      2011 Final Research Report
  • [Presentation] Evaluation of Mg-doping-concentration dependence for Ni/p-GaN Schottky contacts2011

    • Author(s)
      K.Shiojima, K.Demise
    • Organizer
      9th International Conference Nitride Semiconductors (ICNS-9)
    • Place of Presentation
      Glasgow UK
    • Year and Date
      2011-07-13
    • Related Report
      2011 Annual Research Report
  • [Presentation] RF-MBE Growth of GaN and InN on Epitaxial graphene Substrate2011

    • Author(s)
      K.Kodama, S.Tanaka, A.Yamamoto, A.Hashimoto
    • Organizer
      9th International Conference Nitride Semicond uctors (ICNS-9)
    • Place of Presentation
      Glasgow UK
    • Year and Date
      2011-07-13
    • Related Report
      2011 Annual Research Report
  • [Presentation] Graphene formation on GaN substrates and electrical characteristics of metal/graphene/GaN structure2011

    • Author(s)
      K. Tanaka, Y. Shimotsuji, S. Tanaka, A. Hashimoto, and K. Shiojima
    • Organizer
      Graphene 2011
    • Place of Presentation
      Bilbao Spain
    • Year and Date
      2011-04-11
    • Related Report
      2011 Annual Research Report 2011 Final Research Report
  • [Presentation] Repair for Process-induced Defects of Transferred Graphen2011

    • Author(s)
      T. Ishida, Y. Shimotsuji, R. Kajiwara, S. Tanaka, and A. Hashimoto
    • Organizer
      Graphene 2011
    • Place of Presentation
      Bilbao Spain
    • Year and Date
      2011-04-11
    • Related Report
      2011 Final Research Report
  • [Presentation] Large Area Transfer of Epitaxial Graphene2011

    • Author(s)
      Y. Shimotsuji, T. Ishida, K. Morita, S. Tanaka, and A. Hashimoto
    • Organizer
      Graphene 2011
    • Place of Presentation
      Bilbao Spain
    • Year and Date
      2011-04-11
    • Related Report
      2011 Annual Research Report 2011 Final Research Report
  • [Presentation] Repair for Process-induced Defects of Transferred Graphene2011

    • Author(s)
      T.Ishida, Y.Shimotsuji, R.Kajiwara, S.Tanaka, A.Hashimoto
    • Organizer
      Graphene 2011
    • Place of Presentation
      Bilbao Spain
    • Year and Date
      2011-04-11
    • Related Report
      2011 Annual Research Report
  • [Presentation] Ni/p-GaNショットキー電極におけるMgドーピング濃度依存性の評価2011

    • Author(s)
      出店克顕, 塩島謙次
    • Organizer
      第58回応用物理学関係連合講演会
    • Place of Presentation
      神奈川工科大学
    • Year and Date
      2011-03-24
    • Related Report
      2010 Annual Research Report
  • [Presentation] 炭素ドープn-GaN中の深い準位の評価2011

    • Author(s)
      山田悠二郎, 横井将大, 坂崎真司^<1>, 石倉正也, 塩島謙次
    • Organizer
      第58回応用物理学関係連合講演会
    • Place of Presentation
      神奈川工科大学
    • Year and Date
      2011-03-24
    • Related Report
      2010 Annual Research Report
  • [Presentation] エピタキシャルグラフェンの大面積転写(II)2011

    • Author(s)
      下辻康広, 石田高章, 森田康平, 田中悟, 橋本明弘
    • Organizer
      第58回応用物理学関係連合講演会
    • Place of Presentation
      神奈川工科大学
    • Year and Date
      2011-03-24
    • Related Report
      2010 Annual Research Report
  • [Presentation] グラフェンの転写過程で形成された欠陥の修復2011

    • Author(s)
      石田高章, 下辻康広, 梶原隆司, 田中悟, 橋本明弘
    • Organizer
      第58回応用物理学関係連合講演会
    • Place of Presentation
      神奈川工科大学
    • Year and Date
      2011-03-24
    • Related Report
      2010 Annual Research Report
  • [Presentation] 各種ZnO単結晶基板上のGaN初期成長膜界面のラザフォード後方散乱法による評価2010

    • Author(s)
      井澤佑介、尾賀孝宏*、伊田貴寛、栗山一男、橋本明弘、小竹弘倫, 上條健
    • Organizer
      法政大学イオン工学シンポジウム
    • Place of Presentation
      法政大学
    • Year and Date
      2010-12-10
    • Related Report
      2010 Annual Research Report
  • [Presentation] 化合物系電子デバイス新技術2010

    • Author(s)
      塩島謙次
    • Organizer
      (独)日本学術振興会「半導体界面制御技術」第154委員会研究会
    • Place of Presentation
      産総研臨海副都心センター別館11階
    • Year and Date
      2010-11-25
    • Related Report
      2011 Final Research Report
  • [Presentation] 化合物系電子デバイス新技術2010

    • Author(s)
      塩島謙次
    • Organizer
      独)日本学術振興会「半導体界面制御技術」第154委員会研究会
    • Place of Presentation
      東京都 招待講演
    • Year and Date
      2010-11-25
    • Related Report
      2010 Annual Research Report
  • [Presentation] A New Transfer Process of Epitaxial Graphene2010

    • Author(s)
      A. Hashimoto
    • Organizer
      23rd International Microprocesses and Nanotechnology Conference
    • Place of Presentation
      Kokura, Japan
    • Year and Date
      2010-11-10
    • Related Report
      2011 Final Research Report
  • [Presentation] A New Transfer Process of Epitaxial Graphene”(lnvited)2010

    • Author(s)
      A.Hashimoto
    • Organizer
      23rd International Microprocesses and Nanotechnology Conference
    • Place of Presentation
      Kokura, Japan
    • Year and Date
      2010-11-10
    • Related Report
      2010 Annual Research Report
  • [Presentation] 炭素ドーピングしたn-GaN中欠陥のDLTS、MCTSによる評価2010

    • Author(s)
      山田悠二郎, 塩島謙次, 徳田豊
    • Organizer
      第19回SiC及び関連ワイドギャップ半導体研究会
    • Place of Presentation
      つくば市
    • Year and Date
      2010-10-21
    • Related Report
      2010 Annual Research Report
  • [Presentation] 光応答法によるp-GaNショットキー電極の評価2010

    • Author(s)
      出店克顕、塩島謙次
    • Organizer
      応用物理学会学術講演会
    • Place of Presentation
      長崎大学
    • Year and Date
      2010-09-16
    • Related Report
      2010 Annual Research Report
  • [Presentation] 微傾斜6H-SiC上の数層グラフェンのラマンマッピング評価2010

    • Author(s)
      鴨井督, 木曽田賢治, 蓮池紀幸, 播磨弘, 森田康平, 本明弘
    • Organizer
      応用物理学会学術講演会
    • Place of Presentation
      長崎大学
    • Year and Date
      2010-09-16
    • Related Report
      2010 Annual Research Report
  • [Presentation] エピタキシャルグラフェン引き剥がしプロセスにおけるTi-C結合の形成2010

    • Author(s)
      下辻康広, 橋本明弘, 森田康平, 田中悟
    • Organizer
      第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学
    • Year and Date
      2010-09-15
    • Related Report
      2010 Annual Research Report
  • [Presentation] 微傾斜Si面SiCエピタキシャルグラフェンシード層を用いた大面積転写グラフェン層の顕微ラマン散乱分光測定2010

    • Author(s)
      寺崎博満, 塩島謙次, 森田康平, 田中悟, 日比野浩樹, 橋本明弘
    • Organizer
      応用物理学関係連合講演会
    • Place of Presentation
      富山大学
    • Year and Date
      2010-09-10
    • Related Report
      2009 Annual Research Report
  • [Presentation] RF-MBE growth of InN on HOPG substrate2010

    • Author(s)
      H. Kotake, Y. Shimotsuji, A. Yamamoto and A. Hashimoto
    • Organizer
      16^<th> Int. Conf. on Molecular Beam Epitaxy(MBE 2010)
    • Place of Presentation
      Berlin, Germany
    • Year and Date
      2010-08-26
    • Related Report
      2011 Final Research Report
  • [Presentation] A roll of low-temperature MEE buffer layer in m-plane GaN growth on m-plane ZnO substrate2010

    • Author(s)
      Y. Shimotsuji, A. Yamamoto and A. Hashimoto
    • Organizer
      MBE 2010
    • Place of Presentation
      Berlin, Germany
    • Year and Date
      2010-08-26
    • Related Report
      2011 Final Research Report
  • [Presentation] RF-MBE growth of InN on HOPG substrate2010

    • Author(s)
      H.Kotake, Y.Shimotsuji, A.Yamamoto, A.Hashimoto
    • Organizer
      16^<th> Int.Conf.on Molecular Beam Epitaxy(MBE 2010)
    • Place of Presentation
      Berlin, Germmany
    • Year and Date
      2010-08-26
    • Related Report
      2010 Annual Research Report
  • [Presentation] A roll of low-temperature MEE buffer layer in m-plane GaN growth onm-plane ZnO substrate2010

    • Author(s)
      Y.Shimotsuji, A.Yamamoto, A.Hashimoto
    • Organizer
      16^<th> 1nt.Conf.on Molecular Beam Epitaxy(MBE 2010)
    • Place of Presentation
      Berlin, Germmany
    • Year and Date
      2010-08-26
    • Related Report
      2010 Annual Research Report
  • [Presentation] A1GaN/GaN HEMTの電流コラプスに対する炭素ドーピングの影響2010

    • Author(s)
      國塩直樹, 塩島謙次, 秋山一樹, 山田悠二郎, 柴田龍成, 徳田豊
    • Organizer
      応用物理学関係連合講演会
    • Place of Presentation
      東海大学
    • Year and Date
      2010-03-19
    • Related Report
      2009 Annual Research Report
  • [Presentation] GaN系電子デバイスの信頼性に与える欠陥の影響2010

    • Author(s)
      塩島謙次
    • Organizer
      (独)日本学術振興会「結晶加工と評価技術」第145委員会第121回研究会
    • Place of Presentation
      日明治大学駿河台キャンパス
    • Year and Date
      2010-02-23
    • Related Report
      2011 Final Research Report
  • [Presentation] GaN系電子デバイスの信頼性に与える欠陥の影響2010

    • Author(s)
      塩島謙次
    • Organizer
      (独) 日本学術振興会「結晶加工と評価技術」第145委員会第121回研究会
    • Place of Presentation
      明治大学駿河台キャンパス
    • Year and Date
      2010-02-23
    • Related Report
      2009 Annual Research Report
  • [Presentation] A Breakthrough Toward Wafer-size bi-layer Graphene Transfer2009

    • Author(s)
      A. Hashimoto, H. Terasaki, K. Morita, S. Tanaka and H. Hibino
    • Organizer
      MRS 2009 Fall Meeting, Symp
    • Place of Presentation
      Boston, USA
    • Year and Date
      2009-11-30
    • Related Report
      2011 Final Research Report
  • [Presentation] A Breakthrough Toward Wafer-size bi-layer Graphene Transfer2009

    • Author(s)
      橋本明弘, 寺崎博満, 森田康平, 田中悟, 日比野浩樹
    • Organizer
      Abstracts of MRS 2009 Fall Meeting, Symp. L5.2
    • Place of Presentation
      Boston, USA
    • Year and Date
      2009-11-30
    • Related Report
      2009 Annual Research Report
  • [Presentation] RF-MBE Growth on Vicinal Sapphire Substrate using Migration Enhanced Epitaxy2009

    • Author(s)
      Y. Shimotsuji, A. Yamamoto and A. Hashimoto
    • Organizer
      International Conference Nitride Semiconductors-8(ICNS-8)
    • Place of Presentation
      Jeju Korea
    • Year and Date
      2009-10-23
    • Related Report
      2011 Final Research Report
  • [Presentation] RF-MBE Growth on Vicinal Sapphire Substrate using Migration Enhanced Epitaxy2009

    • Author(s)
      下辻康広, 山本嵩勇, 橋本明弘
    • Organizer
      Abstract book of 8th Int'1 Conference of Nitride Semiconductors (ICNS8), ThP-32
    • Place of Presentation
      ICC Jeju, Korea
    • Year and Date
      2009-10-23
    • Related Report
      2009 Annual Research Report
  • [Presentation] Observation of the effect of carbon in defect formation for MOCVD grown n-GaN on SiC substrates2009

    • Author(s)
      N. Kunishio, K. Shiojima, K. Akiyama, Y. Yamada, Y. Tokuda
    • Organizer
      International Conference Nitride Semiconductors-8(ICNS-8)
    • Place of Presentation
      Jeju Korea
    • Year and Date
      2009-10-22
    • Related Report
      2011 Final Research Report
  • [Presentation] Observation of the effect of carbon in defect formation for MOCVD grown n-GaN on SiC substrates2009

    • Author(s)
      國塩直樹, 塩島謙次, 秋山一樹, 山田悠二郎, 徳田豊
    • Organizer
      International Conference Nitride Semiconductors-8 (ICNS-8)
    • Place of Presentation
      Jeju Korea
    • Year and Date
      2009-10-22
    • Related Report
      2009 Annual Research Report
  • [Presentation] A breakthrough toward wafer-size bi-layer graphene transfer2009

    • Author(s)
      橋本明弘, 寺崎博満, 森田康平, 日比野浩樹, 田中悟
    • Organizer
      Technical Digest of International Conference on Si & Related Materials 2009, (ICSCRM2009), Tu-P-86
    • Place of Presentation
      Nurnberg, Germany
    • Year and Date
      2009-10-17
    • Related Report
      2009 Annual Research Report
  • [Presentation] Double resonant Raman spectra of a large area epitaxial graphene transferred from vicinal Si-face SiC substrate2009

    • Author(s)
      A. Hashimoto, H. Terasaki and S. Tanaka
    • Organizer
      Delegate Manual of 20th Europian Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes, and Nitrides(DIAMOND2009)
    • Place of Presentation
      Athens, Greek
    • Year and Date
      2009-09-10
    • Related Report
      2011 Final Research Report
  • [Presentation] n-GaNの深い準位への炭素の影響2009

    • Author(s)
      秋山一樹, 山田悠二郎, 柴田龍成, 徳田豊, 國塩直樹, 塩島謙次
    • Organizer
      応用物理学会学術講演会
    • Place of Presentation
      富山大学
    • Year and Date
      2009-09-10
    • Related Report
      2009 Annual Research Report
  • [Presentation] Double resonant Raman spectra of a large area epitaxial graphene transferred from vicinal Si-face SiC substrate2009

    • Author(s)
      橋本明弘, 寺崎博満, 田中悟
    • Organizer
      Delegate Manual of 20th Europian Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes, and Nitrides (DIAMOND2009), O62
    • Place of Presentation
      Athens, Greek
    • Year and Date
      2009-09-10
    • Related Report
      2009 Annual Research Report
  • [Presentation] 微傾斜Si面SiCエピタキシャルグラフェンシード層を用いた大面積グラフェン層の転写法2009

    • Author(s)
      寺崎博満, 塩島謙次, 森田康平, 田中悟, 日比野浩樹, 橋本明弘
    • Organizer
      応用物理学関係連合講演会
    • Place of Presentation
      富山大学
    • Year and Date
      2009-09-10
    • Related Report
      2009 Annual Research Report
  • [Presentation] 微傾斜Si面SiCエピタキシャルグラフェンシード層を用いた大面積グラフェン層転写過程のLEEM/AFM観察2009

    • Author(s)
      森田康平, 寺崎博満, 塩島謙次, 田中悟, 日比野浩樹, 橋本明弘
    • Organizer
      応用物理学関係連合講演会
    • Place of Presentation
      富山大学
    • Year and Date
      2009-09-10
    • Related Report
      2009 Annual Research Report
  • [Presentation] 微傾斜Si面SiCエピタキシャルグラフェンシード層を用いた転写グラフェン層のSiO_2基板上への大面積転写 (再転写手法)2009

    • Author(s)
      寺崎博満, 森田康平, 田中悟, 橋本明弘
    • Organizer
      応用物理学関係連合講演会
    • Place of Presentation
      東海大学
    • Year and Date
      2009-03-19
    • Related Report
      2009 Annual Research Report
  • [Presentation] 微傾斜Si面SiCエピタキシャルグラフェンシード層を用いた転写グラフェン層のSiO_2基板上への大面積転写 (ラマン測定)2009

    • Author(s)
      寺崎博満, 森田康平, 田中悟, 橋本明弘
    • Organizer
      応用物理学関係連合講演会
    • Place of Presentation
      東海大学
    • Year and Date
      2009-03-19
    • Related Report
      2009 Annual Research Report
  • [Presentation] RF-MBE法によるHOPG基板上InN成長2009

    • Author(s)
      小竹弘倫, 田畑裕行, 下辻康広, 山本〓勇, 橋本明弘
    • Organizer
      応用物理学関係連合講演会
    • Place of Presentation
      東海大学
    • Year and Date
      2009-03-19
    • Related Report
      2009 Annual Research Report
  • [Presentation] ZnO基板上m面GaN成長の低温MEEバッファ層による効果2009

    • Author(s)
      下辻康広, 朴木博則, 田畑裕行, 山本〓勇, 橋本明弘
    • Organizer
      応用物理学関係連合講演会
    • Place of Presentation
      東海大学
    • Year and Date
      2009-03-19
    • Related Report
      2009 Annual Research Report
  • [Presentation] A breakthrough toward wafer-size bi-layer graphene transfer2009

    • Author(s)
      A. Hashimoto, H. Terasaki, K. Morita, H. Hibino and S. Tanaka
    • Organizer
      Technical Digest of International Conference on Silicon Carbide & Related Materials 2009,(ICSCRM2009)
    • Place of Presentation
      Germany
    • Related Report
      2011 Final Research Report
  • [Book] 化合物半導体大全2009

    • Author(s)
      木浦成俊,塩島謙次, 他
    • Publisher
      株式会社電子ジャーナル
    • Related Report
      2011 Final Research Report
  • [Remarks] 平成23年度電気関係学会北陸支部連合大会優秀発表賞、田中浩太郎・下辻康広・橋本明弘・塩島謙次(福井大院工)・田中悟(九州大工)、"GaN上への大面積グラフェン転写およびグラフェン挿入による電極の低抵抗化"、2011年9月17日福井大、D.集積回路設計・素子セッション

    • Related Report
      2011 Final Research Report

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Published: 2009-04-01   Modified: 2016-04-21  

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