| Budget Amount *help |
¥4,680,000 (Direct Cost: ¥3,600,000、Indirect Cost: ¥1,080,000)
Fiscal Year 2011: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000)
Fiscal Year 2010: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
Fiscal Year 2009: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
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| Research Abstract |
We proposed a new technology for surface passivation of GaN by graphene layers, which have no dangling bonds on the surface, in order to improve electron device characteristics. Large area transfer of the graphene layers from SiC substrates on GaN was succeeded, and oxygen plasma etching process was established. We found Schottky barrier lowering by inserting the graphene layers into Ni/GaN interfaces.
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