Surface passivation of GaN by graphene layers
Project/Area Number |
21560352
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Research Category |
Grant-in-Aid for Scientific Research (C)
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Allocation Type | Single-year Grants |
Section | 一般 |
Research Field |
Electron device/Electronic equipment
|
Research Institution | University of Fukui |
Principal Investigator |
SHIOJIMA Kenji 福井大学, 大学院・工学研究科, 准教授 (70432151)
|
Co-Investigator(Kenkyū-buntansha) |
HASHIMOTO Akihiro 福井大学, 大学院・工学研究科, 准教授 (10251985)
|
Project Period (FY) |
2009 – 2011
|
Project Status |
Completed (Fiscal Year 2011)
|
Budget Amount *help |
¥4,680,000 (Direct Cost: ¥3,600,000、Indirect Cost: ¥1,080,000)
Fiscal Year 2011: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000)
Fiscal Year 2010: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
Fiscal Year 2009: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
|
Keywords | グラフェン / 表面保護 / 電子デバイス / GaN |
Research Abstract |
We proposed a new technology for surface passivation of GaN by graphene layers, which have no dangling bonds on the surface, in order to improve electron device characteristics. Large area transfer of the graphene layers from SiC substrates on GaN was succeeded, and oxygen plasma etching process was established. We found Schottky barrier lowering by inserting the graphene layers into Ni/GaN interfaces.
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Report
(4 results)
Research Products
(82 results)
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[Presentation] P型GaN中の深い準位の評価2011
Author(s)
山田悠二郎,長谷川晶一,南部大翔,本田銀煕,徳田豊,塩島謙次
Organizer
第20回SiC及び関連ワイドギャップ半導体研究会
Place of Presentation
名古屋市
Year and Date
2011-12-08
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