Fabrication of planar-type GaN-based surface emitting devices

• Project/Area Number: 21560361
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Electron device/Electronic equipment
• Research Institution: Kogakuin University
• Principal Investigator: HONDA Tohru 工学院大学, 工学部, 教授 (20251671)
• Project Period (FY): 2009 – 2011
• Project Status: Completed (Fiscal Year 2011)
• Budget Amount: ¥4,680,000 (Direct Cost: ¥3,600,000、Indirect Cost: ¥1,080,000); Fiscal Year 2011: ¥910,000 (Direct Cost: ¥700,000、Indirect Cost: ¥210,000); Fiscal Year 2010: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000); Fiscal Year 2009: ¥2,470,000 (Direct Cost: ¥1,900,000、Indirect Cost: ¥570,000)
• Keywords: 光デバイス / 光回路 / 窒化ガリウム / 紫外発光 / 発光ダイオード / 集積化 / 面発光 / 3原色発光 / 透明電極 / MBE

Research Abstract

GaN-based light-emitting pixels for the micro displays require the large-scale integration and their cost-effective fabrication. In this study, GaN-based Schottky-type LEDs and their integration were investigated. I found the face-pack process was effective for their reduction of the reverse-bias leakage current. This is also effective for the increase of light-emission efficiency. I have also proposed the MgZnO-based transparent electrode for the light-emitting devices.

Research Products

• [Journal Article] Reduction of reverse-bias leakage current in GaN-based Schottky-type light-emitting diodes by surface modification using the aluminum facepack technique (2012)
  • Author(s): Tohru Honda, Naoyuki Sakai, Shigetoshi Komiyama, Masato Hayashi and Tatsuhiro Igaki
  • Journal Title: Physica Status Solidi(C) Volume: 9巻 Issue: 3-4 Pages: 778-781
  • DOI: 10.1002/pssc.201100387
  • Peer Reviewed
• [Journal Article] Surface Recombination of hexagonal GaN crystals (2011)
  • Author(s): Takeshi Onuma, Naoyuki Sakai, Takashi Okuhata, Atsushi A. Yamaguchi, and Tohru Honda
  • Journal Title: Physica Status Solidi(C) Volume: 8巻 Issue: 7-8 Pages: 2321-2323
  • DOI: 10.1002/pssc.201001013
  • Peer Reviewed
• [Journal Article] Photoluminescence and photo reactivity affected by oxygen defects in crystal-oriented rutile thin film fabricated by molecular precursor method (2010)
  • Author(s): H. Nagai, S. Aoyama, H. Hara, C. Mochizuki, I. Takano, T. Honda and M. Sato
  • Journal Title: Journal of Materials Science Volume: 45巻 Issue: 20 Pages: 5704-5710
  • DOI: 10.1007/s10853-010-4640-z
  • Peer Reviewed
• [Journal Article] Fabrication of c-axis oriented Ga-doped MgZnO-based UV transparent electrodes by molecular precursor method (2010)
  • Author(s): T, Honda, T. Oda, Y. Mashiyama, H. Hara and M. Sato
  • Journal Title: Physica Status Solidi(C) Volume: 7巻 Issue: 10 Pages: 2471-2473
  • DOI: 10.1002/pssc.200983871
  • Peer Reviewed
• [Journal Article] Fabrication of c-axis oriented Ga-doped MgZnO-based UV transparent electrodes by molecular precursor method (2010)
  • Author(s): T.Honda, T.Oda, Y.Mashiyama, H.Hara, M.Sato
  • Journal Title: Physica Status Solidi (C) Volume: 7 Pages: 2471-2473
  • Peer Reviewed
• [Journal Article] Photoluminescence and photo reactivity affected by oxygen defects in crystal-oriented rutile thin film fabricated by molecular precursor method (2010)
  • Author(s): H.Nagai, S.Aoyama, H.Hara, C.Mochizuki, I.Takano, T.Honda, M.Sato
  • Journal Title: Journal of Materials Science Volume: 45 Pages: 5704-5710
  • Peer Reviewed
• [Journal Article] 疑似(111)Al基板上GaN薄膜のRF-MBE成長 (2010)
  • Author(s): 本田徹, 林才人, 後藤大雅, 井垣辰浩
  • Journal Title: 電子情報通信学会技術研究報告 Volume: 2010-100 Pages: 11-14
  • NAID: 110008152394
• [Journal Article] Formation of AlN layer on(111)Al substrate by ammonia nitridation (2009)
  • Author(s): Tohru Honda, Hiromi Yamamoto, Masashi Sawadaishi, Satoshi Taguchi, Kouki Sasaya
  • Journal Title: Journal of Crystal Growth 311 Pages: 1994-1996
  • Peer Reviewed
• [Journal Article] ショットキー型紫外発光ダイオードを用いたRGB発光素子の製作 (2009)
  • Author(s): 本田徹, 野崎理, 坂井直之, 野口和之
  • Journal Title: 信学技報 2009-122 Pages: 69-72
  • NAID: 110007504289
• [Presentation] AlおよびAlO_x膜堆積が極性GaNのPL強度にえる影響 (2012)
  • Author(s): 坂井直之、尾沼猛儀、山口敦史、山口智広、本田徹
  • Organizer: 2012年春季第59回応用物理学関係連合講演会
  • Place of Presentation: 早稲田大学、東京
  • Year and Date: 2012-03-16
• [Presentation] Al緩衝層を用いた化合物原料MBE法による(0001)4H-SiC上GaN薄膜の製作 (2012)
  • Author(s): 長瀬赳史、篠原直也、林才人、杉浦洋平、山口智広、本田徹
  • Organizer: 2012年春季第59回応用物理学関係連合講演会
  • Place of Presentation: 早稲田大学、東京
  • Year and Date: 2012-03-16
• [Presentation] RF-MBE伝による(GaN/AlN)交互供給緩衝層上GaN薄膜のX線回折測定 (2012)
  • Author(s): 杉浦洋平、井垣辰浩、林才人、多次見大樹、山口智広、本田徹
  • Organizer: 2012年春季第59回応用物理学関係連合講演会
  • Place of Presentation: 早稲田大学、東京
  • Year and Date: 2012-03-16
• [Presentation] 極性・非極性バルクZnO表面におけるCLスペクトルの比較 (2012)
  • Author(s): 尾沼猛儀、大林亨、山口智広、山口敦史、本田徹
  • Organizer: 2012年春季第59回応用物理学関係連合講演会
  • Place of Presentation: 早稲田大学、東京
  • Year and Date: 2012-03-15
• [Presentation] 分子プレカーサー法によるZnO系透明電極製作におけるオゾン洗浄の効果 (2012)
  • Author(s): 安野泰平, 小田拓人, 佐藤光史, 原広樹, 本田徹
  • Organizer: 弟59回応用物理学関係連合講演会
  • Place of Presentation: 早稲田大学、東京
  • Year and Date: 2012-03-15
• [Presentation] Low temperature of GaN on pseudo(111) Al substrates by RF-MBE (2012)
  • Author(s): M. Hayashi, T. Goto, T. Yamaguchi, T. Igaki, and T. Honda
  • Organizer: Materials Research Society2011Fall Meeting(MRS 2011F)
  • Place of Presentation: Boston, USA
• [Presentation] (GaN/AlN)多重緩衝層を用いたRF-MBE法によるSi基板上GaN薄膜成長 (2011)
  • Author(s): 井垣辰浩、林才人、山口智広、本田徹
  • Organizer: 応用物理学会結晶工学分科会主催2011年・年末講演会
  • Place of Presentation: 学習院大学、東京
  • Year and Date: 2011-12-15
• [Presentation] InNおよびGaN成長における原子脱離過程その場観察 (2011)
  • Author(s): 山口智広、荒木努、本田徹、名西〓之
  • Organizer: 応用物理学会結晶工学分科会主催2011年・年末講演会
  • Place of Presentation: 学習院大学、東京
  • Year and Date: 2011-12-15
• [Presentation] XPS spectra of c-face GaN and ZnO crystals (2011)
  • Author(s): Tohru Honda
  • Organizer: The 10th International Symposium on Advanced Technology (ISAT-10)
  • Place of Presentation: 北京化工大学(BUCT), Peking, China
  • Year and Date: 2011-11-17
• [Presentation] X-ray diffraction pattern of ZnO layer grown by compound source MBE (2011)
  • Author(s): R.Amiya, Y.Sugiura, T.Yamaguchi, T.Honda
  • Organizer: The 10th International Symposium on Advanced Technology (ISAT-10)
  • Place of Presentation: 北京化工大学(BUCT),Peking,China
  • Year and Date: 2011-11-17
• [Presentation] Ozone treatment of the substrates for the ZnO deposition by molecular precursor method (2011)
  • Author(s): T.Oda, H.Hara, Y.Sugiura, T.Yasuno, T.Yamaguchi, M.Sato, T.Honda
  • Organizer: The 10th International Symposium on Advanced Technology (ISAT-10)
  • Place of Presentation: 北京化工大学(BUCT),Peking,China
  • Year and Date: 2011-11-17
• [Presentation] 極性および非極性GaN表面における表面再結合過程 (2011)
  • Author(s): 坂井直之、井垣辰浩、尾沼猛儀、山口敦史、山口智広、本田徹
  • Organizer: 2011年秋季第72回応用物理学会学術講演会
  • Place of Presentation: 山形大学、山形
  • Year and Date: 2011-09-01
• [Presentation] 六方晶GaNとZnOにおける表面再結合の比較 (2011)
  • Author(s): 尾沼猛儀、坂井直之、井垣辰浩、山口智広、山口敦史、本田徹
  • Organizer: 2011年秋季第72回応用物理学会学術講演会
  • Place of Presentation: 山形大学、山形
  • Year and Date: 2011-09-01
• [Presentation] 化合物原料MBE法を用いたZnO薄膜の結晶成長とその評価 (2011)
  • Author(s): 杉浦洋平、小田拓人、小畑聡、芳原義大、尾沼猛儀、山口智広、本田徹
  • Organizer: 2011年秋季第72回応用物理学会学術講演会
  • Place of Presentation: 山形大学、山形
  • Year and Date: 2011-08-31
• [Presentation] RF-MBE法による(GaN/AlN)交互供給緩衝層上GaN薄膜成長 (2011)
  • Author(s): 林才人、井垣辰浩、杉浦洋平、後藤大雅、山口智広、本田徹
  • Organizer: 2011年秋季第72回応用物理学会学術講演会
  • Place of Presentation: 山形大学、山形
  • Year and Date: 2011-08-30
• [Presentation] Growths of InN/InGaN Periodic Structure and Thick InGaN film using droplet elimination process by radical-beam irradiation (2011)
  • Author(s): T.Yamaguchi, T.Araki, T.Honda, E.Yoon, Y.Nanishi
  • Organizer: The 28th North American Conference on Molecular Beam Epitaxy (NAMBE 2011)
  • Place of Presentation: San Diego, California, USA
  • Year and Date: 2011-08-16
• [Presentation] Comparative Study of Surface recombination in hexagonal GaN and ZnO surfaces (2011)
  • Author(s): T.Onuma, N.Sakai, T.Igaki, T.Yamaguchi, A.A.Yamaguchi, T.Honda
  • Organizer: The 28th North American Conference on Molecular Beam Epitaxy (NAMBE 2011)
  • Place of Presentation: San Diego, California, USA
  • Year and Date: 2011-08-15
• [Presentation] "Built-in potential along the c-axis in MBE-grown GaN layers observed by angle resolved X-ray photoelectron spectroscopy (2011)
  • Author(s): T.Honda, T.Igaki, T.Yamaguchi, Y.Kumagai, A.Koukitu
  • Organizer: The 28th North American Conference on Molecular Beam Epitaxy (NAMBE 2011)
  • Place of Presentation: San Diego, California, USA
  • Year and Date: 2011-08-14
• [Presentation] DERI法によるIn系窒化物半導体の結晶成長 (2011)
  • Author(s): 山口智広、荒木努、本田徹、名西〓之
  • Organizer: 日本学術振興会ワイドギャップ半導体光・電子デバイス第162委員会第75回研究会
  • Place of Presentation: 東京工業大学田町インキュベーションセンタ,東京
  • Year and Date: 2011-07-25
• [Presentation] Reduction of reverse-bias leakage current in GaN-based Schottky-type light-emitting diodes by a surface modification (2011)
  • Author(s): T.Honda, N.Sakai, S.Komiyama, M.Hayashi, T.Igaki
  • Organizer: 9th International Conference on Nitride Semicon ductors (ICNS 2011)
  • Place of Presentation: SECC, Glasgow, Scotland, UK
  • Year and Date: 2011-07-12
• [Presentation] In situ monitoring techniques by DERI method (2011)
  • Author(s): T.Yamaguchi, K.Wang, T.Araki, T.Honda, E.Yoon, Y.Nanishi
  • Organizer: 30th Electronic Materials Symposium (EMS-30)
  • Place of Presentation: Laforet Biwako, Shiga, Japan
  • Year and Date: 2011-07-11
• [Presentation] Polarity control of MgZnO transparent electrodes by molecular precursor method (2011)
  • Author(s): T.Oda, T.Kizu, H.Hara, Y.Sugiura, M.Sato, T.Honda
  • Organizer: 30th Electronic Materials Symposium (EMS-30)
  • Place of Presentation: Laforet Biwako, Shiga, Japan
  • Year and Date: 2011-07-11
• [Presentation] Recombination dynamics in polar and nonpolar GaN surfaces (2011)
  • Author(s): N.Sakai, T.Igaki, T.Onuma, A.A.Yamaguchi, T.Yamaguchi, T.Honda
  • Organizer: 30th Electronic Materials Symposium (EMS-30)
  • Place of Presentation: Laforet Biwako, Shiga, Japan
  • Year and Date: 2011-07-09
• [Presentation] Surface recombination in polar and nonpolar GaN surfaces (2011)
  • Author(s): N.Sakai, T.Onuma, A.A.Yamaguchi, T.Honda
  • Organizer: 5th Asia-Pacific Workshop on Widegap Semicon ductors (APWS 2011)
  • Place of Presentation: Toba, Mie, Japan
  • Year and Date: 2011-05-25
• [Presentation] ZnO growth for transparent electrodes by compound-source MBE (2011)
  • Author(s): Y.Sugiura, T.Oda, S.Obata, Y.Yoshihara, T.Onuma, T.Honda
  • Organizer: 5th Asia-Pacific Workshop on Widegap Semiconductors (APWS 2011)
  • Place of Presentation: Toba, Mie, Japan
  • Year and Date: 2011-05-25
• [Presentation] Initial growth monitoring in GaN epitaxial growth on (GaN/AlN) buffer layer by RF-molecular beam epitaxy (2011)
  • Author(s): M.Hayashi, T.Goto, T.Igaki, J.Sugawara, R.Yonezawa, Y.Sugiura, T.Honda
  • Organizer: 5th Asia-Pacific Workshop on Widegap Semicon ductors (APWS 2011)
  • Place of Presentation: Toba, Mie, Japan
  • Year and Date: 2011-05-25
• [Presentation] GaN growth on pseudo (111)Al substrates by RF-MBE (2011)
  • Author(s): T.Honda, M.Hayashi, T.Goto, T.Igaki
  • Organizer: E-MRS ICAM IUMRS 2011 Spring Meeting (E-MRS)
  • Place of Presentation: Nice, France
  • Year and Date: 2011-05-09
• [Presentation] 分子プレカーサー法により形成したp型酸化銅(1)透明薄膜の半導体特性 (2011)
  • Author(s): 鈴木達也, 永井裕己, 原広樹, 望月千尋, 鷹野一郎, 本田徹, 佐藤光史
  • Organizer: 日本化学会第91春季年会
  • Place of Presentation: 神奈川大学横浜キャンパス, 横浜、神奈川, 4D7-12.
  • Year and Date: 2011-03-27
• [Presentation] 銀ナノ粒子-チタニアアロイ薄膜の導電性と光電流密度 (2011)
  • Author(s): DANIEL Likius Shipwiisho, 永井裕己, 青山宗平, 原広樹, 望月千尋, 鷹野一朗, 本田徹, 佐藤光史
  • Organizer: 日本化学会第91春季年会
  • Place of Presentation: 神奈川大学横浜キャンパス,横浜、神奈川,4D7-21.
  • Year and Date: 2011-03-27
• [Presentation] RF-MBE法を用いた(GaN/AlN)交互供給緩衝層上GaN薄膜成長 (2011)
  • Author(s): 林才人, 後藤大雅, 井垣辰浩, 菅原順平, 米澤亮輔, 杉浦洋平, 本田徹
  • Organizer: 第58回応用物理学関係連合講演会
  • Place of Presentation: 神奈川工科大学、厚木、神奈川, 26p-BZ-7
  • Year and Date: 2011-03-26
• [Presentation] 化合物原料MBE法によるZnO薄膜の製作検討 (2011)
  • Author(s): 杉浦洋平, 小田拓人, 小畑聡, 芳原義大, 尾沼猛儀, 本田徹
  • Organizer: 第58回応用物理学関係連合講演会
  • Place of Presentation: 神奈川工科大学、厚木、神奈川, 26p-BZ-7
  • Year and Date: 2011-03-26
• [Presentation] Fabrication of c-axis oriented MgZnO transparent electrodes by molecular precursor method (2011)
  • Author(s): T.Oda, T.Kidu, H.Hara, Y.Sugiura, M.Sato, T.Honda
  • Organizer: The 38th Conference on the Physics and Chemistry of Surfaces and Interfaces (PCSI-38)
  • Place of Presentation: San Diego, California, USA, We 1200.
  • Year and Date: 2011-01-19
• [Presentation] Built-in potential in GaN crystals by angle resolved X-ray photoelectron spectroscopy (2011)
  • Author(s): T.Honda, T.Igaki, Y.Kumagai, A.Kokitu
  • Organizer: The 38th Conference on the Physics and Chemistry of Surfaces and Interfaces (PCSI-38)
  • Place of Presentation: San Diego, California, USA, Mo 1220.
  • Year and Date: 2011-01-17
• [Presentation] In-plane epitaxial relationship of(0001) sapphire grown by compound-source MBE (2011)
  • Author(s): Y. Sugiura, T. Oda, T. Onuma, T. Yamaguchi, and T. Honda
  • Organizer: Materials Research Society 2011 Fall Meeting(MRS 2011F)
  • Place of Presentation: Boston, USA
• [Presentation] Ozone treatment of the substrates for the ZnO deposition by molecular precursor method (2011)
  • Author(s): T. Oda, H. Hara, Y. Sugiura, T. Yasuno, T. Yamaguchi, M. Sato, and T. Honda
  • Organizer: The 10th International Symposium on Advanced Technology(ISAT-10)
  • Place of Presentation: Beijing, China
• [Presentation] X-ray diffraction pattern of ZnO layer grown by compound source MBE (2011)
  • Author(s): R. Amiya, Y. Sugiura, T. Yamaguchi and T. Honda
  • Organizer: The 10th International Symposium on Advanced Technology(ISAT-10
  • Place of Presentation: Beijing, China
• [Presentation] XPS spectra of c-face GaN and ZnO crystals (2011)
  • Author(s): T. Honda
  • Organizer: The 10th International Symposium on Advanced Technology(ISAT-10)
  • Place of Presentation: Beijing, China
• [Presentation] Built-in potential along the C-axis in MBE-grown GaN layers observed by angle resolved X-ray photoelectron spectroscopy (2011)
  • Author(s): T. Honda, T. Igaki, T. Yamaguchi, Y. Kumagai and A. Koukitu
  • Organizer: The 28th North American Conference on Molecular Beam Epitaxy(NAMBE 2011)
  • Place of Presentation: San Diego, California, USA
• [Presentation] Growths of InN/InGaN Pariodic Structure and Thick InGaN film using dropment elimination process by radical-beam irradiation (2011)
  • Author(s): T. Yamaguchi, T. Araki, T. Honda, E. Yoon and Y. Nanishi
  • Organizer: The 28th North American Conference on Molecular Beam Epitaxy(NAMBE2011)
  • Place of Presentation: San Diego, California, USA
• [Presentation] Comparative Study of Surface recombination in hexagonal GaN and ZnO surfaces (2011)
  • Author(s): T. Onuma, N. Sakai, T. Igaki, T. Yamaguchi, A. A. Yamaguchi and T. Honda
  • Organizer: The 28th North American Conference on Molecular Beam Epitaxy(NAMBE2011)
  • Place of Presentation: San Diego, California, USA
• [Presentation] Reduction of reverse-bias leakage current in GaN-based Schottky-type light-emitting diodes by a surface modification (2011)
  • Author(s): T. Honda, N. Sakai, S. Komiyama, M. Hayashi and T. Igaki
  • Organizer: 9th International Conference on Nitride Semiconductors(ICNS2011)
  • Place of Presentation: Glasgow, Scotland, UK
• [Presentation] GaN growth on pseudo(111) Al substrates by RF-MBE (2011)
  • Author(s): T. Honda, M. Hayashi, T. Goto and T. Igaki
  • Organizer: E-MRS ICAM IUMRS2011Spring Meeting(E-MRS)
  • Place of Presentation: Nice, France
• [Presentation] Fabrication of c-axis oriented MgZnO transparent electrodes by molecular precursor method (2011)
  • Author(s): T. Oda, T. Kidu, H. Hara, Y. Sugiura, M. Sato and T. Honda
  • Organizer: The 38th Conference on the Physics and Chemistry of Surfaces and Interfaces(PCSI-38)
  • Place of Presentation: San Diego, California, USA
• [Presentation] Built-in potential in GaN crystals by angle resolved X-ray photoelectron spectroscopy (2011)
  • Author(s): T. Honda, T. Igaki, Y. Kumagai and A. Kokitu
  • Organizer: The 38th Conference on the Physics and Chemistry of Surfaces and Interfaces(PCSI-38)
  • Place of Presentation: San Diego, California, USA
• [Presentation] 化合物原料MBE法によるGaN/(111)Siの高品質化の検討 (2010)
  • Author(s): 長瀬赳史, 眼目貴大, 本田徹
  • Organizer: 応用物理学会結晶工学分科会2010年度年末講演会
  • Place of Presentation: 学習院大学, 東京, No.4.
  • Year and Date: 2010-12-17
• [Presentation] 化合物原料MBE法によるZnO薄膜の低温堆積検討 (2010)
  • Author(s): 杉浦洋平、小田拓人、小畑聡、芳原義大、尾沼猛儀、本田徹
  • Organizer: 応用物理学会結晶工学分科会2010年度年末講演会
  • Place of Presentation: 学習院大学, 東京, No.18.
  • Year and Date: 2010-12-17
• [Presentation] MBE法による交互供給バッファー層を用いたGaN薄膜の製作 (2010)
  • Author(s): 後藤大雅、林才人、井垣辰浩、菅原順平、米澤亮輔、本田徹
  • Organizer: 応用物理学会結晶工学分科会2010年度年末講演会
  • Place of Presentation: 学習院大学, 東京, No.3.
  • Year and Date: 2010-12-17
• [Presentation] 疑似(111)Al基板上GaN薄膜のRF-MBE成長 (2010)
  • Author(s): 本田徹, 林才人, 後藤大雅, 井垣辰浩
  • Organizer: 電子情報通信学会エレクトロニクスソサイエティ, レーザ・量子エレクトロニクス研究会(LQE)11月研究会
  • Place of Presentation: 大阪大学中之島ホール, 大阪, 大阪府
  • Year and Date: 2010-11-11
• [Presentation] The Electrical and optical properties of p-type cuprous oxides transparent thin films by the molecular precursor method (2010)
  • Author(s): T.Suzuki, H.Nagai, C.Mochizuki, H.Hara, I.Takano, T.Honda, M.Sato
  • Organizer: The 9th International Symposium on Advanced Technology (ISAT-9)
  • Place of Presentation: Shinjuku, Tokyo, Japan, P-18.
  • Year and Date: 2010-11-06
• [Presentation] Fabrication of ZnO layers by compound source molecular beam epitaxy (2010)
  • Author(s): Y.Sugiura, T.Oda, S.Obata, Y.Yoshihara, T.Honda
  • Organizer: The 9th International Symposium on Advanced Technology (ISAT 9)
  • Place of Presentation: Shinjuku, Tokyo, Japan, P-25.
  • Year and Date: 2010-11-06
• [Presentation] Polarity control of MgZnO thin films by molecular precursor method (2010)
  • Author(s): T.Oda, T.Kizu, Y.Sugiura, H.Hara, M.Sato, T.Honda
  • Organizer: The 9th International Symposium on Advanced Technology (ISAT-9)
  • Place of Presentation: Shinjuku, Tokyo, Japan, P-26.
  • Year and Date: 2010-11-06
• [Presentation] GaN epitaxial growth on pseudo Al substrates by RF-MBE (2010)
  • Author(s): M.Hayashi, T.Goto, T.Igaki, J.Sugawara, R.Yonezawa, S.Taguchi, T.Honda
  • Organizer: The 9th International Symposium on Advanced Technology (ISAT-9)
  • Place of Presentation: Shinjuku, Tokyo, Japan, P-27.
  • Year and Date: 2010-11-06
• [Presentation] Surface recombination mechanism in hexagonal GaN crystals (2010)
  • Author(s): N.Sakai, T.Onuma, T.Okuhata, A.A.Yamaguchi, T.Honda
  • Organizer: The 9th International Symposium on Advanced Technology (ISAT-9)
  • Place of Presentation: Shinjuku, Tokyo, Japan, P-28.
  • Year and Date: 2010-11-06
• [Presentation] Polarity control of (0001)GaN epitaxial layers grown by RF-MBE (2010)
  • Author(s): T.Igaki, M.Hayashi, T.Goto, S.Taguchi, T.Honda
  • Organizer: The 9th International Symposium on Advanced Technology (ISAT-9)
  • Place of Presentation: Shinjuku, Tokyo, Japan, P-29.
  • Year and Date: 2010-11-06
• [Presentation] Fabrication of RGB pixels based on UV Schottky-type LEDs (2010)
  • Author(s): Tohru Honda
  • Organizer: The 9th International Symposium on Advanced Technology (ISAT-9)
  • Place of Presentation: Shinjuku, Tokyo, Japan, IL-9
  • Year and Date: 2010-11-05
• [Presentation] RF-MBE法による擬似Al基板上へのGaN薄膜の低温成長 (2010)
  • Author(s): 後藤大雅, 林才人, 井垣辰浩, 田口悟, 本田徹
  • Organizer: 東北大学多元物質科学研究所窒化物ナノ・エレクトロニクス材料研究センター講演会
  • Place of Presentation: 東北大学片平さくらホール,仙台,宮城県.
  • Year and Date: 2010-11-04
• [Presentation] RF励起窒素を用いた化合物原料MBE法によるGaN/(111)Siの製作検討 (2010)
  • Author(s): 長瀬赳史, 眼目貴大, 本田徹
  • Organizer: 東北大学多元物質科学研究所窒化物ナノ・エレクトロニクス材料研究センター講演会
  • Place of Presentation: 東北大学片平さくらホール,仙台,宮城県.
  • Year and Date: 2010-11-04
• [Presentation] Surface recombination of hexagonal GaN crystals (2010)
  • Author(s): N.Sakai, T.Onuma, T.Okuhata, A.A.Yamaguchi, T.Honda
  • Organizer: The International Workshop on Nitride semiconductors (IWN2010).
  • Place of Presentation: Marriott Tampa Waterside Hotel & Marina, Tampa Bay, Florida, USA, GP 1.20.
  • Year and Date: 2010-09-20
• [Presentation] 分子プレカーサー法によるMgZnO薄膜の極性制御 (2010)
  • Author(s): 小田拓人, 木津拓人, 原広樹, 杉浦洋平, 佐藤光史, 本田徹
  • Organizer: 第71回応用物理学会学術講演会
  • Place of Presentation: 長崎大学文京キャンパス, 長崎, 17a-NE-4.
  • Year and Date: 2010-09-17
• [Presentation] 分子プレカーサー法によるp型酸化銅(1)透明薄膜の形成 (2010)
  • Author(s): 鈴木達也, 永井裕己, 望月千尋, 原広樹, 鷹野一朗, 本田徹, 佐藤光史
  • Organizer: 第71回応用物理学会学術講演会
  • Place of Presentation: 長崎大学文京キャンパス, 長崎, 14p-NE-1.
  • Year and Date: 2010-09-14
• [Presentation] RF-MBE法を用いた疑似Al基板上GaN成長 (2010)
  • Author(s): 林才人, 後藤大雅, 井垣辰浩, 田口悟, 本田徹
  • Organizer: 第71回応用物理学会学術講演会
  • Place of Presentation: 長崎大学文京キャンパス, 長崎, 14a-C-7.
  • Year and Date: 2010-09-14
• [Presentation] GaN growth on pseudo Al substrates by molecular beam epitaxy at low temperatures (2010)
  • Author(s): T.Goto, M.Hayashi, T.Igaki, S.Taguchi, T.Honda
  • Organizer: 16th International Conference on molecular beam epitaxy (ICMBE 2010).
  • Place of Presentation: bcc Belriner congress center, Belrin, Germany, P 2.21.
  • Year and Date: 2010-08-23
• [Presentation] MBE法による交互供給バッッファ層を用いたGaN薄膜の製作検討 (2010)
  • Author(s): T.Goto, T.Honda
  • Organizer: The 33th International Symposium on Optical communications
  • Place of Presentation: Makuhari, Chiba, Japan, E-2.
  • Year and Date: 2010-08-11
• [Presentation] RF-MBE法による擬似Al基板上へのGaN成長 (2010)
  • Author(s): M.Hayashi, T.Honda
  • Organizer: The 33th International Symposium on Optical communications
  • Place of Presentation: Makuhari, Chiba, Japan, P2-15.
  • Year and Date: 2010-08-10
• [Presentation] GaN結晶における面方位とフォトルミネッセンスの発光寿命の関係 (2010)
  • Author(s): N.Sakai, T.Honda
  • Organizer: The 33th International Symposium on Optical communications
  • Place of Presentation: Makuhari, Chiba, Japan, P3-4.
  • Year and Date: 2010-08-10
• [Presentation] RF-MBE法によるGaN薄膜成長における極性制御の検討 (2010)
  • Author(s): T.Igaki, T.Honda
  • Organizer: The 33th International Symposium on Optical communications
  • Place of Presentation: Makuhari, Chiba, Japan, P3-12.
  • Year and Date: 2010-08-10
• [Presentation] 分子プレーカーサー法によるGa-doped MgZnO薄膜の配向性及び膜厚依存性の検討 (2010)
  • Author(s): T.Oda, T.Honda
  • Organizer: The 33th International Symposium on Optical communications
  • Place of Presentation: Makuhari, Chiba, Japan, P2-29.
  • Year and Date: 2010-08-10
• [Presentation] 化合物原料MBE法によるZnO薄膜の製作検討 (2010)
  • Author(s): Y.Sugiura, T.Honda
  • Organizer: The 33th International Symposium on Optical communications
  • Place of Presentation: Makuhari, Chiba, Japan, P 1-22.
  • Year and Date: 2010-08-09
• [Presentation] Fabrication of c-axis oriented MgZnO films by molecular precursor method (2010)
  • Author(s): T.Oda, T.Kizu, H.Hara, Y.Sugiyama, M.Sato, T.Honda
  • Organizer: 29th Electronic Materials Symposium (EMS-29)
  • Place of Presentation: Laforet Shuzenji, Izu, Shizuoka, Japan, We2-6.
  • Year and Date: 2010-07-16
• [Presentation] III-N growth on pseudo Al substrates by MBE at low temperatures (2010)
  • Author(s): M.Hayashi, T.Goto, T.Igaki, S.Taguchi, T.Honda
  • Organizer: 29th Electronic Materials Symposium (EMS-29)
  • Place of Presentation: Laforet Shuzenji, Izu, Shizuoka, Japan, Th6-12.
  • Year and Date: 2010-07-15
• [Presentation] Light propagation in GaN-based Schottky-type diodes using FDTD method (2010)
  • Author(s): N.Sakai, T.Kobayashi, T.Honda
  • Organizer: 29th Electronic Materials Symposium (EMS-29)
  • Place of Presentation: Laforet Shuzenji, Izu, Shizuoka, Japan, Th2-4.
  • Year and Date: 2010-07-15
• [Presentation] XPS study on (0001) and (000-1)GaN layers on sapphire substrates grown by molecular beam epitaxy (2010)
  • Author(s): T.Honda, K.Noguchi, N.Sakai, S.Taguchi, T.Goto, T.Igaki, M.Hayashi
  • Organizer: The 3rd International Symposium on Growth of III-Nitrides
  • Place of Presentation: Montpellier Convention Center, Montpellier, France
  • Year and Date: 2010-07-05
• [Presentation] 小型フラットディスプレイのための窒化ガリウム系集積化発光素子の製作 (2010)
  • Author(s): 本田徹
  • Organizer: 物質・材料研究機構光学センシング材料グループ研究会
  • Place of Presentation: 物質・材料研究機構, つくば, 茨城県
  • Year and Date: 2010-06-04
• [Presentation] Polarity control of (0001)GaN epitaxial layers grown by RF-MBE (2010)
  • Author(s): T.Igaki, M.Hayashi, T.Goto, S.Taguchi, T.Honda
  • Organizer: The 37th International Symposium on Compound Semiconductors (ISCS 2010).
  • Place of Presentation: Takamatsu Symbol Tower, Kagawa, Japan, FrP-63.
  • Year and Date: 2010-05-31
• [Presentation] Fabrication of c-axis oriented MgZnO transparent electrode by molecular precursor method (2010)
  • Author(s): T.Oda, H.Hara, C.Mochizuki, M.Sato, T.Honda
  • Organizer: 8th International Symposium on Semiconductor Light Emitting Devices (ISSLED2010).
  • Place of Presentation: Peking University, Beijing, China, P16
  • Year and Date: 2010-05-20
• [Presentation] Surface Modification of (0001)GaN and its application to RGB pixels based on UV Schottky-type LEDs (2010)
  • Author(s): T.Honda, N.Sakai, T.Nozaki
  • Organizer: 8th International Symposium on Semiconductor Light Emitting Devices (ISSLED2010).
  • Place of Presentation: Peking University, Beijing, China, L-3.
  • Year and Date: 2010-05-17
• [Presentation] Surface recombination of hexagonal GaN crystals (2010)
  • Author(s): N. Sakai, T. Onuma, T. Okuhata, A. A. Yamaguchi and T. Honda
  • Organizer: The International Workshop on Nitride semiconductors(IWN2010)
  • Place of Presentation: Tampa Bay, Florida, USA
• [Presentation] GaN growth on pseudo Al substrates by molecular beam epitaxy at low temperatures (2010)
  • Author(s): T. Goto, M. Hayashi, T. Igaki, S. Taguchi and T. Honda
  • Organizer: 16th International Conference on molecular beam epitaxy(ICMBE2010)
  • Place of Presentation: Belrin, Germany
• [Presentation] XPS study on(0001) and (000-1) GaN layers on sapphire substrates grown by molecular beam epitaxy (2010)
  • Author(s): T. Honda, K. Noguchi, N. Sakai, S. Taguchi, T. Goto, T. Igaki and M. Hayashi
  • Organizer: The 3rd International Symposium on Growth of III-Nitrides
  • Place of Presentation: Montpellier Convention Center, Montpellier, France
• [Presentation] Surface Modification of(0001) GaN and its application to RGB pixels based on UV Schottky-type LEDs (2010)
  • Author(s): T. Honda, N. Sakai and T. Nozaki
  • Organizer: 8th International Symposium on Semiconductor Light Emitting Devices(ISSLED2010)
  • Place of Presentation: Peking University, Beijing, China
• [Presentation] Fabrication of c-axis oriented MgZnO transparent electrode by molecular precursor method (2010)
  • Author(s): T. Oda, H. Hara, C. Mochizuki, M. Sato and T. Honda
  • Organizer: 8th International Symposium on Semiconductor Light Emitting Devices(ISSLED2010)
  • Place of Presentation: Peking University, Beijing, China
• [Presentation] Polarity control of(0001) GaN epitaxial layers grown by RF-MBE (2010)
  • Author(s): T. Igaki, M. Hayashi, T. Goto, S. Taguchi and T. Honda
  • Organizer: The 37th International Symposium on Compound Semiconductors(ISCS2010)
  • Place of Presentation: Takamatsu Symbol Tower, Kagawa, Japan
• [Presentation] Surface analysis of Ga-and N-polar GaN by angle resolved X-ray photoelectron spectroscopy (2010)
  • Author(s): T. Honda, K. Noguchi, Y. Kumagai and A. Koukitu
  • Organizer: The 37th International Conference on Physics and Chemistry of Semiconductor Interfaces(PCSI37)
  • Place of Presentation: New Mexico, USA
• [Presentation] Fabrication of c-axis oriented Ga-doped MgZnO-based UV transparent electrodes by molecular precursor method (2009)
  • Author(s): T.Honda, T.Oda, Y.Mashiyama, H.Hara, M.Sato
  • Organizer: The 36th International Symposium on Compound Semiconductors
  • Place of Presentation: University of California Santa Barbara(CA, USA)
  • Year and Date: 2009-08-31
• [Presentation] XPS Spectra of(0001) and (000-1) GaN Surfaces (2009)
  • Author(s): K. Noguchi, T. Nozaki, N. Sakai, Y. Kumagai, A. Koukitu and T. Honda
  • Organizer: The 8th International Conference on Nitride Semiconductors(ICNS-8)
  • Place of Presentation: Jeju, Korea
• [Book] 電子デバイスの基礎と応用 (2011)
  • Author(s): 長谷川文夫, 本田徹
  • Total Pages: 235
  • Publisher: 産業図書出版
• [Book] 電子デバイスの基礎と応用 (2011)
  • Author(s): 長谷川文夫、本田徹
  • Total Pages: 235
  • Publisher: 産業図書出版