Ultra-high speed opto-electronic devices
| Project/Area Number |
21560365
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electron device/Electronic equipment
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| Research Institution | Tokyo University of Science |
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Principal Investigator |
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| Co-Investigator(Kenkyū-buntansha) |
TAGUCHI Hirohisa 中京大学, 情報理工学部, 准教授 (30453830)
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| Project Period (FY) |
2009 – 2011
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| Project Status |
Completed (Fiscal Year 2011)
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| Budget Amount *help |
¥5,330,000 (Direct Cost: ¥4,100,000、Indirect Cost: ¥1,230,000)
Fiscal Year 2011: ¥650,000 (Direct Cost: ¥500,000、Indirect Cost: ¥150,000)
Fiscal Year 2010: ¥650,000 (Direct Cost: ¥500,000、Indirect Cost: ¥150,000)
Fiscal Year 2009: ¥4,030,000 (Direct Cost: ¥3,100,000、Indirect Cost: ¥930,000)
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| Keywords | 電子デバイス / 集積回路 / 光検出デバイス / III-V化合物半導体 / 超高速応答 / Auger再結合 |
|---|
| Research Abstract |
We have fabricated HEMT's with a strained InGaAs, whose mole fraction is close to that of InAs, as the channel have been fabricated and characterized high-frequency performances using a network analyser. HEMT's with the gate length of 0.1μm exhibited a current cut-off frequency(fT) research ranging over 200 GHz. We have also fabricated MSM-PD's with a strained InGaAs channel and characterized the optical response using a fiber laser with a bandwidth of 400 femt-seconds. MSM-PD's with a L & S of 0.2/0.6μm exhibited a pulse width less than 20 psec. This is because the strained InGaAs has a relatively high drift velocity of electrons. In addition, these MSM-PD's exhibited a responsivity more than one regardless of the channel width as thin as 10 nm. In this way, ultra-high speed OEIC's can be realized by simultaneously fabricating MSM-PD's and HEMT's on the same epitaxial wafer. Therefore, an application of these MSM-PD's to high-speed OEIC's for use in broad-band optical communication systems is expected.
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Report
(4 results)
Research Products
(33 results)
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[Journal Article] Characteristics of a pin-fin structure thermal-to-electric uni-leg device using a commercial n-type Mg2Si source2010
Author(s)
T. Nemoto, T. Iida, J. Sato, Y. Oguni, A. Matsumoto, T. Miyata, T. Sakamoto, T. Nakajima, H. Taguchi, K. Nishio, and Y. Takanashi
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Journal Title
JOURNAL OF ELECTRONIC MATERIALS
Volume: 39
Pages: 1572-1578
Related Report
Peer Reviewed
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[Journal Article] Thermoelectric characteristics of commercialized Mg2Si source doped with Al, Bi, Ag and Cu2010
Author(s)
T. Sakamoto, T. Iida, J. Sato, A. Matsumoto, Y. Honda, T. Nemoto, J. Sato, T. Nakajima, H. Taguchi, and Y. Takanashi
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Journal Title
JOURNAL OF ELECTRONIC MATERIALS
Volume: 39
Pages: 1708-1713
Related Report
Peer Reviewed
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[Journal Article] Direct thermal-to-electric energy conversion material of environmentally-benign Mg2Si synthesized using wasted Si sludge and recycled Mg alloy2010
Author(s)
Y. Honda, T. Iida, T. Sakamoto, S. Sakuragi, Y. Taguchi, Y. Mito, T. Nemoto, T. Nakajima, H. Taguchi, K. Nishio, and Y. Takanashi
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Journal Title
Mater. Res. Soc. Proc.
Volume: Vol.1218
Pages: 1218-1218
Related Report
Peer Reviewed
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