Commercially adaptable technology on shallow junction of silicon by ultra-low energy ion implantation
| Project/Area Number |
21560381
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electron device/Electronic equipment
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| Research Institution | National Institute of Advanced Industrial Science and Technology |
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Principal Investigator |
YAMAMOTO Kazuhiro 独立行政法人産業技術総合研究所, 計測フロンティア研究部門, 主任研究員 (90358292)
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| Project Period (FY) |
2009 – 2011
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| Project Status |
Completed (Fiscal Year 2011)
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| Budget Amount *help |
¥3,900,000 (Direct Cost: ¥3,000,000、Indirect Cost: ¥900,000)
Fiscal Year 2011: ¥650,000 (Direct Cost: ¥500,000、Indirect Cost: ¥150,000)
Fiscal Year 2010: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2009: ¥1,950,000 (Direct Cost: ¥1,500,000、Indirect Cost: ¥450,000)
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| Keywords | イオン注入 / シリコン / ボロン / 超低エネルギー / 極浅接合 / 超低エネルギーイオン |
|---|
| Research Abstract |
The ultra-low energy mass-separated boron ion implantation technique under the ion energy of 500 eV of silicon in the vacuum of 10^<-5> Pa, which is commercially adaptable, was developed in order to form the shallow doping layer. The implantation depth less than 15 nm was achieved by the ion with the energy less than 300 eV.
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Report
(4 results)
Research Products
(5 results)
