| Budget Amount *help |
¥3,900,000 (Direct Cost: ¥3,000,000、Indirect Cost: ¥900,000)
Fiscal Year 2011: ¥650,000 (Direct Cost: ¥500,000、Indirect Cost: ¥150,000)
Fiscal Year 2010: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2009: ¥1,950,000 (Direct Cost: ¥1,500,000、Indirect Cost: ¥450,000)
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| Research Abstract |
The ultra-low energy mass-separated boron ion implantation technique under the ion energy of 500 eV of silicon in the vacuum of 10^<-5> Pa, which is commercially adaptable, was developed in order to form the shallow doping layer. The implantation depth less than 15 nm was achieved by the ion with the energy less than 300 eV.
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