Studies on hetero epitaxial growth of room-temperature ferromagnetic dielectric insulator films and their device application
| Project/Area Number |
21560725
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Structural/Functional materials
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| Research Institution | Osaka Prefecture University |
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Principal Investigator |
MATSUI Toshiyuki 大阪府立大学, 21世紀科学研究機構, 教授 (20219372)
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| Project Period (FY) |
2009 – 2011
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| Project Status |
Completed (Fiscal Year 2011)
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| Budget Amount *help |
¥4,550,000 (Direct Cost: ¥3,500,000、Indirect Cost: ¥1,050,000)
Fiscal Year 2011: ¥910,000 (Direct Cost: ¥700,000、Indirect Cost: ¥210,000)
Fiscal Year 2010: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000)
Fiscal Year 2009: ¥1,950,000 (Direct Cost: ¥1,500,000、Indirect Cost: ¥450,000)
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| Keywords | 磁性誘電体 / 強磁性秩序 / エピタキシャル成長 / 界面修飾層 / ミスフィット制御 / 集束イオンビーム / デバイス構造 / 磁性誘電体薄膜 / 磁気特性 / 誘電特性 / 単結晶薄膜 / バッファー層 |
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| Research Abstract |
Ba(Fe_<0.2> Zr_<0.8>) O_<3-δ>(BFZO) films were synthesized on Si(001) substrates using SrTiO_3(STO) buffer layers by pulsed laser-beam deposition. According to the in-plane high resolution TEM analysis, the STO-buffered BFZO films partially grew epitaxially on the STO buffer layers with orientation relationships, such as(100) BFZO//(100) STO ;[001] BFZO//[001] STO and(110) BFZO//(110) STO ;[001] BFZO//[001] STO. The results of the XPS analysis using soft X-ray radiation indicated that the relative amount of the Fe4+ions fairly increased for the STO-buffered BFZO films rather than for the BFZO films directly deposited on Si substrates. This causes the almost three times larger magnetization of the STO-buffered BFZO films.
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Report
(4 results)
Research Products
(23 results)
