Development of hydrogen gas sensor with Pt/WO_3 thin film and investigation of influence for WO3 structure.
Project/Area Number |
21560726
|
Research Category |
Grant-in-Aid for Scientific Research (C)
|
Allocation Type | Single-year Grants |
Section | 一般 |
Research Field |
Structural/Functional materials
|
Research Institution | Tokyo University of Science |
Principal Investigator |
NISHIO Keishi 東京理科大学, 基礎工学部, 准教授 (90307710)
|
Co-Investigator(Renkei-kenkyūsha) |
GUNJI Takahiro 東京理科大学, 理工学部, 准教授 (20256663)
|
Project Period (FY) |
2009 – 2011
|
Project Status |
Completed (Fiscal Year 2011)
|
Budget Amount *help |
¥4,940,000 (Direct Cost: ¥3,800,000、Indirect Cost: ¥1,140,000)
Fiscal Year 2011: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
Fiscal Year 2010: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
Fiscal Year 2009: ¥2,860,000 (Direct Cost: ¥2,200,000、Indirect Cost: ¥660,000)
|
Keywords | 水素センサー / クロミズム / 光 / 電気 / シナージーセンサー / シナジーセンサー |
Research Abstract |
In this study, Pt-WO_3 thin films were prepared on glass substrates using a sol-gel process. Amorphous and crystalline WO_3 were easily obtained by changing the heat-treatment temperature. The optical absorbance of the film was dependent on the H_2 gas concentration in the range from 0.1 to 5% and the relationship between them was linear. The relationship between the electrical conductivity and hydrogen gas concentration in the range from 100 to 10000ppm was also linear. From these results, Pt-WO_3 thin film prepared by sol-gel process is expected to apply for hydrogen gas sensor.
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Report
(4 results)
Research Products
(23 results)