Improvement of Interfacial Functions in Eco-devices Based on Control of Interfacial Nanostructure
| Project/Area Number |
21560746
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Material processing/treatments
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| Research Institution | Osaka University |
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Principal Investigator |
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| Co-Investigator(Kenkyū-buntansha) |
TAKAHASHI Yasuo 大阪大学, 接合科学研究所, 教授 (80144434)
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| Project Period (FY) |
2009 – 2011
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| Project Status |
Completed (Fiscal Year 2011)
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| Budget Amount *help |
¥4,290,000 (Direct Cost: ¥3,300,000、Indirect Cost: ¥990,000)
Fiscal Year 2011: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2010: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000)
Fiscal Year 2009: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
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| Keywords | 界面機能 / 異材界面構造 / 界面反応制御 / 広禁制帯幅化合物半導体 / 炭化珪素 / 窒化ガリウム / 金属ガラス / 超音波接合 / 熱的安定性評価 / 結晶化メカニズム / 等速昇温変態曲線 / ガラス遷移温度 / 単結晶窒化ガリウム / オーム性電極 / コンタクト通電特性 / 単結晶炭化珪素 / 多段ステップ昇温熱処理 |
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| Research Abstract |
The present study aims to clarify the relation between functions and structures of three dissimilar materials interfaces. The interfacial structure of SiC/ Ti/ Al changes the phase adjacent to SiC from Ti to TiAl_3 and finally to Ti_3SiC_2 by annealing. Electrical properties also change corresponding to the change in the phase adjacent to SiC. Ohmic conduction is achieved by forming Ti_3SiC_2 adjacent to SiC. Development of ohmic properties of GaN/ Ti interface is dominated by nitrogen vacancies in GaN sub-interface produced by the interfacial reaction. Devitrification of Zr_<55> Cu_<30> Ni_5Al_<10> in the vicinity of the interface with Al starts at lower temperature than that of Zr_<55> Cu_<30> Ni_5Al_<10> bulk.
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Report
(4 results)
Research Products
(25 results)
