Improvement of Interfacial Functions in Eco-devices Based on Control of Interfacial Nanostructure

• Project/Area Number: 21560746
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Material processing/treatments
• Research Institution: Osaka University
• Principal Investigator: MAEDA Masakatsu 大阪大学, 接合科学研究所, 助教 (00263327)
• Co-Investigator(Kenkyū-buntansha): TAKAHASHI Yasuo 大阪大学, 接合科学研究所, 教授 (80144434)
• Project Period (FY): 2009 – 2011
• Project Status: Completed (Fiscal Year 2011)
• Budget Amount: ¥4,290,000 (Direct Cost: ¥3,300,000、Indirect Cost: ¥990,000); Fiscal Year 2011: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000); Fiscal Year 2010: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000); Fiscal Year 2009: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
• Keywords: 界面機能 / 異材界面構造 / 界面反応制御 / 広禁制帯幅化合物半導体 / 炭化珪素 / 窒化ガリウム / 金属ガラス / 超音波接合 / 熱的安定性評価 / 結晶化メカニズム / 等速昇温変態曲線 / ガラス遷移温度 / 単結晶窒化ガリウム / オーム性電極 / コンタクト通電特性 / 単結晶炭化珪素 / 多段ステップ昇温熱処理

Research Abstract

The present study aims to clarify the relation between functions and structures of three dissimilar materials interfaces. The interfacial structure of SiC/ Ti/ Al changes the phase adjacent to SiC from Ti to TiAl_3 and finally to Ti_3SiC_2 by annealing. Electrical properties also change corresponding to the change in the phase adjacent to SiC. Ohmic conduction is achieved by forming Ti_3SiC_2 adjacent to SiC. Development of ohmic properties of GaN/ Ti interface is dominated by nitrogen vacancies in GaN sub-interface produced by the interfacial reaction. Devitrification of Zr_<55> Cu_<30> Ni_5Al_<10> in the vicinity of the interface with Al starts at lower temperature than that of Zr_<55> Cu_<30> Ni_5Al_<10> bulk.

Research Products

• [Journal Article] Change in electrical properties by the evolution of interfacial structure between p-type 4H-SiC and Ti/ Al bilayer (2011)
  • Author(s): M. Higuchi, K. Nonomura, M. Maeda, Y. Takahashi
  • Journal Title: Proc. Int. Symp. Materials Science and Innovation for Sustainable Society(ECO-MATES 2011) Volume: Vol.2 Pages: 149-150
  • Peer Reviewed
• [Journal Article] 金属ガラスの接合 (2011)
  • Author(s): 前田将克, 高橋康夫
  • Journal Title: まてりあ Volume: Vol.50 Pages: 439-445
  • NAID: 10029693285
  • Peer Reviewed
• [Journal Article] n型窒化ガリウムとチタンの界面反応制御によるオーミックコンタクト層形成 (2011)
  • Author(s): 前田将克, 松本倫幸, 高橋康夫
  • Journal Title: エレクトロニクスにおけるマイクロ接合・実装技術シンポジウム講演論文集(Mate 2011) Volume: Vol.17 Pages: 201-204
  • Peer Reviewed
• [Journal Article] 金属ガラスの接合 (2011)
  • Author(s): 前田将克,高橋康夫
  • Journal Title: まてりあ Volume: 50 Pages: 439-445
  • NAID: 10029693285
  • Peer Reviewed
• [Journal Article] Effect of interfacial reaction on electrical conduction across the interface between n-type gallium nitride and contact materials (2011)
  • Author(s): M.Maeda, T.Yamasaki, Y.Takahashi
  • Journal Title: Proc.International Symposium on Materials Science and Innovation for Sustainable Society Volume: 1 Pages: 111-112
  • Peer Reviewed
• [Journal Article] Electrical properties and structure of contact interface between Ti3SiC2 and p-type GaN (2011)
  • Author(s): Aiman b.M.H., M.Maeda, Y.Takahashi
  • Journal Title: Proc.International Symposium on Materials Science and Innovation for Sustainable Society Volume: 1 Pages: 113-114
  • Peer Reviewed
• [Journal Article] Change in electrical properties by the evolution of interfacial structure between p-type 4H-SiC and Ti/Al bilayer (2011)
  • Author(s): M.Higuchi, K.Nonomura, M.Maeda, Y.Takahashi
  • Journal Title: Proc.International Symposium on Materials Science and Innovation for Sustainable Society Volume: 2 Pages: 149-150
  • Peer Reviewed
• [Journal Article] Formation of ohmic contact layer on n-type gallium nitride by controlling interfacial reaction with titanium (2010)
  • Author(s): M. Maeda, N. Matsumoto and Y. Takahashi
  • Journal Title: Proc. Materials Science and Technology Pages: 2732-2742
  • Peer Reviewed
• [Journal Article] Thermal stability of Zr_<55> Cu_<30> Ni_5Al_<10> metallic glass in contact with aluminum (2010)
  • Author(s): M. Maeda, Y. Takahashi and A. Inoue
  • Journal Title: Ceram. Trans. Volume: Vol.219 Pages: 67-72
  • Peer Reviewed
• [Journal Article] Thermal stability of Zr_<55>Cu_<30>Ni_<5>Al_<10> metallic glass in contact with aluminum (2010)
  • Author(s): M.Maeda, Y.Takahashi, A.Inoue
  • Journal Title: Ceramic Transactions Volume: 219 Pages: 67-72
  • Peer Reviewed
• [Journal Article] Formation of Ohmic Contact Layer on n-type Gallium Nitride by Controlling Interfacial Reaction with Titanium (2010)
  • Author(s): M.Maeda, N.Matsumoto, Y.Takahashi
  • Journal Title: Proc.Mater.Sci.Technol.(MS & T)2010 Pages: 2732-2742
  • Peer Reviewed
• [Journal Article] Interfacial microstructure and thermal stability of Zr_<55> Cu_<30> Ni_5Al_<10> metallic glass joints formed by ultrasonic bonding (2009)
  • Author(s): M. Maeda, T. Yamasaki, Y. Takahashi and A. Inoue
  • Journal Title: Mater. Trans. Volume: Vol.50 Pages: 1263-1268
  • NAID: 10024815498
  • Peer Reviewed
• [Journal Article] Interfacial Microstructure and Thermal Stability of Zr_<55>Cu_<30>Ni_5Al_<10> Metallic Glass Joints Formed by Ultrasonic Bonding (2009)
  • Author(s): M.Maeda, T.Yamasaki, Y.Takahashi, A.Inoue
  • Journal Title: Materials Transactions 50 Pages: 1263-1268
  • NAID: 10024815498
  • Peer Reviewed
• [Journal Article] Control of Interfacial Properties in Power Electronic Devices
  • Author(s): M. Maeda and Y. Takahashi
  • Journal Title: Int. J. Nanotechnol. Volume: (in press)
  • Peer Reviewed
• [Journal Article] Effect of interfacial reaction on electrical conduction across the interface between n-type gallium nitride and contact materials
  • Author(s): M. Maeda, T. Yamasaki and Y. Takahashi
  • Journal Title: J. Phys.: Conf. Ser. Volume: (in press)
  • Peer Reviewed
• [Journal Article] Electrical properties and structure of contact interface between Ti_3SiC_2 and p-type GaN
  • Author(s): Aiman b. M. H., M. Maeda, Y. Takahashi
  • Journal Title: J. Phys.: Conf. Ser. Volume: (in press)
  • Peer Reviewed
• [Presentation] n型窒化ガリウムへのオーミックコンタクト形成とそのメカニズム (2012)
  • Author(s): 前田将克, 高橋康夫
  • Organizer: 溶接学会界面接合研究委員会
  • Place of Presentation: 東京工業大学
  • Year and Date: 2012-05-18
• [Presentation] Control of Interfacial Properties in Power Electronic Devices (2011)
  • Author(s): M.Maeda, Y.Takahashi
  • Organizer: The 4th International Symposium on Functional Materials
  • Place of Presentation: Sendai, Japan(招待講演)
  • Year and Date: 2011-08-03
• [Presentation] ジルコニウム基金属ガラスとアルミニウムの異材界面の構造と安定性 (2010)
  • Author(s): 児玉拓己, 前田将克, 高橋康夫
  • Organizer: 溶接学会
  • Place of Presentation: 日本大学
  • Year and Date: 2010-09-08
• [Presentation] 炭化ケイ素半導体のオーミックコンタクト形成機構と特性評価 (2010)
  • Author(s): 樋口真之, 前田将克, 高橋康夫, 森本純司
  • Organizer: 溶接学会
  • Place of Presentation: 日本大学
  • Year and Date: 2010-09-08
• [Presentation] p型4H-SiC半導体へのオーミックコンタクト形成と特性評価 (2009)
  • Author(s): 木村義孝, 前田将克, 高橋康夫
  • Organizer: 溶接学会
  • Place of Presentation: 徳島大学
  • Year and Date: 2009-09-11
• [Patent(Industrial Property Rights)] 半導体装置、及び、半導体装置の製造方法 (2009)
  • Inventor(s): 杉本雅裕,関章憲,川橋憲,高橋康夫,前田将克
  • Industrial Property Rights Holder: 大阪大学,トヨタ自動車
  • Industrial Property Number: 2009-229381
  • Filing Date: 2009-10-01
• [Patent(Industrial Property Rights)] オーミック電極およびその製造方法 (2009)
  • Inventor(s): 関章憲,杉本雅裕,川橋憲,高橋康夫,前田将克
  • Industrial Property Rights Holder: 大阪大学,トヨタ自動車
  • Industrial Property Number: 2009-182541
  • Filing Date: 2009-08-05
• [Patent(Industrial Property Rights)] オーミック電極およびその製造方法 (2009)
  • Inventor(s): 高橋康夫, 他4名
  • Industrial Property Rights Holder: 大阪大学, 他1名
  • Industrial Property Number: 2009-182541
  • Filing Date: 2009-08-05
• [Patent(Industrial Property Rights)] 半導体装置、及び、半導体装置の製造方法 (2009)
  • Inventor(s): 高橋康夫, 他4名
  • Industrial Property Rights Holder: 大阪大学, 他1名
  • Industrial Property Number: 2009-229381
  • Filing Date: 2009-10-01