• Search Research Projects
  • Search Researchers
  • How to Use
  1. Back to previous page

Investigations of Phase Transition and Ultra-fast Carrier Excitation in Semiconductor by Ultra-short Coherent Light Sources

Research Project

Project/Area Number 21560762
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeSingle-year Grants
Section一般
Research Field Material processing/treatments
Research InstitutionInstitute for Laser Technology

Principal Investigator

FUJITA Masayuki  (財)レーザー技術総合研究所, レーザープロセス研究チーム, 主席研究員 (30260178)

Co-Investigator(Renkei-kenkyūsha) SOMEKAWA Toshihiro  (財)レーザー技術総合研究所, レーザープロセス研究チーム, 研究員 (00508442)
Project Period (FY) 2009 – 2011
Project Status Completed (Fiscal Year 2011)
Budget Amount *help
¥4,550,000 (Direct Cost: ¥3,500,000、Indirect Cost: ¥1,050,000)
Fiscal Year 2011: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2010: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2009: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000)
Keywords結晶・組織制御 / レーザー加工
Research Abstract

Femtosecond laser irradiation near ablation threshold generates periodic structures, which give us clues to understand interactions between materials and coherent light. In these studies, SiC and Al-Si alloy are used as samples. We investigated changes of periodic surface structure, which were influenced by the phase transition of semiconductors and changes of the ablation thresholds and effective optical penetration depths accompanied with carrier excitation.

Report

(4 results)
  • 2011 Annual Research Report   Final Research Report ( PDF )
  • 2010 Annual Research Report
  • 2009 Annual Research Report
  • Research Products

    (9 results)

All 2012 2011 2010 Other

All Journal Article (1 results) (of which Peer Reviewed: 1 results) Presentation (4 results) Remarks (4 results)

  • [Journal Article] フェムト秒レーザーが切り開く新しい微細加工技術2012

    • Author(s)
      藤田雅之
    • Journal Title

      応用物理

      Volume: 81巻 Pages: 380-385

    • NAID

      10030594594

    • Related Report
      2011 Annual Research Report 2011 Final Research Report
    • Peer Reviewed
  • [Presentation] レーザープロセシングの現状とこれから2011

    • Author(s)
      藤田雅之
    • Organizer
      日本光学会年次学術講演会(招待講演)
    • Place of Presentation
      大阪大学コンベンションセンター
    • Year and Date
      2011-11-29
    • Related Report
      2011 Final Research Report
  • [Presentation] レーザープロセシングの現状とこれから2011

    • Author(s)
      藤田雅之
    • Organizer
      日本光学会年次学術講演会
    • Place of Presentation
      大阪大学コンベンションセンター(招待講演)
    • Year and Date
      2011-11-29
    • Related Report
      2011 Annual Research Report
  • [Presentation] 複合・多層材料のレーザー加工2010

    • Author(s)
      藤田雅之
    • Organizer
      第74回レーザ加工学会
    • Place of Presentation
      東京大学生産技術研究所
    • Year and Date
      2010-12-07
    • Related Report
      2011 Final Research Report 2010 Annual Research Report
  • [Presentation] 4H-SiCのフェムト秒ダブルパルスレーザーによる周期構造形成2010

    • Author(s)
      染川智弘、濱村隆司、藤田雅之, 他
    • Organizer
      第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学
    • Year and Date
      2010-09-15
    • Related Report
      2011 Final Research Report 2010 Annual Research Report
  • [Remarks]

    • URL

      http://ilt.or.jp/

    • Related Report
      2011 Final Research Report
  • [Remarks]

    • URL

      http://www.ilt.or.jp/

    • Related Report
      2011 Annual Research Report
  • [Remarks]

    • URL

      http://www.ilt.or.jp/

    • Related Report
      2010 Annual Research Report
  • [Remarks]

    • URL

      http://www.ilt.or.jp/

    • Related Report
      2009 Annual Research Report

URL: 

Published: 2009-04-01   Modified: 2016-04-21  

Information User Guide FAQ News Terms of Use Attribution of KAKENHI

Powered by NII kakenhi