Investigations of Phase Transition and Ultra-fast Carrier Excitation in Semiconductor by Ultra-short Coherent Light Sources
| Project/Area Number |
21560762
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Material processing/treatments
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| Research Institution | Institute for Laser Technology |
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Principal Investigator |
FUJITA Masayuki (財)レーザー技術総合研究所, レーザープロセス研究チーム, 主席研究員 (30260178)
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| Co-Investigator(Renkei-kenkyūsha) |
SOMEKAWA Toshihiro (財)レーザー技術総合研究所, レーザープロセス研究チーム, 研究員 (00508442)
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| Project Period (FY) |
2009 – 2011
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| Project Status |
Completed (Fiscal Year 2011)
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| Budget Amount *help |
¥4,550,000 (Direct Cost: ¥3,500,000、Indirect Cost: ¥1,050,000)
Fiscal Year 2011: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2010: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2009: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000)
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| Keywords | 結晶・組織制御 / レーザー加工 |
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| Research Abstract |
Femtosecond laser irradiation near ablation threshold generates periodic structures, which give us clues to understand interactions between materials and coherent light. In these studies, SiC and Al-Si alloy are used as samples. We investigated changes of periodic surface structure, which were influenced by the phase transition of semiconductors and changes of the ablation thresholds and effective optical penetration depths accompanied with carrier excitation.
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Report
(4 results)
Research Products
(9 results)
