Development of spin-function on flexible semiconductors

• Project/Area Number: 21656005
• Research Category: Grant-in-Aid for Challenging Exploratory Research
• Allocation Type: Single-year Grants
• Research Field: Applied materials science/Crystal engineering
• Research Institution: Kyushu University
• Principal Investigator: MIYAO Masanobu 九州大学, 大学院・システム情報科学研究院, 特任教授 (60315132)
• Co-Investigator(Kenkyū-buntansha): SADOH Taizoh 九州大学, 大学院・システム情報科学研究院, 准教授 (20274491)
• Project Period (FY): 2009 – 2011
• Project Status: Completed (Fiscal Year 2011)
• Budget Amount: ¥3,410,000 (Direct Cost: ¥3,200,000、Indirect Cost: ¥210,000); Fiscal Year 2011: ¥910,000 (Direct Cost: ¥700,000、Indirect Cost: ¥210,000); Fiscal Year 2010: ¥1,200,000 (Direct Cost: ¥1,200,000); Fiscal Year 2009: ¥1,300,000 (Direct Cost: ¥1,300,000)
• Keywords: フレキシブル / スピントランジスタ / 電子デバイス・機器 / 集積回路 / ディスプレイ / 強磁性体

Research Abstract

To achieve spin-function on flexible semiconductors, a new low-temperature(. 350oC) crystallization technique of SiGe has been developed. Moreover, magnetic and electronic properties of ferromagnetic Heusler alloy/SiGe stacked structures have been clarified.

Research Products

• [Journal Article] "Low temperature(1~ 250oC) layer exchange crystallization of Si1? xGex(x=1? 0) on insulator for advanced flexible devices (2012)
  • Author(s): Jong-Hyeok Park, M. Kurosawa, N. Kawabata, M. Miyao, and T. Sadoh
  • Journal Title: Thin Solid Films Volume: Vol.520 Pages: 3293-3295
  • Peer Reviewed
• [Journal Article] Low temperature (～250℃) layer exchange crystallization of Si_<1-x>Ge_x(x1-0) on insulator for advanced flexible devices (2012)
  • Author(s): J.Park, et al
  • Journal Title: Thin Solid Films Volume: 520 Pages: 3293-3295
  • Peer Reviewed
• [Journal Article] Au-Induced Low-Temperature(~ 250oC) Crystallization of Si on Insulator Through Layer-Exchange Process (2011)
  • Author(s): Jong-Hyeok Park, M. Kurosawa, N. Kawabata, M. Miyao, and T. Sadoh
  • Journal Title: Electrochemical and Solid-State Letters Volume: Vol.14, No.6 Pages: 232-234
  • Peer Reviewed
• [Journal Article] Low-Temperature(~ 250oC) Cu-Induced Lateral Crystallization of Amorphous Ge on Insulator (2011)
  • Author(s): T. Sadoh, M. Kurosawa, T. Hagihara, K. Toko, and M. Miyao
  • Journal Title: Electrochemical and Solid-State Letters Volume: Vol.14, No.7 Pages: 274-276
  • Peer Reviewed
• [Journal Article] Au-Catalyst Induced Low Temperature(~ 250oC) Layer Exchange Crystallization for SiGe On Insulator (2011)
  • Author(s): J.-H. Park, M. Kurosawa, N. Kawabata, M. Miyao, and T. Sadoh
  • Journal Title: ECS Transactions Pages: 39-42
  • Peer Reviewed
• [Journal Article] Low-temperature(. 250oC) crystallization of Si on insulating substrate by gold-induced layer-exchange technique (2010)
  • Author(s): J.-H. Park, M. Kurosawa, N. Kawabata, M. Miyao, and T. Sadoh
  • Journal Title: Proceedings of TENCON 2010-2010 IEEE Region 10 Conference Pages: 2196-2198
  • Peer Reviewed
• [Journal Article] "Highly ordered Co2FeSi Heusler alloys grown on Ge(111) by low-temperature molecular beam epitaxy (2010)
  • Author(s): K. Kasahara, K. Yamamoto, S. Yamada, T. Murakami, K. Hamaya, K. Mibu, and M. Miyao
  • Journal Title: J. Appl. Phys Volume: Vol.107, No.9
  • Peer Reviewed
• [Journal Article] Comparison of Nonlocal and Local Magnetoresistance Signals in Laterally Fabricated Fe3Si/Si Spin-Valve Devices (2010)
  • Author(s): Y. Ando, K. Kasahara, K. Yamane, K. Hamaya, K. Sawano, T. Kimura, and M. Miyao
  • Journal Title: Appl. Phys. Express Volume: Vol.3, No
  • NAID: 210000014783
  • Peer Reviewed
• [Journal Article] High-quality epitaxial CoFe/Si(111) heterostructures fabricated by low-temperature molecular beam epitaxy (2010)
  • Author(s): Y. Maeda, K. Hamaya, S. Yamada, Y. Ando, K. Yamane, and M. Miyao
  • Journal Title: Appl. Phys. Lett Volume: Vol.97, No.19
  • Peer Reviewed
• [Journal Article] Highly ordered Co2FeSi Heusler alloys grown on Ge(111) by low-temperature molecular beam epitaxy (2010)
  • Author(s): K.Kasahara, et al.
  • Journal Title: Journal of Applied Physics Volume: 107
  • Peer Reviewed
• [Journal Article] Comparison of Nonlocal and Local Magnetoresistance Signals in Laterally Fabricated Fe3Si/Si Spin-Valve Devices (2010)
  • Author(s): Y.Ando, et al.
  • Journal Title: Applied Physics Express Volume: 3
  • Peer Reviewed
• [Journal Article] High-quality epitaxial CoFe/Si(111) heterostructures fabricated by low-temperature molecular beam epitaxy (2010)
  • Author(s): Y.Maeda, et al.
  • Journal Title: Applied Physics letters Volume: 97
  • Peer Reviewed
• [Journal Article] Electrical injection and detection of spin-polarized electrons in silicon through an Fe3Si/Si Schottky tunnel barrier (2009)
  • Author(s): Y. Ando, K. Hamaya, K. Kasahara, Y. Kishi, K. Ueda, K. Sawano, T. Sadoh, and M. Miyao
  • Journal Title: Appl. Phys. Lett Volume: Vol.94, No.18
  • Peer Reviewed
• [Journal Article] Ferromagnetism and Electronic Structures of Nonstoichiometric Heusler-Alloy Fe3-xMnxSi Epilayers Grown on Ge(111) (2009)
  • Author(s): K. Hamaya, H. Itoh, O. Nakatsuka, K. Ueda, K. Yamamoto, M. Itakura, T. Taniyama, T. Ono, and M. Miyao
  • Journal Title: Phys. Rev. Lett Volume: Vol.102, No.13
  • Peer Reviewed
• [Journal Article] "Magnetic properties of epitaxially grown Fe3Si/Ge(111) layers with atomically flat heterointerfaces (2009)
  • Author(s): Y. Ando, K. Hamaya, K. Kasahara, K. Ueda, Y. Nozaki, T. Sadoh, Y. Maeda, . K. Matsuyama, and M. Miyao
  • Journal Title: J. Appl. Phys Volume: Vol.105, No.7
  • Peer Reviewed
• [Journal Article] Electrical injection and detection of spin-polarized electrons in silicon through an Fe3Si/Si Schottky tunnel barrier (2009)
  • Author(s): Y.Ando, et al.
  • Journal Title: Applied Physics Letters 94
  • Peer Reviewed
• [Journal Article] Ferromagnetism and Electronic structures of Nonstoichiometric Heusler- Alloy Fe3-xMnxSi Epilayers Grown on Ge(111) (2009)
  • Author(s): K.Hamaya, et al.
  • Journal Title: Physical Review Letters 102
  • Peer Reviewed
• [Journal Article] Magnetic properties of epitaxially grown Fe3Si/Ge(111)layers with atomically flat heterointerfaces (2009)
  • Author(s): Y.Ando, et al.
  • Journal Title: Journal of Applied Physics 105
  • Peer Reviewed
• [Presentation] A u誘起層交換成長法による大粒径G e(1 1 1)結晶/絶縁膜の形成:界面酸化膜挿入効果 (2012)
  • Author(s): 朴鍾.,鈴木恒晴,黒澤昌志,宮尾正信,佐道泰造
  • Organizer: 2012年春季第59回応用物理学関係連合講演会
  • Place of Presentation: 東京
• [Presentation] Low-temperature (～250oC) Crystallization of Poly-SiGe Films by Gold-Induced Layer-Exchange Technique for Flexible Electronics (2011)
  • Author(s): J.Park, et al
  • Organizer: AWAD 2011
  • Place of Presentation: Daejeon, Korea
  • Year and Date: 2011-06-29
• [Presentation] "Lateral-liquid phase epitaxy of(101) Ge-on-insulator from Si template by metal-induced crystallization (2011)
  • Author(s): M. Kurosawa, N. Kawabata, R. Kato, T. Sadoh, and M. Miyao
  • Organizer: 219th ECS Meeting, The Electrochemical Society, Montreal
  • Place of Presentation: Canada
• [Presentation] Au-catalyst Induced Low Temperature(~ 250oC) Layer Exchange Crystallization for SiGe On Insulator (2011)
  • Author(s): J. Park, M. Kurosawa, N. Kawabata, M. Miyao, and T. Sadoh
  • Organizer: 219th ECS Meeting, The Electrochemical Society, Montreal
  • Place of Presentation: Canada
• [Presentation] Low-Temperature Formation of(111) Si1-xGex(0<x<1) on Insulator by Al-Induced Crystallization (2011)
  • Author(s): M. Kurosawa, T. Sadoh, and M. Miyao
  • Organizer: AWAD2011, 2011 Asia Pacific Workshop on Fundametals and Applications of advanced semiconductor devices
  • Place of Presentation: Daejeon, Korea
• [Presentation] Low-temperature(~ 250oC) Crystallization of Poly-SiGe Films by Gold-Induced Layer-Exchange Technique for Flexible Electronics (2011)
  • Author(s): J.-H. Park, M. Kurosawa, N. Kawabata, M. Miyao, T. Sadoh
  • Organizer: AWAD2011, 2011 Asia Pacific Workshop on Fundametals and Applications of advanced semiconductor devices
  • Place of Presentation: Daejeon, Korea
• [Presentation] "Single-crystalline(110)-oriented Ge strips on insulating substrates by SiGe-mixing triggered rapid-melting-growth from artificial Si-micro-seeds (2011)
  • Author(s): M. Kurosawa, N. Kawabata, R. Kato, T. Sadoh and M. Miyao
  • Place of Presentation: Leuven, Belgium
• [Presentation] Low Temperature(~ 250oC) Layer Exchange Crystallization of Si1-xGex(x=1-0) on Insulator for Advanced Flexible Devices (2011)
  • Author(s): Jong-Hyeok Park, M. Kurosawa, N. Kawabata, M. Miyao, and T. Sadoh
  • Place of Presentation: Leuven, Belgium
• [Presentation] 次世代フレキシブルデバイスの為の多結晶Si1-xGex(x=0-1)/絶縁膜の極低温層交換成長(~ 250oC) (2011)
  • Author(s): 朴鍾.,黒澤昌志,川畑直之,宮尾正信,佐道泰造
  • Organizer: 2011年春季第58回応用物理学関係連合講演会
  • Place of Presentation: 川工科大学
• [Presentation] フレキシブルデバイス実現に向けたSi及びGe結晶/絶縁膜の極低温成長(~ 250oC) (2011)
  • Author(s): 佐道泰造,黒澤昌志,川畑直之,朴鍾.,都甲薫,宮尾正信
  • Organizer: 2011年春季第58回応用物理学関係連合講演会
  • Place of Presentation: 神奈川工科大学
• [Presentation] Low-temperature Epitaxial Growth of Ferromagnetic Silicide for SiGe Based Spintransistors (2010)
  • Author(s): M. Miyao, K. Hamaya
  • Place of Presentation: Tokyo
  • Year and Date: 2010-06-30
• [Presentation] Low-temperature Epitaxial Growth of Ferromagnetic Silicide for SiGe Based Spintransistors (2010)
  • Author(s): M.Miyao, et al.
  • Organizer: AWAD2010
  • Place of Presentation: 東京
  • Year and Date: 2010-06-30
• [Presentation] "Low-temperature(. 250oC) crystallization of Si on insulating substrate by gold-induced layer-exchange technique (2010)
  • Author(s): J. Park, M. Kurosawa, N. Kawabata, M. Miyao, and T. Sadoh
  • Place of Presentation: Fukuoka
• [Presentation] Gold-Induced Crystallization of Si at Low-Temperature(. 250oC) for Flexible Electronics (2010)
  • Author(s): J.-H. Park, M. Kurosawa, N. Kawabata, M. Miyao, and T. Sadoh
  • Organizer: Nanotech Malaysia 2010 : Conference on Enabling Science and Nanotechnology
  • Place of Presentation: Kuala Lumpur, Malaysia
• [Presentation] Al誘起層交換法によるSiGe結晶の配向成長機構 (2010)
  • Author(s): 川畑直之,黒澤昌志,朴鍾.,佐道泰造,宮尾正信
  • Organizer: 2010年秋季第71回応用物理学会学術講演会
  • Place of Presentation: 長崎大学
• [Presentation] Au誘起層交換成長法による多結晶Si/絶縁膜の極低温形成(~ 250oC) (2010)
  • Author(s): 朴鍾.,黒澤昌志,川畑直之,宮尾正信,佐道泰造
  • Organizer: 2010年秋季第71回応用物理学会学術講演会
  • Place of Presentation: 長崎大学
• [Presentation] Atomically Controlled Epitaxial Growth of Ferromagnetic Heusler Alloys for SiGe Based Spintronics (2009)
  • Author(s): M. Miyao, K. Hamaya, K. Kasahara, S. Yamada and K. Sawano
  • Place of Presentation: Spain
• [Presentation] Atomically Controlled Epitaxial Growth of Ferromagnetic Heusler Alloys for SiGe Based Spintronics (2009)
  • Author(s): M.Miyao, et al.
  • Organizer: SiNEP-09
  • Place of Presentation: スペイン・ビゴー