| Budget Amount *help |
¥98,540,000 (Direct Cost: ¥75,800,000、Indirect Cost: ¥22,740,000)
Fiscal Year 2013: ¥15,600,000 (Direct Cost: ¥12,000,000、Indirect Cost: ¥3,600,000)
Fiscal Year 2012: ¥14,560,000 (Direct Cost: ¥11,200,000、Indirect Cost: ¥3,360,000)
Fiscal Year 2011: ¥22,880,000 (Direct Cost: ¥17,600,000、Indirect Cost: ¥5,280,000)
Fiscal Year 2010: ¥15,600,000 (Direct Cost: ¥12,000,000、Indirect Cost: ¥3,600,000)
Fiscal Year 2009: ¥29,900,000 (Direct Cost: ¥23,000,000、Indirect Cost: ¥6,900,000)
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| Research Abstract |
Transition metal oxides, having strongly correlated electron systems, show unusually drastic phase transitions(Mott transitions), including ferromagnetism, metal-insulator transition, and others. If it were possible to effectively control their carrier by electric field as semiconductor industry, novel fUnctional electronics could be created, I constmcted Fe oxide based field effect transistor/diode devices and realized electric field modulation of ferromagnetism and magnetoresistance at room temperature. Moreover, I originally developed ultra-small 3D oxide nano-structures, and discovered nano-stmcture enhanced electronic phase change in V-oxides, leading to further development of strongly correlated nano-oxide electronics.
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