Development of a new superconductor on oxide single crystals by an electrostatic carrier doping
Project/Area Number |
21686002
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Research Category |
Grant-in-Aid for Young Scientists (A)
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Allocation Type | Single-year Grants |
Research Field |
Applied materials science/Crystal engineering
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Research Institution | The University of Tokyo (2011) Tohoku University (2009-2010) |
Principal Investigator |
UENO Kazunori 東京大学, 大学院・総合文化研究科, 准教授 (10396509)
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Project Period (FY) |
2009 – 2011
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Project Status |
Completed (Fiscal Year 2011)
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Budget Amount *help |
¥24,700,000 (Direct Cost: ¥19,000,000、Indirect Cost: ¥5,700,000)
Fiscal Year 2011: ¥2,600,000 (Direct Cost: ¥2,000,000、Indirect Cost: ¥600,000)
Fiscal Year 2010: ¥6,110,000 (Direct Cost: ¥4,700,000、Indirect Cost: ¥1,410,000)
Fiscal Year 2009: ¥15,990,000 (Direct Cost: ¥12,300,000、Indirect Cost: ¥3,690,000)
|
Keywords | 超伝導 / 電界効果トランジスタ / 酸化物エレクトロニクス / イオン液体 |
Research Abstract |
KTaO_3 is an oxide semiconductor that has low solid solubility to impurity atoms. Therefore, charge carrier density in KTaO_3 has been limited below 1. 4×10^<14> cm^<-2> by chemical doping. We developed an electric double layer transistor on(100) surface of KTaO_3 single crystal by employing a new device configuration and an ionic liquid, and we induced one order of magnitude higher charge carrier density than that by chemical doping. KTaO_3 showed metallic conduction at low temperature and zero resistance state below 45 mK. This indicates superconductivity in KTaO_3, which is the first example of a new superconductor developed by the electric field-effect method.
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Report
(4 results)
Research Products
(54 results)
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[Journal Article] Tuning of the metal-insulator transition in electrolyte-gated NdNiO_3 thin films2010
Author(s)
S. Asanuma, P. H. Xiang, H. Yamada, H. Sato, I. H. Inoue, H. Akoh, A. Sawa, K. Ueno, H. Shimotani, H. Yuan, M. Kawasaki, Y. Iwasa
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Journal Title
Applied Physics Letters
Volume: 97巻
Related Report
Peer Reviewed
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