| Budget Amount *help |
¥24,700,000 (Direct Cost: ¥19,000,000、Indirect Cost: ¥5,700,000)
Fiscal Year 2011: ¥2,600,000 (Direct Cost: ¥2,000,000、Indirect Cost: ¥600,000)
Fiscal Year 2010: ¥6,110,000 (Direct Cost: ¥4,700,000、Indirect Cost: ¥1,410,000)
Fiscal Year 2009: ¥15,990,000 (Direct Cost: ¥12,300,000、Indirect Cost: ¥3,690,000)
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| Research Abstract |
KTaO_3 is an oxide semiconductor that has low solid solubility to impurity atoms. Therefore, charge carrier density in KTaO_3 has been limited below 1. 4×10^<14> cm^<-2> by chemical doping. We developed an electric double layer transistor on(100) surface of KTaO_3 single crystal by employing a new device configuration and an ionic liquid, and we induced one order of magnitude higher charge carrier density than that by chemical doping. KTaO_3 showed metallic conduction at low temperature and zero resistance state below 45 mK. This indicates superconductivity in KTaO_3, which is the first example of a new superconductor developed by the electric field-effect method.
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