| Budget Amount *help |
¥26,780,000 (Direct Cost: ¥20,600,000、Indirect Cost: ¥6,180,000)
Fiscal Year 2011: ¥2,860,000 (Direct Cost: ¥2,200,000、Indirect Cost: ¥660,000)
Fiscal Year 2010: ¥7,410,000 (Direct Cost: ¥5,700,000、Indirect Cost: ¥1,710,000)
Fiscal Year 2009: ¥16,510,000 (Direct Cost: ¥12,700,000、Indirect Cost: ¥3,810,000)
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| Research Abstract |
Self-organization technique of Ge nanodots epitaxially grown on Si substrates was developed. Using nanodots formed by ultrathin SiO_2 film technique as seed crystals, we developed epitaxial growth technique of films with ultrasmall amount of dislocations on Si substrates, which we call as nanocontact epitaxy. We formed epitaxial growth of Ge and GaSb films on Si substrates. Ge films on Si(001) substrates formed by nanocontact epitaxy, which were as thin as 100 nm, had surface roughness of～0. 4 nm, etch pit density of 10^4-10^5cm^<-2>, namely, high quality. In these Ge epitaxial films, lattice mismatch strain was almost completely relaxed due to the elastically-strain-relaxed nanodots which were seed crystals, despite the ultrasmall amount of dislocations.
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