| Budget Amount *help |
¥22,230,000 (Direct Cost: ¥17,100,000、Indirect Cost: ¥5,130,000)
Fiscal Year 2011: ¥2,730,000 (Direct Cost: ¥2,100,000、Indirect Cost: ¥630,000)
Fiscal Year 2010: ¥7,670,000 (Direct Cost: ¥5,900,000、Indirect Cost: ¥1,770,000)
Fiscal Year 2009: ¥11,830,000 (Direct Cost: ¥9,100,000、Indirect Cost: ¥2,730,000)
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| Research Abstract |
We have successfully developed the surface treatment method for crystalline Si substrate. This developed method can operate near atmospheric pressure and needs no perfluoro carbon gases with high global warming potential as etchant source. By using this developed method, we have achieved a high efficient removal of Si surface damaged layer, which degrades an efficiency of the solar cell device, and a reflectivity suppression of Si surface textured by this method.
Moreover, we have systematically revealed a relationship between etching behavior and etching process condition.
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