Development of eco-friendly surface treatment technique for photovoltaic crystalline Si substrate by using fluorine resigns
Project/Area Number |
21686014
|
Research Category |
Grant-in-Aid for Young Scientists (A)
|
Allocation Type | Single-year Grants |
Research Field |
Production engineering/Processing studies
|
Research Institution | Osaka University |
Principal Investigator |
OHMI Hiromasa 大阪大学, 大学院・工学研究科, 助教 (00335382)
|
Project Period (FY) |
2009 – 2011
|
Project Status |
Completed (Fiscal Year 2011)
|
Budget Amount *help |
¥22,230,000 (Direct Cost: ¥17,100,000、Indirect Cost: ¥5,130,000)
Fiscal Year 2011: ¥2,730,000 (Direct Cost: ¥2,100,000、Indirect Cost: ¥630,000)
Fiscal Year 2010: ¥7,670,000 (Direct Cost: ¥5,900,000、Indirect Cost: ¥1,770,000)
Fiscal Year 2009: ¥11,830,000 (Direct Cost: ¥9,100,000、Indirect Cost: ¥2,730,000)
|
Keywords | 太陽電池 / シリコン / プラズマ / 表面処理 / 大気圧 / エッチング / フッ素樹脂 / VHFプラズマ / 地球温暖化ガス / ドライエッチング / 高圧力 / 準大気圧 / 化学輸送法 / 大気圧プラズマ / PTFE |
Research Abstract |
We have successfully developed the surface treatment method for crystalline Si substrate. This developed method can operate near atmospheric pressure and needs no perfluoro carbon gases with high global warming potential as etchant source. By using this developed method, we have achieved a high efficient removal of Si surface damaged layer, which degrades an efficiency of the solar cell device, and a reflectivity suppression of Si surface textured by this method. Moreover, we have systematically revealed a relationship between etching behavior and etching process condition.
|
Report
(4 results)
Research Products
(14 results)