High-density formation of functionalized nano-interfaces based on semiconductor porous structures for high-sensitive chemical-sensing technology
| Project/Area Number |
21686028
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| Research Category |
Grant-in-Aid for Young Scientists (A)
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| Allocation Type | Single-year Grants |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Hokkaido University |
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Principal Investigator |
SATO Taketomo 北海道大学, 量子集積エレクトロニクス研究センター, 准教授 (50343009)
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| Project Period (FY) |
2009 – 2012
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| Project Status |
Completed (Fiscal Year 2012)
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| Budget Amount *help |
¥25,870,000 (Direct Cost: ¥19,900,000、Indirect Cost: ¥5,970,000)
Fiscal Year 2012: ¥3,900,000 (Direct Cost: ¥3,000,000、Indirect Cost: ¥900,000)
Fiscal Year 2011: ¥4,160,000 (Direct Cost: ¥3,200,000、Indirect Cost: ¥960,000)
Fiscal Year 2010: ¥5,980,000 (Direct Cost: ¥4,600,000、Indirect Cost: ¥1,380,000)
Fiscal Year 2009: ¥11,830,000 (Direct Cost: ¥9,100,000、Indirect Cost: ¥2,730,000)
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| Keywords | 半導体ナノ構造 / 多孔質構造 / 機能修飾 / 化学センサ / 電気化学 |
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| Research Abstract |
We proposed a novel ion-sensitive field-effect transistor (ISFET) having a porous-gate structure and established necessary basic technologies. The straight pores were successfully formed vertically on the substrate by the optimized electrochemical conditions. The functionalization of the pore surface was achieved by the deposition of the metal particles and organic molecules after the complete removal of the irregular top layer form the porous structures. Our proposed ISFETs with porous structures demonstrated good performance with a large current signal in the electrolyte, showing promise for high-sensitive chemical sensors.
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Report
(5 results)
Research Products
(63 results)
