High-density formation of functionalized nano-interfaces based on semiconductor porous structures for high-sensitive chemical-sensing technology

• Project/Area Number: 21686028
• Research Category: Grant-in-Aid for Young Scientists (A)
• Allocation Type: Single-year Grants
• Research Field: Electronic materials/Electric materials
• Research Institution: Hokkaido University
• Principal Investigator: SATO Taketomo 北海道大学, 量子集積エレクトロニクス研究センター, 准教授 (50343009)
• Project Period (FY): 2009 – 2012
• Project Status: Completed (Fiscal Year 2012)
• Budget Amount: ¥25,870,000 (Direct Cost: ¥19,900,000、Indirect Cost: ¥5,970,000); Fiscal Year 2012: ¥3,900,000 (Direct Cost: ¥3,000,000、Indirect Cost: ¥900,000); Fiscal Year 2011: ¥4,160,000 (Direct Cost: ¥3,200,000、Indirect Cost: ¥960,000); Fiscal Year 2010: ¥5,980,000 (Direct Cost: ¥4,600,000、Indirect Cost: ¥1,380,000); Fiscal Year 2009: ¥11,830,000 (Direct Cost: ¥9,100,000、Indirect Cost: ¥2,730,000)
• Keywords: 半導体ナノ構造 / 多孔質構造 / 機能修飾 / 化学センサ / 電気化学

Research Abstract

We proposed a novel ion-sensitive field-effect transistor (ISFET) having a porous-gate structure and established necessary basic technologies. The straight pores were successfully formed vertically on the substrate by the optimized electrochemical conditions. The functionalization of the pore surface was achieved by the deposition of the metal particles and organic molecules after the complete removal of the irregular top layer form the porous structures. Our proposed ISFETs with porous structures demonstrated good performance with a large current signal in the electrolyte, showing promise for high-sensitive chemical sensors.

Research Products

• [Journal Article] Investigation on Optical Absorption Properties of Electrochemically Formed Porous InP using Photoelectric Conversion Devices (2013)
  • Author(s): Y. Kumazaki, T. Kudo, Z. Yatabe and T. Sato
  • Journal Title: Applied Surface Science Volume: 印刷中
  • NAID: 120005322421
  • Peer Reviewed
• [Journal Article] Large photocurrent-response observed at Pt/InP Schottky interface formed on anodic porous structure (2012)
  • Author(s): R. Jinbo, T. Kudo, Z. Yatabe, T. Sato
  • Journal Title: Thin Solid Films Volume: vol. 520 Issue: 17 Pages: 5710-5714
  • DOI: 10.1016/j.tsf.2012.04.031
  • NAID: 120004405512
  • Peer Reviewed
• [Journal Article] Realization of an extremely low reflectance溶液pHとの関係(デバイスDSB)。surface based on InP porous nanostructuresfor application to photoelectrochemical solar cells (2010)
  • Author(s): T. Sato, N. Yoshizawa, T. Hashizume
  • Journal Title: Thin Solid Films Volume: vol. 518 Issue: 15 Pages: 4399-4402
  • DOI: 10.1016/j.tsf.2010.02.029
  • Peer Reviewed
• [Journal Article] Low Reflectance Surface Observed on InP Porous Structures after Photoelectrochemical Etching (2010)
  • Author(s): T. Sato, N. Yoshizawa, H. Okazaki, T.Hashizume
  • Journal Title: ECS Transactions Volume: vol.25,no.42 Issue: 42 Pages: 83-88
  • DOI: 10.1149/1.3416205
  • NAID: 120003783345
  • Peer Reviewed
• [Journal Article] Electrochemical Functionalization of InP Porous Nanostructures with a GOD Membrane for Amperometric Glucose Sensors (2010)
  • Author(s): T. Sato, A. Mizohata, T. Hashizume
  • Journal Title: Journal of The Electrochemical Society Volume: vol. 157 Issue: 2 Pages: H165-H165
  • DOI: 10.1149/1.3264634
  • NAID: 120001788352
  • Peer Reviewed
• [Journal Article] Realization of an extremely low reflectance surface based on InP porous nanostructures for application to photoelectrochemical solar cells (2010)
  • Author(s): T.Sato, N.Yoshizawa, T.Hashizume
  • Journal Title: Thin Solid Films Volume: 518 Pages: 4399-4402
  • NAID: 120002208930
  • Peer Reviewed
• [Journal Article] Low Reflectance Surface Observed on InP Porous Structures after Photoelectrochemical Etching (2010)
  • Author(s): T.Sato, N.Yoshizawa, H.Okazaki, T.Hashizume
  • Journal Title: ECS Transactions Volume: 25 Pages: 83-88
  • NAID: 120003783345
  • Peer Reviewed
• [Journal Article] Electrochemical Functionalization of InP Porous Nanostructures with a GOD Membrane for Amperometric Glucose Sensors (2010)
  • Author(s): T.Sato, A.Mizohata, T.Hashizume
  • Journal Title: Journal of The Electrochemical Society 157
  • NAID: 120001788352
  • Peer Reviewed
• [Journal Article] Realization of an extremely low reflectance surface based on InP porous nanostru ctures for application to photoelectrochemical solar cells (2010)
  • Author(s): T.Sato, N.Yoshizawa, T.Hashizume
  • Journal Title: Thin solid films 未定(掲載決定)
  • Peer Reviewed
• [Journal Article] Fundamental Study of InP-Based Open-Gate Field Effect Transistors for Application to Liquid-Phase Chemical Sensors (2009)
  • Author(s): N. Yoshizawa, T. Sato, T. Hashizume
  • Journal Title: Japanese Journal of Applied Physics Volume: vol. 48 Issue: 9 Pages: 91102-91102
  • DOI: 10.1143/jjap.48.091102
  • NAID: 120001821841
  • Peer Reviewed
• [Journal Article] Fundamental Study of InP-Based Open-Gate Field Effect Transistors for Application to Liquid-Phase Chemical Sensors (2009)
  • Author(s): N.Yoshizawa, T.Sato, T.Hashizume
  • Journal Title: Japanese Journal of Applied Physics 48 Pages: 91102-91102
  • NAID: 120001821841
  • Peer Reviewed
• [Presentation] InP多孔質構造孔壁表面の機能化による光電変換素子への応用 (2013)
  • Author(s): 神保亮平，渡部晃生, 佐藤威友
  • Organizer: 第48回応用物理学会北海道支部/第９回日本光学会北海道地区 合同学術講演会
  • Place of Presentation: 釧路市生涯学習 センター（北海道釧路市）
• [Presentation] 電気化学的手法によるGaN多孔質構造の形成と光学特性の評価 (2013)
  • Author(s): 熊崎祐介，渡部晃生, 谷田部然治, 神保亮平, 佐藤威友
  • Organizer: 平成２５年春期応用物理学会学術講演会
  • Place of Presentation: 神奈川工科大学（神奈川県厚木市）
• [Presentation] 電気化学的手法によるInP多孔質構造の形成と孔の位置制御 (2012)
  • Author(s): 神保亮平, 谷田部然治, 佐藤威友
  • Organizer: 平成24年春期応用物理学会学術講演会
  • Place of Presentation: 早稲田大学(東京都)
  • Year and Date: 2012-03-18
• [Presentation] Photo-electrical response of InP porous structures and their application to photo-electric conversion devices (2012)
  • Author(s): R.Jinbo, T.Kudo, Y.Imai, Z.Yatabe, T.Sato
  • Organizer: 2012 RCIQE International Workshop for Green Electronics
  • Place of Presentation: 北海道大学(札幌市)
  • Year and Date: 2012-03-05
• [Presentation] Characterization and control of dry-etched AlGaN surfaces (2012)
  • Author(s): Z.Yatabe, Y.Hori, T.Sato, T.Hashizume
  • Organizer: 2012 RCIQE International Workshop for Green Electronics
  • Place of Presentation: 北海道大学(札幌市)
  • Year and Date: 2012-03-05
• [Presentation] pn接合基板上に形成したInP多孔質構造の光学特性評価 (2012)
  • Author(s): 工藤智人, 佐藤威友
  • Organizer: 第47回応用物理学会北海道支部/第8回日本光学会北海道地区合同学術講演会
  • Place of Presentation: 北海道大学(札幌市)
  • Year and Date: 2012-01-07
• [Presentation] ポリスチレン微小球の自己組織化配列とリソグラフィ技術を利用した多孔質構造の形成と位置制御 (2012)
  • Author(s): 今井雄大, 神保亮平, 谷田部然治, 佐藤威友
  • Organizer: 第47回応用物理学会北海道支部/第8回日本光学会北海道地区合同学術講演会
  • Place of Presentation: 北海道大学(札幌市)
  • Year and Date: 2012-01-06
• [Presentation] High-sensitive ISFETs Based on Semiconductor Porous Nanostructures (2012)
  • Author(s): T. Sato
  • Organizer: BIT's 3rd Annual World Congress of NanoMedicine-2012
  • Place of Presentation: 深センコンベンションセンター(中国)
• [Presentation] Optical Absorption Properties of InP Porous Structures Formed by Electrochemical Process (2012)
  • Author(s): Y. Kumazaki, T. Kudo, Z. Yatabe, T.Sato
  • Organizer: 2012International Conference on Solid StateDevices and Materials
  • Place of Presentation: 国立京都国際会館(京都府左京区)
• [Presentation] Optical Absorption Properties of InP Porous Structures Formed by Electrochemical Process (2012)
  • Author(s): Y. Kumazaki, T. Kudo, Y. Yatabe and T. Sato
  • Organizer: 2012 International Conference on Solid State Devices and Materials
  • Place of Presentation: 国立京都国際会館（京都市左京区）
• [Presentation] Photoelectric-conversion Devices Based on InP Porous Structure (2012)
  • Author(s): T. Sato, R. Jinbo and Z. Yatabe
  • Organizer: 2012 Pacific Rim Meeting on Electrochemical and Solid-State Science
  • Place of Presentation: ハワイコンベンションセンター（ホノルル、米国）
• [Presentation] High-sensitive ISFETs Based on Semiconductor Porous Nanostructures (2012)
  • Author(s): T. Sato
  • Organizer: BIT’s 3rd Annual World Congress of NanoMedicine-2012
  • Place of Presentation: 深センコンベンションセンター（深セン、中国）
  • Invited
• [Presentation] ポリスチレン微小球の自己組織化配列とリソグラフィ技術を利用した半導体加工基板の作製 (2012)
  • Author(s): 神保亮平，今井雄大、谷田部然治、佐藤威友
  • Organizer: 平成２４年秋期第７３回応用物理学会学術講演会
  • Place of Presentation: 愛媛大学・松山大学（愛媛県松山市）
• [Presentation] pn接合基板上に形成したInP多孔質構造の光学応答特性の評価 (2012)
  • Author(s): 熊崎祐介，工藤智人，谷田部然治, 佐藤威友
  • Organizer: 平成２４年秋期第７３回応用物理学会学術講演会
  • Place of Presentation: 愛媛大学・松山大学（愛媛県松山市）
• [Presentation] Photo-electrical response of InP porous structures formed on pn substrates (2011)
  • Author(s): T.Kudo, T.Sato
  • Organizer: International Symposium on Surface Science
  • Place of Presentation: タワーホール船堀(東京都)
  • Year and Date: 2011-12-14
• [Presentation] Characterization and control of dry-etched GaN surfaces (2011)
  • Author(s): Z.Yatabe, S.Kim, N.Azumaishi, T.Sato, T.Hashizume
  • Organizer: International Spmposium on Surface Science
  • Place of Presentation: タワーホール船堀(東京都)
  • Year and Date: 2011-12-12
• [Presentation] Photoelectric Conversion Devices based on InP Porous Structures (2011)
  • Author(s): R.Jinbo, T.Kudo, T.Sato
  • Organizer: 2011 International Conference on Solid State Devices and Materials
  • Place of Presentation: 愛知県産業労働センター(名古屋市)
  • Year and Date: 2011-09-29
• [Presentation] pn接合基板に形成したInP多孔質構造の光応答特性 (2011)
  • Author(s): 工藤智人, 佐藤威友
  • Organizer: 平成23年秋期第72回応用物理学会学術講演会
  • Place of Presentation: 山形大学(山形市)
  • Year and Date: 2011-08-31
• [Presentation] ポリスチレン微小球の自己組織化配列とリソグラフィ技術を利用した多孔質構造の形成 (2011)
  • Author(s): 今井雄大, 神保亮平, 谷田部然治, 佐藤威友
  • Organizer: 平成23年秋期第72回応用物理学会学術講演会
  • Place of Presentation: 山形大学(山形市)
  • Year and Date: 2011-08-31
• [Presentation] 電気化学的手法を用いたInP多孔質構造の形成と光電変換素子への応用 (2011)
  • Author(s): 神保亮平, 岡崎拓行, 佐藤威友
  • Organizer: 平成23年秋期第72回応用物理学会学術講演会
  • Place of Presentation: 山形大学(山形市)
  • Year and Date: 2011-08-31
• [Presentation] ドライエッチしたGaNおよびAlGaN表面の評価と制御 (2011)
  • Author(s): 谷田部然治, 東石直樹, 佐藤威友, 橋詰保
  • Organizer: 平成23年秋期第72回応用物理学会学術講演会
  • Place of Presentation: 山形大学(山形市)
  • Year and Date: 2011-08-31
• [Presentation] ポリスチレン微小球の自己組織化配列とリソグラフィ技術を利用した半導体パターニング技術 (2011)
  • Author(s): 今井雄大, 岡崎拓行, 佐藤威友
  • Organizer: 平成23年春期応用物理学会学術講演会
  • Place of Presentation: (講演会中止)(発表成立)
  • Year and Date: 2011-03-09
• [Presentation] InP多孔質構造を利用した光電変換素子の検討 (2011)
  • Author(s): 工藤智人, 岡崎拓行, 佐藤威友
  • Organizer: 平成23年春期応用物理学会学術講演会
  • Place of Presentation: (講演会中止)(発表成立)
  • Year and Date: 2011-03-09
• [Presentation] 電気化学的手法によるInPポーラス孔壁表面の機能化と電気的特性の評価 (2011)
  • Author(s): 岡崎拓行, 神保亮平, 佐藤威友
  • Organizer: 化学系学協会北海道支部2011年冬季研究発表会
  • Place of Presentation: 北海道大学(札幌市)
  • Year and Date: 2011-02-02
• [Presentation] pn接合基板上に形成したInP多孔質構造の光応答特性 (2011)
  • Author(s): 工藤智人, 岡崎拓行, 佐藤威友
  • Organizer: 第46回応用物理学会北海道支部/第7回日本光学会北海道地区合同学術講演会
  • Place of Presentation: 室蘭工業大学(室蘭市)
  • Year and Date: 2011-01-08
• [Presentation] ポリスチレン微小球の自己組織化配列を利用した半導体マイクロパターニング技術 (2011)
  • Author(s): 今井雄大, 岡崎拓行, 佐藤威友
  • Organizer: 第46回応用物理学会北海道支部/第7回日本光学会北海道地区合同学術講演会
  • Place of Presentation: 室蘭工業大学(室蘭市)
  • Year and Date: 2011-01-08
• [Presentation] Photo-electrical response of InP porous structures formed on pn substrates (2011)
  • Author(s): T. Kudo, T. Sato
  • Organizer: 2011 International Symposium on Surface Science
  • Place of Presentation: タワーホール船橋(東京都江戸川区)
• [Presentation] High-Sensitive ISFETs based on InP Porous Structures (2010)
  • Author(s): T.Sato, N.Yoshizawa
  • Organizer: The 61st Annual Meeting of the International Society of Electrochemistry (ISE)
  • Place of Presentation: Acropolis Conference Center(フランス)
  • Year and Date: 2010-09-30
• [Presentation] 電気化学的手法によるInP多孔質構造の形成と孔壁表面の機能化 (2010)
  • Author(s): 岡崎拓行, 佐藤威友
  • Organizer: 平成22年秋期応用物理学会学術講演会
  • Place of Presentation: 長崎大学(長崎市)
  • Year and Date: 2010-09-17
• [Presentation] ポリスチレン微小球の自己組織化配列を利用したマイクロパターニングと半導体微細加工への応用 (2010)
  • Author(s): 今井雄大, 岡崎拓行, 佐藤威友
  • Organizer: 平成22年秋期応用物理学会学術講演会
  • Place of Presentation: 長崎大学(長崎市)
  • Year and Date: 2010-09-17
• [Presentation] pn接合基板上に形成したInP多孔質構造の電気的評価 (2010)
  • Author(s): 工藤智人, 岡崎拓行, 佐藤威友
  • Organizer: 平成22年秋期応用物理学会学術講演会
  • Place of Presentation: 長崎大学(長崎市)
  • Year and Date: 2010-09-17
• [Presentation] InP多孔質構造の光吸収特性と光電変換 (2010)
  • Author(s): 佐藤威友, 岡崎拓行
  • Organizer: 平成22年秋期応用物理学会学術講演会
  • Place of Presentation: 長崎大学(長崎市)
  • Year and Date: 2010-09-15
• [Presentation] 多孔質構造を有するイオン感応性電界効果トランジスタ (2010)
  • Author(s): 佐藤威友, 岡崎拓行
  • Organizer: 平成22年秋期応用物理学会学術講演会
  • Place of Presentation: 長崎大学(長崎市)
  • Year and Date: 2010-09-14
• [Presentation] Electrochemical formation of InP porous structures for their application to photoelectric conversion devices (2010)
  • Author(s): H.Okazaki, T.Sato, T.Hashizume
  • Organizer: 2010 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD)
  • Place of Presentation: 東京工業大学(東京都)
  • Year and Date: 2010-06-30
• [Presentation] 電気化学的手法によるInP多孔質構造の形成と高感度化学センサへの応用 (2010)
  • Author(s): 佐藤威友, 吉澤直樹, 岡崎拓行, 橋詰保
  • Organizer: 電子情報通信学会電子デバイス研究会
  • Place of Presentation: 北陸先端科学技術大学院大学(能美市)
  • Year and Date: 2010-06-17
• [Presentation] Optical and Electrical Properties of InP Porous Structures Formed on P-N Substrates (2010)
  • Author(s): H.Okazaki, T.Sato, N.Yoshizawa, T.Hashizume
  • Organizer: 2010 International Conference on Indium Phosphide and Related Materials (IPRM)
  • Place of Presentation: 高松シンボルタワー(高松市)
  • Year and Date: 2010-06-01
• [Presentation] 電気化学的手法を用いて形成したInPポーラス構造の電気的特性 (2010)
  • Author(s): 岡崎拓行, 吉澤直樹, 佐藤威友, 橋詰保
  • Organizer: 平成22年春期応用物理学関係連合講演会
  • Place of Presentation: 東海大学、神奈川県平塚市
  • Year and Date: 2010-03-19
• [Presentation] Optical and Electrical Properties of InP Porous Structures Formed on p-n Substrates (2010)
  • Author(s): T.Sato, A.Mizohata, N.Yoshizawa, T.Hashizume
  • Organizer: 2010 International RCIQE/CREST Joint Workshop
  • Place of Presentation: 北海道大学、札幌市
  • Year and Date: 2010-03-01
• [Presentation] InP-pn接合基板へのポーラス構造作製と形状および位置の制御 (2010)
  • Author(s): 岡崎拓行, 吉澤直樹, 佐藤威友
  • Organizer: 平成22第45回応用物理学会北海道支部/第6回日本光学会北海道支部合同学術講演
  • Place of Presentation: 北海道大学、札幌市
  • Year and Date: 2010-01-08
• [Presentation] InP-pn接合基板へのポーラス構造形成および電気的特性評価 (2010)
  • Author(s): 吉澤直樹, 岡崎拓行, 佐藤威友, 橋詰保
  • Organizer: 平成22第45回応用物理学会北海道支部/第6回日本光学会北海道支部合同学術講演
  • Place of Presentation: 北海道大学、札幌市
  • Year and Date: 2010-01-08
• [Presentation] High-Sensitive ISFETs based on InP Porous Structures (2010)
  • Author(s): T. Sato, N. Yoshizawa
  • Organizer: The 61st Annual Meeting of the International Society of Electrochemistry (ISE)
  • Place of Presentation: Acropolisコンベンションセンター(フランス)
• [Presentation] Low Reflectance Surface Observed on InP Porous Structures after Photoelectroche mical Etching (2009)
  • Author(s): 佐藤威友, 吉澤直樹, 岡崎拓行, 橋詰保
  • Organizer: 216th Meeting of the Electrochemical Society
  • Place of Presentation: Austria Center Vienna、ウィーン、オーストリア
  • Year and Date: 2009-10-08
• [Presentation] ポーラス構造を形成したInP-pn接合基板の電気的特性 (2009)
  • Author(s): 吉澤直樹, 岡崎拓行, 佐藤威友, 橋詰保
  • Organizer: 平成21年秋期応用物理学会学術講演会
  • Place of Presentation: 富山大学、富山県富山市
  • Year and Date: 2009-09-10
• [Presentation] InP-pn接合基板へのポーラス構造作製と形状制御 (2009)
  • Author(s): 岡崎拓行, 吉澤直樹, 佐藤威友
  • Organizer: 平成21年秋期応用物理学会学術講演会
  • Place of Presentation: 富山大学、富山県富山市
  • Year and Date: 2009-09-10
• [Presentation] Formation and application of InP porous structures on p-n substrates (2009)
  • Author(s): 佐藤威友, 吉澤直樹, 岡崎拓行, 橋詰保
  • Organizer: 2009 Asia-Pacific Workshop on Fundamentals and Appli cations of Advanced Semiconductor Devices(AWAD)
  • Place of Presentation: Hae-un-dae Grand Hotel、釜山、韓国
  • Year and Date: 2009-06-25
• [Presentation] Low Reflectance Surface Observed on InP Porous Structures after Photoelectrochemical Etching (2009)
  • Author(s): T. Sato, N. Yoshizawa, H. Okazaki and T.Hashizume
  • Organizer: 216th Meeting of the Electrochemical Society (ECS)
  • Place of Presentation: Austria Center Viena(オーストリア)
• [Remarks]
  • URL: http://hydrogen.rciqe.hokudai.ac.jp/~taketomo/ec/index.html
• [Remarks] 北海道大学量子集積エレクトロニクス研究センター・電気化学グループ
  • URL: http://hydrogen.rciqe.hokudai.ac.jp/~taketomo/ec/index.html
• [Remarks]
  • URL: http://hydrogen.rciqe.hokudai.ac.jp/~taketomo/ec/index.html
• [Remarks]
  • URL: http://hydrogen.rciqe.hokudai.ac.jp/~taketomo/ec/index.html
• [Remarks]
  • URL: http://hydrogen.rciqe.hokudai.ac.jp/~taketomo/ec/index.html
• [Patent(Industrial Property Rights)] センサ及びセンサの製造方法 (2010)
  • Inventor(s): 佐藤威友
  • Industrial Property Rights Holder: 国立大学法人北海道大学
  • Industrial Property Number: 2010-094012
  • Filing Date: 2010-04-15