Realization of silicon LEDs with photonic nanocavities and improvement of their efficiencies
Project/Area Number |
21686031
|
Research Category |
Grant-in-Aid for Young Scientists (A)
|
Allocation Type | Single-year Grants |
Research Field |
Electron device/Electronic equipment
|
Research Institution | The University of Tokyo |
Principal Investigator |
|
Project Period (FY) |
2009 – 2011
|
Project Status |
Completed (Fiscal Year 2011)
|
Budget Amount *help |
¥12,220,000 (Direct Cost: ¥9,400,000、Indirect Cost: ¥2,820,000)
Fiscal Year 2011: ¥2,470,000 (Direct Cost: ¥1,900,000、Indirect Cost: ¥570,000)
Fiscal Year 2010: ¥2,600,000 (Direct Cost: ¥2,000,000、Indirect Cost: ¥600,000)
Fiscal Year 2009: ¥7,150,000 (Direct Cost: ¥5,500,000、Indirect Cost: ¥1,650,000)
|
Keywords | ナノ共振器 / 発光ダイオード / フォトニック結晶 / シリコン / ナノビーム構造 |
Research Abstract |
Silicon light emitting diodes (LEDs) with photonic crystal (PhC) and PhC nanocavity were demonstrated for the first time. These LEDs exhibited much stronger electroluminescence (EL) than Si LEDs without PhC patterns. Moreover, direct modulation of the Si nanoacvity LED up to 100 MHz was demonstrated.
|
Report
(4 results)
Research Products
(31 results)